JPS62298126A - Testing method for semiconductor device - Google Patents
Testing method for semiconductor deviceInfo
- Publication number
- JPS62298126A JPS62298126A JP14193386A JP14193386A JPS62298126A JP S62298126 A JPS62298126 A JP S62298126A JP 14193386 A JP14193386 A JP 14193386A JP 14193386 A JP14193386 A JP 14193386A JP S62298126 A JPS62298126 A JP S62298126A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- contact
- semiconductor circuit
- electrode
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000012360 testing method Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000000523 sample Substances 0.000 claims description 23
- 238000005259 measurement Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明
産業上の利用分野
本発明は半導体ウェハ上に形成された半導体回路の電気
的特性をウェハ段階にて試験する方法に関するものであ
る。Detailed Description of the Invention 3. Detailed Description of the Invention Field of Industrial Application The present invention relates to a method for testing the electrical characteristics of a semiconductor circuit formed on a semiconductor wafer at the wafer stage.
従来の技術
従来のウニ・・段階での試験方法としては、半導体ウェ
ハ上に形成された各半導体回路チップの電極すべてにプ
ローブ針を接触させ、チップ単位又は、複数のチップ単
位で半導体ウェハ上に形成された全半導体回路の電気的
特性を試験するものがあった。Conventional technology The conventional test method at the stage is to bring a probe needle into contact with all the electrodes of each semiconductor circuit chip formed on a semiconductor wafer, and test the semiconductor wafer in units of chips or in units of multiple chips. There were tests for the electrical characteristics of all semiconductor circuits formed.
発明が解決しようとする問題点
従来の試験方法では、半導体ウェハ上に形成された各半
導体回路チップの電極すべてにプローブ針を接触させな
ければならないため、電極パターンに対応してプリント
板に取付けられた複数のプローブ針の間隔が狭くなりプ
ローブ針が高密度のプローブカードを用いなければなら
ない。又、高精度測定に用いられる同軸プローブ針など
の比較的大きい針を用いることは困難である。又、上記
電極が、上記プローブ針との接触によりはがれたりする
ことや、上記電極と上記プローブ針との接触抵抗のバラ
ツキが特性のバラツキに現われるなどの問題がある。Problems to be Solved by the Invention In the conventional testing method, probe needles must be brought into contact with all the electrodes of each semiconductor circuit chip formed on a semiconductor wafer. The distance between the plurality of probe needles becomes narrower, and a probe card with a high density of probe needles must be used. Furthermore, it is difficult to use relatively large needles such as coaxial probe needles used for high-precision measurements. Further, there are problems such as the electrode peeling off due to contact with the probe needle, and variations in the contact resistance between the electrode and the probe needle resulting in variations in characteristics.
本発明はかかる点に鑑み、上記各半導体回路チップの電
極をスクライブライン上に形成された配線により他のチ
ップの電極と接続し、すべての上記電極に上記プローブ
針を接触させずに、ウエノ1上に形成された全半導体回
路の電気的特性を試験できる方法を提供することを目的
としている。In view of this, the present invention connects the electrodes of each of the semiconductor circuit chips to the electrodes of other chips through wiring formed on the scribe line, and connects the electrodes of each semiconductor circuit chip to the electrodes of other chips without bringing the probe needle into contact with any of the electrodes. It is an object of the present invention to provide a method capable of testing the electrical characteristics of an entire semiconductor circuit formed thereon.
問題点を解決するための手段
本発明は上記問題点を解決するため、半導体ウェハ上の
各半導体回路チップの電極をスクライプライン上に形成
された配線により他のチップの電極と接続し、上記電極
パターンに対応してプリント板に取付けられた複数のプ
ローブ針を上記電極の1部と接触させ半導体回路の電気
的特性を試験する方法である。Means for Solving the Problems In order to solve the above problems, the present invention connects the electrodes of each semiconductor circuit chip on a semiconductor wafer to the electrodes of other chips by wiring formed on a scribe line, and This method tests the electrical characteristics of a semiconductor circuit by bringing a plurality of probe needles attached to a printed board in a pattern into contact with a portion of the electrode.
作用
本発明は、上記した手段により上記電極に接触させるプ
ローブ針の数が1チップ当り少なくてすむため、同時に
多数のチップの上記電極にプローブ針を接触させること
ができ、又高精度測定に用いられる同軸プローブ針など
の比較的大きい針を用いることも可能である。又、上記
配線3により共通電位となっている上記電極2には、プ
ローブ針を接触させないので、電極をきずつけることも
なく又、電気的特性に電極とプローブ針との接触抵抗の
バラツキが含まれることを押えられる。Effect of the Invention In the present invention, the number of probe needles that are brought into contact with the electrodes per chip is reduced by the above-described means, so that the probe needles can be brought into contact with the electrodes of many chips at the same time, and can be used for high-precision measurements. It is also possible to use relatively large needles, such as coaxial probe needles. Further, since the probe needle does not come into contact with the electrode 2, which is at a common potential due to the wiring 3, the electrode is not damaged, and the electrical characteristics include variations in contact resistance between the electrode and the probe needle. Things are suppressed.
