JPS6231817B2 - - Google Patents

Info

Publication number
JPS6231817B2
JPS6231817B2 JP20137082A JP20137082A JPS6231817B2 JP S6231817 B2 JPS6231817 B2 JP S6231817B2 JP 20137082 A JP20137082 A JP 20137082A JP 20137082 A JP20137082 A JP 20137082A JP S6231817 B2 JPS6231817 B2 JP S6231817B2
Authority
JP
Japan
Prior art keywords
substrate
annular
duct
exhaust duct
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP20137082A
Other languages
Japanese (ja)
Other versions
JPS5990928A (en
Inventor
Masaru Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP20137082A priority Critical patent/JPS5990928A/en
Publication of JPS5990928A publication Critical patent/JPS5990928A/en
Publication of JPS6231817B2 publication Critical patent/JPS6231817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 この発明は半導体基板、ガラス、セラミツクな
どの基板を回転させながら、その表面にたとえば
ホトレジスト液、現像液またはエツチング液など
を前記基板の上方に設けたノズルから供給するこ
とにより、ホトレジスト剤の塗布、現像またはエ
ツチングなどの表面処理を前記基板に対して行う
回転式表面処理装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention involves supplying, for example, a photoresist solution, a developer solution, or an etching solution to the surface of a substrate such as a semiconductor substrate, glass, or ceramic from a nozzle provided above the substrate while rotating the substrate. The present invention relates to a rotary surface treatment apparatus that performs surface treatments such as applying a photoresist agent, developing, or etching the substrate.

たとえば半導体基板の表面にホトレジスト剤を
塗布する装置の1例として第1図に示した装置が
従来用いられている。第1図はこの従来装置の要
部を示した側断面図である。この従来の装置にお
いては、ノズル10より供給されたホトレジスト
液が、真空チヤツク11に芯を合せて吸着され、
回転させられる被処理基板12の表面の中央部に
滴下されると、滴下されたレジスト液は回転して
いる前記基板12から付与される遠心力によつて
その中央部から周縁部へ向つて移動させられ、前
記基板12の表面にホトレジスト剤の塗布膜が形
成されるが、その際に余剰液すなわち廃液は前記
基板12の端部から接線方向に飛沫となつて飛散
し、さらにこの廃液飛沫は、傾斜板13の裏面に
衝突し、そらされる際に微細化されて霧状とな
り、この霧状になつた廃液が、排気ダクト14か
ら強制排気がなされる環状ダクト15に向つてカ
バー16中央の抜き穴17から持ちこまれ、放射
状に流動させられる気流にのせられて外部に排出
されるようになつている。そして前記基板12が
高速回転させられることによつて負圧とされるそ
の表面および裏面に、残留霧状廃液が引寄せられ
て付着するのを防止するために、前記した外向き
放射状の気流が前記基板12のまわりにできるだ
け均一に生ずるように排気ダクト14に比し十分
な容量をもつ環状ダクト15が被処理基板12の
収容容器の外周部に設けられているとともに、真
空チヤツク11の回転軸のまわりに設けられた環
状導入路から矢印で示すようにN2ガスなどの不
活性ガスが前記基板12の裏面に向つて放射状に
吹き付けられ、前記した放射状の気流と合流して
環状ダクト15に流出してゆくようにされてい
る。この場合、粒状のまま傾斜板13から落下し
たり、霧状とされた廃液が傾斜板13や環状ダク
ト15に付着し、滴状に成長してから落下したり
する廃液は底部にためられて、ドレン管18から
外部へ排出されるようになつている。
For example, the apparatus shown in FIG. 1 has been conventionally used as an example of an apparatus for applying a photoresist agent to the surface of a semiconductor substrate. FIG. 1 is a side sectional view showing the main parts of this conventional device. In this conventional apparatus, the photoresist liquid supplied from the nozzle 10 is adsorbed by aligning the center with the vacuum chuck 11.
When the resist solution is dropped onto the center of the surface of the rotating substrate 12 to be processed, the dropped resist solution moves from the center toward the periphery due to the centrifugal force applied from the rotating substrate 12. A coating film of photoresist agent is formed on the surface of the substrate 12, but at this time, the surplus liquid, that is, the waste liquid is scattered as droplets in the tangential direction from the edge of the substrate 12, and furthermore, this waste liquid splash is , collides with the back surface of the inclined plate 13 and is atomized when deflected, becoming atomized, and this atomized waste liquid flows toward the annular duct 15 from the exhaust duct 14 to the annular duct 15 where forced exhaust is performed. It is brought in through the extraction hole 17 and discharged to the outside on a radially flowing air current. In order to prevent residual atomized waste liquid from being attracted and attached to the front and back surfaces of the substrate 12, which are subjected to negative pressure by being rotated at high speed, the outward radial airflow is An annular duct 15 having a sufficient capacity compared to the exhaust duct 14 is provided on the outer periphery of the storage container for the substrate 12 to be processed so as to be formed as uniformly as possible around the substrate 12. An inert gas such as N 2 gas is radially blown toward the back surface of the substrate 12 as shown by the arrow from an annular introduction path provided around the substrate 12 , merges with the radial airflow, and flows into the annular duct 15 . It is made to flow out. In this case, the waste liquid that falls from the inclined plate 13 in granular form, or the waste liquid that has become atomized and adheres to the inclined plate 13 or the annular duct 15, grows into droplets and then falls, is accumulated at the bottom. , and are discharged from the drain pipe 18 to the outside.

