JPS62287950A - Electrostatic attracting device - Google Patents

Electrostatic attracting device

Info

Publication number
JPS62287950A
JPS62287950A JP12817386A JP12817386A JPS62287950A JP S62287950 A JPS62287950 A JP S62287950A JP 12817386 A JP12817386 A JP 12817386A JP 12817386 A JP12817386 A JP 12817386A JP S62287950 A JPS62287950 A JP S62287950A
Authority
JP
Japan
Prior art keywords
switch
voltage
attracted
electrode
polarity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12817386A
Other languages
Japanese (ja)
Other versions
JPH074718B2 (en
Inventor
Toshiaki Yoshikawa
俊明 吉川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP61128173A priority Critical patent/JPH074718B2/en
Publication of JPS62287950A publication Critical patent/JPS62287950A/en
Publication of JPH074718B2 publication Critical patent/JPH074718B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To enable attracting force to be stabilized, by providing a switch applying power supply voltage and disconnecting it, a switch short-circuiting paired electrodes, when the power supply voltage is disconnected, and a switch inverting polarity of the applied voltage during attraction. CONSTITUTION:An attracted material 3 is placed on an insulating material 2, and the first switch 6 is turned on. Then voltage is applied to an electrode 1 and the attracted material 3 from a DC power supply 5. Here the second switch 7 is left as turned off. After a fixed length of time, determined by the applied voltage and the kind of the insulating material, the third switch 8 operates inverting polarity of the voltage applied to the electrode 1 and the attracted material 3. Thereafter, the polarity of the applied voltage is inverted by the third switch 8 in every fixed time. When the attracted material 3 is desired to be removed, attracting force is reduced by short-circuiting the electrode 1 and the attracted material 3 through the second switch 7 interlocking to the first switch 6 if it is turned off.

Description

【発明の詳細な説明】 3、発明の詳細な説明 [発明の属する分野] 本発明は、半導体ウェハ等の導電性物質を真空中で保持
する静電吸着装置に関し、特に被吸着物の吸着中に印加
電圧極性を反転することにより吸着力の再現性を向上さ
せ、かつ被吸着物を装脱する際の残留吸着力を減少させ
た静電吸着装置に関する。
Detailed Description of the Invention 3. Detailed Description of the Invention [Field to which the invention pertains] The present invention relates to an electrostatic adsorption device that holds a conductive material such as a semiconductor wafer in vacuum, and particularly relates to an electrostatic adsorption device that holds a conductive material such as a semiconductor wafer in vacuum, and in particular, The present invention relates to an electrostatic chucking device that improves the reproducibility of chucking force by reversing the polarity of the applied voltage and reduces the residual chucking force when loading and unloading an object.

[従来の技術] 近年、半導体製造プロセスはドライ化が急速に進み、エ
ツチング装置、アッシング装置、イオン注入装置、プラ
ズマCVD装置、電子ビームリソグラフィー、X線リソ
グラフィー等では試料を10tOrr以下の真空中で処
理する事が増加している。
[Prior Art] In recent years, semiconductor manufacturing processes have rapidly become dry, and samples are processed in a vacuum of 10 tOrr or less in etching equipment, ashing equipment, ion implantation equipment, plasma CVD equipment, electron beam lithography, X-ray lithography, etc. There are more and more things to do.

従来、試料の保持は機械的方法によるメカニカルチャッ
クや真空チャック等が多く用いられてきたが、メカニカ
ルチャックは試料全体をホルダに一様に深漬することが
できず、また試料に損傷を与えるおそれがあるという欠
点があった。また、真空チャックは大気との圧力差を利
用するため上記ドライプロセス装置の真空チャンバー内
で使用することは不可能である。
Conventionally, mechanical chucks and vacuum chucks have been used to hold samples, but mechanical chucks cannot immerse the entire sample evenly in the holder, and there is a risk of damaging the sample. There was a drawback that there was. Furthermore, since the vacuum chuck utilizes a pressure difference with the atmosphere, it is impossible to use it within the vacuum chamber of the dry process apparatus.

