JPS6235807B2 - - Google Patents
Info
- Publication number
- JPS6235807B2 JPS6235807B2 JP10732878A JP10732878A JPS6235807B2 JP S6235807 B2 JPS6235807 B2 JP S6235807B2 JP 10732878 A JP10732878 A JP 10732878A JP 10732878 A JP10732878 A JP 10732878A JP S6235807 B2 JPS6235807 B2 JP S6235807B2
- Authority
- JP
- Japan
- Prior art keywords
- pump
- reduced pressure
- gas
- reactor
- pumps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007788 liquid Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- 230000001473 noxious effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000002360 explosive Substances 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000002341 toxic gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/002—Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は減圧反応装置、例えば減圧気相成長
（CVD）装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a reduced pressure reactor, such as a reduced pressure vapor deposition (CVD) apparatus.
減圧CVD工程では、爆発性のSiH4等の特殊ガ
スを中心とした化学反応系を使用し、主としてポ
リシリコン膜、Si3N4膜、SiO2膜、DOPOS膜（不
純物をドープしたポリシリコン）等を形成してお
り、この工程は最新の半導体素子を製造する上で
必至のものである。上記のような薄膜を成長させ
る場合には、膜厚分布の改善や品質の向上のため
に、減圧下で反応を行わせることが必要とされ
る。 The low-pressure CVD process uses a chemical reaction system centered on special gases such as explosive SiH 4 to mainly produce polysilicon films, Si 3 N 4 films, SiO 2 films, and DOPOS films (polysilicon doped with impurities). etc., and this process is essential in manufacturing the latest semiconductor devices. When growing a thin film as described above, it is necessary to carry out the reaction under reduced pressure in order to improve the film thickness distribution and quality.
こうした減圧反応装置には、爆発性のある
SiH4等の反応ガスを供給する関係で、特にその
排気系において未反応のSiH4等による爆発危険
性を皆無とし、また有毒ガスが人体に直接的に触
れず、かつ維持（メインテナンス）が容易で、高
い安全性及び公害防止の要求を満たすことが重要
とされる。 These vacuum reactors contain explosive
Since reactive gases such as SiH 4 are supplied, there is no risk of explosion due to unreacted SiH 4 , especially in the exhaust system, and toxic gases do not come into direct contact with the human body, and maintenance is easy. Therefore, it is important to meet high safety and pollution prevention requirements.
従来の減圧反応装置においては、第１図に示す
真空排気装置が使用されている。この装置では、
ヒータ１で加熱される減圧反応炉２内にSiウエハ
等の半導体ウエハ３を多数配置して、反応ガス４
を送り込み、反応生成ガス及び未反応ガスを反応
炉２の後端から排出してメカニカルブースターポ
ンプ５に導びき、更に油回転式ポンプ６によつて
廃ガス７を排出している。ところがこの真空排気
装置は油回転式ポンプ６を使用しているために、
次のような欠点を回避できない。 In a conventional reduced pressure reaction apparatus, a vacuum evacuation apparatus shown in FIG. 1 is used. With this device,
A large number of semiconductor wafers 3 such as Si wafers are placed in a reduced pressure reactor 2 heated by a heater 1, and a reaction gas 4 is
The reaction product gas and unreacted gas are discharged from the rear end of the reactor 2 and guided to the mechanical booster pump 5, and the waste gas 7 is further discharged by the oil rotary pump 6. However, since this vacuum evacuation device uses an oil rotary pump 6,
The following disadvantages cannot be avoided.
(1) 反応炉２からのSiH4等による爆発の危険性
を防止するために、N2ガスをポンプ５に大量
に供給しており、この結果ポンプ性能が低下す
る。(1) In order to prevent the risk of explosion due to SiH 4 etc. from the reactor 2, a large amount of N 2 gas is supplied to the pump 5, resulting in a decrease in pump performance.