このように従来の装置においては、放射状空気
流を回転させられる被処理基板12のまわりにで
きるだけ均一に生じるようにするために、排気ダ
クト14に対して十分な容量をもつ環状ダクト1
5を被処理基板12の収容容器の外周部に設け、
さらに被処理基板12からの廃液飛沫を確実に外
向きに斜め下方へそれせるようにするために、傾
斜板13の傾斜を30゜程度にゆるやかにとり、か
つその環状ダクト15までの長さ、すなわち傾斜
板の外径寸法が大きくとられているのであるが、
このような構造がとられているために小形化が困
難である。
In this way, in conventional apparatuses, an annular duct 1 with sufficient capacity for the exhaust duct 14 is used in order to generate a radial air flow as uniformly as possible around the rotated substrate 12 to be processed.
5 is provided on the outer periphery of the storage container for the substrate to be processed 12,
Furthermore, in order to ensure that the waste liquid droplets from the substrate 12 to be processed are diverted outward and diagonally downward, the slope of the slope plate 13 is set at a gentle slope of about 30 degrees, and the length up to the annular duct 15, i.e. Although the outer diameter of the inclined plate is set large,
Due to this structure, it is difficult to downsize the device.

ところで、被処理基板12たとえばシリコンウ
エハ、従来直径が、3″もしくは4″程度の円板状
であつたものが、5″直径のものも用いられるよ
うになる一方、前記した各種の処理を行う処理
室、すなわちクリーンルームの雰囲気の無塵化に
対しては、製品性能をより一層高めるためにます
ますシビヤな要求がなされるようになり、クリー
ンルームのランニングコストが著しく上昇する現
状にある。したがつてこのような現状において、
製品性能の向上をはかりながら生産性を向上させ
るために、コンパクトなクリーンルームにマツチ
した小型回転式表面処理装置の提供が要望されて
いる。
By the way, the substrate to be processed 12, for example, a silicon wafer, has conventionally been in the shape of a disk with a diameter of about 3" or 4", but now a substrate with a diameter of 5" is also used, and it is also used to perform the various treatments described above. In order to further improve product performance, stricter demands are being made to make the atmosphere in processing rooms, or clean rooms, dust-free, and the running costs of clean rooms are increasing significantly. In this current situation,
In order to improve productivity while improving product performance, there is a demand for a small rotary surface treatment device that is compatible with compact clean rooms.