さらに、イオンビームエツチング装置、マグネトロン反
応性イオンエツチング装置、イオン注入装置では、試料
は高速イオンにさらされるため温度が上部し、レジスト
等に熱損傷を与える。また、CVD装置では試料が温度
によって生成膜の生成速度や、性質に強い影響を受ける
等、試料の温度調整をする必要があることが多い。
Furthermore, in an ion beam etching device, a magnetron reactive ion etching device, or an ion implantation device, the sample is exposed to high-speed ions, so the temperature rises, causing thermal damage to resists and the like. Furthermore, in a CVD apparatus, it is often necessary to adjust the temperature of the sample, as the rate of production and properties of the film are strongly affected by the temperature of the sample.

従って真空中で試料とホルダとの一様な熱的コンタクト
をとることができる静電力を利用した静電吸着は非常に
有利である。
Therefore, electrostatic adsorption using electrostatic force is very advantageous because it allows uniform thermal contact between the sample and the holder in a vacuum.

第3図は、この静電吸着の原理を示す。同図において、
1は電極、2は絶縁物、3は導電性物質からなる被吸着
物、4はスイッチ、5は直流電源である。
FIG. 3 shows the principle of this electrostatic adsorption. In the same figure,
1 is an electrode, 2 is an insulator, 3 is an object made of a conductive material, 4 is a switch, and 5 is a DC power source.

上記構成において、電極1上に絶縁物2を介して被吸着
物3を設置し、スイッチ4を投入して電ff11と被吸
着物3の間に電源5により電圧を印加すると、電ff1
1と被吸着物3の間にF(N>=1/2 ・ε0εS 
 (V/d)2 Sなる吸着力が発生する。ここで、ε
Oは真空中の誘電率、εSは絶縁物2の比誘電率、■は
電源5の電圧、dは絶縁物2の厚さ、そしてSは電極1
の面積である。
In the above configuration, when the object 3 to be attracted is placed on the electrode 1 via the insulator 2 and the switch 4 is turned on to apply a voltage from the power source 5 between the voltage ff11 and the object 3 to be attracted, the voltage ff1
F(N>=1/2 ・ε0εS
An adsorption force of (V/d)2S is generated. Here, ε
O is the dielectric constant in vacuum, εS is the relative permittivity of the insulator 2, ■ is the voltage of the power source 5, d is the thickness of the insulator 2, and S is the electrode 1
is the area of

しかし、従来の静電吸着装置では、被吸着物3を吸着し
た場合、スイッチ4を切っても絶縁物2に電荷が残り、
吸着力が長時間残ってしまう。
However, in the conventional electrostatic adsorption device, when the object to be adsorbed 3 is adsorbed, an electric charge remains on the insulator 2 even if the switch 4 is turned off.
Adsorption power remains for a long time.

また、吸着力が減少する時間にもばらつきがある等の問
題があった。
Further, there were problems such as variations in the time taken for the adsorption force to decrease.

第3図の装置において、実際にスイッチ4を切った後、
吸着力が1Q/ciに減少するまでの時間を測定した。
In the device shown in FIG. 3, after actually turning off the switch 4,
The time required for the adsorption force to decrease to 1 Q/ci was measured.

この時の絶縁物2は厚さ50μ/mの△J203溶射膜
である。
The insulator 2 at this time was a ΔJ203 sprayed film with a thickness of 50 μ/m.

以上のように非常に長い時間かかる。As mentioned above, it takes a very long time.

[発明の目的1 本発明は、上述従来例の問題点に鑑みてなされたもので
、静電吸着装置における残留吸着力を速やかに減少させ
、被吸着物の着服動作を速やかに行なえるようにするこ
とを目的とする。
[Objective of the Invention 1] The present invention has been made in view of the problems of the prior art described above, and has an object to quickly reduce the residual adsorption force in an electrostatic adsorption device and to quickly carry out the operation of attaching an object to be adsorbed. The purpose is to

[実施例] 以下、図面を参照しl、iから、本発明の詳細な説明ブ
“る。なJ3、従来例と同一または対応する部品につい
ては同一の符号で表す。
[Embodiments] A detailed description of the present invention will be given below from 1 to 1 with reference to the drawings. Components that are the same as or correspond to those of the conventional example are designated by the same reference numerals.

