JP2952795B2 - Semiconductor device manufacturing method and semiconductor manufacturing apparatus purging method - Google Patents
Semiconductor device manufacturing method and semiconductor manufacturing apparatus purging methodInfo
- Publication number
- JP2952795B2 JP2952795B2 JP3339215A JP33921591A JP2952795B2 JP 2952795 B2 JP2952795 B2 JP 2952795B2 JP 3339215 A JP3339215 A JP 3339215A JP 33921591 A JP33921591 A JP 33921591A JP 2952795 B2 JP2952795 B2 JP 2952795B2
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- Japan
- Prior art keywords
- reaction chamber
- purging
- pressure
- ejector
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造方法
及び半導体製造装置のパージ方法に関し、さらに詳しく
は、ＬＰＣＶＤ（低圧化学気相成長）装置などのように
反応室内を減圧して被処理物に対して処理を行う半導体
装置の製造方法及び半導体製造装置のパージ方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device.
More specifically, the present invention relates to a method for purging a semiconductor manufacturing apparatus , and more particularly, to a semiconductor for processing an object to be processed by depressurizing a reaction chamber like an LPCVD (low pressure chemical vapor deposition) apparatus.
The present invention relates to an apparatus manufacturing method and a semiconductor manufacturing apparatus purging method .
【０００２】[0002]
【従来の技術】従来のＬＰＣＶＤ装置として、図３に示
される横型の装置がある。2. Description of the Related Art As a conventional LPCVD apparatus, there is a horizontal apparatus shown in FIG.
【０００３】このようなＬＰＣＶＤ装置では、先ず、ヒ
ータ１で温められた反応室２内に被処理物を入れた後、
反応室２の気密を保ち、真空ポンプ３により排気系配管
４を通して反応室２内を、例えば、０.０１Ｔｏｒｒ付
近まで減圧する。次に、反応室入り口５から反応ガスを
導入し、被処理物に対して処理を行う。例えば、ＴＥＯ
Ｓ（テトラ・エトキシ・シラン）を用いて処理を行う
と、被処理物に対して処理が行われるとともに、排気系
配管４の内側には反応生成物６を生じる。処理後は、反
応室２内のガスパージを行った後、大気圧に復帰させ、
被処理物を取り出して処理を終了する。なお、図３にお
いて、７は大径の排気系配管に設けられた第１電磁弁、
８は分岐された小径の排気系配管に設けられた第２電磁
弁である。In such an LPCVD apparatus, first, an object to be processed is placed in a reaction chamber 2 heated by a heater 1, and then,
The pressure inside the reaction chamber 2 is reduced to, for example, around 0.01 Torr by the vacuum pump 3 through the exhaust pipe 4 while keeping the airtightness of the reaction chamber 2. Next, a reaction gas is introduced from the inlet 5 of the reaction chamber, and the object is processed. For example, TEO
When processing is performed using S (tetraethoxysilane), the processing is performed on the processing target, and a reaction product 6 is generated inside the exhaust pipe 4. After the treatment, the gas in the reaction chamber 2 is purged and then returned to the atmospheric pressure.
The processing object is taken out and the processing ends. In FIG. 3, reference numeral 7 denotes a first solenoid valve provided in a large-diameter exhaust system pipe,
Reference numeral 8 denotes a second solenoid valve provided on a branched small-diameter exhaust system pipe.
【０００４】[0004]
【発明が解決しようとする課題】このようなＬＰＣＶＤ
装置では、処理が終了して次の被処理物を導入するまで
の間、大気圧の状態で待機していると、反応生成物６か
ら揮発性ガスを生じ、反応室２内に充満し、この揮発性
ガスが反応室２内に存在する状態で、次の被処理物を導
入すると、被処理物に揮発性ガスによるシミを生じ、こ
のシミによって異常成長するといった難点があり、この
ため、処理待機時には、揮発性ガスのパージを行うため
に、真空ポンプ３による強制排気を行っているが、真空
ポンプ３では、必要以上に減圧されてしまい、大気圧へ
の復帰時間が長くなり、処理サイクルタイムが長くなる
という難点がある。SUMMARY OF THE INVENTION Such LPCVD
In the apparatus, if the process is completed and a standby state is maintained at the atmospheric pressure until the next object to be processed is introduced, a volatile gas is generated from the reaction product 6 and is filled in the reaction chamber 2. When the next object to be treated is introduced in a state where the volatile gas is present in the reaction chamber 2, there is a disadvantage that the object is stained by the volatile gas and abnormally grows due to the stain. At the time of processing standby, forcible evacuation is performed by the vacuum pump 3 in order to purge volatile gas. However, the vacuum pump 3 is depressurized more than necessary, and the time required to return to the atmospheric pressure becomes longer. There is a disadvantage that the cycle time is long.
