JPH08172083A - By-product trap device and cleaning thereof - Google Patents
By-product trap device and cleaning thereofInfo
- Publication number
- JPH08172083A JPH08172083A JP6334165A JP33416594A JPH08172083A JP H08172083 A JPH08172083 A JP H08172083A JP 6334165 A JP6334165 A JP 6334165A JP 33416594 A JP33416594 A JP 33416594A JP H08172083 A JPH08172083 A JP H08172083A
- Authority
- JP
- Japan
- Prior art keywords
- product
- trap
- cleaning
- main body
- trap device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、成膜中の生成物及び
副生成物並びにプロセス装置の洗浄時に生成される副生
成物をプロセス装置から真空ポンプまでの間でトラップ
させ、真空ポンプの目詰まりを防ぐとともに、排気系配
管を外すことなくその洗浄が可能であるような副生成物
トラップ装置及びその洗浄方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention traps the products and by-products during film formation and the by-products produced during cleaning of the process equipment between the process equipment and the vacuum pump, and the vacuum pump has a function of The present invention relates to a by-product trap device that can prevent clogging and can be cleaned without removing an exhaust system pipe, and a cleaning method thereof.
【０００２】[0002]
【従来の技術】半導体製造プロセスにおいて真空中で行
われるプロセスの一つにＣＶＤによる成膜があり、その
代表的な例の一つはＳｉ3 Ｎ4 膜の成膜である。この反
応の一例の化学式は式（１）で表すことができる。 ３ＳｉＨ2Ｃｌ2＋１０ＮＨ3→Ｓｉ3Ｈ4＋６Ｈ2＋６ＮＨ4Ｃｌ （１） この時に、目的とするＳｉ3 Ｎ4 膜の他に副生成物とし
てＮＨ4Ｃｌが生成する。2. Description of the Related Art Film formation by CVD is one of the processes performed in a vacuum in a semiconductor manufacturing process, and a typical example thereof is the film formation of a Si 3 N 4 film. The chemical formula of an example of this reaction can be represented by Formula (1). 3SiH 2 Cl 2 + 10NH 3 → Si 3 H 4 + 6H 2 + 6NH 4 Cl (1) At this time, NH 4 Cl is produced as a by-product in addition to the desired Si 3 N 4 film.
【０００３】この副生成物は常圧においては３４０℃で
昇華する。しかし、それ以下の温度域においては固体と
なり、反応容器（成膜は７００〜９００℃の空間でなさ
れるので、当然ながら反応容器の温度はＮＨ4 Ｃｌの昇
華点よりも高いと考えられる）よりも温度の低い真空排
気系の配管の内壁や真空ポンプのロータ部に多く付着
し、真空排気特性の低下や真空ポンプの停止につなが
る。This by-product sublimes at 340 ° C. under normal pressure. However, in the temperature range lower than that, it becomes solid, and the temperature is higher than that of the reaction vessel (since film formation is performed in a space of 700 to 900 ° C., the temperature of the reaction vessel is naturally higher than the sublimation point of NH 4 Cl). Also adheres much to the inner wall of the pipe of the low temperature vacuum exhaust system and the rotor part of the vacuum pump, leading to deterioration of the vacuum exhaust characteristic and stop of the vacuum pump.
【０００４】成膜の目的とする生成物であるＳｉ3 Ｎ4
も反応容器内壁や真空排気系配管、真空ポンプロータ部
に付着するが、その量はＮＨ4 Ｃｌと比較して少なく、
排気系配管や真空ポンプの目詰まりはＮＨ4 Ｃｌによる
場合が圧倒的に多い。Si 3 N 4 which is the desired product for film formation
Also adheres to the inner wall of the reaction vessel, the vacuum exhaust system piping, and the vacuum pump rotor part, but the amount is smaller than NH 4 Cl,
Overwhelmingly most of the clogging of the exhaust system piping and vacuum pump is due to NH 4 Cl.