(2) 反応性ガスの反応及び蓄積によつてポンプ６
の油が劣化し、装置自体の劣化が著しくなる。(2) Pump 6 due to reaction and accumulation of reactive gases
The oil deteriorates, and the equipment itself deteriorates significantly.
(3) メインテナンス頻度が多く、ポンプのダウン
タイムが長く、ガスによる人体への影響が多大
であつて安全稼動に不安がある。(3) Maintenance is frequent, pump downtime is long, and gas has a great effect on the human body, raising concerns about safe operation.
(4) 未反応のSiH4は危険であるから、必然的に
反応ガス４中のSiH4濃度は実用的にみて10％
以下となつてしまう。(4) Since unreacted SiH 4 is dangerous, the SiH 4 concentration in the reaction gas 4 must be 10% for practical purposes.
It becomes the following.
(5) プラント施設に莫大な設備が必要となる。(5) A huge amount of equipment is required for the plant facility.
(6) 常に爆発危険性と人体への損傷の危険性や不
安とがつきまとう。(6) There is always a risk of explosion and danger of injury to the human body.
本発明は、上述の如き欠陥を是正すべくなされ
たものであつて、減圧反応炉（例えば減圧CVD
反応炉）の排気経路においてエゼクタポンプ（例
えば空気エゼクタポンプ）と液封ポンプ（例えば
水封ポンプ）とが順次接続されており、これら両
ポンプを含む吸引手段（例えばこれら両ポンプと
メカニカルブースターポンプとからなる吸引手
段）によつて前記減圧反応炉内が所定の減圧状態
に制御されつつ前記減圧反応炉からの排ガス（例
えばSiH4を含むガス）が導びかれ、かつ前記両
ポンプの少なくとも一方において前記排ガス中の
危険又は有害物質（例えばSiH4）が安全物質（例
えばSiO2とH2O）に変換され、この安全物質が前
記液封ポンプ内で液体中（例えば水中）に除去さ
れるように構成した減圧反応装置に係るものであ
る。このように構成することによつて、上述した
(1)〜(6)の従来装置の諸欠点を改善することができ
る。 The present invention has been made to correct the above-mentioned deficiencies, and is directed to a reduced pressure reactor (e.g. reduced pressure CVD).
An ejector pump (e.g., an air ejector pump) and a liquid ring pump (e.g., a water ring pump) are connected in sequence in the exhaust path of the reactor (reaction reactor), and a suction means including both these pumps (e.g., both of these pumps and a mechanical booster pump) are connected in sequence. Exhaust gas (e.g., gas containing SiH 4 ) from the reduced pressure reactor is guided while the inside of the reduced pressure reactor is controlled to a predetermined reduced pressure state by a suction means (suction means), and at least one of the pumps Dangerous or harmful substances (e.g. SiH 4 ) in the exhaust gas are converted into safe substances (e.g. SiO 2 and H 2 O), and the safe substances are removed into the liquid (e.g. underwater) in the liquid ring pump. This relates to a reduced pressure reaction apparatus configured as follows. By configuring in this way, the above
Various drawbacks of the conventional devices (1) to (6) can be improved.
次に、本発明を減圧CVD装置に適用した一実
施例を第２図に付き述べる。 Next, an embodiment in which the present invention is applied to a reduced pressure CVD apparatus will be described with reference to FIG.
本実施例においては第１図と同一部分には同一
符号を付して説明を省略するが、反応ガス４とし
て従来公知の如きSiH4，PH3又はB2H6等のガスを
送り込み、反応炉２内を500〜600℃に加熱してウ
エハ３上に気相成長膜を形成する。 In this example, the same parts as those in FIG . The inside of the furnace 2 is heated to 500 to 600° C. to form a vapor phase growth film on the wafer 3.