【０００５】本発明は、上述の点に鑑みて為されたもの
であって、反応室内に不所望に生じる揮発性ガスのパー
ジを行なうことにより、揮発性ガスによる被処理物への
シミの発生を防止するとともに、処理サイクルタイムを
短くすることを目的とする。[0005] The present invention was made in view of the above, by Nau line purging of volatile gases produced undesirably in the reaction chamber, to the object to be processed by the volatile gases
The rewritable prevent stains, and an object thereof is to shorten the process cycle time.
【０００６】[0006]
【課題を解決するための手段】本発明では、上述の目的
を達成するために、次のように構成している。In order to achieve the above-mentioned object, the present invention is configured as follows.
【０００７】すなわち、本発明の半導体装置の製造方法
は、反応室に被処理物を収容し、一定の減圧状態の下で
反応室に反応ガスを導入して被処理物を処理する工程
と、被処理物の処理が完了し反応ガスの導入を停止した
後に、反応室に連結されたエゼクターにより反応室をパ
ージして所定の減圧状態に保持する工程とを含むもので
ある。 本発明の半導体装置の製造方法は、また、エゼク
ターにより保持される減圧状態での圧力が２００Ｔｏｒ
ｒ以上とされるものである。 また、本発明の半導体製造
装置のパージ方法は、被処理物の処理が完了し反応ガス
の導入を停止した後に、反応室に連結されたエゼクター
により反応室をパージして所定の減圧状態に保持する工
程を含むものである。 本発明の半導体製造装置のパージ
方法は、また、エゼクターにより保持される減圧状態で
の圧力が２００Ｔｏｒｒ以上とされるものである。 That is, a method of manufacturing a semiconductor device according to the present invention.
Contains the object to be treated in the reaction chamber and
Step of introducing a reaction gas into a reaction chamber to process an object to be processed
And the processing of the object was completed and the introduction of the reaction gas was stopped.
Later, the reaction chamber is pumped by an ejector connected to the reaction chamber.
And maintaining it in a predetermined reduced pressure state.
is there. The method for manufacturing a semiconductor device according to the present invention further comprises:
The pressure in the decompressed state held by the heater is 200 Torr
r or more. In addition, the semiconductor manufacturing method of the present invention
The purging method of the equipment is such that the processing of the object
Ejector connected to the reaction chamber after stopping the introduction of
To purify the reaction chamber and maintain it at a predetermined reduced pressure.
It includes the process. Purging the semiconductor manufacturing apparatus of the present invention
The method can also be performed under reduced pressure held by an ejector.
Is 200 Torr or more.
【０００８】[0008]
【作用】上記の半導体製造装置のパージ方法によれば、
反応室内に不所望な揮発性ガスが生じてもエゼクターに
よって所定の減圧状態、望ましくは２００Ｔｏｒｒ以上
に保持されてパージすることができるため、揮発性ガス
による被処理物へのシミの発生を防止することができる
とともに、従来の真空ポンプによるガスのパージのよう
に必要以上に減圧されることがなく、次の処理を行うた
めの大気圧への復帰時間も短くできることになる。ま
た、本発明の製造方法によれば、反応室での処理後に、
所定の減圧状態、望ましくは２００Ｔｏｒｒ以上で反応
室をパージするため、効率よくパージすることができ、
大気圧への復帰時間を短くすることができる。 According to the above-described method of purging a semiconductor manufacturing apparatus ,
Even if an undesired volatile gas is generated in the reaction chamber, a predetermined reduced pressure state by an ejector , preferably 200 Torr or more
And purging can be prevented, so that generation of stains on the processing object due to the volatile gas can be prevented, and the pressure can be reduced more than necessary as in the case of gas purging by a conventional vacuum pump. In addition, the return time to the atmospheric pressure for performing the next process can be shortened. Ma
According to the production method of the present invention, after the treatment in the reaction chamber,
Reaction at a predetermined reduced pressure, preferably 200 Torr or more
Purging the chamber allows efficient purging,
The return time to the atmospheric pressure can be shortened.
【０００９】[0009]
【実施例】以下、図面によって本発明の実施例につい
て、詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the drawings.
【００１０】図１は、本発明の製造方法及びパージ方法
を実施するＬＰＣＶＤ装置の概略構成図であり、上述の
従来例に対応する部分には、同一の参照符号を付す。FIG. 1 shows a manufacturing method and a purging method according to the present invention.
FIG. 1 is a schematic configuration diagram of an LPCVD apparatus that performs the above-described steps, and portions corresponding to the above-described conventional example are denoted by the same reference numerals.
【００１１】このＬＰＣＶＤ装置も、上述の従来例と同
様に、ヒータ１で温められた反応室２内に被処理物を入
れた後、反応室２の気密を保ち、真空ポンプ３により排
気系配管４を通して反応室２内を、例えば、０．０１Ｔ
ｏｒｒ付近まで減圧する。次に、反応室入口５から反応
ガス、例えば、ＴＥＯＳを導入し、被処理物に対して処
理を行う。この処理によって、排気系配管４の内側には
反応生成物６を生じる。処理後は、反応室２内のガスパ
ージを行った後、大気圧に復帰させ、被処理物を取り出
して処理を終了する。[0011] Also this L PCVD apparatus, as in the conventional example described above, after putting the object to be treated into the reaction chamber 2 which is heated by the heater 1, keeping the airtightness of the reaction chamber 2, evacuated by the vacuum pump 3 The inside of the reaction chamber 2 through the system piping 4 is, for example, 0.01 T
Reduce the pressure to around orr. Next, a reaction gas, for example, TEOS is introduced from the reaction chamber inlet 5, and the object is processed. By this processing, a reaction product 6 is generated inside the exhaust pipe 4. After the treatment, the gas in the reaction chamber 2 is purged, and then the pressure is returned to the atmospheric pressure, the object is removed, and the treatment is terminated.
【００１２】本発明の製造方法及びパージ方法において
は、反応生成物６から生じる不所望の揮発性ガスを効率
よくパージするとともに、大気圧への復帰時間を短くす
るために、排気系配管４に排気ライン９を介して反応室
２内のガスを排出するエゼクター１０を設け、このエゼ
クターによって所定の減圧状態でパージできるようにし
ている。なお、排気ライン９には、電磁弁１１が設けら
れている。In the manufacturing method and the purging method of the present invention,
In order to efficiently purge unwanted volatile gas generated from the reaction product 6 and to shorten the time required to return to the atmospheric pressure, the gas in the reaction chamber 2 is connected to the exhaust pipe 4 via the exhaust line 9. the ejector 10 for discharging provided, this Eze
The purifier can be purged under a predetermined reduced pressure state . The exhaust line 9 is provided with a solenoid valve 11.
【００１３】このエゼクター１０は、図２に示されるよ
うに、窒素ガスＮ2 を導入し、反応室２内のガスを排気
ライン９を介して排出し、反応室２を所定の減圧状態で
ある約５００Ｔｏｒｒまで減圧するようになっている。
なお、この減圧は、エゼクター１０内に導入するガス
量、ガス圧によって可変できるものであって、５００Ｔ
ｏｒｒに限る必要がないのは勿論であり、例えば、７０
０Ｔｏｒｒでもよい。但し、あまり減圧しすぎると、大
気圧への復帰の時間を要することになるので、２００Ｔ
ｏｒｒ以上が好ましい。As shown in FIG. 2, the ejector 10 introduces nitrogen gas N 2 , discharges the gas in the reaction chamber 2 through an exhaust line 9, and pressurizes the reaction chamber 2 under a predetermined reduced pressure.
The pressure is reduced to a certain level of about 500 Torr.
This reduced pressure can be varied by the amount of gas introduced into the ejector 10 and the gas pressure.
Of course, it is not necessary to limit to orr.
It may be 0 Torr. However, if the pressure is reduced too much, it takes time to return to the atmospheric pressure.
orr or more is preferable.