【０００５】反応容器内壁に蓄積した生成物であるＳｉ
3 Ｎ4 は、成膜回数を増すに従ってその厚みを増し、内
壁から剥離して成膜中のウエハの上に落下し、汚染の原
因となる。このため、プラズマＣＶＤなどにおいては何
回かの成膜回数ごとにＮＦ3ガスを用いてクリーニング
を行い、壁に付着したＳｉ3 Ｎ4 を取り除く。この時に
は、（２）ないし（４）に示す反応式に従ってクリーニ
ングがされる。 クリーニング時 Ｓｉ3Ｎ4＋ＮＦ3＋ＳｉＨ4＋ＮＨ3＋Ｎ2→ＳｉxＦy＋反応副生成物＋Ｎ2 （ ２） ケース１ ＳｉxＦy＋ＮＦ3＋反応副生成物→（ＮＨ4）2ＳｉＦ6＋Ｘ （３） ケース２ ＳｉＨ4＋２ＮＨ3＋２ＮＦ3→（ＮＨ4）2ＳｉＦ6＋Ｘ （４）Si which is a product accumulated on the inner wall of the reaction vessel
3 N 4 increases in thickness as the number of times of film formation increases, peels off from the inner wall, falls on the wafer during film formation, and causes contamination. Therefore, in plasma CVD or the like, cleaning is performed using NF 3 gas every several times of film formation to remove Si 3 N 4 adhered to the wall. At this time, cleaning is performed according to the reaction formulas (2) to (4). During cleaning Si 3 N 4 + NF 3 + SiH 4 + NH 3 + N 2 → Si x F y + reaction by-product + N 2 (2) Case 1 Six x F y + NF 3 + reaction by-product → (NH 4 ) 2 SiF 6 + X (3) case 2 SiH 4 + 2NH 3 + 2NF 3 → (NH 4) 2 SiF 6 + X (4)
【０００６】この時に副生成物として（ＮＨ4 ）2 Ｓｉ
Ｆ6 が生成する。この物質も常圧においては約３００℃
で気化するが、それ以下の温度域においては固体であ
り、前記したように真空排気配管や真空ポンプに付着す
る。特に、真空ポンプに副生成物が付着して故障した場
合は、生産ラインが停止して大きな損害となる。そのた
め、多くのＣＶＤ装置の生産ラインでは、ＣＶＤ装置と
真空ポンプとの間に副生成物トラップ装置を設け、真空
ポンプになるべく副生成物が付着しないような工夫をし
ている。At this time, as a by-product, (NH 4 ) 2 Si
F 6 is generated. This material is also about 300 ℃ under normal pressure
However, it is solid in the temperature range lower than that and adheres to the vacuum exhaust pipe or the vacuum pump as described above. In particular, if a by-product adheres to the vacuum pump and breaks down, the production line will be stopped, resulting in great damage. Therefore, in many CVD production lines, a by-product trap device is provided between the CVD device and the vacuum pump so that the by-product does not adhere to the vacuum pump as much as possible.
【０００７】[0007]
【発明が解決しようとする課題】しかし、従来の副生成
物トラップ装置においては、副生成物が溜まると真空排
気を停止して排気系配管から外し、水洗（ＮＨ4 Ｃｌ，
（ＮＨ4 ）2 ＳｉＣｌ6はいずれも水溶性）して付着生
成物を取り除き、その後、配管に設置し、再度真空排気
する。従って、排気系配管の「ばらし」と再組立および
真空リーク、再真空排気の労力を必要とする上に、一
度、真空系を大気開放してしまうと再び元の真空度にす
るのに長い時間がかかったり、ベーキング等の作業を必
要とすることもあり生産性が悪い。However, in the conventional by-product trap device, when the by-products are accumulated, the vacuum exhaust is stopped, the exhaust system pipe is removed, and the by-product (NH 4 Cl,
(NH 4 ) 2 SiCl 6 is water-soluble to remove the adhering product, and then it is installed in a pipe and evacuated again. Therefore, it requires the labor of "disassembling" the exhaust system piping, reassembling, vacuum leak, and re-evacuating, and once the vacuum system is opened to the atmosphere, it takes a long time to restore the original vacuum degree. Productivity is poor because it may take time and requires work such as baking.
【０００８】本発明は、真空排気系を「ばらす」ことな
く、副生成物を洗浄できかつ効率よく副生成物をトラッ
プできるような副生成物トラップ装置を提供することを
目的とする。It is an object of the present invention to provide a by-product trap device which can wash the by-product and efficiently trap the by-product without "disassembling" the vacuum exhaust system.
【０００９】[0009]
【課題を解決するための手段】本発明は上記課題を解決
するためになされたもので、成膜装置の排気系に取り付
けられ、上記成膜装置の排気中に含まれる生成物及び／
又は副生成物をトラップ部に固化させて捕集するトラッ
プ装置本体と、上記トラップ装置本体に設けられ、固化
した生成物及び／又は副生成物を加熱するヒータと、上
記トラップ装置に弁を介して接続され、加熱されて気化
した生成物及び／又は副生成物を排気する洗浄排気系
と、上記トラップ部を強制的に冷却する冷却手段とを有
するもので、成膜時にはトラップ部を冷却してこれに生
成物及び又は副生成物を固着させ、洗浄時にはトラップ
部を加熱して生成物及び／又は副生成物を排出するよう
になっている。The present invention has been made in order to solve the above-mentioned problems, and it is a product attached to an exhaust system of a film forming apparatus and contained in the exhaust gas of the film forming apparatus.
