JPH01258718A - Method and device for removing reaction dust and viscous material - Google Patents
Method and device for removing reaction dust and viscous materialInfo
- Publication number
- JPH01258718A JPH01258718A JP8688888A JP8688888A JPH01258718A JP H01258718 A JPH01258718 A JP H01258718A JP 8688888 A JP8688888 A JP 8688888A JP 8688888 A JP8688888 A JP 8688888A JP H01258718 A JPH01258718 A JP H01258718A
- Authority
- JP
- Japan
- Prior art keywords
- liq
- vacuum pump
- dust
- gas
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 32
- 239000000428 dust Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000011345 viscous material Substances 0.000 title claims abstract description 8
- 239000007788 liquid Substances 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 abstract description 2
- 238000007664 blowing Methods 0.000 abstract 1
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920002545 silicone oil Polymers 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ＣＶＤ法等による成膜過程において発生する
反応粉塵および粘性物質を除去する方法とその装置に関
する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method and an apparatus for removing reaction dust and viscous substances generated during a film forming process by CVD method or the like.
（従来の技術）
ＬＳＩは種々の薄膜を堆積して製造する。この薄膜の堆
積法としてはＣＶＤ法とＰＶＤ法があるが、ＣＶＤ法は
薄膜を構成する元素からなる一種またはそれ以上の化合
物気体を基板表面に送り、基板表面上で化学反応させて
所望の薄膜を形成Ｊる方法である。(Prior Art) LSIs are manufactured by depositing various thin films. There are two methods for depositing this thin film: the CVD method and the PVD method.The CVD method sends one or more compound gases consisting of the elements constituting the thin film to the substrate surface and causes a chemical reaction on the substrate surface to form the desired thin film. This is a method of forming.
ＣＶＤ法は膜形成時にリンやボロンのドーパント添加が
容易であり、不必要な不純物の混入が少ないといった特
徴があり、主として多結晶３ｉ、５ｉ０２、Ｓｉ３Ｎ４
等のＳ；＊薄膜の形成に用いられる重要な技術である。The CVD method is characterized by the fact that it is easy to add dopants such as phosphorus and boron during film formation, and there is little mixing of unnecessary impurities.
etc. S; *This is an important technique used in the formation of thin films.
ＣＶＤ法では熱分解、還元、酸化、加水分解あるいは窒
化等の種々な化学反応が用いられる。The CVD method uses various chemical reactions such as thermal decomposition, reduction, oxidation, hydrolysis, or nitridation.
反応形態が熱分解である１例を挙げると次の通りである
。An example in which the reaction form is thermal decomposition is as follows.
Ｓ ｉ （ＯＣ２Ｈ５）４ →Ｓ ｉ ０２
＋４ Ｃ２ト１４＋２Ｈ２０
この反応によって基板表面に３ｉ０２膜が成膜される。S i (OC2H5)4 →S i 02
+4 C2 t14+2H20 This reaction forms a 3i02 film on the surface of the substrate.
また、Ｐドープの３ｉＱ２であるＰＳＧ膜は反応形態が
酸化である１例であり、反応式は次の通４ＰＨＥ＞ ＋
５０２ →２Ｐ２０５ ＋６１−１２０この反応によっ
てＰが８１０２に取り込まれてＰＳＧ膜が成膜される。In addition, the PSG film, which is P-doped 3iQ2, is an example in which the reaction mode is oxidation, and the reaction formula is as follows: 4PHE> +
502 →2P205 +61-120 Through this reaction, P is taken into 8102 and a PSG film is formed.
また、反応形態が窒化である１例を挙げると次の通りで
ある。。Further, an example in which the reaction form is nitriding is as follows. .
３Ｓ ｉ ）１２ Ｃ１２＋４ＮＨ３−＊Ｓ ｉ３ Ｎ
４ ＋６Ｈ２＋６ＨＣＩ
この反応によって基板表面に５１３Ｎ４膜が成膜される
。3S i )12 C12+4NH3-*S i3 N
4 +6H2+6HCI This reaction forms a 513N4 film on the surface of the substrate.
以上のように、ＣＶＤ法では反応室において種々な反応
が行なわれ成膜されるが、同時に種々な化学秒の反応生
成物が副生される。As described above, in the CVD method, various reactions are carried out in the reaction chamber to form a film, but at the same time various chemical reaction products are produced as by-products.
上記のように、Ｓｉ （○Ｃ２Ｈ３）４の熱分解ではＣ
２Ｈ／ｌやＨ２０が副生すると同時に着膜されない５ｉ
０２も粉塵として発生する。さらに、０２Ｈ４は不飽和
結合を持つため粘性のある重合物になったりする。特に
プラズマＣＶ Ｉ）法においては粘性の高いシロキ丈ン
結合小合物
が生成する。As mentioned above, in the thermal decomposition of Si (○C2H3)4, C
5i that is not deposited at the same time as 2H/l and H20 are produced as by-products.
02 is also generated as dust. Furthermore, since 02H4 has unsaturated bonds, it becomes a viscous polymer. In particular, in the plasma CVI) method, a highly viscous siloquine-bound small compound is produced.
また、ＰＨ３の酸化では１−１２が副生すると同時に着
膜されないＰ２０５も粉塵として発生し、ざらにＰ２０
５は粘性のあるリン酸やリン酸ポリマーになったりする
。In addition, in the oxidation of PH3, 1-12 is produced as a by-product, and at the same time, P205, which is not deposited, is also generated as dust, and the P20
5 becomes viscous phosphoric acid or phosphoric acid polymer.
５ｉｔ−１２ｃＩの窒化ではＨＣＩや１」２が副生する
と同時に着膜されないＳｉ３Ｎ４も粉塵として発生する
。In the nitriding of 5it-12cI, HCI and 1''2 are produced as by-products, and at the same time, Si3N4, which is not deposited, is also generated as dust.
このようにして発生した反応副生物や反応生成物は、減
圧ＣＶＤ法やプラズマＣＶＤ法のように反応室が真空ポ
ンプで減圧される場合は真空ポンプに吸引され、このた
め真空ポンプの寿命が著しく短かくなる。真空回転ポン
プの場合、粘性物質が付着し回転が止まった場合、ポン
プを解体してのクリーン作業は非常に手間と時間を必要
とする、。The reaction by-products and reaction products generated in this way are sucked into the vacuum pump when the reaction chamber is depressurized by a vacuum pump, as in the case of low-pressure CVD or plasma CVD, and this significantly shortens the life of the vacuum pump. It becomes shorter. In the case of vacuum rotary pumps, if viscous substances adhere to the pump and it stops rotating, disassembling the pump and cleaning it is extremely time-consuming and labor-intensive.
また、解体作業の繰り返しはポンプ自体の劣化を早める
。このような事情に５かかわらず、現在まで効果的な方
法がなく殆んどこの対策がとられていなかった。Moreover, repeated disassembly work accelerates the deterioration of the pump itself. Despite these circumstances, until now there has been no effective method and almost no countermeasures have been taken.
（解決しようとする問題点）
本発明は、上記のような反応副生物や反応生成法とそれ
を実施する装置を提供しようとするものである。(Problems to be Solved) The present invention seeks to provide a method for producing reaction by-products and reactions as described above, and an apparatus for carrying out the method.
（問題を解決するための手段） 本発明を第１図にしたがって詳細に説明する。(Means to solve the problem) The present invention will be explained in detail with reference to FIG.
ＣＶＤ装置の反応室に発生した反応粉塵や粘性液滴はガ
スと共に第１図Ａから吸引されて排気管１を通り、密閉
容器にあらかじめ入れである液体５の液面に衝突する。Reaction dust and viscous droplets generated in the reaction chamber of the CVD apparatus are sucked together with gas from FIG.
整流板２は液面に接近して平行に設けられており、反応
粉塵や粘性液滴を含むガスは整流板と液面との衝突を繰
り返しながら、その液体に溶解あるいは分散されたり、
液面に粘着あるいは吸着される。The rectifying plate 2 is provided close to and parallel to the liquid surface, and gas containing reaction dust and viscous droplets repeatedly collides with the rectifying plate and the liquid surface, and is dissolved or dispersed in the liquid.
Adhesive or adsorbed to the liquid surface.
その結果、ガスは清浄にされ排気管４に入り第１図Ｂに
排気され真空ポンプに入る。As a result, the gas is purified and enters the exhaust pipe 4 and is evacuated to FIG. 1B and enters the vacuum pump.
液体５は例えばシリコン系の拡散ポンプオイルのような
蒸気圧の低い液体が適している。As the liquid 5, a liquid with low vapor pressure such as silicone-based diffusion pump oil is suitable.
本発明は、ＣＶＤ法のみならず、各種装置の真空空焼き
時に生成する粘性物質の除去等にも応用できるものであ
る。The present invention can be applied not only to the CVD method but also to the removal of viscous substances generated during vacuum firing of various devices.
（実施例）
プラズマＣＶＤ装置内に３ｉ基板を設置し、その基板を
１００℃に加熱した。(Example) A 3i substrate was placed in a plasma CVD apparatus, and the substrate was heated to 100°C.
一方、３７℃のＳ ｉ （ＯＣ２Ｈ５）４を入れた容器
内にヘリウム９０％、酸素１０％を混合したキｒｔ Ｉ
）ｔ−ガスを流ｆｆ１２００ｃｃ／ｍｉ ｎで流し込み
バブリングしてキャリヤーガスと共にその原料ガスをプ
ラズマＣＶＤ置内に導入した。装置内の圧力は３０Ｔｏ
ｒｒであった。電力２００Ｗ、周波数１３．５６Ｍ１−
１ｚの高周波で基板上にプラズマＣＶＤ膜（Ｓｉ０２膜
）を成膜した。On the other hand, in a container containing Si (OC2H5)4 at 37°C, a mixture of 90% helium and 10% oxygen was used.
) T-gas was poured and bubbled at a flow rate of 1200 cc/min, and the raw material gas was introduced into the plasma CVD apparatus together with the carrier gas. The pressure inside the device is 30To
It was rr. Power 200W, frequency 13.56M1-
A plasma CVD film (Si02 film) was formed on the substrate using a high frequency of 1z.