【００１４】本発明の製造方法及びパージ方法は、上述
のように、ＬＰＣＶＤ装置の反応室２を大気圧に復帰さ
せて被処理物を取り出して処理を終了した後には、従来
のように真空ポンプ３によって０．０１Ｔｏｒｒ程度ま
で減圧して反応生成物６から生じる揮発性ガスをパージ
するのではなく、エゼクター１０によって反応室２内を
所定の減圧状態である５００Ｔｏｒｒ程度に減圧して揮
発性ガスをパージするものであり、これによって、揮発
性ガスを十分にパージできるとともに、反応室２を大気
圧に復帰させる時間を、従来例の１／３程度に圧縮でき
ることになり、処理サイクルタイムを短くできることに
なる。As described above, according to the manufacturing method and the purging method of the present invention, after the reaction chamber 2 of the LPCVD apparatus is returned to the atmospheric pressure, the object to be processed is taken out, and the processing is completed, the vacuum pump is used as in the prior art. Instead of purging the volatile gas generated from the reaction product 6 by reducing the pressure to about 0.01 Torr by 3, the inside of the reaction chamber 2 is
In this method, the volatile gas is purged by reducing the pressure to about 500 Torr, which is a predetermined reduced pressure state , whereby the volatile gas can be sufficiently purged and the time for returning the reaction chamber 2 to the atmospheric pressure can be reduced. As a result, the processing cycle time can be shortened.
【００１５】上述の実施例では、エゼクター１０には窒
素ガスを導入したけれども、窒素ガスに限るものでな
く、他の不活性ガスを用いてよいのは勿論である。In the above-described embodiment, nitrogen gas is introduced into the ejector 10, but the present invention is not limited to nitrogen gas, and other inert gases may be used.
【００１６】また、上述の実施例では、排気系配管４側
にエゼクター１０を設けたけれども、この位置に限られ
るものではなく、他の実施例として、反応ガスの入口付
近にエゼクターを設けても同様の効果を得ることができ
るものである。Further, in the above embodiment, but it provided ejector 10 to the exhaust system pipe 4 side, limited to this position
Instead , the same effect can be obtained by providing an ejector near the inlet of the reaction gas as another embodiment.
【００１７】上述の実施例では、横型のＬＰＣＶＤ装置
に適用して説明したけれども、本発明は、縦型のＬＰＣ
ＶＤ装置にも同様に適用できるものであり、さらに、反
応室を減圧して処理を行う他の装置、例えば、プラズマ
ＣＶＤ装置などにも同様に適用できるものである。Although the above embodiment has been described with reference to a horizontal LPCVD apparatus, the present invention relates to a vertical LPC.
The present invention can be similarly applied to a VD apparatus, and can also be applied to another apparatus for performing a process by reducing the pressure in a reaction chamber, for example, a plasma CVD apparatus.
【００１８】[0018]
【発明の効果】以上のように本発明のパージ方法によれ
ば、反応室内のガスを、所定の減圧状態、望ましくは２
００Ｔｏｒｒ以上に保持してパージするエゼクターを設
けているので、反応室内に反応生成物による不所望な揮
発性ガスが生じても必要以上に反応室を減圧することな
くパージできるので、従来の真空ポンプによるパージに
比べて反応室の大気圧への復帰時間も短くでき、処理サ
イクルタイムを短くできることになる。また、揮発性ガ
スによる被処理物へのシミの発生を防止することができ
る。更に、本発明の製造方法によれば、反応室での処理
後に、所定の減圧状態、望ましくは２００Ｔｏｒｒ以上
で反応室をパージするため、効率よくパージすることが
でき、大気圧への復帰時間を短くすることができる。 As described above, according to the purging method of the present invention , the gas in the reaction chamber is kept at a predetermined reduced pressure,
Set the ejector to purge it holds more than 00Torr
Because only in that, it can be vacuum reaction chamber more than necessary even undesirable volatile gas generated by the reaction product in a reaction chamber
Since Kupa chromatography can di-, return time to atmospheric pressure of the reaction chamber as compared to purging with conventional vacuum pumps can be shortened, so that a shorter process cycle time. In addition, it is possible to prevent generation of a stain on the object by the volatile gas. Furthermore, according to the production method of the present invention, the treatment in the reaction chamber
Later, a predetermined reduced pressure state, desirably 200 Torr or more
Purging the reaction chamber with
The time required to return to atmospheric pressure can be shortened.