Alternatively, a trap device body for solidifying and collecting the by-product in the trap portion, a heater provided in the trap device body for heating the solidified product and / or the by-product, and a valve for the trap device. Connected to each other and having a cleaning and exhaust system for exhausting heated and vaporized products and / or byproducts, and a cooling means for forcibly cooling the trap section. The product and / or the by-product are fixed to this, and at the time of cleaning, the trap part is heated to discharge the product and / or the by-product.
【００１０】さらにこの発明の別の態様は、上記洗浄排
気系に、トラップ装置本体内を吸引して低圧にするポン
プ装置を設けたものである。さらに、この発明の別の態
様は、上記洗浄排気系に、トラップ装置本体内部に空気
またはＮ2 ガスなどの不活性ガスを供給して副生成物の
ガスを強制排気するガス供給装置を設けたものである。Still another aspect of the present invention is that the cleaning / exhaust system is provided with a pump device for sucking the inside of the trap device body to lower the pressure. Further, according to another aspect of the present invention, the cleaning / exhausting system is provided with a gas supply device for supplying an inert gas such as air or N 2 gas into the interior of the trap device main body to forcibly exhaust the by-product gas. It is a thing.
【００１１】[0011]
【作用】本発明においては、トラップ装置本体におい
て、冷却されたトラップ部に生成物及び／又は副生成物
が効率的に固化されて捕集され、これはヒータ加熱によ
って昇華又は分解された後、弁を介して接続された洗浄
排気系により系外に排出される。In the present invention, in the trap apparatus main body, the product and / or by-product is efficiently solidified and collected in the cooled trap portion, which is sublimated or decomposed by heating with the heater, It is discharged to the outside of the system by a cleaning exhaust system connected via a valve.
【００１２】また、この発明の別の態様においては、、
上記トラップ装置本体に、トラップ部を強制的に冷却す
る冷却媒体流路を形成したものである。さらにこの発明
の別の態様においては、トラップ装置本体内を吸引して
低圧にするポンプ装置により、常圧よりも昇華温度が低
くなるので、ヒータによる加熱温度を低くして同じ洗浄
効果を得る。さらに、この発明の別の態様においては、
空気またはＮ2 ガスなどの不活性ガスによって副生成物
のガスが強制排気され、洗浄排気系のポンプが不要とな
る。In another aspect of the present invention,
A cooling medium flow path for forcibly cooling the trap portion is formed in the trap device body. Further, in another aspect of the present invention, since the sublimation temperature is lower than the normal pressure by the pump device that sucks the inside of the trap device main body to lower the pressure, the heating temperature by the heater is lowered to obtain the same cleaning effect. Further, in another aspect of the present invention,
By-product gas is forcibly exhausted by an inert gas such as air or N 2 gas, and a cleaning exhaust system pump is not required.
【００１３】[0013]
【実施例】図１に、本発明の副生成物トラップ装置を示
す。この図を用いて本発明の装置及び方法を説明する。
この副生成物トラップ装置は、成膜装置であるＣＶＤ装
置１と、このＣＶＤ装置１に連結された主排気（真空）
ポンプ２と、この両者の間に介在し、上記ＣＶＤ装置の
排気中に含まれる生成物及び副生成物を固着させてトラ
ップするトラップ装置本体３（以下、本体と略す。）と
を有する。本体３とＣＶＤ装置１、本体３と主排気ポン
プ２の間をつなぐ配管４，５には、それぞれ弁Ｖ1，Ｖ2
が配置されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT FIG. 1 shows a by-product trap device of the present invention. The apparatus and method of the present invention will be described with reference to this figure.
The by-product trap device is a CVD device 1 which is a film forming device, and a main exhaust (vacuum) connected to the CVD device 1.
It has a pump 2 and a trap device main body 3 (hereinafter, abbreviated as main body) that is interposed between the pump 2 and the product and by-product contained in the exhaust gas of the CVD device to be fixed and trapped. The pipes 4 and 5 connecting the main body 3 and the CVD apparatus 1 and between the main body 3 and the main exhaust pump 2 have valves V 1 and V 2 respectively.
Is arranged.