第1図は、本発明の一実施例に係る静電吸着装置の要部
構成を示す。同図において、2aはウェハを支持する為
のチャック本体であり、図のように絶縁物2と電極1を
内蔵している。絶縁物2の上部、チャック本体2aの上
部外周には、ウェハ3が載置された時にウェハ3と接す
るように設置された電極3aがある。従って、ウェハ3
載置時は電極3aとウェハ3は常に同じ電位を保つ。即
ち、本実施例では直流型m5は電極1と直接ウェハ3に
電圧を印加することになる。6は第1のスイッチで、印
加電圧のオン・オフを行なう。7は第2のスイッチで、
第1のスイッチ6とlaしており、第1のスイッチ6が
オン(閉路)であるときは、第2のスイッチ7はオフ(
開路)となり、第1のスイッチ6がオフであるときは第
2のスイッチ7はオンとなる。8は第3のスイッチで、
電極1と被吸着物3間の電圧極性を一定時間毎に反転す
るタイマスイッチである。
FIG. 1 shows the main structure of an electrostatic adsorption device according to an embodiment of the present invention. In the figure, 2a is a chuck body for supporting a wafer, and as shown in the figure, an insulator 2 and an electrode 1 are built in. On the upper part of the insulator 2 and on the upper outer periphery of the chuck body 2a, there is an electrode 3a installed so as to be in contact with the wafer 3 when the wafer 3 is placed thereon. Therefore, wafer 3
When placed, the electrode 3a and the wafer 3 always maintain the same potential. That is, in this embodiment, the DC type m5 applies voltage directly to the electrode 1 and the wafer 3. A first switch 6 turns on and off the applied voltage. 7 is the second switch,
When the first switch 6 is on (closed), the second switch 7 is off (closed).
When the first switch 6 is off, the second switch 7 is on. 8 is the third switch,
This is a timer switch that reverses the voltage polarity between the electrode 1 and the object to be attracted 3 at regular intervals.

上記構成において、絶縁物2の上に被吸着物3であるウ
ェハを置き、第1のスイッチ6をオンにする。すると直
流電源5から電極1とウェハ3に電圧が印加される。こ
の際、第2のスイッチ7はオフにされている。印加電圧
と絶縁物の種類によって決まった一定時間がたつと第3
のスイッチ8が動作して電極1とウェハ3に印加される
電圧の極性が反転される。以復、一定時間毎に第3のス
イッE8により印加電圧の極性が反転されていく。
In the above configuration, a wafer, which is an object to be attracted 3, is placed on the insulator 2, and the first switch 6 is turned on. Then, a voltage is applied from the DC power supply 5 to the electrode 1 and the wafer 3. At this time, the second switch 7 is turned off. After a certain period of time determined by the applied voltage and the type of insulator, the third
The switch 8 is operated to invert the polarity of the voltage applied to the electrode 1 and the wafer 3. Thereafter, the polarity of the applied voltage is reversed by the third switch E8 at regular intervals.

ウェハ3を取り外したい時は、第1のスイッチ6をオフ
にすれば、第1のスイッチ6と連動している第2のスイ
ッチ7により電極1とウェハ3が短絡され吸着力が減少
する。
When it is desired to remove the wafer 3, the first switch 6 is turned off, and the second switch 7, which operates in conjunction with the first switch 6, short-circuits the electrode 1 and the wafer 3, reducing the adsorption force.

下表は、本実施例において実験を行なった結果(LIら
れたもので、スイッチ6をオフした後吸着力が実質的に
零となるまでの時間を1秒としたときの各印加電圧ごと
の必要最小な電圧極性反転時間を示す。
The table below shows the results of the experiment conducted in this example (LI), and shows the values for each applied voltage when the time from when the switch 6 is turned off until the adsorption force becomes substantially zero is 1 second. Indicates the minimum required voltage polarity reversal time.

以上の値は、静電吸着装置の誘電体2が、第3図のもの
と同様の、AJ203のプラズマ溶射膜で厚さ50μm
の時のものである。
The above values indicate that the dielectric 2 of the electrostatic adsorption device is a plasma sprayed film of AJ203 with a thickness of 50 μm, similar to the one in Fig. 3.
It is from the time of.

吸着中、電圧極性反転時に一瞬吸着力が減少するが、J
3およそ1秒以内に吸着力は復帰する。
During adsorption, the adsorption force momentarily decreases when the voltage polarity is reversed, but J
3. The adsorption force will be restored within about 1 second.