この発明は、前記要望に応え、従来の回転式表
面処理装置が前記したように大きくなり、小形化
が難しいというその有する欠点を解消し、小形化
した装置を提供することを目的としてなされたも
のであつて、わん状容器と、この中央上方に設け
たノズルと、この容器内中央にて回転する真空チ
ヤツクとを備え、このチヤツクに吸着させた被処
理基板を回転させながらその表面に前記ノズルか
ら処理液を供給してその表面処理を行う回転式表
面処理装置において、前記わん状容器を、上面に
抜き穴、それに接続するゆるやかな傾斜面部を有
し、前記被処理基板の回転軸線に対して回転対称
形に成形された上蓋と、前記チヤツクを囲み、排
気ダクトおよびドレン管路を備えた環状底部とか
ら形成し、前記基板の回転半径とほぼ同等の外周
半径をもつ環状受皿とそれに続く傾斜面縁部とを
備え、この傾斜面縁部の外周端が前記基板の回転
中心に対する偏心円周上に位置する整流板を前記
環状底部の内周部に取付け、前記上蓋の下部、前
記環状底部および前記整流板によつて環状ダクト
を形成してなり、この環状ダクト内の空気を前記
排気ダクトから強制排気する際に前記基板近傍の
上下空間に生ずる外向き放射状気流を、前記上蓋
および前記整流板のそれぞれ傾斜面端部間に形成
され、前記排気ダクトに接近するにしたがつて狭
くされる間隙を通過せしめるようにしてなる回転
式表面処理装置にかかるものである。
The present invention has been made in response to the above-mentioned demand, with the purpose of solving the drawbacks of the conventional rotary surface treatment apparatus, which are large and difficult to miniaturize, and providing a compact apparatus. The device is equipped with a bowl-shaped container, a nozzle provided above the center of the container, and a vacuum chuck that rotates in the center of the container, and the nozzle is applied to the surface of the substrate while rotating the substrate adsorbed to the chuck. In a rotary surface treatment apparatus that performs surface treatment by supplying a treatment liquid from the substrate, the bowl-shaped container has a hole in the upper surface and a gently sloped surface connected to the hole, and an annular bottom portion surrounding the chuck and provided with an exhaust duct and a drain conduit, and an annular saucer having an outer circumferential radius approximately equal to the rotation radius of the substrate; A rectifying plate is attached to the inner circumferential portion of the annular bottom portion, and the outer peripheral end of the inclined surface edge portion is located on an eccentric circumference with respect to the rotation center of the substrate, and An annular duct is formed by the bottom part and the rectifier plate, and when the air in the annular duct is forcibly exhausted from the exhaust duct, the outward radial airflow generated in the vertical space near the substrate is directed to the upper cover and the rectifying plate. The present invention relates to a rotary surface treatment device in which the airflow is allowed to pass through a gap that is formed between the end portions of the inclined surfaces of the current plates and narrows as it approaches the exhaust duct.

以下、この発明にかかる実施例装置について図
面を参照しながら詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings.

第2図は、この装置の要部の側断面図であり第
3図は、その被処理基板の下面にそつた―断
面を矢印方向から上蓋を取除いて示した平面図で
ある。
FIG. 2 is a side sectional view of the main parts of this apparatus, and FIG. 3 is a plan view showing a cross section taken along the lower surface of the substrate to be processed in the direction of the arrow with the top cover removed.

真空チヤツク11に同心に吸着されて回転させ
られる被処理基板12を収容する容器20は、前
記基板12より若干大きい抜穴21、それに続く
ゆるやかな傾斜面部および曲面部をもつ上蓋22
を、断面形状が逆三角形状をした環状底部23,
23′にはめあわせて形成されている。環状底部
23,23′は、その外周部は上方に折り曲げら
れて上蓋22との係合部をなし、その内周部は同
様に折り曲げられて真空チヤツク11のまわりの
案内外筒部24をなしている。案内外筒部24に
は、真空チヤツク11の回転軸を同心に内蔵する
外套管25と、それに接続され、真空チヤツク1
1を囲む案内内筒部26とが収められており、さ
らにその外周にゆるやかな傾斜面の外縁部27′
と前記基板12の外径より若干小さな環状の受皿
27″とからなる整流板27がはめこまれてい
る。
The container 20 that houses the substrate 12 to be processed, which is concentrically attracted to the vacuum chuck 11 and rotated, has a hole 21 that is slightly larger than the substrate 12, and an upper lid 22 that has a gently sloped surface portion and a curved surface portion that follow the hole 21.
An annular bottom portion 23 having an inverted triangular cross-sectional shape,
23'. The annular bottom portions 23, 23' have their outer circumferential portions bent upward to form an engaging portion with the upper lid 22, and their inner circumferential portions similarly bent to form a guiding outer cylindrical portion 24 around the vacuum chuck 11. ing. The guide outer cylinder part 24 includes an outer tube 25 that concentrically houses the rotating shaft of the vacuum chuck 11, and is connected to the outer tube 25 that concentrically houses the rotation axis of the vacuum chuck 11.
1, and an outer edge portion 27' with a gently sloped surface on its outer periphery.
A rectifying plate 27 consisting of a ring-shaped receiving plate 27'' whose outer diameter is slightly smaller than the outer diameter of the substrate 12 is fitted therein.

整流板27は、第3図に示されているように、
前記受皿27″は真空チヤツク11の回転中心O
と同心に形成されているが、前記傾斜面縁部2
7′の外周端は、前記回転中心Oから直径D―D
上において右方にeだけ偏心させたO′を中心と
する半径Rの円周をなしている。この整流板27
が収められる上蓋22は、前記回転中心Oをとお
る軸線に対して回転対称形に成形されているか
ら、第2、第3両図に示すように傾斜面縁部2
7′の外周端と上蓋22の内壁面との水平面内に
おける隔り(間隙)は、直径D―Dの左側におい
て最大B、右側において最小B′となり、このBと
B′とは、B−B′=2eの関係にあり、その中間にあ
つては第3図にみられるとおり上半分では時計方
向まわりに、下半分では反時計方向まわりにいず
れも次第に減ずるようにされている。
The current plate 27, as shown in FIG.
The saucer 27'' is located at the rotation center O of the vacuum chuck 11.
Although it is formed concentrically with the inclined surface edge 2
The outer peripheral end of 7' has a diameter D-D from the rotation center O.
It forms a circumference of radius R centered at O', which is eccentrically e to the right in the upper view. This current plate 27
Since the upper lid 22 in which the is housed is formed rotationally symmetrically with respect to the axis passing through the rotation center O, the inclined surface edge 2
The distance (gap) in the horizontal plane between the outer circumferential end of 7' and the inner wall surface of the upper lid 22 is maximum B on the left side of diameter D-D and minimum B' on the right side, and this B and
B' has a relationship of B - B' = 2e, and in the middle, as shown in Figure 3, it gradually decreases clockwise in the upper half and counterclockwise in the lower half. It is being done.

このことは整流板27の傾斜面縁部27′にお
いては、その長さが前記した間隙とは逆に次第に
増すようにされていることである。実施例では前
記傾斜面縁部27′の傾斜角度は図示のとおり左
側では最大(たとえばα=20゜)に、その右側で
は最小(たとえばα′=15゜)となり、整流板2
7の傾斜面縁部27′の前記した最大傾斜角度に
上蓋22の傾斜面部の傾斜角度がほぼ一致するよ
うにされている。なお整流板27の傾斜角度はこ
うした角度にはそれほどこだわる必要はなく第2
図の左右同一であつてもよい。
This means that the length of the inclined surface edge 27' of the current plate 27 gradually increases, contrary to the above-mentioned gap. In the embodiment, the inclination angle of the inclined surface edge 27' is maximum (for example, α = 20 degrees) on the left side and minimum (for example, α' = 15 degrees) on the right side, as shown in the figure,
The angle of inclination of the inclined surface portion of the upper lid 22 is made to approximately match the maximum inclination angle of the inclined surface edge portion 27' of No. 7. Note that there is no need to be so particular about the inclination angle of the current plate 27;
The left and right sides of the figure may be the same.

環状底部23,23′は、底部23が最も浅
く、底部23′が最も深くなるように環状に形成
されていて、図示のように底部23′に排気ダク
ト14が若干突出させて設けられ、この排気ダク
ト14から中心Oに対してたとえば45゜程度ずら
した底部にドレン管18が面一に設けられてい
る。
The annular bottom parts 23, 23' are formed in an annular shape such that the bottom part 23 is the shallowest and the bottom part 23' is the deepest.As shown in the figure, the exhaust duct 14 is provided to slightly protrude from the bottom part 23'. A drain pipe 18 is provided flush with the bottom part of the exhaust duct 14, which is offset from the center O by, for example, about 45 degrees.

従来の装置においては被処理基板12の収容容
器の外周部に環状ダクト15が設けられていたの
であるが、それに相当する部分がこの実施例装置
においては、上蓋22の下部、整流板27および
底部23,23′から構成されており、被処理基
板12の収容容器20内に環状ダクト15がとり
こまれていることから、たとえば外径が5″の被
処理基板12がそれぞれセツトされる従来の装置
とこの装置とを比較すれば、ほぼ従来の装置の環
状ダクト15の部分だけこの装置が小さくされて
いることになる。
In the conventional apparatus, the annular duct 15 was provided at the outer periphery of the storage container for the substrate 12 to be processed, but in this embodiment apparatus, the annular duct 15 was provided at the lower part of the upper lid 22, the rectifying plate 27, and the bottom part. 23 and 23', and the annular duct 15 is incorporated into the storage container 20 for the substrates to be processed 12, so that the conventional apparatus in which the substrates to be processed 12 each having an outer diameter of 5'', for example, are set. Comparing this device with the conventional device, this device is made smaller by approximately the size of the annular duct 15 of the conventional device.

なお上蓋22には、抜き穴17を有するカバー
16が着脱自在に取付けられている。
A cover 16 having a hole 17 is detachably attached to the upper lid 22.

つぎにこの装置における動作について半導体基
板にホトレジスト剤を塗布する場合を例にあげて
説明する。
Next, the operation of this apparatus will be explained using an example in which a photoresist agent is applied to a semiconductor substrate.

まず、真空チヤツク11に前記基板12を、中
心を一致させて吸着させ、高速回転させるととも
に、排気ダクト14から強制排気を行う。ついで
前記基板12の表面の中央部にノズル10からホ
トレジスト液を滴下させると、この滴下されたホ
トレジスト液は、高速回転している前記基板12
によつて遠心力が付与されるため、前記基板12
の中央部からその周縁部へ向つて移動し、この基
板12の表面にホトレジスト剤の塗布膜が形成さ
れる。そしてその際に余剰液すなわち廃液は前記
基板12の端部から接線方向に飛沫となつて飛散
する。この廃液飛沫はすべて上蓋22の傾斜面部
の裏面に衝突し、外向き斜め下方向にそらされ、
一部はさらに整流板27の傾斜面縁部27′に衝
突し、微細化され、霧状になる。
First, the substrate 12 is attracted to the vacuum chuck 11 with its centers aligned, rotated at high speed, and forcedly evacuated from the exhaust duct 14. Next, when a photoresist liquid is dropped from the nozzle 10 onto the center of the surface of the substrate 12, the dropped photoresist liquid is applied to the substrate 12 which is rotating at high speed.
Since centrifugal force is applied by
A coating film of the photoresist agent is formed on the surface of the substrate 12 by moving from the center toward the periphery thereof. At this time, the excess liquid, that is, the waste liquid, scatters in the form of droplets in the tangential direction from the edge of the substrate 12. All of this waste liquid splash collides with the back surface of the inclined surface portion of the upper lid 22, and is deflected outward and diagonally downward.
A portion further collides with the inclined surface edge 27' of the current plate 27, and becomes fine and atomized.

前記したとおり、排気ダクト14から強制排気
がなされているため、カバー16の抜き穴17、
ついで上蓋22の抜き穴21から収容容器20内
に持ちこまれた外気は、上蓋22の傾斜面部と整
流板27の傾斜面縁部27′との間に形成される
隙間をとおる外向きの放射状気流となつて環状ダ
クト15に流入し、環状ダクト内を第3図の上半
部において時計方向および第3図の下半部におい
て反時計方向に流動し、排気ダクト14から外部
へ排出される。
As mentioned above, since forced exhaust is provided from the exhaust duct 14, the hole 17 in the cover 16,
Next, the outside air brought into the storage container 20 through the hole 21 of the upper lid 22 is an outward radial airflow that passes through the gap formed between the sloped surface portion of the upper lid 22 and the sloped surface edge 27' of the rectifying plate 27. The gas flows into the annular duct 15, flows clockwise within the annular duct in the upper half of FIG. 3 and counterclockwise in the lower half of FIG. 3, and is discharged to the outside from the exhaust duct 14.

この場合、前記放射状気流が環状ダクト15に
流入するに際して通過する上蓋22の傾斜面部と
整流板27の傾斜面縁部27′との間に形成され
る隙間流路は、前記したとおり排気ダクト14に
接近するにしたがつてその環状ダクト15の開口
幅が次第に狭められることによつて絞られている
ことから、排気ダクト14の吸引力が強く作用す
るそれに近い隙間流路ほど流れ抵抗が大きく、圧
力損失がますこととなり、前記した回転させられ
る被処理基板12のまわりに生ずる外向きの放射
状気流の均一性が保持される。そしてこの均一性
は、環状ダクト15の断面積が排気ダクト14に
近付く程大きくされていることによつてさらに良
好に保たれる。
In this case, the gap flow path formed between the sloped surface portion of the upper lid 22 and the sloped surface edge 27' of the baffle plate 27, through which the radial airflow passes when flowing into the annular duct 15, is connected to the exhaust duct 14 as described above. Since the opening width of the annular duct 15 is gradually narrowed as it approaches the exhaust duct 14, the closer the suction force of the exhaust duct 14 acts, the greater the flow resistance. Pressure loss is reduced, and the uniformity of the outward radial airflow generated around the rotated substrate 12 to be processed is maintained. This uniformity is further maintained by increasing the cross-sectional area of the annular duct 15 closer to the exhaust duct 14.

このように前記基板12の外周部の上、下空間
には、外向きの放射状気流が回転する前記基板1
2のまわりに均一に形成されるので、霧状にされ
た前記廃液は取り残されることなく前記気流にの
せられて環状ダクト15をへて排気とともに排気
ダクト14から外部へ排出される。
In this way, in the space above and below the outer periphery of the substrate 12, an outward radial airflow is formed on the rotating substrate 1.
2, the atomized waste liquid is carried by the airflow without being left behind, passes through the annular duct 15, and is discharged to the outside from the exhaust duct 14 along with the exhaust.

このように霧状となつた廃液は前記放射状気流
にのせられて前記基板12の近傍の上、下空間か
ら排除されることから、霧状廃液の一部が高速回
転により負圧となる前記基板12の表面および裏
面に引き寄せられ付着する現象は抑止される。と
くに前記基板12の裏面に対しては、予め外套管
25および案内内筒部26から不活性ガスたとえ
ばN2ガスを放射状に吹き付け、前記した放射状
の空気流と合流させて環状ダクト15に流出させ
ることによつて霧状廃液の付着を徹底して排除す
るようにされている。
Since the atomized waste liquid is carried by the radial airflow and removed from the upper and lower spaces near the substrate 12, a portion of the atomized waste liquid becomes negative pressure due to the high speed rotation of the substrate 12. The phenomenon of attracting and adhering to the front and back surfaces of 12 is suppressed. In particular, an inert gas such as N 2 gas is radially blown onto the back surface of the substrate 12 from the outer tube 25 and the guide inner cylindrical portion 26 in advance to merge with the radial air flow and flow out into the annular duct 15. In particular, adhesion of atomized waste liquid is thoroughly eliminated.

霧状廃液の一部は上蓋22、整流板27のそれ
ぞれ傾斜面部や環状ダクト15の内壁面に付着す
るが、この付着廃液は液滴に成長し、環状ダクト
15の一部をなす底部23の環状谷底に流下し、
環状底部23′側へ集まるが、排気ダクト14が
若干谷底より突出させてあるので、集まつた廃液
はすべてドレン管18から外部へ排出される。
A part of the mist of waste liquid adheres to the inclined surfaces of the upper lid 22 and the rectifying plate 27 and the inner wall surface of the annular duct 15, but this adhering waste liquid grows into droplets and is deposited on the bottom part 23, which forms part of the annular duct 15. Flowing down to the annular valley floor,
The waste liquid collects on the annular bottom 23' side, but since the exhaust duct 14 is slightly protruded from the bottom of the valley, all the collected waste liquid is discharged to the outside from the drain pipe 18.

被処理基板12の直径が4″,3″と小さいもの
を処理する場合には、整流板27を被処理基板1
2の大きさに適合させたものを用意しておき、そ
れぞれ案内外筒部24にはめかえるようにしてお
けばよい。とくに直径が3″の被処理基板12を
処理する場合にはそれに適合した上蓋22を環状
底部23,23′の前記係合部にはめかえること
が望ましい。
When processing a small substrate 12 with a diameter of 4'' or 3'', the rectifying plate 27 is placed on the substrate 1 to be processed.
What is necessary is to prepare one adapted to the size of 2 and to fit it into the guide outer cylindrical part 24 respectively. Particularly when processing a substrate 12 having a diameter of 3'', it is desirable to fit the upper lid 22 into the engaging portions of the annular bottom portions 23, 23'.

また被処理基板12が角形の場合には、その対
角線長さを円形基板の直径と同等にみなして取り
扱えばよい。
Further, when the substrate 12 to be processed is square, the length of the diagonal line may be treated as being equivalent to the diameter of a circular substrate.

以上の説明によつて明らかなように、この発明
にかかる回転式表面処理装置においては、回転中
にその表面に処理液が供給され、表面処理がなさ
れる被処理基板が内部にセツトされる収容容器の
内部に環状ダクトをとりこむように設けられてい
ることから、従来の前記収容容器の外周部に環状
ダクトが設けられていたものに比してその大きさ
を小形にすることができる。そしてこのように収
容容器に取りこんだ環状ダクトに外向きに放射状
に流入する気流の通過間隙を、上蓋およびそれに
対して外縁傾斜面部の外周端が偏心させてある整
流板のそれぞれ傾斜面端部間に形成し、この間隙
が排気ダクト14に接近するにしたがつて狭くな
るようにされていることから、排気ダクトの吸引
力が強く作用するそれに近い隙間流路ほど流れ抵
抗が大きく、圧力損失がますこととなり、回転さ
せられる被処理基板の外周部の上、下空間には、
外向きの放射状気流が前記基板のまわりに均一に
形成されるので、霧状にされた廃液を取り残すこ
となく前記気流にのせ、環状ダクトをへて排気と
ともに排気ダクトから外部へ排出することができ
る。
As is clear from the above description, in the rotary surface treatment apparatus according to the present invention, a treatment liquid is supplied to the surface of the rotary surface treatment apparatus during rotation, and the substrate to be surface treated is set inside the housing. Since the annular duct is installed inside the container, it can be made smaller in size than the conventional container in which the annular duct is provided on the outer periphery. Then, the passage gap for the airflow flowing radially outward into the annular duct taken into the storage container is created between the upper cover and the edges of the sloped surfaces of the rectifying plate, whose outer peripheral edge is eccentric with respect to the upper cover. Since this gap narrows as it approaches the exhaust duct 14, the closer the suction force of the exhaust duct acts, the greater the flow resistance and the lower the pressure loss. Therefore, in the space above and below the outer periphery of the substrate being rotated,
Since an outward radial airflow is uniformly formed around the substrate, the atomized waste liquid can be carried on the airflow without being left behind, pass through the annular duct, and be discharged to the outside from the exhaust duct along with the exhaust air. .

なお前記説明において排気ダクトは1個で述べ
たが、2個およびそれ以上となつても同じように
排気ダクト部が一番狭く排気ダクトと排気ダクト
との中間が間隔が広くなるようにすればよい。
In the above explanation, the number of exhaust ducts is one, but even if there are two or more exhaust ducts, if the exhaust duct part is the narrowest and the space between the two exhaust ducts is wide. good.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の回転式表面処理装置の側断面
図、第2図はこの発明にかかる実施例装置の側断
面図、第3図はその被処理基板の下面にそつた
―断面を矢印方向から上蓋を取除いて示した平
面図である。 10……ノズル、11……真空チヤツク、12
……被処理基板、14……排気ダクト、15……
環状ダクト、18……ドレン管、20……わん状
容器、21……抜き穴、22……上蓋、23,2
3′……環状底部、27……整流板、27′……傾
斜面縁部、27″……環状受皿。
FIG. 1 is a side sectional view of a conventional rotary surface treatment apparatus, FIG. 2 is a side sectional view of an embodiment of the apparatus according to the present invention, and FIG. 3 is a cross section taken along the lower surface of the substrate to be treated in the direction of the arrow. FIG. 10... Nozzle, 11... Vacuum chuck, 12
...Substrate to be processed, 14...Exhaust duct, 15...
Annular duct, 18... Drain pipe, 20... Bowl-shaped container, 21... Extraction hole, 22... Top lid, 23, 2
3'... Annular bottom, 27... Rectifying plate, 27'... Inclined surface edge, 27''... Annular saucer.