【図１】本発明の製造方法及びパージ方法を適用する一
例であるＬＰＣＶＤ装置の概略構成図である。FIG. 1 shows one example of applying a manufacturing method and a purging method of the present invention.
FIG. 1 is a schematic configuration diagram of an example LPCVD apparatus .
【図２】図１のエゼクターの断面図である。FIG. 2 is a cross-sectional view of the ejector of FIG.
【図３】従来例の概略構成図である。FIG. 3 is a schematic configuration diagram of a conventional example.
２ 反応室 ３ 真空ポンプ １０ エゼクター 2 reaction chamber 3 vacuum pump 10 ejector
フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/205 H01L 21/31 Continuation of the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/205 H01L 21/31
Claims (4)
状態の下で前記反応室に反応ガスを導入して前記被処理
物を処理する工程と、前記被処理物の処理が完了し前記
反応ガスの導入を停止した後に、前記反応室に連結され
たエゼクターにより前記反応室をパージして所定の減圧
状態に保持する工程とを含む半導体装置の製造方法。 An object to be processed is accommodated in a reaction chamber, and a constant pressure is reduced.
The reaction gas is introduced into the reaction chamber under the
Processing the object, and the processing of the object to be processed is completed and
After stopping the introduction of the reaction gas, it is connected to the reaction chamber.
Purging the reaction chamber with an ejector
And a step of maintaining the state.
の圧力が２００Ｔｏｒｒ以上であることを特徴とする請
求項１記載の半導体装置の製造方法。 2. In a state of reduced pressure held by an ejector.
A pressure of 200 Torr or more.
The method for manufacturing a semiconductor device according to claim 1.
状態の下で前記反応室に反応ガスを導入して前記被処理
物を処理する半導体製造装置のパージ方法であって、前
記被処理物の処理が完了し前記反応ガスの導入を停止し
た後に、前記反応室に連結されたエゼクターにより前記
反応室をパージして所定の減圧状態に保持する工程を含
む半導体製造装置のパージ方法。 3. An object to be processed is accommodated in a reaction chamber, and a constant pressure is reduced.
The reaction gas is introduced into the reaction chamber under the
A method for purging a semiconductor manufacturing apparatus for processing objects, comprising:
The treatment of the object to be treated is completed and the introduction of the reaction gas is stopped.
After that, the ejector connected to the reaction chamber
A step of purging the reaction chamber to maintain a predetermined reduced pressure state.
A method for purging a semiconductor manufacturing apparatus.
の圧力が２００Ｔｏｒｒ以上であることを特徴とする請
求項３記載の半導体製造装置のパージ方法。 4. A method under reduced pressure held by an ejector.
A pressure of 200 Torr or more.
The method for purging a semiconductor manufacturing apparatus according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3339215A JP2952795B2 (en) | 1991-12-24 | 1991-12-24 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus purging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3339215A JP2952795B2 (en) | 1991-12-24 | 1991-12-24 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus purging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05175186A JPH05175186A (en) | 1993-07-13 |
| JP2952795B2 true JP2952795B2 (en) | 1999-09-27 |
Family
ID=18325341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3339215A Expired - Fee Related JP2952795B2 (en) | 1991-12-24 | 1991-12-24 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus purging method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2952795B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5067406B2 (en) * | 2009-08-26 | 2012-11-07 | 信越半導体株式会社 | Silicon single crystal manufacturing method and silicon single crystal manufacturing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534158A (en) * | 1978-09-01 | 1980-03-10 | Sony Corp | Vacuum reaction apparatus |
| JPS58161317A (en) * | 1982-03-19 | 1983-09-24 | Hitachi Ltd | Semiconductor processor |
| FR2616884B1 (en) * | 1987-06-19 | 1991-05-10 | Air Liquide | PROCESS FOR THE TREATMENT OF GASEOUS EFFLUENTS FROM THE MANUFACTURE OF ELECTRONIC COMPONENTS AND AN INCINERATION APPARATUS FOR IMPLEMENTING SAME |
-
1991
- 1991-12-24 JP JP3339215A patent/JP2952795B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05175186A (en) | 1993-07-13 |
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