第2図は、本発明の他の実施例に係る静電吸着装置の要
部構成を示す。同図の装置は、第1図の装置に対し、一
対の電1fA1a、ibを共に絶縁物2に対し載置面と
反対但すの面に配置iff L、これらの電極ia、i
b+、:電圧を印加するようにしでいる。
FIG. 2 shows a main part configuration of an electrostatic adsorption device according to another embodiment of the present invention. The device shown in the figure is different from the device shown in FIG.
b+,: Voltage is applied.

その作用は、上述した第1図の装置の場合と全く同様で
ある。
Its operation is exactly the same as that of the device shown in FIG. 1 described above.

また、従来の静電吸着装置を用いた場合、絶縁物2の残
留電荷により吸着力の再現性が非常に悪く、この問題を
解決するために、「被吸着物を1回吸着する毎に、印加
電圧極性を反転する。」ことが提案されている(特開昭
58−114437号)。しかし、この方法では吸着力
の安定化は得られるが、任意の時に吸着力を減少させ、
速やかに被吸着物を取り外すことは困難であった。
Furthermore, when using a conventional electrostatic adsorption device, the reproducibility of the adsorption force is very poor due to the residual charge in the insulator 2. It has been proposed (Japanese Unexamined Patent Publication No. 114437/1983) to reverse the polarity of the applied voltage. However, although this method stabilizes the adsorption force, it may decrease the adsorption force at any time.
It was difficult to quickly remove the adsorbed object.

本実施例では、被吸着物を吸着中に所定の時間間隔で印
加電圧の極性を反転していくため、この吸着力について
も高い再現性を得ることができる。
In this embodiment, since the polarity of the applied voltage is reversed at predetermined time intervals while the object to be attracted is being attracted, it is possible to obtain high reproducibility with respect to this attraction force.

なお、上述した実施例では絶縁物として酸化アルミニウ
ムの溶射膜を用いたが、本発明はこれに限定されるもの
ではなく、他の絶縁物も使用することができる。
In the above-described embodiments, a sprayed film of aluminum oxide was used as the insulator, but the present invention is not limited to this, and other insulators may also be used.

「発明の効果〕 以上説明したように、本発明によれば、被吸着物の吸着
中に印加電圧極性を反転し、さらに被吸着物の取り外し
時に電極と被吸着物間を短絡させるという簡単な動作に
より、被吸着物の脱着を速やかに行なうことができ、し
かも吸着力の安定化を得ることができる。
[Effects of the Invention] As explained above, according to the present invention, the polarity of the applied voltage is reversed while the object to be attracted is being attracted, and furthermore, when the object to be attracted is removed, the electrode and the object to be attracted are short-circuited. Through this operation, the adsorbed object can be quickly desorbed and the adsorption force can be stabilized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例に係る静電吸着装置の要部
構成図、 第2図は、本発明の他の実施例に係る静電吸着装置の要
部構成図、 第3図は、従来の静電吸着装置の要部1f4成図である
。 1.1a、Ib:電極、2:絶縁物、3:被吸着物、5
:直流電源、6:第1のスイッチ、7:第2のスイッチ
、8:第3のスイッチ。
FIG. 1 is a block diagram of main parts of an electrostatic chuck device according to an embodiment of the present invention, FIG. 2 is a block diagram of main parts of an electrostatic chuck device according to another embodiment of the present invention, and FIG. 1 is a schematic diagram of the main part 1f4 of a conventional electrostatic adsorption device. 1.1a, Ib: Electrode, 2: Insulator, 3: Adsorbed object, 5
: DC power supply, 6: first switch, 7: second switch, 8: third switch.

Claims (1)

