JPS6240697B2 - - Google Patents
Info
- Publication number
- JPS6240697B2 JPS6240697B2 JP58203764A JP20376483A JPS6240697B2 JP S6240697 B2 JPS6240697 B2 JP S6240697B2 JP 58203764 A JP58203764 A JP 58203764A JP 20376483 A JP20376483 A JP 20376483A JP S6240697 B2 JPS6240697 B2 JP S6240697B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- contrast
- photoresist layer
- photobleachable
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 24
- 230000008033 biological extinction Effects 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 2
- 239000000463 material Substances 0.000 description 25
- 230000003287 optical effect Effects 0.000 description 17
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 13
- 238000004061 bleaching Methods 0.000 description 13
- 238000002834 transmittance Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 239000000126 substance Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 9
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- -1 poly(hydroxyethyl methacrylate) Polymers 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- XHYQTIDZYNZAKZ-UHFFFAOYSA-N 1-[4-(diethylamino)phenyl]-n-phenylmethanimine oxide Chemical compound C1=CC(N(CC)CC)=CC=C1C=[N+]([O-])C1=CC=CC=C1 XHYQTIDZYNZAKZ-UHFFFAOYSA-N 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 238000004042 decolorization Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000006862 quantum yield reaction Methods 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- SQDFHQJTAWCFIB-UHFFFAOYSA-N n-methylidenehydroxylamine Chemical class ON=C SQDFHQJTAWCFIB-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007363 ring formation reaction Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 125000003107 substituted aryl group Chemical group 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- CKRZKMFTZCFYGB-UHFFFAOYSA-N N-phenylhydroxylamine Chemical compound ONC1=CC=CC=C1 CKRZKMFTZCFYGB-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical group C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- MNFZZNNFORDXSV-UHFFFAOYSA-N 4-(diethylamino)benzaldehyde Chemical compound CCN(CC)C1=CC=C(C=O)C=C1 MNFZZNNFORDXSV-UHFFFAOYSA-N 0.000 description 1
- DQEFEBPAPFSJLV-UHFFFAOYSA-N Cellulose propionate Chemical compound CCC(=O)OCC1OC(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C1OC1C(OC(=O)CC)C(OC(=O)CC)C(OC(=O)CC)C(COC(=O)CC)O1 DQEFEBPAPFSJLV-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000007824 aliphatic compounds Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229920003086 cellulose ether Polymers 0.000 description 1
- 229920006218 cellulose propionate Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RQUUDWRETZBLHA-UHFFFAOYSA-N n-phenylmethanimine oxide Chemical compound [O-][N+](=C)C1=CC=CC=C1 RQUUDWRETZBLHA-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- SJGALSBBFTYSBA-UHFFFAOYSA-N oxaziridine Chemical compound C1NO1 SJGALSBBFTYSBA-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000007699 photoisomerization reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002338 polyhydroxyethylmethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43819482A | 1982-11-01 | 1982-11-01 | |
| US438194 | 1982-11-01 | ||
| US536923 | 1983-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59104642A JPS59104642A (ja) | 1984-06-16 |
| JPS6240697B2 true JPS6240697B2 (fr) | 1987-08-29 |
Family