【００１４】ＣＶＤ装置１、弁Ｖ1、本体３、弁Ｖ2、主
排気ポンプ２によって、成膜を円滑に行うための主（成
膜用）排気系Ａが構成されている。主排気ポンプ２の下
流には、排気中に含まれる有害物質を処理する除害装置
６が設けられている。本体３と弁Ｖ1をつなぐ配管４の
途中には分岐配管７が設けられ、弁Ｖ3を介して副排気
（真空）ポンプ８に接続され、さらに除害装置６に接続
されている。この分岐配管７及び弁Ｖ3から副排気ポン
プ８に至る配管９には、ヒータ１０が取り付けられてい
る。本体３とこの分岐配管７、弁Ｖ3、配管９、副排気
ポンプ８によって、洗浄排気系Ｂが構成されている。The CVD apparatus 1, the valve V 1 , the main body 3, the valve V 2 , and the main exhaust pump 2 constitute a main (for film formation) exhaust system A for smoothly performing film formation. Downstream of the main exhaust pump 2, a detoxifying device 6 for treating harmful substances contained in the exhaust is provided. A branch pipe 7 is provided in the middle of a pipe 4 connecting the main body 3 and the valve V 1 , connected to a sub exhaust (vacuum) pump 8 via a valve V 3 , and further connected to an abatement device 6. A heater 10 is attached to the branch pipe 7 and a pipe 9 extending from the valve V 3 to the auxiliary exhaust pump 8. The main body 3, the branch pipe 7, the valve V 3 , the pipe 9, and the auxiliary exhaust pump 8 constitute a cleaning exhaust system B.
【００１５】図２は、本体３の断面図を示すもので、ケ
ース１１の内部に副生成物を積極的にトラップするため
のトラップ板１２が取付けてあり、このケース１１の内
表面及びトラップ板１２の双方がトラップ部となる。ケ
ース１１には、冷却ジャケット１３が形成され、これに
は冷却水を供給するための冷却管１４が接続されてい
る。また、ケース１１には、本体３の全体及びトラップ
板１２を加熱するためのヒータ１５（図１参照）が取付
けられている。本体３及び洗浄排気系Ｂのヒータ１５
は、リボンヒータを取付けてもよいし、発熱体を本体及
び排気系配管に溶射するようにしても良い。FIG. 2 is a sectional view of the main body 3, in which a case 11 is provided with a trap plate 12 for positively trapping a by-product, and an inner surface of the case 11 and the trap plate. Both 12 are the trap units. A cooling jacket 13 is formed on the case 11, and a cooling pipe 14 for supplying cooling water is connected to the cooling jacket 13. A heater 15 (see FIG. 1) for heating the entire main body 3 and the trap plate 12 is attached to the case 11. Main body 3 and heater 15 for cleaning exhaust system B
A ribbon heater may be attached, or a heating element may be sprayed onto the main body and the exhaust system pipe.
【００１６】以下に、上のように構成されたトラップ装
置の作用について説明する。成膜時には弁Ｖ1 ，Ｖ2 を
開き、Ｖ3 を閉じることによって、成膜用の主排気系Ａ
が使用される。この時には、冷却管１４に水や液体窒素
などを流し、トラップ部の温度を低下させて副生成物を
より補足しやすくする。普通には水で十分である。図に
示すような構成の装置では、本体３の内部でも真空度は
１０〜１０-1Torr台と考えられる。真空状態において
は、副生成物の昇華温度は常圧時よりも低いので、積極
的にトラップ部を冷却することにより副生成物を補足す
ることができる。図３（日本化学会編、化学便覧基礎編
２、丸善 1984 P２−111）に示すように、ＮＨ4 Ｃｌ
の昇華温度は、理論値(1)からは１０Torrで約２１０℃
である。The operation of the trap device constructed as above will be described below. By opening the valves V 1 and V 2 and closing V 3 during film formation, the main exhaust system A for film formation
Is used. At this time, water, liquid nitrogen, or the like is caused to flow through the cooling pipe 14 to lower the temperature of the trap portion and make it easier to capture the by-products. Water is usually sufficient. In the apparatus having the configuration shown in the figure, the degree of vacuum is considered to be in the range of 10 to 10 -1 Torr even inside the main body 3. In the vacuum state, the sublimation temperature of the by-product is lower than that under normal pressure, so that the by-product can be supplemented by actively cooling the trap portion. As shown in Fig. 3 (Chemical Society of Japan, Basic Handbook for Chemistry 2, Maruzen 1984 P2-111), NH 4 Cl
Sublimation temperature is 10 Torr from theoretical value (1) , about 210 ℃
Is.
【００１７】このようにして、ポンプの目詰まりの原因
となる副生成物を排気ガス中からトラップさせることに
より、トラップ装置本体３以降の排気系配管及びポンプ
部への副生成物の飛翔が著しく少なくなり、これによっ
て、ポンプの目詰まりをなくし、ポンプの故障→停止→
成膜ラインの停止をなくすことができる。By thus trapping the by-product that causes the clogging of the pump from the exhaust gas, the by-product is remarkably fly to the exhaust system piping and the pump section after the trap device main body 3. Less, which eliminates pump clogging and pump failure → stop →
It is possible to avoid stopping the film forming line.
【００１８】成膜処理がある程度なされた時点で、成膜
処理が行われていない時を見計らってトラップ装置本体
３の洗浄を行う。この時には、バルブＶ1 ，Ｖ2 を閉
じ、バルブＶ3 を開け、洗浄系Ｂの真空ポンプ２を運転
する。この時、本体３のヒータ１５をＯＮにし、トラッ
プ部の温度を昇華点以上の温度に上げ、かつ本体３を真
空状態にする。このように、本体３を真空状態にするこ
とにより、大気圧状態よりも低温域で昇華または分解ガ
ス化が可能である（１０Torrで約２１０℃であるのでこ
の時の温度は２２０〜３００℃程度で十分である）。When the film forming process is performed to some extent, the trap device main body 3 is cleaned in anticipation of when the film forming process is not being executed. At this time, the valves V 1 and V 2 are closed, the valve V 3 is opened, and the vacuum pump 2 of the cleaning system B is operated. At this time, the heater 15 of the main body 3 is turned on, the temperature of the trap portion is raised to a temperature above the sublimation point, and the main body 3 is brought into a vacuum state. Thus, by making the main body 3 in a vacuum state, it is possible to sublimate or decompose gasify in a temperature range lower than the atmospheric pressure state (because it is about 210 ° C. at 10 Torr, the temperature at this time is about 220 to 300 ° C.). Is sufficient).
【００１９】同時に排気系Ｂの配管７，９の温度を高
め、配管に副生成物が付着しないようにする。この時の
配管の温度は２２０〜３００℃程度を理想とするが、そ
れよりも低い温度であっても、副生成物の付着は著しく
少ない。副生成物が、式（１）に示されるようなＮＨ4
Ｃｌであれば、昇華することにより分解して、ＮＨ3 と
ＨＣｌになる。これらのガスは除害装置で無害化し大気
中に放出する。At the same time, the temperature of the pipes 7 and 9 of the exhaust system B is raised to prevent by-products from adhering to the pipes. The temperature of the pipe at this time is ideally about 220 to 300 ° C., but even if the temperature is lower than that, the adhesion of by-products is extremely small. The by-product is NH 4 as shown in formula (1).
If it is Cl, it is decomposed by sublimation into NH 3 and HCl. These gases are detoxified by an abatement device and released into the atmosphere.
【００２０】図１では、主真空ポンプをドライのルーツ
ポンプ、副真空ポンプをルーツポンプよりも低廉な油回
転ポンプとして示している。成膜処理においては、油の
逆流する油回転ポンプは好ましくなく、また、本体のみ
の洗浄に高価なルーツポンプを使用する必要もないの
で、このような組み合わせにしたものである。しかし、
真空ポンプ１、真空ポンプ２を両方ともルーツポンプ、
または油回転ポンプとしてもよい。また、真空ポンプは
ここで述べたような、ルーツポンプ、油回転ポンプ以外
であってもかまわない。In FIG. 1, the main vacuum pump is shown as a dry roots pump, and the sub vacuum pump is shown as an oil rotary pump which is cheaper than the roots pump. In the film forming process, an oil rotary pump in which oil flows backward is not preferable, and since it is not necessary to use an expensive roots pump for cleaning only the main body, such a combination is used. But,
Both vacuum pump 1 and vacuum pump 2 are roots pumps,
Alternatively, an oil rotary pump may be used. Further, the vacuum pump may be other than the roots pump and the oil rotary pump as described here.
【００２１】図１の場合、洗浄用の排気に用いる副真空
ポンプ（油回転ポンプ）にも副生成物の付着が危惧され
るが、真空ポンプ直前まで配管の温度を上げておくこと
により、ポンプ内に排気ガスが入ってもガス温度が著し
く低下することがないので、ここでの付着は少ない。こ
のような付着の懸念から洗浄用の排気に副真空ポンプ８
を用いたくない場合は、図４に示すように、本体３と弁
Ｖ2の間に弁Ｖ4を介してコンプレッサ１６を設け、これ
によって空気またはＮ2 などの不活性ガスを供給するよ
うにしてもよい。この場合には、トラップ部の温度を昇
華点、または副生成物がガス化し分解する温度以上に
し、バルブＶ1，Ｖ2を閉じＶ3，Ｖ4を開にし、空気また
はＮ2などの不活性ガスを流すことにより、副生成物の
ガスを除害装置まで移送し、副生成物トラップ装置を洗
浄する。コスト面から考えて、流すガスは空気で十分で
ある。In the case of FIG. 1, by-products may be attached to the sub-vacuum pump (oil rotary pump) used for exhausting the cleaning gas. However, by raising the temperature of the pipe just before the vacuum pump, Since the gas temperature does not drop remarkably even if exhaust gas enters, there is little adhesion here. Due to such concern of adhesion, the auxiliary vacuum pump 8 is used for cleaning exhaust.
If it is not desired to use a compressor, as shown in FIG. 4, a compressor 16 is provided between the main body 3 and the valve V 2 via a valve V 4 so as to supply air or an inert gas such as N 2. May be. In this case, the temperature of the trap part is set to a temperature higher than the sublimation point or the temperature at which the by-products are gasified and decomposed, the valves V 1 and V 2 are closed, and V 3 and V 4 are opened, and air or N 2 is not added. By flowing the active gas, the by-product gas is transferred to the abatement device and the by-product trap device is cleaned. Air is sufficient as the gas to flow from the viewpoint of cost.
【００２２】以上は、副生成物がＮＨ4 Ｃｌである場合
を中心に述べたが、副生成物が（ＮＨ4）2 ＳｉＦ6
や、ＡｌＣｌ3 などの場合であってもトラップ方法、洗
浄方法は同様である。The above description has been centered on the case where the by-product is NH 4 Cl, but the by-product is (NH 4 ) 2 SiF 6
In the case of AlCl 3 or the like, the trapping method and the cleaning method are the same.
【００２３】[0023]
【発明の効果】以上述べたように、真空ポンプの目詰ま
りの原因となる副生成物が生成する成膜中には、副生成
物トラップ装置本体の温度を下げて積極的に副生成物を
捕集し、真空ポンプの目詰まり発生を低減させ、ポンプ
の寿命を延長させる。一方、成膜をしていないときに
は、本体内部を高温かつ低圧にして、常圧よりも低い温
度域で、主排気ラインから本体を外すことなくインライ
ンで副生成物の洗浄を行わせる。従って、本発明の副生
成物トラップ装置を成膜装置に取付ければ、稼働率が上
がり、成膜の生産性の向上につながる。As described above, during the film formation in which the by-product that causes the clogging of the vacuum pump is generated, the temperature of the by-product trap device main body is lowered to positively remove the by-product. It collects and reduces the occurrence of clogging of the vacuum pump and prolongs the life of the pump. On the other hand, when the film is not formed, the inside of the main body is heated to a high temperature and a low pressure, and the by-products are cleaned in-line in a temperature range lower than normal pressure without removing the main body from the main exhaust line. Therefore, if the by-product trap device of the present invention is attached to the film forming apparatus, the operating rate is increased and the productivity of film formation is improved.
【図１】本発明の副生成物トラップ装置の一実施例を示
す模式図である。FIG. 1 is a schematic view showing an embodiment of a by-product trap device of the present invention.
【図２】トラップ装置本体の断面図である。FIG. 2 is a cross-sectional view of a trap device body.
【図３】真空度と昇華温度の関係（理論値）を示した図
である。FIG. 3 is a diagram showing the relationship (theoretical value) between the degree of vacuum and the sublimation temperature.
【図４】洗浄時の副生成物トラップ装置の他の実施例を
示す模式図である。FIG. 4 is a schematic view showing another embodiment of the by-product trap device during cleaning.
１ ＣＶＤ装置 ２ 主排気ポンプ ３ トラップ装置本体 ８ 副排気ポンプ １０ ヒータ １１ ケース １２ トラップ板 １４ 冷却管 １５ ヒータ １６ コンプレッサ Ａ 主排気系 Ｂ 洗浄排気系 1 CVD Device 2 Main Exhaust Pump 3 Trap Device Main Body 8 Sub-Exhaust Pump 10 Heater 11 Case 12 Trap Plate 14 Cooling Pipe 15 Heater 16 Compressor A Main Exhaust System B Cleaning Exhaust System
Claims (6)
膜装置の排気中に含まれる生成物及び／又は副生成物を
トラップ部に固化させて捕集するトラップ装置本体と、 上記トラップ装置本体に設けられ、固化した生成物及び
／又は副生成物を加熱するヒータと、 上記トラップ装置に弁を介して接続され、加熱されて気
化した生成物及び／又は副生成物を排気する洗浄排気系
と、 上記トラップ部を強制的に冷却する冷却手段とを有し、 成膜時にはトラップ部を冷却してこれに生成物及び又は
副生成物を固着させ、洗浄時にはトラップ部を加熱して
生成物及び／又は副生成物を排出するようになっている
ことを特徴とする副生成物トラップ装置。1. A trap device main body, which is attached to an exhaust system of a film forming apparatus and which solidifies and collects a product and / or a by-product contained in the exhaust gas of the film forming apparatus in a trap portion, and the trap. A heater provided in the main body of the apparatus for heating the solidified product and / or by-product, and a cleaning device connected to the trap device via a valve for exhausting the heated and vaporized product and / or by-product It has an exhaust system and a cooling means for forcibly cooling the trap part. During film formation, the trap part is cooled and the product and / or by-products are fixed thereto, and during cleaning, the trap part is heated. A by-product trap device, which is configured to discharge a product and / or a by-product.
を吸引して低圧にするポンプ装置が設けられていること
を特徴とする請求項１に記載のトラップ装置。2. The trap device according to claim 1, wherein the cleaning / exhaust system is provided with a pump device for sucking the inside of the trap device body to reduce the pressure thereof.
部に空気またはＮ2 ガスなどの不活性ガスを供給して副
生成物のガスを強制排気するガス供給装置が設けられて
いることを特徴とする請求項１に記載のトラップ装置。3. The cleaning / exhaust system is provided with a gas supply device for supplying an inert gas such as air or N 2 gas into the interior of the trap device body to forcibly exhaust the gas of a by-product. The trap device according to claim 1, which is characterized in that.
て、成膜装置の排気中に含まれる生成物及び／又は副生
成物をトラップ部に固化させる捕集工程と、 上記トラップ装置本体を加熱して、固化した生成物及び
／又は副生成物を気化させるとともに、上記トラップ装
置に弁を介して接続された洗浄排気系によって、加熱さ
れて気化した生成物及び／又は副生成物を排気する工程
とを有することを特徴とするトラップ装置の洗浄方法。4. A trapping step of cooling the trap section of the trap apparatus body to solidify a product and / or by-product contained in the exhaust gas of the film forming apparatus in the trap section, and heating the trap apparatus body. And vaporize the solidified product and / or by-product, and exhaust the heated and vaporized product and / or by-product by the cleaning exhaust system connected to the trap device via a valve. A method for cleaning a trap device, comprising:
引して低圧にした状態で行うことを特徴とする請求項４
に記載のトラップ装置の洗浄方法。5. The cleaning step is performed in a state where the inside of the trap device main body is sucked to a low pressure.
The method for cleaning a trap device according to 1.
空気またはＮ2 ガスなどの不活性ガスを供給して副生成
物のガスを強制排気して行うことを特徴とする請求項４
に記載のトラップ装置の洗浄方法。6. The cleaning step is carried out by supplying air or an inert gas such as N 2 gas into the main body of the trap device and forcibly exhausting the gas of the by-product.
The method for cleaning a trap device according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33416594A JP3539446B2 (en) | 1994-12-16 | 1994-12-16 | By-product trap device and cleaning method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33416594A JP3539446B2 (en) | 1994-12-16 | 1994-12-16 | By-product trap device and cleaning method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08172083A true JPH08172083A (en) | 1996-07-02 |
| JP3539446B2 JP3539446B2 (en) | 2004-07-07 |
Family
ID=18274271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33416594A Expired - Fee Related JP3539446B2 (en) | 1994-12-16 | 1994-12-16 | By-product trap device and cleaning method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3539446B2 (en) |
Cited By (15)
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|---|---|---|---|---|
| JPH10220832A (en) * | 1997-02-03 | 1998-08-21 | Mitsubishi Heavy Ind Ltd | Safety device |
| JPH111773A (en) * | 1997-06-09 | 1999-01-06 | Tokyo Electron Ltd | Discharge device and discharge method |
| JPH1199327A (en) * | 1997-09-26 | 1999-04-13 | Tokyo Electron Ltd | Vacuum treatment apparatus |
| JP2001291672A (en) * | 2000-04-07 | 2001-10-19 | Denso Corp | Film deposition system |
| JP2003209100A (en) * | 2002-01-15 | 2003-07-25 | Tokura Kogyo Kk | Removing method for ammonium chloride stuck and deposited on cvd exhaust piping |
| WO2004006313A1 (en) * | 2002-07-04 | 2004-01-15 | Kabushiki Kaisha Watanabe Shoko | Apparatus for forming film |
| JP2004071723A (en) * | 2002-08-05 | 2004-03-04 | Tokyo Electron Ltd | Vacuum treatment apparatus and its operating method |
| JP2008535211A (en) * | 2005-03-22 | 2008-08-28 | エドワーズ リミテッド | Trap device |
| JP2008544844A (en) * | 2005-07-01 | 2008-12-11 | ニュープロテック・カンパニー・リミテッド | By-product collection device for semiconductor manufacturing process |
| US7631651B2 (en) | 2005-09-05 | 2009-12-15 | Kabushiki Kaisha Toshiba | Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| WO2013146982A1 (en) * | 2012-03-29 | 2013-10-03 | 東京エレクトロン株式会社 | Trap mechanism, exhaust system, and film formation device |
| KR101442781B1 (en) * | 2008-07-25 | 2014-09-23 | 주식회사 원익아이피에스 | Apparatus for manufacturing semiconductor chip and method for treating an exhausting gas of the same |
| JPWO2020226058A1 (en) * | 2019-05-08 | 2020-11-12 | ||
| JP2021064665A (en) * | 2019-10-11 | 2021-04-22 | ミラエボ カンパニー リミテッド | Reaction by-product collector for semiconductor process with cooling channel |
| KR102490651B1 (en) * | 2022-08-18 | 2023-01-20 | 주식회사 미래보 | Process stop loss reduction system through rapid replacement of apparatus for trapping of reaction by-product for semiconductor process |
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| JPH06326033A (en) * | 1993-05-14 | 1994-11-25 | Sony Corp | Thin-film forming device with preventive device against raising dust |
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Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10220832A (en) * | 1997-02-03 | 1998-08-21 | Mitsubishi Heavy Ind Ltd | Safety device |
| JPH111773A (en) * | 1997-06-09 | 1999-01-06 | Tokyo Electron Ltd | Discharge device and discharge method |
| JPH1199327A (en) * | 1997-09-26 | 1999-04-13 | Tokyo Electron Ltd | Vacuum treatment apparatus |
| JP2001291672A (en) * | 2000-04-07 | 2001-10-19 | Denso Corp | Film deposition system |
| JP2003209100A (en) * | 2002-01-15 | 2003-07-25 | Tokura Kogyo Kk | Removing method for ammonium chloride stuck and deposited on cvd exhaust piping |
| WO2004006313A1 (en) * | 2002-07-04 | 2004-01-15 | Kabushiki Kaisha Watanabe Shoko | Apparatus for forming film |
| JP2004039921A (en) * | 2002-07-04 | 2004-02-05 | Watanabe Shoko:Kk | Film forming apparatus |
| JP2004071723A (en) * | 2002-08-05 | 2004-03-04 | Tokyo Electron Ltd | Vacuum treatment apparatus and its operating method |
| JP4885943B2 (en) * | 2005-03-22 | 2012-02-29 | エドワーズ リミテッド | Trap device |
| JP2008535211A (en) * | 2005-03-22 | 2008-08-28 | エドワーズ リミテッド | Trap device |
| JP2008544844A (en) * | 2005-07-01 | 2008-12-11 | ニュープロテック・カンパニー・リミテッド | By-product collection device for semiconductor manufacturing process |
| US7631651B2 (en) | 2005-09-05 | 2009-12-15 | Kabushiki Kaisha Toshiba | Cleaning method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| KR101442781B1 (en) * | 2008-07-25 | 2014-09-23 | 주식회사 원익아이피에스 | Apparatus for manufacturing semiconductor chip and method for treating an exhausting gas of the same |
| WO2013146982A1 (en) * | 2012-03-29 | 2013-10-03 | 東京エレクトロン株式会社 | Trap mechanism, exhaust system, and film formation device |
| JP2013227648A (en) * | 2012-03-29 | 2013-11-07 | Tokyo Electron Ltd | Trap mechanism, exhaust system, and film formation device |
| KR20140138186A (en) | 2012-03-29 | 2014-12-03 | 도쿄엘렉트론가부시키가이샤 | Trap mechanism, exhaust system, and film formation device |
| CN104246007A (en) * | 2012-03-29 | 2014-12-24 | 东京毅力科创株式会社 | Trap mechanism, exhaust system, and film formation device |
| US10036090B2 (en) | 2012-03-29 | 2018-07-31 | Tokyo Electron Limited | Trap mechanism, exhaust system, and film formation device |
| JPWO2020226058A1 (en) * | 2019-05-08 | 2020-11-12 | ||
| WO2020226058A1 (en) * | 2019-05-08 | 2020-11-12 | 株式会社ニューフレアテクノロジー | Vapor phase growth method and vapor phase growth device |
| CN113795909A (en) * | 2019-05-08 | 2021-12-14 | 纽富来科技股份有限公司 | Vapor phase growth method and vapor phase growth apparatus |
| JP2021064665A (en) * | 2019-10-11 | 2021-04-22 | ミラエボ カンパニー リミテッド | Reaction by-product collector for semiconductor process with cooling channel |
| KR102490651B1 (en) * | 2022-08-18 | 2023-01-20 | 주식회사 미래보 | Process stop loss reduction system through rapid replacement of apparatus for trapping of reaction by-product for semiconductor process |
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