JPS6235514A - 分子線結晶成長方法 - Google Patents

分子線結晶成長方法

Info

Publication number
JPS6235514A
JPS6235514A JP17478985A JP17478985A JPS6235514A JP S6235514 A JPS6235514 A JP S6235514A JP 17478985 A JP17478985 A JP 17478985A JP 17478985 A JP17478985 A JP 17478985A JP S6235514 A JPS6235514 A JP S6235514A
Authority
JP
Japan
Prior art keywords
substrate
crystal growth
molecular beam
gap
heating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17478985A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0319693B2 (enrdf_load_stackoverflow
Inventor
Shigeru Kuroda
黒田　滋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17478985A priority Critical patent/JPS6235514A/ja
Publication of JPS6235514A publication Critical patent/JPS6235514A/ja
Publication of JPH0319693B2 publication Critical patent/JPH0319693B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP17478985A 1985-08-08 1985-08-08 分子線結晶成長方法 Granted JPS6235514A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17478985A JPS6235514A (ja) 1985-08-08 1985-08-08 分子線結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17478985A JPS6235514A (ja) 1985-08-08 1985-08-08 分子線結晶成長方法

Publications (2)

Publication Number Publication Date
JPS6235514A true JPS6235514A (ja) 1987-02-16
JPH0319693B2 JPH0319693B2 (enrdf_load_stackoverflow) 1991-03-15

Family

ID=15984697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17478985A Granted JPS6235514A (ja) 1985-08-08 1985-08-08 分子線結晶成長方法

Country Status (1)

Country Link
JP (1) JPS6235514A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011526222A (ja) * 2008-07-03 2011-10-06 イーオーエス ゲゼルシャフト ミット ベシュレンクテル ハフツング イレクトロ オプティカル システムズ 三次元物体を一層ずつ製造する装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730320A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Substrate holder for molecular beam epitaxy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730320A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Substrate holder for molecular beam epitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011526222A (ja) * 2008-07-03 2011-10-06 イーオーエス ゲゼルシャフト ミット ベシュレンクテル ハフツング イレクトロ オプティカル システムズ 三次元物体を一層ずつ製造する装置

Also Published As

Publication number Publication date
JPH0319693B2 (enrdf_load_stackoverflow) 1991-03-15

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term