この場合、まず反応炉２内を所定の真空状態、
例えば10-3トル程度に減圧し、次いでこの反応炉
２内へ反応ガス４を送り込むと共に以下に述べる
装置で所定の圧力に調整して、反応生成ガス及び
未反応ガスを排出する必要がある。このために本
実施例では、反応炉２の排気管８に設けた圧力ゲ
ージ９によつて作業圧を測定しながら、下記の３
つのポンプからなる吸引系を作動させる。 In this case, first, the inside of the reactor 2 is set to a predetermined vacuum state.
For example, it is necessary to reduce the pressure to about 10 -3 torr, then feed the reaction gas 4 into the reactor 2, adjust it to a predetermined pressure using the device described below, and discharge the reaction product gas and unreacted gas. For this purpose, in this embodiment, while measuring the working pressure with a pressure gauge 9 installed in the exhaust pipe 8 of the reactor 2, the following three steps are taken.
Activate the suction system consisting of two pumps.
即ち、排気管８の排気経路中には、２つのメカ
ニカルブースターポンプ１５及び２５と、空気エ
ゼクタポンプ１０と、水封ポンプ１１とが順次設
けられている。これらのポンプの作業圧は全体と
して0.1トル〜10トルの範囲となるように作動さ
せる。作業時においては、ポンプ１５，２５の作
動前に、バルブ１２及び流量調整弁３０を通じて
くるガス１４をバルブ１３により流量調節して、
ポンプ１５の前位とポンプ２５の後位との圧力を
予めほゞ同一にしておき、次いでバルブ１３を閉
じてからポンプ１５，２５を作動させる。 That is, in the exhaust path of the exhaust pipe 8, two mechanical booster pumps 15 and 25, an air ejector pump 10, and a water ring pump 11 are sequentially provided. These pumps are operated at an overall working pressure ranging from 0.1 Torr to 10 Torr. During work, before operating the pumps 15 and 25, the flow rate of the gas 14 coming through the valve 12 and the flow rate adjustment valve 30 is adjusted by the valve 13.
The pressures at the front of the pump 15 and the rear of the pump 25 are made approximately the same in advance, and then the valve 13 is closed before the pumps 15 and 25 are operated.
ポンプ１５，２５はまゆ型カム３１を有する従
来公知のほゞオイルフリーのポンプであつて、排
気容量と到達真空度を実現するために使用され
る。これらのポンプは例えば作業圧0.4〜0.6トル
のときに約4000／minの排気速度を有してい
る。なおポンプ２５はポンプ１５より小型である
が、これによつてポンプが大型化するのを防止し
ている。 The pumps 15, 25 are conventionally known substantially oil-free pumps having a cocoon-shaped cam 31, and are used to realize the exhaust capacity and the ultimate vacuum degree. These pumps have e.g. pumping speeds of about 4000/min at working pressures of 0.4 to 0.6 Torr. Although the pump 25 is smaller than the pump 15, this prevents the pump from becoming larger.
排ガス１４は次いで空気エゼクタポンプ１０に
送り込まれ、ここで空気流１７によつて吸引され
るように構成されている。この吸引は、系が一定
の真空状態（例えば100トル）になつた時点で開
始される。このポンプ１０は従来公知のように真
空到達度を向上させるために使用されるが、本実
施例では次のような反応を同時に起こさせるもの
であることが極めて重要である。即ち、排ガス１
４は吸引された際に、ガス中の成分であるSiH4
は空気と混合されて燃焼を起こし、SiH4＋2O2→
SiO2＋2H2Oなる反応によつて、SiO2とH2Oとに
分解する。従つてこの時点で、爆発性のある
SiH4は安全なSiO2とH2Oとに変化するのであ
る。これらの分解生成物１８及び未反応ガスは次
いで後続の回転羽根３２付きの水封ポンプ１１に
送り込まれる。 The exhaust gas 14 is then fed into an air ejector pump 10 where it is arranged to be sucked in by an air stream 17. This suction begins when the system reaches a constant vacuum (eg, 100 torr). This pump 10 is used to improve the degree of vacuum attainment as is conventionally known, but in this embodiment it is extremely important that the following reactions occur simultaneously. That is, exhaust gas 1
4 is SiH 4 which is a component in the gas when it is inhaled
is mixed with air and causes combustion, SiH 4 +2O 2 →
It decomposes into SiO 2 and H 2 O through the reaction SiO 2 + 2H 2 O. Therefore, at this point, explosive
SiH 4 changes into safe SiO 2 and H 2 O. These decomposition products 18 and unreacted gases are then sent to the subsequent water ring pump 11 with rotating vanes 32 .
