JPS5618475A - Charge storage type semiconductor device and manufacture thereof - Google Patents

Charge storage type semiconductor device and manufacture thereof

Info

Publication number
JPS5618475A
JPS5618475A JP9258379A JP9258379A JPS5618475A JP S5618475 A JPS5618475 A JP S5618475A JP 9258379 A JP9258379 A JP 9258379A JP 9258379 A JP9258379 A JP 9258379A JP S5618475 A JPS5618475 A JP S5618475A
Authority
JP
Japan
Prior art keywords
charge storage
semiconductor device
crystal defects
storage type
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9258379A
Other languages
Japanese (ja)
Other versions
JPS6231504B2 (en
Inventor
Koichi Sekine
Katsuhiko Morimune
Masaharu Watanabe
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9258379A priority Critical patent/JPS5618475A/en
Priority to EP80104254A priority patent/EP0023656B1/en
Priority to DE8080104254T priority patent/DE3067750D1/en
Publication of JPS5618475A publication Critical patent/JPS5618475A/en
Priority to US06/551,001 priority patent/US4649408A/en
Publication of JPS6231504B2 publication Critical patent/JPS6231504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To eliminate the adverse effect of carrier to a charge storage type semiconductor device by forming a number of crystal defects within a semiconductor substrate and extremely reducing the crystal defects on the surface layer of the substrate. CONSTITUTION:An image sensor consists of a photoelectrode 13 provided through an insulating film 12 on a semiconductor substrate 11, an optical filed film 14, a channel-stopping region 15, and means for sequentially reading signal charges stored in wells 16a, 16b of potential lower than the photoelectrode 13. The substrate 11 consists of a defective region 11b incorporating a number of crystal defects and an undefective regions 11a, 11c possessing no defect or small amount thereof.
JP9258379A 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof Granted JPS5618475A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9258379A JPS5618475A (en) 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof
EP80104254A EP0023656B1 (en) 1979-07-23 1980-07-18 Charge storage type semiconductor device
DE8080104254T DE3067750D1 (en) 1979-07-23 1980-07-18 Charge storage type semiconductor device
US06/551,001 US4649408A (en) 1979-07-23 1983-11-15 Charge storage type semiconductor device and method for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9258379A JPS5618475A (en) 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5618475A true JPS5618475A (en) 1981-02-21
JPS6231504B2 JPS6231504B2 (en) 1987-07-08

Family

ID=14058449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9258379A Granted JPS5618475A (en) 1979-07-23 1979-07-23 Charge storage type semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5618475A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5665577A (en) * 1979-11-01 1981-06-03 Nec Corp Solidstate image sensor
JPS61294865A (en) * 1985-06-21 1986-12-25 Nippon Texas Instr Kk Charge-coupled type semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128972A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Solid state pickup device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128972A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Solid state pickup device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5665577A (en) * 1979-11-01 1981-06-03 Nec Corp Solidstate image sensor
JPS61294865A (en) * 1985-06-21 1986-12-25 Nippon Texas Instr Kk Charge-coupled type semiconductor device

Also Published As

Publication number Publication date
JPS6231504B2 (en) 1987-07-08

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