JPS6237900B2 - - Google Patents

Info

Publication number
JPS6237900B2
JPS6237900B2 JP55140159A JP14015980A JPS6237900B2 JP S6237900 B2 JPS6237900 B2 JP S6237900B2 JP 55140159 A JP55140159 A JP 55140159A JP 14015980 A JP14015980 A JP 14015980A JP S6237900 B2 JPS6237900 B2 JP S6237900B2
Authority
JP
Japan
Prior art keywords
semiconductor
inp
layer
region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55140159A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5763884A (en
Inventor
Toshio Murotani
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14015980A priority Critical patent/JPS5763884A/ja
Publication of JPS5763884A publication Critical patent/JPS5763884A/ja
Publication of JPS6237900B2 publication Critical patent/JPS6237900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP14015980A 1980-10-06 1980-10-06 Semiconductor light-emitting device Granted JPS5763884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14015980A JPS5763884A (en) 1980-10-06 1980-10-06 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14015980A JPS5763884A (en) 1980-10-06 1980-10-06 Semiconductor light-emitting device

Publications (2)

Publication Number Publication Date
JPS5763884A JPS5763884A (en) 1982-04-17
JPS6237900B2 true JPS6237900B2 (enrdf_load_stackoverflow) 1987-08-14

Family

ID=15262235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14015980A Granted JPS5763884A (en) 1980-10-06 1980-10-06 Semiconductor light-emitting device

Country Status (1)

Country Link
JP (1) JPS5763884A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Also Published As

Publication number Publication date
JPS5763884A (en) 1982-04-17

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