JPS6242378B2 - - Google Patents

Info

Publication number
JPS6242378B2
JPS6242378B2 JP56016471A JP1647181A JPS6242378B2 JP S6242378 B2 JPS6242378 B2 JP S6242378B2 JP 56016471 A JP56016471 A JP 56016471A JP 1647181 A JP1647181 A JP 1647181A JP S6242378 B2 JPS6242378 B2 JP S6242378B2
Authority
JP
Japan
Prior art keywords
field effect
insulating layer
drain
source
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56016471A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56155542A (en
Inventor
Keiji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1647181A priority Critical patent/JPS56155542A/ja
Publication of JPS56155542A publication Critical patent/JPS56155542A/ja
Publication of JPS6242378B2 publication Critical patent/JPS6242378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP1647181A 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof Granted JPS56155542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1647181A JPS56155542A (en) 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1647181A JPS56155542A (en) 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49115881A Division JPS5142479A (en:Method) 1974-10-08 1974-10-08

Publications (2)

Publication Number Publication Date
JPS56155542A JPS56155542A (en) 1981-12-01
JPS6242378B2 true JPS6242378B2 (en:Method) 1987-09-08

Family

ID=11917173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1647181A Granted JPS56155542A (en) 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof

Country Status (1)

Country Link
JP (1) JPS56155542A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760032A (en) * 1987-05-29 1988-07-26 Sgs-Thomson Microelectronics, Inc. Screening of gate oxides on semiconductors
US4860079A (en) * 1987-05-29 1989-08-22 Sgs-Thompson Microelectronics, Inc. Screening of gate oxides on semiconductors

Also Published As

Publication number Publication date
JPS56155542A (en) 1981-12-01

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