JPS6231504B2 - - Google Patents

Info

Publication number
JPS6231504B2
JPS6231504B2 JP54092583A JP9258379A JPS6231504B2 JP S6231504 B2 JPS6231504 B2 JP S6231504B2 JP 54092583 A JP54092583 A JP 54092583A JP 9258379 A JP9258379 A JP 9258379A JP S6231504 B2 JPS6231504 B2 JP S6231504B2
Authority
JP
Japan
Prior art keywords
carriers
light
silicon substrate
image sensor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54092583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5618475A (en
Inventor
Koichi Sekine
Katsuhiko Morimune
Masaharu Watanabe
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP9258379A priority Critical patent/JPS5618475A/ja
Priority to EP80104254A priority patent/EP0023656B1/en
Priority to DE8080104254T priority patent/DE3067750D1/de
Publication of JPS5618475A publication Critical patent/JPS5618475A/ja
Priority to US06/551,001 priority patent/US4649408A/en
Publication of JPS6231504B2 publication Critical patent/JPS6231504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP9258379A 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof Granted JPS5618475A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9258379A JPS5618475A (en) 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof
EP80104254A EP0023656B1 (en) 1979-07-23 1980-07-18 Charge storage type semiconductor device
DE8080104254T DE3067750D1 (en) 1979-07-23 1980-07-18 Charge storage type semiconductor device
US06/551,001 US4649408A (en) 1979-07-23 1983-11-15 Charge storage type semiconductor device and method for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9258379A JPS5618475A (en) 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5618475A JPS5618475A (en) 1981-02-21
JPS6231504B2 true JPS6231504B2 (forum.php) 1987-07-08

Family

ID=14058449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9258379A Granted JPS5618475A (en) 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5618475A (forum.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5665577A (en) * 1979-11-01 1981-06-03 Nec Corp Solidstate image sensor
JP2724702B2 (ja) * 1985-06-21 1998-03-09 日本テキサス・インスツルメンツ 株式会社 電荷結合型半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128972A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Solid state pickup device

Also Published As

Publication number Publication date
JPS5618475A (en) 1981-02-21

Similar Documents

Publication Publication Date Title
US4686554A (en) Photoelectric converter
KR100983767B1 (ko) 이미저의 스퓨리어스 전하로부터 교정 픽셀을 차폐하는 방법 및 장치
US5476808A (en) Method of making CCD solid state image sensing device
GB1595253A (en) Solid-state imaging devices
US5043783A (en) Solid state image sensor
JPH0318793B2 (forum.php)
US4649408A (en) Charge storage type semiconductor device and method for producing same
US4651015A (en) Semiconductor imaging device utilizing static induction transistors
US4504848A (en) Solid state image sensor with over-flow control
JPH0831988B2 (ja) 固体撮像デバイス
JPS6231504B2 (forum.php)
US4725873A (en) Semiconductor imaging device
JP3285928B2 (ja) 固体撮像装置
JPH05175471A (ja) 固体撮像装置
JP3326798B2 (ja) 固体撮像装置
JPS6134263B2 (forum.php)
US4057822A (en) Channel type photo-electric energy transducer
CA1149952A (en) Charge storage type semiconductor device and method for producing same
JP3303384B2 (ja) 固体撮像装置およびその駆動方法
JP2000059695A (ja) 固体撮像装置およびその駆動方法
JPS5846189B2 (ja) 固体撮像装置の製造方法
JPS62190870A (ja) 固体撮像装置およびその製造方法
JPS60102769A (ja) 固体撮像装置
JPS60167366A (ja) 固体撮像装置の製造方法
JPS5917778A (ja) 固体撮像装置およびその製造方法