水封ポンプ１１は従来公知のように100m3／hr
の処理量の真空ポンプの役割りを果たしつつ、エ
ゼクタ反応物１８や未反応ガス、反応炉２内の反
応物（例えばSiダスト、SiO2粉）を水封を利用し
て安全に処理するものである。このために導管１
６から給水１９を行い、この供給された水中に上
記の反応物を除去しつつポンプ１１内に取り込ま
れる。 The water ring pump 11 has a capacity of 100 m 3 /hr as is conventionally known.
While playing the role of a vacuum pump with a processing capacity of It is. For this purpose conduit 1
Water is supplied from 6 to 19, and the above-mentioned reactants are removed from the supplied water and taken into the pump 11.
水封ポンプ１１からは水相及びガス相２６が
夫々排出されて、後続のタンク２０内に導入され
る。ここでは、上記の反応物を含む水相２１から
排液２９が排出管２２から排出され、またタンク
底部に溜つたSiO2等の生成物２３は底部の排出
管２４から排出される。他方、タンク２０の上部
からは排ガス２７が排出管２８を通じて放出され
る。生成物２３はSiO2やSiからなるので、このま
ま廃棄しても安全上、公害上何ら問題はないと共
に、反応炉２からのガス中のSiH4はエゼクタポ
ンプ１０にて殆んど分解するので、排ガス２７は
爆発性は全くなく、非常に安全なものである。な
お排液２９は適当なフイルタ（図示せず）に通じ
て固形物を除去し、その後に再び導管１９から給
水として再利用することができる。 A water phase and a gas phase 26 are respectively discharged from the water ring pump 11 and introduced into the subsequent tank 20 . Here, a waste liquid 29 from the aqueous phase 21 containing the above reactants is discharged from a discharge pipe 22, and a product 23 such as SiO 2 accumulated at the bottom of the tank is discharged from a discharge pipe 24 at the bottom. On the other hand, exhaust gas 27 is discharged from the upper part of the tank 20 through a discharge pipe 28. Since the product 23 consists of SiO 2 and Si, there is no problem in terms of safety or pollution if it is disposed of as is, and most of the SiH 4 in the gas from the reactor 2 is decomposed by the ejector pump 10. The exhaust gas 27 is completely non-explosive and extremely safe. The waste liquid 29 can be passed through a suitable filter (not shown) to remove solids and then reused as water supply through the conduit 19.
以上説明したことから明らかなように、本実施
例による減圧CVD反応装置は次のような優れた
利点を有している。 As is clear from the above explanation, the reduced pressure CVD reactor according to this example has the following excellent advantages.
(1) SiH4をエゼクタポンプ１０で完全に分解で
きるので、反応ガス４中のSiH4濃度を20％に
まで上げることができ、場合によつて100％の
SiH4を供給することも可能になる。(1) Since SiH 4 can be completely decomposed by the ejector pump 10, the SiH 4 concentration in the reaction gas 4 can be increased up to 20%, and in some cases up to 100%.
It also becomes possible to supply SiH 4 .
(2) 従来装置に比べ、SiH4／He流量を油回転式
ポンプの危険限界（但、ポンプへの希釈用N2
の供給なし）の数10倍〜100倍程度に上げるこ
とが可能であり、作業性を著しく向上させ、応
用範囲を拡大することができる。(2) Compared to conventional equipment, the SiH 4 /He flow rate was lowered to the dangerous limit of an oil rotary pump (however, N 2 for dilution into the pump
It is possible to increase the efficiency by several tens to 100 times compared to the current supply (no supply), significantly improving workability and expanding the range of applications.