ID=23739639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58203764A Granted JPS59104642A (ja) | 1982-11-01 | 1983-11-01 | 集積回路の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59104642A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5188924A (en) * | 1984-05-14 | 1993-02-23 | Kabushiki Kaisha Toshiba | Pattern forming method utilizing material with photoresist film underlayer and contrast enhancement overlayer containing photosensitive diazonium salt |
| US4663275A (en) * | 1984-09-04 | 1987-05-05 | General Electric Company | Photolithographic method and combination including barrier layer |
| JPH07107602B2 (ja) * | 1985-04-30 | 1995-11-15 | 株式会社東芝 | パタ−ン形成材料 |
| CA2011927C (fr) * | 1989-06-02 | 1996-12-24 | Alan Lee Sidman | Methode microlithographique de fabrication de masques de resine photosensible epais a parois verticales |
| JP2663815B2 (ja) * | 1992-11-02 | 1997-10-15 | 信越化学工業株式会社 | レジストパターン形成方法 |
| US5902716A (en) * | 1995-09-05 | 1999-05-11 | Nikon Corporation | Exposure method and apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3416922A (en) * | 1963-07-04 | 1968-12-17 | Azoplate Corp | Resinous printing plate compositions containing light-sensitive nitrones |
| GB1186772A (en) * | 1966-07-01 | 1970-04-02 | American Cyanamid Co | Improved Technique of Photographic Dodging and Modified Photographic Film |
| JPS4988466A (fr) * | 1972-11-30 | 1974-08-23 | ||
| US3873313A (en) * | 1973-05-21 | 1975-03-25 | Ibm | Process for forming a resist mask |
| US4005437A (en) * | 1975-04-18 | 1977-01-25 | Rca Corporation | Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil |
-
1983
- 1983-11-01 JP JP58203764A patent/JPS59104642A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3416922A (en) * | 1963-07-04 | 1968-12-17 | Azoplate Corp | Resinous printing plate compositions containing light-sensitive nitrones |
| GB1186772A (en) * | 1966-07-01 | 1970-04-02 | American Cyanamid Co | Improved Technique of Photographic Dodging and Modified Photographic Film |
| JPS4988466A (fr) * | 1972-11-30 | 1974-08-23 | ||
| US3873313A (en) * | 1973-05-21 | 1975-03-25 | Ibm | Process for forming a resist mask |
| US4005437A (en) * | 1975-04-18 | 1977-01-25 | Rca Corporation | Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59104642A (ja) | 1984-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4702996A (en) | Method of enhancing the contrast of images and materials therefor | |
| US5108874A (en) | Composite useful in photolithography | |
| US4677049A (en) | Spin castable photobleachable layer forming compositions | |
| EP0110165B1 (fr) | Procédé pour accroître le contraste des images et matériaux à cet effet | |
| EP0002999B1 (fr) | Procédé de formation d'une couche de masquage sur un substrat pour constituer un masque | |
| JP4482332B2 (ja) | ファーストミニマム底面反射防止膜組成物を使用して像を形成する方法 | |
| KR970004447B1 (ko) | 반사방지막 제조 방법 및 이를 이용한 반도체 장치의 제조 방법 | |
| KR920005771B1 (ko) | 광표백성 필름을 사용하는 사진평판 제조방법 | |
| US4990665A (en) | Diarylnitrones | |
| JPS59142538A (ja) | 感光性組成物 | |
| EP0459655A2 (fr) | Procédé d'exposition de photoréserve avec une source À©mettant dans la bande i | |
| US4859789A (en) | Diarylnitrones | |
| KR940001554B1 (ko) | 사진평판의 스트리핑 방법 | |
| JPS6240697B2 (fr) | ||
| JP2006338002A (ja) | レジストの画像形成方法、上塗り層材料（液浸リソグラフィ汚染ゲッタリング層） | |
| JPH0241741B2 (fr) | ||
| JPS60238829A (ja) | パタ−ン形成方法 | |
| KR100764374B1 (ko) | 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법 | |
| JPH0688962B2 (ja) | ジアリ−ルニトロン類 | |
| CA1299188C (fr) | Diarylnitrones | |
| JPS62500202A (ja) | 非漂白性の光吸収剤を含むポジのフォトレジストを用いる改良されたフォトリソングラフィ方法 | |
| JPH02187765A (ja) | コントラスト増強用の光脱色性層用材料およびそれを用いたパターン形成方法 | |
| JPS61143744A (ja) | パタ−ン形成方法 | |
| JPS61118741A (ja) | フオトレジスト材料 | |
| JPH1172913A (ja) | ネガ型レジストおよびレジストパターン形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |