JPS6237549B2 - - Google Patents
Info
- Publication number
- JPS6237549B2 JPS6237549B2 JP53045684A JP4568478A JPS6237549B2 JP S6237549 B2 JPS6237549 B2 JP S6237549B2 JP 53045684 A JP53045684 A JP 53045684A JP 4568478 A JP4568478 A JP 4568478A JP S6237549 B2 JPS6237549 B2 JP S6237549B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- voltage
- transistor
- threshold voltage
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4568478A JPS54137286A (en) | 1978-04-17 | 1978-04-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4568478A JPS54137286A (en) | 1978-04-17 | 1978-04-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54137286A JPS54137286A (en) | 1979-10-24 |
| JPS6237549B2 true JPS6237549B2 (zh) | 1987-08-13 |
Family
ID=12726212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4568478A Granted JPS54137286A (en) | 1978-04-17 | 1978-04-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54137286A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0087155B1 (en) * | 1982-02-22 | 1991-05-29 | Kabushiki Kaisha Toshiba | Means for preventing the breakdown of an insulation layer in semiconductor devices |
| DE3586268T2 (de) * | 1984-05-03 | 1993-02-25 | Digital Equipment Corp | Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen. |
| JPS61283155A (ja) * | 1985-06-07 | 1986-12-13 | Mitsubishi Electric Corp | 半導体装置の入力保護回路 |
| US5436183A (en) * | 1990-04-17 | 1995-07-25 | National Semiconductor Corporation | Electrostatic discharge protection transistor element fabrication process |
| JP3587537B2 (ja) | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5181579A (zh) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd |
-
1978
- 1978-04-17 JP JP4568478A patent/JPS54137286A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5181579A (zh) * | 1975-01-16 | 1976-07-16 | Hitachi Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54137286A (en) | 1979-10-24 |
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