JPS6239539B2 - - Google Patents

Info

Publication number
JPS6239539B2
JPS6239539B2 JP3186280A JP3186280A JPS6239539B2 JP S6239539 B2 JPS6239539 B2 JP S6239539B2 JP 3186280 A JP3186280 A JP 3186280A JP 3186280 A JP3186280 A JP 3186280A JP S6239539 B2 JPS6239539 B2 JP S6239539B2
Authority
JP
Japan
Prior art keywords
laser
plate
wavelength
shaped body
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3186280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56129340A (en
Inventor
Ken Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP3186280A priority Critical patent/JPS56129340A/ja
Publication of JPS56129340A publication Critical patent/JPS56129340A/ja
Publication of JPS6239539B2 publication Critical patent/JPS6239539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/009Working by laser beam, e.g. welding, cutting or boring using a non-absorbing, e.g. transparent, reflective or refractive, layer on the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP3186280A 1980-03-13 1980-03-13 Method of dividing platelike material Granted JPS56129340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3186280A JPS56129340A (en) 1980-03-13 1980-03-13 Method of dividing platelike material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3186280A JPS56129340A (en) 1980-03-13 1980-03-13 Method of dividing platelike material

Publications (2)

Publication Number Publication Date
JPS56129340A JPS56129340A (en) 1981-10-09
JPS6239539B2 true JPS6239539B2 (zh) 1987-08-24

Family

ID=12342853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3186280A Granted JPS56129340A (en) 1980-03-13 1980-03-13 Method of dividing platelike material

Country Status (1)

Country Link
JP (1) JPS56129340A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138080U (zh) * 1988-03-15 1989-09-21
JP2008131008A (ja) * 2006-11-24 2008-06-05 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法およびレーザー加工装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857699A (en) * 1987-01-30 1989-08-15 Duley Walter W Means of enhancing laser processing efficiency of metals
JPS6424469A (en) * 1987-07-20 1989-01-26 Sanyo Electric Co Photosensor manufacturing equipment
JPH01266983A (ja) * 1988-04-20 1989-10-24 Hitachi Seiko Ltd プリント基板穴明機
JPH04180649A (ja) * 1990-11-15 1992-06-26 Nec Yamagata Ltd 半導体チップサンプリング装置
JPH0929472A (ja) * 1995-07-14 1997-02-04 Hitachi Ltd 割断方法、割断装置及びチップ材料
JP4592855B2 (ja) * 1999-12-24 2010-12-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE10144008A1 (de) * 2001-09-07 2003-03-27 Siemens Ag Verfahren und Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit Laserstrahlung
WO2006038713A1 (en) * 2004-10-07 2006-04-13 Showa Denko K.K. Production method for semiconductor device
JP2006203251A (ja) * 2004-10-07 2006-08-03 Showa Denko Kk 半導体素子の製造方法
JP4908936B2 (ja) * 2005-06-30 2012-04-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007142277A (ja) * 2005-11-21 2007-06-07 Matsushita Electric Works Ltd 発光素子の製造方法
JP2012199399A (ja) * 2011-03-22 2012-10-18 Panasonic Corp レーザ加工方法及びレーザ加工装置
JP2013058536A (ja) * 2011-09-07 2013-03-28 Disco Abrasive Syst Ltd デバイスウェーハの分割方法
JP5472242B2 (ja) * 2011-09-20 2014-04-16 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP6422693B2 (ja) * 2014-07-16 2018-11-14 株式会社ディスコ レーザー加工装置
TW201603927A (zh) * 2014-07-29 2016-02-01 Youngtek Electronics Corp 雷射切割方法及其裝置
JP7219590B2 (ja) * 2018-10-30 2023-02-08 浜松ホトニクス株式会社 レーザ加工装置
JP7518646B2 (ja) * 2020-03-30 2024-07-18 株式会社カネカ 太陽電池セル、太陽電池モジュール及び太陽電池セル製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138080U (zh) * 1988-03-15 1989-09-21
JP2008131008A (ja) * 2006-11-24 2008-06-05 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法およびレーザー加工装置

Also Published As

Publication number Publication date
JPS56129340A (en) 1981-10-09

Similar Documents

Publication Publication Date Title
JPS6239539B2 (zh)
KR101975607B1 (ko) 레이저 가공 장치
US7364986B2 (en) Laser beam processing method and laser beam machine
US8093530B2 (en) Laser cutting apparatus and laser cutting method
TW201735143A (zh) SiC晶圓的生成方法
JP3670267B2 (ja) レーザ加工方法
JP4509573B2 (ja) 半導体基板、半導体チップ、及び半導体デバイスの製造方法
JP5940906B2 (ja) レーザー加工装置
US20060255022A1 (en) Wafer laser processing method and laser beam processing machine
JP2004515365A (ja) 半導体材料のレーザー加工
WO2002022301A1 (fr) Procede et dispositif d'usinage par rayonnement laser
CN102785028A (zh) 激光加工方法以及激光加工装置
JP2006108459A (ja) シリコンウエーハのレーザー加工方法およびレーザー加工装置
CN1301178C (zh) 半导体中微结构的紫外线激光烧蚀的图案化
JP2005294325A (ja) 基板製造方法及び基板製造装置
JP4509720B2 (ja) レーザ加工方法
TW201916139A (zh) 晶圓加工方法
CN110977188A (zh) 一种基于空间光调制器的多焦点晶圆内部切割装置
JP2005294656A (ja) 基板製造方法及び基板製造装置
JP2005142303A (ja) シリコンウエーハの分割方法および分割装置
KR20080093321A (ko) 레이저가공 장치
JP2003001458A (ja) レーザ加工方法
JPS62104692A (ja) レ−ザ加工装置
WO2004080642A1 (ja) レーザ加工方法
KR100562423B1 (ko) 웨이퍼 절단용 레이저 시스템 및 이를 이용한 웨이퍼 절단방법