JPH06112302A - Plasma processing apparatus and its handling method - Google Patents

Abstract

PURPOSE:To control temperature with high precision and uniformity by providing a through hole in the depth direction and a groove for distributing a gas for heat conduction in an electrostatic chuck which holds a sample substrate on a table. CONSTITUTION:An electrostatic chuck 5 of an apparatus A for plasma processing of a sample substrate 3 in a vacuum chamber 6, comprises a conductor 1 and a dielectric 2 containing the conductor therein. Static electricity generated in the dielectric 2 when the conductor is impressed with a voltage, is utilized to hold a sample substrate 3 on a mount table 4 in a manner of freely attaching or removing it. The center of the electrostatic chuck 5 is arranged in a similar figure as the sample substrate 3, and an appropriate number of through holes 8, outermost periphery of which is 5 to 10mm less than the periphery of the electrostatic chuck 5, are formed in the depth direction. Further, a groove 7 distributing a gas for heat conduction is formed at a joint with the electrostatic chuck 5 of the mount table 4. Temperature control of the sample substrate 3 can be performed with high precision and g processing with good energy efficiency can be performed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus and a method of handling the same, and more particularly to a plasma processing in which a processing gas is turned into a plasma in a vacuum container to perform plasma processing such as etching, CVD and sputtering of a sample substrate. The present invention relates to a device and its handling method.

[0002]

2. Description of the Related Art FIG. 7 is a schematic diagram showing a schematic structure around an electrostatic chuck in a first example A1 of a conventional plasma processing apparatus, and FIG. 8 is a schematic view around an electrostatic chuck in a second example A2 of a conventional plasma processing apparatus. FIG. 9 is a schematic diagram showing a schematic configuration, and FIG. 9 is an explanatory diagram showing a sequence in an example of a handling method of a conventional plasma processing apparatus. Since the plasma processing apparatus performs the processing in a vacuum, the space between the sample substrate and its mounting table is usually a vacuum. Therefore, the heat conduction between the sample substrate and the mounting table is very small, and even if the mounting table is cooled, the sample substrate is heated by the irradiation of ions during the plasma processing and the temperature of the sample substrate rises. However, there is a problem that the shape is deteriorated by etching and the film quality is deteriorated by CVD or sputtering. Conventionally, in order to solve these problems, the temperature of the sample base is controlled by controlling the temperature of the mount to a constant temperature and electrostatically adsorbing the sample substrate using an electrostatic chuck placed on the mount. (Japanese Patent Publication No. 57-44747). However, simply adsorbing the sample substrate by using the electrostatic chuck cannot sufficiently control the temperature of the sample substrate because the thermal conductance between the sample substrate and the electrostatic chuck is insufficient. Therefore, it is necessary to introduce a heat conduction gas between the sample substrate and the electrostatic chuck and further improve the heat conduction by using this gas as a heat conduction medium. Then, the gas had to be uniformly filled between the sample substrate and the electrostatic chuck. Therefore, in order to introduce the gas between the sample substrate 1 and the electrostatic chuck 2, as in the apparatus A1 shown in FIG. 63-300517), or a groove 3'for distributing gas to the surface of the electrostatic chuck 2'as in the apparatus A2 shown in FIG.
Was formed (Japanese Patent Laid-Open No. 2-119131). On the other hand, as a handling method of the plasma processing apparatus, as shown in FIG. 9, a sample substrate is placed on a mounting table, plasma is first generated, and then a voltage is applied to the electrostatic chuck to end the processing in the plasma processing apparatus. Before that, the applied voltage was set to 0 and the plasma treatment was completed (Japanese Patent Laid-Open No. 3-236255).
By the way, the electrostatic chuck has an insulator sandwiched between the conductor to which a voltage is applied and the sample substrate to be attracted. This insulator is also a dielectric, and if one with a large dielectric constant is used, ， Accordingly, a large adsorption force is obtained. This is because when a voltage is applied to the dielectric, polarization occurs inside the dielectric, and the higher the permittivity, the greater the degree of this polarization. In general, since this polarization has hysteresis, the polarization does not completely become zero even if the voltage applied to the once-polarized dielectric is zero. That is, even if the applied voltage is set to 0, the attraction force does not become 0. Therefore, when removing the sample substrate from the electrostatic chuck, the sample substrate may not be immediately separated due to the residual suction force, and may be splashed or broken. In addition, the reproducibility of the attraction force of the electrostatic chuck deteriorates,
Since the reproducibility of the temperature controllability in the plasma processing apparatus using the electrostatic chuck is deteriorated, there is a problem that the result of the plasma processing changes for each sample substrate. Therefore, when the sample substrate is continuously processed, in order to ensure removal of the electric charge remaining on the electrostatic chuck, the surface of the electrostatic chuck is exposed to plasma after the sample substrate is taken out, and the surface of the electrostatic chuck is sputtered. By doing so, the charge was removed (JP-A-4-99024).