(3) メインテナンス時の人体への危険性は皆無に
でき、またメインテナンスの頻度を従来の1/10
０程度に抑えることができる。(3) There is no danger to the human body during maintenance, and the frequency of maintenance has been reduced to 1/10 of the conventional level.
It can be suppressed to about 0.
(4) 排気容量及び到達真空度は従来装置と同等又
はそれ以上となり、ポンプ性能をフルに利用で
きる。(4) The pumping capacity and ultimate vacuum level are equal to or higher than conventional equipment, allowing full use of pump performance.
(5) 爆発性、有毒性ガスに対して単能型スクラツ
パー（即ちポンプ１０，１１）を具備している
ので、作業を極めて安全に行える上に、どのよ
うな処理設備にも利用でき、工場的施設の省力
化を図れる。(5) Equipped with a single-function scrapper (i.e., pumps 10 and 11) for explosive and toxic gases, it is extremely safe to work with, and can be used in any type of processing equipment, making it suitable for use in factories. It can save labor in facilities.
(6) 通常の化学プラントに比べ、配管等を工夫
し、半導体用の装置として小型にまとめること
ができ、スペース利得が大きくなる。(6) Compared to ordinary chemical plants, the piping etc. can be devised and the equipment for semiconductors can be made smaller, resulting in greater space gain.
以上、本発明を一実施例に基いて説明したが、
この実施例は本発明の技術的思想に基いて更に変
形可能である。 The present invention has been described above based on one embodiment, but
This embodiment can be further modified based on the technical idea of the present invention.
例えば、減圧反応炉２内でプラズマCVD（250
〜300℃）やプラズマエツチングした際には、
CnFmで表わされるフツ化炭素が排出されるが、
これは水封ポンプ１１においてH2Oと反応して水
溶性のHFとCO2等に分解し、これらはH2O中に
吸収された状態でタンク２０に導びくことができ
る。従つて有害なCnFmを排出過程で分解して安
定な水溶液にできるから、上述したと同様の効果
を得ることができる。また反応炉にSnCl4及び
H2Oを供給してSnO2（ネサガラス）を形成する
場合には、反応生成物としてHClが排出される
が、これは水封ポンプ１１にてやはり安定なHCl
溶液に変換でき、溶液の形で除去することができ
る。ポンプ１０又は１１内のSiO2は、定期的な
水による洗浄によつて除去し、ポンプ壁部に堆積
するのを防止することができる。エゼクタポンプ
１０には空気以外にも、O2100％を供給してもよ
いし、排ガスの種類によつては他の反応性ガスを
供給することも可能である。エゼクタポンプ１０
に送り込まれる排ガスの反応をコントロールする
ために、エゼクタポンプ１０に供給されるO2に
N2等の不活性ガスを混合することもできる。ま
たポンプ１１には水以外の他の液体を供給してよ
い場合もある。本発明は、Siゲートを有する半導
体装置やCCD等に用いられるポリシリコン膜の
形成装置や、ドライアツシヤー、イオンインプラ
ンター等にも応用し、爆発性及び可燃性及び可燃
性ガスをはじめ腐食性ガスや毒性ガスが排出され
るあらゆる減圧反応装置に適用でき、応用範囲を
応くすることができる。 For example, plasma CVD (250
~300℃) or plasma etching,
Carbon fluoride, represented by CnFm, is emitted,
This reacts with H 2 O in the water ring pump 11 and decomposes into water-soluble HF, CO 2 , etc., and these can be introduced to the tank 20 in a state where they are absorbed in H 2 O. Therefore, harmful CnFm can be decomposed into a stable aqueous solution during the discharge process, and the same effects as described above can be obtained. In addition, SnCl 4 and
When H 2 O is supplied to form SnO 2 (Nesa Glass), HCl is discharged as a reaction product, but this is also converted into stable HCl by the water ring pump 11.
