JPS6239517B2 - - Google Patents

Info

Publication number
JPS6239517B2
JPS6239517B2 JP56088990A JP8899081A JPS6239517B2 JP S6239517 B2 JPS6239517 B2 JP S6239517B2 JP 56088990 A JP56088990 A JP 56088990A JP 8899081 A JP8899081 A JP 8899081A JP S6239517 B2 JPS6239517 B2 JP S6239517B2
Authority
JP
Japan
Prior art keywords
power supply
gate
mos transistor
power
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56088990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57203287A (en
Inventor
Michitoku Kamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56088990A priority Critical patent/JPS57203287A/ja
Publication of JPS57203287A publication Critical patent/JPS57203287A/ja
Publication of JPS6239517B2 publication Critical patent/JPS6239517B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
JP56088990A 1981-06-10 1981-06-10 Ratio type gate circuit with power down function Granted JPS57203287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088990A JPS57203287A (en) 1981-06-10 1981-06-10 Ratio type gate circuit with power down function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088990A JPS57203287A (en) 1981-06-10 1981-06-10 Ratio type gate circuit with power down function

Publications (2)

Publication Number Publication Date
JPS57203287A JPS57203287A (en) 1982-12-13
JPS6239517B2 true JPS6239517B2 (enrdf_load_stackoverflow) 1987-08-24

Family

ID=13958239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088990A Granted JPS57203287A (en) 1981-06-10 1981-06-10 Ratio type gate circuit with power down function

Country Status (1)

Country Link
JP (1) JPS57203287A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161622U (enrdf_load_stackoverflow) * 1988-04-28 1989-11-09

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6340897U (enrdf_load_stackoverflow) * 1986-09-03 1988-03-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01161622U (enrdf_load_stackoverflow) * 1988-04-28 1989-11-09

Also Published As

Publication number Publication date
JPS57203287A (en) 1982-12-13

Similar Documents

Publication Publication Date Title
KR940001251B1 (ko) 전압 제어회로
US6977519B2 (en) Digital logic with reduced leakage
JPS61172435A (ja) 半導体集積回路
JPH05108194A (ja) 低消費電力型半導体集積回路
JPS5990292A (ja) 電圧変換回路
US4612461A (en) High speed input buffer having substrate biasing to increase the transistor threshold voltage for level shifting
JPS6113817A (ja) 金属半導体電界効果トランジスタを用いた電気回路
EP0151248A2 (en) High voltage circuit
JPH0642318B2 (ja) 半導体メモリ
US4048518A (en) MOS buffer circuit
US4386286A (en) High current static MOS output buffer circuit for power-down mode of operation
US5592119A (en) Half power supply voltage generating circuit for a semiconductor device
JPS6239517B2 (enrdf_load_stackoverflow)
US4380709A (en) Switched-supply three-state circuit
JPH08221984A (ja) 半導体記憶回路
JPS6218993B2 (enrdf_load_stackoverflow)
US4751682A (en) Sense circuit
JPH09214316A (ja) 出力回路、リーク電流を減少させるための回路、トランジスタを選択的にスイッチするための方法および半導体メモリ
JP3446735B2 (ja) 半導体集積回路及び半導体装置の制御方法
JPH10187270A (ja) 半導体集積回路装置
JP3334141B2 (ja) Ｂｉ−ＣＭＯＳ構造を有する半導体装置
JPH05243937A (ja) 信号出力回路
JPH0720061B2 (ja) 半導体集積回路
JPH10190435A (ja) 半導体出力回路、ｃｍｏｓ出力回路、端子電位検出回路、及び半導体装置
JPS623514B2 (enrdf_load_stackoverflow)