その排気ガスを、拡散ポンプ用シリコンオイルを入れた
本発明になる除去装置に導入した。The exhaust gas was introduced into a removal device according to the present invention containing silicone oil for a diffusion pump.
その結果、反応生成物であるシロギリ゛ン結合重合物は
シリコンオイルに吸収され、５１０２粉塵。As a result, the reaction product, the shirogyrin-bonded polymer, was absorbed into the silicone oil, resulting in 5102 dust.
はシリコンオイルに懸濁した。was suspended in silicone oil.
水沫による真空回転ポンプの作動寿命は、本発明になる
除去装置を使用しない場合は１日３時間の反応時間で７
日間で回転ポンプの回転が停止したが、本発明になる除
去装置を使用した場合は、１日３時間の反応時間で３０
日間運転して６回転ポンプの異常を認めなかった。The operating life of a vacuum rotary pump due to water droplets is 7 hours with a reaction time of 3 hours a day if the removing device of the present invention is not used.
The rotation of the rotary pump stopped after 1 day, but when using the removal device according to the present invention, the rotation of the rotary pump stopped after 3 hours per day.
No abnormality was found in the 6-rotation pump after operating it for several days.
（発明の効采）
本発明によれば、反応室で発生した反応粉塵および粘性
液滴を真空ポンプに入る前に除去するため、真空ポンプ
の作動寿命を著しく長くすることができる特徴がある。(Effects of the Invention) According to the present invention, since reaction dust and viscous droplets generated in the reaction chamber are removed before entering the vacuum pump, the operating life of the vacuum pump can be significantly extended.
また、真空ポンプから逆排出されたオイルミス１へも本
発明になる除去装置で除去できる特徴がある。Furthermore, the removal device according to the present invention can also remove the oil waste 1 discharged back from the vacuum pump.
さらに、本発明になる除去ｉ置は構造が簡単なため、装
置のクリーニング、整備等が容易である利点がある。Further, since the removal device according to the present invention has a simple structure, there is an advantage that cleaning and maintenance of the device is easy.
第１図は本発明になる装置の断面図である。
図において、１は反応室からの排気管、２は排気管１に
付属した整流板、３は除去装置本体、４は真空ポンプへ
の排気管、５は蒸気圧の低い液体である。
また、Ａは排気ガスの吸入口、Ｂは排気ガスの排出口で
ある。FIG. 1 is a sectional view of the device according to the invention. In the figure, 1 is an exhaust pipe from the reaction chamber, 2 is a rectifier plate attached to the exhaust pipe 1, 3 is the removal device main body, 4 is an exhaust pipe to a vacuum pump, and 5 is a liquid with low vapor pressure. Further, A is an exhaust gas inlet, and B is an exhaust gas outlet.
Claims (2)
、反応室と真空ポンプとの間に設置し、反応室から出て
くる気体を蒸気圧の低い液体表面にあてて、溶解、分散
、粘着あるいは吸着によって当該気体中の粉塵および粘
性物質を除去したのち、真空ポンプに排気することを特
徴とする反応粉塵および粘性物質の除去方法。(1) In a system where the reaction chamber is evacuated using a vacuum pump, the gas coming out of the reaction chamber is placed between the reaction chamber and the vacuum pump and is applied to the surface of the liquid with low vapor pressure to dissolve, disperse, A method for removing reactive dust and viscous substances, which comprises removing dust and viscous substances from the gas by adhesion or adsorption, and then exhausting the gas using a vacuum pump.
に空間をあけて設置した平板を備えた反応室からの排気
管と真空ポンプへの排気管を備えたことを特徴とする反
応粉塵および粘性物質の除去装置。(2) A closed container containing a liquid with a low vapor pressure is equipped with an exhaust pipe from a reaction chamber equipped with a flat plate installed with a space above the liquid and an exhaust pipe to a vacuum pump. Reaction dust and viscous substance removal equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8688888A JPH01258718A (en) | 1988-04-08 | 1988-04-08 | Method and device for removing reaction dust and viscous material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8688888A JPH01258718A (en) | 1988-04-08 | 1988-04-08 | Method and device for removing reaction dust and viscous material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01258718A true JPH01258718A (en) | 1989-10-16 |
Family
ID=13899375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8688888A Pending JPH01258718A (en) | 1988-04-08 | 1988-04-08 | Method and device for removing reaction dust and viscous material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01258718A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059622U (en) * | 1991-07-30 | 1993-02-09 | 京セラ株式会社 | Powder trap |
| US5855651A (en) * | 1994-11-29 | 1999-01-05 | Asahi Denka Kogyo K.K. | Method for processing waste gas exhausted from chemical vapor and deposition equipment |
-
1988
- 1988-04-08 JP JP8688888A patent/JPH01258718A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059622U (en) * | 1991-07-30 | 1993-02-09 | 京セラ株式会社 | Powder trap |
| US5855651A (en) * | 1994-11-29 | 1999-01-05 | Asahi Denka Kogyo K.K. | Method for processing waste gas exhausted from chemical vapor and deposition equipment |
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