It can be converted into a solution and removed in solution form. SiO 2 in the pump 10 or 11 can be removed by periodic water flushing to prevent it from accumulating on the pump walls. In addition to air, 100% O 2 may be supplied to the ejector pump 10, and other reactive gases may also be supplied depending on the type of exhaust gas. Ejector pump 10
In order to control the reaction of the exhaust gas sent to the ejector pump 10 ,
An inert gas such as N2 can also be mixed. In some cases, the pump 11 may be supplied with a liquid other than water. The present invention can be applied to polysilicon film forming equipment used in semiconductor devices and CCDs with Si gates, as well as dry assher, ion implanter, etc. It can be applied to any decompression reactor where gas or toxic gas is discharged, and can be applied to any range of applications.
本発明は上述の如く、エゼクタポンプ及び液封
ポンプの少なくとも一方において、爆発性ガス等
を安全物質に変換し、これを液封ポンプ中で除去
しているので、安全性に極めて優れたをものを提
供でき、反応ガスの濃度を高めることができる。 As described above, the present invention converts explosive gas, etc. into a safe substance in at least one of the ejector pump and the liquid ring pump, and removes this in the liquid ring pump, so it is extremely safe. can be provided, and the concentration of the reactant gas can be increased.
然も従来のような油回転式のポンプを使用して
いないから、反応ガスの濃度増加と相俟つてポン
プ能力を増大させることができ、作業性の向上が
図れる。 Moreover, since a conventional oil rotary pump is not used, the pumping capacity can be increased in conjunction with the increase in the concentration of the reaction gas, and workability can be improved.
第１図は従来の減圧CVD装置の概略図であ
る。第２図は本発明の一実施例を示すものであつ
て、減圧CVD装置の概略図である。
なお図面に用いられている符号において、２…
…減圧反応炉、３……半導体ウエハ、１０……空
気エゼクタポンプ、１１……水封ポンプ、１５，
２５……メカニカルブースターポンプ、１７……
空気流、１９……給水、２０……タンク、２３…
…生成物、３１……カム、３２……回転羽根、で
ある。
FIG. 1 is a schematic diagram of a conventional reduced pressure CVD apparatus. FIG. 2 shows one embodiment of the present invention, and is a schematic diagram of a reduced pressure CVD apparatus. In addition, in the symbols used in the drawings, 2...
...Reduced pressure reactor, 3...Semiconductor wafer, 10...Air ejector pump, 11...Water ring pump, 15,
25... Mechanical booster pump, 17...
Air flow, 19... Water supply, 20... Tank, 23...
... product, 31 ... cam, 32 ... rotating blade.
