JPS6235191B2 - - Google Patents
Info
- Publication number
- JPS6235191B2 JPS6235191B2 JP54107195A JP10719579A JPS6235191B2 JP S6235191 B2 JPS6235191 B2 JP S6235191B2 JP 54107195 A JP54107195 A JP 54107195A JP 10719579 A JP10719579 A JP 10719579A JP S6235191 B2 JPS6235191 B2 JP S6235191B2
- Authority
- JP
- Japan
- Prior art keywords
- mos
- data lines
- memory
- data line
- memory cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 48
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000003068 static effect Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
Landscapes
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10719579A JPS5634184A (en) | 1979-08-24 | 1979-08-24 | Semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10719579A JPS5634184A (en) | 1979-08-24 | 1979-08-24 | Semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5634184A JPS5634184A (en) | 1981-04-06 |
JPS6235191B2 true JPS6235191B2 (de) | 1987-07-31 |
Family
ID=14452879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10719579A Granted JPS5634184A (en) | 1979-08-24 | 1979-08-24 | Semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5634184A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121688A (ja) * | 1982-12-28 | 1984-07-13 | Toshiba Corp | スタテイツクランダムアクセスメモリ− |
JPS60117490A (ja) * | 1983-11-29 | 1985-06-24 | Nec Ic Microcomput Syst Ltd | 半導体メモリ |
JPS61264590A (ja) * | 1985-05-17 | 1986-11-22 | Matsushita Electric Ind Co Ltd | 信号発生回路 |
JPS63144488A (ja) * | 1986-12-06 | 1988-06-16 | Fujitsu Ltd | 半導体記憶装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5116733A (de) * | 1974-08-01 | 1976-02-10 | Gewerk Eisenhuette Westfalia | |
JPS5329037A (en) * | 1976-08-30 | 1978-03-17 | Toshiba Corp | Mos random access memory |
-
1979
- 1979-08-24 JP JP10719579A patent/JPS5634184A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5116733A (de) * | 1974-08-01 | 1976-02-10 | Gewerk Eisenhuette Westfalia | |
JPS5329037A (en) * | 1976-08-30 | 1978-03-17 | Toshiba Corp | Mos random access memory |
Also Published As
Publication number | Publication date |
---|---|
JPS5634184A (en) | 1981-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4924439A (en) | Semiconductor integrated circuit | |
US5065363A (en) | Semiconductor storage device | |
US20010037429A1 (en) | Balanced switching method and circuit | |
US4760561A (en) | MOS static type RAM having a variable load | |
JP2876830B2 (ja) | 半導体記憶装置 | |
JPS6161198B2 (de) | ||
JPH0422318B2 (de) | ||
JPS61253695A (ja) | 半導体記憶装置 | |
US5020029A (en) | Static semiconductor memory device with predetermined threshold voltages | |
US5208773A (en) | Semiconductor memory device having bit lines and word lines different in data reading and data writing | |
JPH0361279B2 (de) | ||
JPH0512895A (ja) | 半導体記憶装置 | |
JP2604276B2 (ja) | 半導体記憶装置 | |
US3688264A (en) | Operation of field-effect transistor circuits having substantial distributed capacitance | |
US4433393A (en) | Semiconductor memory device | |
EP0259862A1 (de) | Halbleiterspeicher mit Schreibfunktion | |
KR0155986B1 (ko) | 반도체 기억장치 | |
US5719811A (en) | Semiconductor memory device | |
US4376987A (en) | Threshold referenced MNOS sense amplifier | |
US6314041B1 (en) | Memory with a reduced leakage current | |
JPS6235191B2 (de) | ||
KR950008672B1 (ko) | 입/출력 라인사이에서 전위차를 억제하기 위한 클램핑 회로를 구비한 반도체 메모리 장치 | |
US5541874A (en) | Semiconductor-integrated-circuit SRAM-cell array with single-ended current-sensing | |
US6552943B1 (en) | Sense amplifier for dynamic random access memory (“DRAM”) devices having enhanced read and write speed | |
JPS6299976A (ja) | 半導体記憶装置 |