JPS6233676B2 - - Google Patents

Info

Publication number
JPS6233676B2
JPS6233676B2 JP5792981A JP5792981A JPS6233676B2 JP S6233676 B2 JPS6233676 B2 JP S6233676B2 JP 5792981 A JP5792981 A JP 5792981A JP 5792981 A JP5792981 A JP 5792981A JP S6233676 B2 JPS6233676 B2 JP S6233676B2
Authority
JP
Japan
Prior art keywords
transistor
potential
equivalent
reference potential
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5792981A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57172592A (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP5792981A priority Critical patent/JPS57172592A/ja
Priority to GB8136789A priority patent/GB2089612B/en
Priority to US06/329,059 priority patent/US4467457A/en
Priority to DE19813148806 priority patent/DE3148806A1/de
Publication of JPS57172592A publication Critical patent/JPS57172592A/ja
Publication of JPS6233676B2 publication Critical patent/JPS6233676B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP5792981A 1980-12-12 1981-04-17 Nonvolatile semiconductor storage device Granted JPS57172592A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5792981A JPS57172592A (en) 1981-04-17 1981-04-17 Nonvolatile semiconductor storage device
GB8136789A GB2089612B (en) 1980-12-12 1981-12-07 Nonvolatile semiconductor memory device
US06/329,059 US4467457A (en) 1980-12-12 1981-12-09 Nonvolatile semiconductor memory device
DE19813148806 DE3148806A1 (de) 1980-12-12 1981-12-10 Nicht-fluechtiger halbleiterspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5792981A JPS57172592A (en) 1981-04-17 1981-04-17 Nonvolatile semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57172592A JPS57172592A (en) 1982-10-23
JPS6233676B2 true JPS6233676B2 (enrdf_load_stackoverflow) 1987-07-22

Family

ID=13069694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5792981A Granted JPS57172592A (en) 1980-12-12 1981-04-17 Nonvolatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57172592A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998394A (ja) * 1982-11-26 1984-06-06 Hitachi Ltd 半導体記憶装置
US4899308A (en) * 1986-12-11 1990-02-06 Fairchild Semiconductor Corporation High density ROM in a CMOS gate array
JP2560542B2 (ja) * 1993-03-30 1996-12-04 日本電気株式会社 電圧電流変換回路

Also Published As

Publication number Publication date
JPS57172592A (en) 1982-10-23

Similar Documents

Publication Publication Date Title
US5276646A (en) High voltage generating circuit for a semiconductor memory circuit
US6667904B2 (en) Multi-level non-volatile semiconductor memory device with verify voltages having a smart temperature coefficient
KR950003346B1 (ko) 불휘발성 반도체 기억 장치
US4802138A (en) Sense amplifier circuit for semiconductor memory
US4970691A (en) 2-cell/1-bit type EPROM
US4893275A (en) High voltage switching circuit in a nonvolatile memory
US4866307A (en) Integrated programmable bit circuit using single-level poly construction
US6233189B1 (en) Semiconductor memory device
JPS62164300A (ja) 電気的に消去可能なプログラム可能な半導体メモリ・セル
US5198997A (en) Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier
US4494219A (en) Nonvolatile read only memory device
US5396115A (en) Current-sensing power-on reset circuit for integrated circuits
JPH0777079B2 (ja) 不揮発性半導体記憶装置
US5293345A (en) Semiconductor memory device having a data detection circuit with two reference potentials
US5305275A (en) Semiconductor memory device capable of correct reading of data under variable supply voltage
EP0329141A1 (en) Sense circuit incorporated in semiconductor memory device
KR910009352B1 (ko) 기준셋팅회로
US5293344A (en) Write circuit for non-volatile memory device
JPS6233676B2 (enrdf_load_stackoverflow)
JPS6120958B2 (enrdf_load_stackoverflow)
JPH0519240B2 (enrdf_load_stackoverflow)
JPS6412039B2 (enrdf_load_stackoverflow)
EP0405220B1 (en) Semiconductor memory device
JPS6145319B2 (enrdf_load_stackoverflow)
JPH05174592A (ja) 不揮発性メモリー