[0003]

However, the conventional plasma processing apparatus described above has the following problems. (1) In the electrostatic chuck 2 of the plasma processing apparatus A1 disclosed in Japanese Patent Laid-Open No. 63-300517, the electrostatic chuck 2 is formed in order to form the distribution holes 3 in the electrostatic chuck itself as shown in FIG. It is necessary to increase the thickness of 2. However,
Since the electrostatic chuck 2 is made of a dielectric material,
When the thickness of the electrostatic chuck 2 is increased, a mounting table 4 for applying a high frequency (RF) or electrically used as an earth,
The capacitance of the capacitor formed between the sample substrate 1 and the sample substrate 1 is significantly reduced. Therefore, when RF is applied, the loss of the RF power applied to the sample substrate 1 becomes large, and the RF power may be concentrated in other places to cause abnormal discharge. Further, when the mounting table 4 is used as an earth, similarly, there is a problem that power from plasma does not enter the sample substrate 1 and the sample substrate 1 goes to another place. (2) In the electrostatic chuck 2'of the plasma processing apparatus A2 disclosed in Japanese Patent Laid-Open No. 2-119131, as shown in FIG. 8, the gas is distributed by forming the groove 3'on the sample substrate 1'side of the electrostatic chuck 2 '. The gas is formed and distributed, but in such a case, since the groove 3'is carved on the surface of the electrostatic chuck 2 ',
The contact area between the sample substrate 1'and the dielectric 2a 'of the electrostatic chuck 2'is reduced, and the attraction force is reduced. When the sample substrate 1'is actually processed continuously, the suction force is only about the pressure difference between the gas pressure charged between the sample substrate 1'and the electrostatic chuck 2'and the vacuum container (not shown). There is a change in the suction force or a decrease in the suction force for each sample substrate 1 '. For this reason, it is necessary to set a margin for the adsorption force to be several times larger than the pressure of the filling gas. Therefore, in the electrostatic chuck 2'having the groove 3'formed on the surface, it is necessary to apply a larger voltage in order to enhance the attraction force. Further, since the capacitance as a capacitor is different between the place where the dielectric 2a is in contact and the place where the dielectric 2a is not in contact, a potential difference is generated in the sample substrate 1 ', and the electronic device on the sample substrate 1'is deteriorated. was there. Further, the handling method of the plasma processing apparatus has the following problems. That is, in the method of handling the plasma processing apparatus disclosed in Japanese Patent Laid-Open No. 4-99024, the surface of the electrostatic chuck is sputtered with plasma in order to remove the residual charges, so if, for example, 10 Å sputtering is performed in one processing, Sample substrate 10000
The surface of the electrostatic chuck will be 100,000Å (1
0 μm) will also be scraped off. In such cases,
The thickness of the insulator of the electrostatic chuck becomes thin, the suction force changes due to the rough surface, and the amount of gas filled between the sample substrate and the electrostatic chuck leaks into the vacuum container. Because of the increase, the reproducibility of the plasma processing becomes worse. Further, since the discharge is generated after the plasma processing is finished, the throughput for processing the sample substrate is deteriorated by the time required for the discharge. Furthermore, there is a problem that impurities contained in the sputtered electrostatic chuck contaminate the sample substrate.
In order to solve the problems in the conventional art, the present invention improves a plasma processing apparatus and a handling method thereof,
An object of the present invention is to provide a plasma processing apparatus capable of controlling the temperature of a sample substrate to a uniform temperature with high accuracy and capable of performing processing with good energy efficiency and reproducibility, and a handling method thereof.