Claims (1)
プと液封ポンプとが順次接続されており、少なく
ともこれら両ポンプを含む吸引手段によつて前記
減圧反応炉内が所定の減圧状態に制御されつつ前
記減圧反応炉からの排ガスが導びかれ、かつ前記
両ポンプの少なくとも一方において前記排ガス中
の危険又は有害物質が安全物質に変換され、この
安全物質が前記液封ポンプ内で液体中に除去され
るように構成した減圧反応装置。1. An ejector pump and a liquid ring pump are sequentially connected in the exhaust path of the reduced pressure reactor, and the reduced pressure reaction is performed while the inside of the reduced pressure reactor is controlled to a predetermined reduced pressure state by a suction means including at least both of these pumps. Exhaust gas from the furnace is conducted, and in at least one of the two pumps dangerous or noxious substances in the exhaust gas are converted into safe substances, and this safe substance is removed into the liquid in the liquid ring pump. The constructed vacuum reactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10732878A JPS5534158A (en) | 1978-09-01 | 1978-09-01 | Vacuum reaction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10732878A JPS5534158A (en) | 1978-09-01 | 1978-09-01 | Vacuum reaction apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59047651A Division JPS59197141A (en) | 1984-03-13 | 1984-03-13 | Exhaust treatment method in decompression reaction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5534158A JPS5534158A (en) | 1980-03-10 |
| JPS6235807B2 true JPS6235807B2 (en) | 1987-08-04 |
Family
ID=14456259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10732878A Granted JPS5534158A (en) | 1978-09-01 | 1978-09-01 | Vacuum reaction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5534158A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162326A (en) * | 1981-03-30 | 1982-10-06 | Fujitsu Ltd | Vapor phase growing device |
| JPS58209113A (en) * | 1982-05-31 | 1983-12-06 | Semiconductor Energy Lab Co Ltd | Purification of reactive gas for semiconductor |
| JPS5943519A (en) * | 1982-09-03 | 1984-03-10 | Ulvac Corp | Device for exhaust system in plasmatic cvd device |
| JPS59197141A (en) * | 1984-03-13 | 1984-11-08 | Sony Corp | Exhaust treatment method in decompression reaction device |
| JPH0722124B2 (en) * | 1984-10-17 | 1995-03-08 | 東芝セラミツクス株式会社 | Exhaust gas device for CVD furnace |
| JPH0715131Y2 (en) * | 1989-01-20 | 1995-04-10 | 古河電気工業株式会社 | Metalorganic vapor phase growth equipment |
| JP2952795B2 (en) * | 1991-12-24 | 1999-09-27 | 三菱電機株式会社 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus purging method |
| JP3801286B2 (en) * | 1997-02-03 | 2006-07-26 | 三菱重工業株式会社 | Safety device |
| GB0505852D0 (en) * | 2005-03-22 | 2005-04-27 | Boc Group Plc | Method of treating a gas stream |
| GB0513867D0 (en) * | 2005-07-06 | 2005-08-10 | Boc Group Plc | Method of treating an exhaust gas |
-
1978
- 1978-09-01 JP JP10732878A patent/JPS5534158A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5534158A (en) | 1980-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5584963A (en) | Semiconductor device manufacturing apparatus and cleaning method for the apparatus | |
| EP0500670B1 (en) | Method for halide etching in the presence of water of semi-conductor substrates | |
| EP0732733A1 (en) | HF vapour selective etching method and apparatus | |
| JPS6235807B2 (en) | ||
| CN114797403A (en) | Plasma abatement technique using water vapor and oxygen reagents | |
| JP5172707B2 (en) | Gas flow treatment method | |
| JPS6240428B2 (en) | ||
| US5714011A (en) | Diluted nitrogen trifluoride thermal cleaning process | |
| JPH0260210B2 (en) | ||
| US20110195202A1 (en) | Oxygen pump purge to prevent reactive powder explosion | |
| JPS6311598A (en) | Cylinder for organometal vapor growth | |
| CN102134708A (en) | Filter for filtering fluid in a substrate treatment chamber | |
| JPS6322173B2 (en) | ||
| EP0382986A1 (en) | Method and apparatus for detoxicating halide of nitrogen or carbon | |
| US5328872A (en) | Method of integrated circuit manufacturing using deposited oxide | |
| JP2005085956A (en) | Cleaning method and cvd apparatus | |
| JPH01312833A (en) | Vapor phase growth device | |
| JPH0715131Y2 (en) | Metalorganic vapor phase growth equipment | |
| JPS561527A (en) | Exhaust gas disposal method for semiconductor manufacturing equipment | |
| JPS58132931A (en) | Plasma processing method | |
| KR100217324B1 (en) | A cleaning method of etching chamber | |
| JPH0559987B2 (en) | ||
| JPH01258718A (en) | Method and device for removing reaction dust and viscous material | |
| MY132963A (en) | Apparatus for moving exhaust tube of barrel reactor | |
| JPS6062684A (en) | Water sealing pump |