【特許請求の範囲】 1、被吸着物を載置する面を有する絶縁層と、該絶縁層
の少なくとも上記載置面に分極電荷を発生させる対をな
す電極と、 該対をなす電極間に電圧を印加する直流電源と、上記電
源電圧の印加および遮断を行なう第1のスイッチと、 該第1のスイッチの遮断時に上記対をなす電極間を短絡
させる第2のスイッチと、 上記被吸着物を吸着中に上記印加電圧の極性を少なくと
も一回以上反転させる第3のスイッチとを有する静電吸
着装置。 2、前記第3のスイッチが、所定時間毎に前記印加電圧
の極性を反転させるタイマスイッチである特許請求の範
囲第1項記載の静電吸着装置。 3、前記対をなす電極の一方が、前記被吸着物自身であ
る特許請求の範囲第1または2項記載の静電吸着装置。 4、前記対をなす電極が、前記絶縁層の載置面と反対の
面で前記被吸着物に対面して配置された一対または複数
対の電極からなる特許請求の範囲第1または2項記載の
静電吸着装置。 5、前記絶縁層が、酸化アルミニウムの溶射膜である特
許請求の範囲第1〜4項のいずれか1つに記載の静電吸
着装置。
[Claims] 1. An insulating layer having a surface on which an object to be attracted is placed, a pair of electrodes that generate polarized charges on at least the above-mentioned surface of the insulating layer, and between the pair of electrodes. a DC power supply that applies a voltage; a first switch that applies and cuts off the power supply voltage; a second switch that short-circuits the pair of electrodes when the first switch is cut off; and the object to be attracted. and a third switch for reversing the polarity of the applied voltage at least once during adsorption. 2. The electrostatic adsorption device according to claim 1, wherein the third switch is a timer switch that reverses the polarity of the applied voltage at predetermined intervals. 3. The electrostatic adsorption device according to claim 1 or 2, wherein one of the pair of electrodes is the object to be adsorbed itself. 4. Claim 1 or 2, wherein the pair of electrodes comprises one or more pairs of electrodes arranged facing the object to be attracted on a surface opposite to the mounting surface of the insulating layer. electrostatic adsorption device. 5. The electrostatic adsorption device according to any one of claims 1 to 4, wherein the insulating layer is a sprayed film of aluminum oxide.
JP61128173A 1986-06-04 1986-06-04 Electrostatic adsorption device Expired - Fee Related JPH074718B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61128173A JPH074718B2 (en) 1986-06-04 1986-06-04 Electrostatic adsorption device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61128173A JPH074718B2 (en) 1986-06-04 1986-06-04 Electrostatic adsorption device

Publications (2)

Publication Number Publication Date
JPS62287950A true JPS62287950A (en) 1987-12-14
JPH074718B2 JPH074718B2 (en) 1995-01-25

Family

ID=14978213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61128173A Expired - Fee Related JPH074718B2 (en) 1986-06-04 1986-06-04 Electrostatic adsorption device

Country Status (1)

Country Link
JP (1) JPH074718B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS642947A (en) * 1988-03-12 1989-01-06 Abisare:Kk Mechanical facility provided with electrostatic holding means
JPH0330786U (en) * 1989-07-27 1991-03-26
JPH0345188U (en) * 1989-09-08 1991-04-25
JPH04247639A (en) * 1991-02-04 1992-09-03 Fujitsu Ltd Method of sucking and separating wafer by electrostatic chuck
JPH0574920A (en) * 1991-09-17 1993-03-26 Hitachi Ltd Electrostatic attraction force eliminating method and attraction device
JP2015115992A (en) * 2013-12-10 2015-06-22 国立大学法人信州大学 Gel actuator

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101003387B1 (en) * 2002-09-27 2010-12-23 쓰쿠바 세이코 가부시키가이샤 Electrostatic holding device and electrostatic tweezers using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605539A (en) * 1983-06-23 1985-01-12 Fujitsu Ltd Electrostatic absorber
JPS614611A (en) * 1984-06-15 1986-01-10 Honda Motor Co Ltd Drill reamer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605539A (en) * 1983-06-23 1985-01-12 Fujitsu Ltd Electrostatic absorber
JPS614611A (en) * 1984-06-15 1986-01-10 Honda Motor Co Ltd Drill reamer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS642947A (en) * 1988-03-12 1989-01-06 Abisare:Kk Mechanical facility provided with electrostatic holding means
JPH0330786U (en) * 1989-07-27 1991-03-26
JPH0345188U (en) * 1989-09-08 1991-04-25
JPH04247639A (en) * 1991-02-04 1992-09-03 Fujitsu Ltd Method of sucking and separating wafer by electrostatic chuck
JP2576294B2 (en) * 1991-02-04 1997-01-29 富士通株式会社 Wafer suction / release method for electrostatic chuck
JPH0574920A (en) * 1991-09-17 1993-03-26 Hitachi Ltd Electrostatic attraction force eliminating method and attraction device
JP2015115992A (en) * 2013-12-10 2015-06-22 国立大学法人信州大学 Gel actuator

Also Published As

Publication number Publication date
JPH074718B2 (en) 1995-01-25

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