Claims (1)

【特許請求の範囲】[Claims] 1 わん状容器と、この中央上方に設けたノズル
と、この容器内中央にて回転する真空チヤツクと
を備え、このチヤツクに吸着させた被処理基板を
回転させながらその表面に前記ノズルから処理液
を供給してその表面処理を行う回転式表面処理装
置において、前記わん状容器を、上面に抜き穴、
それに接する傾斜面部を有し前記処理基板の回転
軸線に対して回転対称形に成形された上蓋と、前
記チヤツクを囲み、排気ダクトを備えた環状底部
とから形成し、前記基板の回転半径とほぼ同等の
外周半径をもつ環状受皿とそれに続く傾斜面縁部
とを備え、この傾斜面縁部の外周端が前記基板の
回転中心に対する偏心円周上に位置する整流板を
前記環状底部の内周部に取付け、この整流板およ
び前記上蓋のそれぞれ傾斜面端部間を、前記排気
ダクトの円周角度配設位置に近付くにしたがつて
狭くされる間隙に形成するとともに、前記上蓋の
下部、前記環状底部および前記整流板によつて前
記間隙に接続する環状ダクトを形成してなること
を特徴とする回転式表面処理装置。
1.Equipped with a bowl-shaped container, a nozzle provided above the center, and a vacuum chuck rotating in the center of the container, the processing liquid is applied to the surface of the substrate from the nozzle while rotating the substrate adsorbed to the chuck. In a rotary surface treatment device that supplies and performs surface treatment, the bowl-shaped container is provided with a hole in the top surface,
The upper lid has an inclined surface in contact with the upper lid and is formed rotationally symmetrically with respect to the rotational axis of the processing substrate, and an annular bottom that surrounds the chuck and is provided with an exhaust duct, and is approximately equal to the rotational radius of the substrate. A rectifying plate comprising an annular saucer having the same outer radius and an inclined surface edge following the same, the outer peripheral end of the inclined surface edge being located on an eccentric circumference with respect to the rotation center of the substrate, is connected to the inner periphery of the annular bottom. A gap is formed between the sloped end portions of the rectifier plate and the upper cover, and the gap narrows as it approaches the circumferential angular arrangement position of the exhaust duct, and the lower part of the upper cover, A rotary surface treatment apparatus characterized in that an annular duct connected to the gap is formed by an annular bottom portion and the current plate.
JP20137082A 1982-11-16 1982-11-16 Rotary type surface treatment apparatus Granted JPS5990928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20137082A JPS5990928A (en) 1982-11-16 1982-11-16 Rotary type surface treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20137082A JPS5990928A (en) 1982-11-16 1982-11-16 Rotary type surface treatment apparatus

Publications (2)

Publication Number Publication Date
JPS5990928A JPS5990928A (en) 1984-05-25
JPS6231817B2 true JPS6231817B2 (en) 1987-07-10

Family

ID=16439933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20137082A Granted JPS5990928A (en) 1982-11-16 1982-11-16 Rotary type surface treatment apparatus

Country Status (1)

Country Link
JP (1) JPS5990928A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04312721A (en) * 1991-03-11 1992-11-04 John Fluke Mfg Co Inc Key pad assembly body and equipment using it

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JPH0441976Y2 (en) * 1985-10-07 1992-10-02
JPH0444216Y2 (en) * 1985-10-07 1992-10-19
JPS6369564A (en) * 1986-09-10 1988-03-29 Dainippon Screen Mfg Co Ltd Spin coater for substrate
JPS6377569A (en) * 1986-09-19 1988-04-07 Dainippon Screen Mfg Co Ltd Rotary type surface treatment device for substrate
JPH0628223Y2 (en) * 1989-06-14 1994-08-03 大日本スクリーン製造株式会社 Spin coating device
JP2576914B2 (en) * 1990-10-17 1997-01-29 オリジン電気株式会社 Spinner device
US5395649A (en) * 1992-02-04 1995-03-07 Sony Corporation Spin coating apparatus for film formation over substrate
DE102004019731A1 (en) * 2004-04-20 2005-11-10 Sse Sister Semiconductor Equipment Gmbh Device for the rotary coating of substrates
CN102671832B (en) * 2011-04-08 2015-04-15 京东方科技集团股份有限公司 Spin coating device
JP5909218B2 (en) * 2013-09-13 2016-04-26 東京エレクトロン株式会社 Substrate liquid processing equipment
JP6824773B2 (en) * 2017-02-20 2021-02-03 株式会社Screenホールディングス Substrate processing equipment and substrate processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04312721A (en) * 1991-03-11 1992-11-04 John Fluke Mfg Co Inc Key pad assembly body and equipment using it

Also Published As

Publication number Publication date
JPS5990928A (en) 1984-05-25

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