実施例
以下、図面に基づいて本発明について更に詳しく説明す
る。第1図に示すように、半導体ウェハ6上の各半導体
回路チップ4の中で、電気的特性を試験する時に同じ電
圧を印加する電極2をスクライプライン1上に形成され
た配線3により接続する。EXAMPLES The present invention will be explained in more detail below based on the drawings. As shown in FIG. 1, in each semiconductor circuit chip 4 on a semiconductor wafer 6, electrodes 2 to which the same voltage is applied when testing electrical characteristics are connected by wiring 3 formed on a scribe line 1. .
次に、第2図に示すごとく上記電極パターンの1部に対
応してプリント板に取付けられた複数のプローブ針5を
上記電極2の1部と接触させ半導体回路の電気的特性を
試験する。又、スクライプライン1上に形成された配線
3は、ダインングソーヤ、レーザなどによシ各チップ4
を分離する時に切断される。なお、7はチップ4上のプ
ローブ針を接触させなくても済む電極である。Next, as shown in FIG. 2, a plurality of probe needles 5 attached to the printed board corresponding to a portion of the electrode pattern are brought into contact with a portion of the electrode 2 to test the electrical characteristics of the semiconductor circuit. Further, the wiring 3 formed on the scribe line 1 is connected to each chip 4 using a dicing sawyer, a laser, etc.
will be cut when separating. Note that 7 is an electrode that does not need to be brought into contact with the probe needle on the chip 4.
発明の詳細
な説明したように、本発明によれば、上記電極に接触さ
せるプローブ針の数が1チップ当り少なくてすむため、
同時に多数のチップの上記電極にプローブ針を接触させ
ることができ測定の高速化が可能である。又上記電極を
プローブ針の接触によりきずつけることもなく、又測定
時の電極とプローブ針との接触抵抗のバラツキが電気的
特性に含まれることを押えることができる。As described in detail, according to the present invention, the number of probe needles that are brought into contact with the electrodes per chip can be reduced.
Probe needles can be brought into contact with the electrodes of many chips at the same time, making it possible to speed up measurement. Further, the electrode is not damaged by contact with the probe needle, and variations in contact resistance between the electrode and the probe needle during measurement can be suppressed from being included in the electrical characteristics.
第1図は本発明に用いる半導体ウェハの要部概略平面図
、第2図は本発明の試験方法を示す図である。
1・・・・・・スクライプライン、2・・・・・・電極
、3・・・・・・配線、4・・・・・・チップ、5・・
・・・・プローブ針、6・・・・・・ウェハ。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図FIG. 1 is a schematic plan view of a main part of a semiconductor wafer used in the present invention, and FIG. 2 is a diagram showing the testing method of the present invention. 1...Scripe line, 2...Electrode, 3...Wiring, 4...Chip, 5...
...Probe needle, 6...Wafer. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure
Claims (1)
ップ間にスクライブラインを有し、上記各半導体回路チ
ップの電極をスクライブライン上に形成された配線によ
り他のチップの電極と接続し、上記電極パターンの1部
に対応して設けられた複数のプローブ針を上記電極の1
部と接触させ半導体回路の電気的特性を試験することを
特徴とする半導体装置の試験方法。A scribe line is provided between an electrode on each semiconductor circuit chip on a semiconductor wafer and the above-mentioned chip, and the electrode of each semiconductor circuit chip is connected to the electrode of another chip by a wiring formed on the scribe line, and the above-mentioned electrode A plurality of probe needles provided corresponding to one part of the pattern are connected to one of the electrodes.
1. A method for testing a semiconductor device, characterized by testing the electrical characteristics of a semiconductor circuit by bringing it into contact with a semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14193386A JPS62298126A (en) | 1986-06-18 | 1986-06-18 | Testing method for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14193386A JPS62298126A (en) | 1986-06-18 | 1986-06-18 | Testing method for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62298126A true JPS62298126A (en) | 1987-12-25 |
Family
ID=15303524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14193386A Pending JPS62298126A (en) | 1986-06-18 | 1986-06-18 | Testing method for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62298126A (en) |
-
1986
- 1986-06-18 JP JP14193386A patent/JPS62298126A/en active Pending
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