JPS6239545B2 - - Google Patents

Info

Publication number
JPS6239545B2
JPS6239545B2 JP54022842A JP2284279A JPS6239545B2 JP S6239545 B2 JPS6239545 B2 JP S6239545B2 JP 54022842 A JP54022842 A JP 54022842A JP 2284279 A JP2284279 A JP 2284279A JP S6239545 B2 JPS6239545 B2 JP S6239545B2
Authority
JP
Japan
Prior art keywords
pixel
electrode
time
well
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54022842A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55115378A (en
Inventor
Kunihiro Tanigawa
Kenji Murase
Tadatami Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2284279A priority Critical patent/JPS55115378A/ja
Publication of JPS55115378A publication Critical patent/JPS55115378A/ja
Publication of JPS6239545B2 publication Critical patent/JPS6239545B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/154Charge-injection device [CID] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2284279A 1979-02-27 1979-02-27 Charge injection device Granted JPS55115378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2284279A JPS55115378A (en) 1979-02-27 1979-02-27 Charge injection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2284279A JPS55115378A (en) 1979-02-27 1979-02-27 Charge injection device

Publications (2)

Publication Number Publication Date
JPS55115378A JPS55115378A (en) 1980-09-05
JPS6239545B2 true JPS6239545B2 (enrdf_load_stackoverflow) 1987-08-24

Family

ID=12093954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2284279A Granted JPS55115378A (en) 1979-02-27 1979-02-27 Charge injection device

Country Status (1)

Country Link
JP (1) JPS55115378A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772370A (en) * 1980-10-23 1982-05-06 Canon Inc Photoelectric converter

Also Published As

Publication number Publication date
JPS55115378A (en) 1980-09-05

Similar Documents

Publication Publication Date Title
US4972243A (en) Photoelectric conversion apparatus with shielded cell
US4322753A (en) Smear and/or blooming in a solid state charge transfer image pickup device
US4731665A (en) Image sensing apparatus with read-out of selected combinations of lines
US4912560A (en) Solid state image sensing device
US4571624A (en) Two-dimensional solid-state image sensor device
US3826926A (en) Charge coupled device area imaging array
US4697200A (en) Field storage drive in interline transfer CCD image sensor
JPH0614706B2 (ja) 電気的電荷転送を利用して連続ラインの中の画像を走査する装置
JPH0126193B2 (enrdf_load_stackoverflow)
US4524391A (en) Two-dimensional solid-state image sensor device
JPS60232788A (ja) 固体撮像装置
JPS6386973A (ja) 露光ブロツキング素子をもつ感光ピクセル
US6449014B1 (en) Image sensor having a low impedance reading block between pixel data lines and output line
US4340909A (en) Solid state area imaging apparatus
JPH06164826A (ja) 固体撮像装置とその駆動方法
JPS6239545B2 (enrdf_load_stackoverflow)
JP2741703B2 (ja) 光電変換装置
JP2777162B2 (ja) 固体撮像装置の駆動方法
JPH02181470A (ja) 固体撮像素子
JPS6340389B2 (enrdf_load_stackoverflow)
JP2936742B2 (ja) 固体撮像素子及びその駆動方法
JPH084128B2 (ja) 画像読取装置
JP2818193B2 (ja) Ccd固体撮像装置の駆動方法
JPH04274367A (ja) 固体撮像装置
JPS6038070B2 (ja) 固体撮像装置