[0004]

In order to achieve the above object, the present invention comprises a conductor and a dielectric containing the conductor, and is generated in the dielectric when a voltage is applied to the conductor. The electrostatic chuck for detachably holding the sample substrate mounted on the dielectric on the temperature-controlled mounting table by using the static electricity to generate the sample substrate held by the electrostatic chuck. In a plasma processing apparatus for performing plasma processing in a vacuum container, the conductor is avoided in the electrostatic chuck to form an appropriate number of through holes in the thickness direction of the electrostatic chuck, and a gas for heat conduction is provided in the through holes. The plasma processing apparatus is characterized in that a groove for distribution is formed on a joint surface of the mounting table with the electrostatic chuck. Further, in the plasma processing apparatus, each center of the through holes formed in the electrostatic chuck is arranged in a shape similar to the sample substrate, and the outermost circumference thereof is smaller than the outer circumference of the electrostatic chuck by 5 mm to 10 mm. Furthermore, in the plasma processing apparatus, the outer circumference of the electrostatic chuck is 0 mm to 2 mm smaller than the outer circumference of the sample substrate. Furthermore, the average surface roughness of the surface of the electrostatic chuck holding the sample substrate is 0.3.
It is a plasma processing apparatus smaller than μm. Furthermore, the plasma processing apparatus is such that the temperature of the mounting table is controlled such that the temperature gradually decreases from the center of the mounting table toward the outer periphery. A sample substrate, which is formed of a conductor and a dielectric containing the conductor, is placed on the dielectric by using static electricity generated in the dielectric when a voltage is applied to the conductor. A method of handling a plasma processing apparatus, comprising: an electrostatic chuck for detachably holding a substrate on a temperature-controlled mounting table, wherein the sample substrate held by the electrostatic chuck is plasma-processed in a vacuum container. Is placed on the electrostatic chuck, plasma is generated,
A predetermined voltage is once applied to the conductor of the electrostatic chuck, and then a reverse voltage is applied to attract the sample substrate placed on the electrostatic chuck, and the sample substrate attracted by the electrostatic chuck. The heat conducting gas is filled between the electrostatic chuck and the electrostatic chuck, the plasma treatment is performed, and the heat conducting gas filled between the sample substrate and the electrostatic chuck after the plasma treatment is completed. Is discharged, the voltage applied to the conductor of the electrostatic chuck is gradually reduced to 0, the conductor is grounded, and the generation of the plasma is stopped. It is a method of handling a plasma processing apparatus which is detached from a chuck. Furthermore, it is a method of handling a plasma processing apparatus in which the predetermined voltage is a negative voltage. Further, it is a method of handling a plasma processing apparatus in which the predetermined voltage is a positive voltage.

[0005]

According to the present invention, a conductor and a dielectric containing the conductor are formed, and the static electricity generated in the dielectric when a voltage is applied to the conductor is used to form a dielectric on the dielectric. Of a plasma processing apparatus that includes an electrostatic chuck that detachably holds a sample substrate mounted on a temperature-controlled mounting table, and that performs plasma processing on the sample substrate held by the electrostatic chuck in a vacuum container. An appropriate number of through holes in the thickness direction of the electrostatic chuck are formed in the electrostatic chuck so as to avoid the conductor, and a groove for distributing a heat conduction gas is provided in the through hole. It is formed on the joint surface with. Therefore, the groove for the mounting table and the through hole of the electrostatic chuck can be uniformly filled with the heat-conducting gas, so that the thermal conductance from the mounting table to the sample substrate is improved and the temperature difference between them is increased. Can be made smaller. Further, since no groove is provided on the electrostatic chuck itself, the thickness thereof can be made thinner than that of the conventional example, and it is easy to secure the adsorption area of the sample substrate. Therefore, there is no possibility of causing energy loss as in the conventional example. As a result, the temperature control of the sample substrate can be performed with high accuracy, and the process with high energy efficiency can be performed. Furthermore, the centers of the through holes formed in the electrostatic chuck are arranged in a shape similar to that of the sample substrate, and the outermost periphery thereof is 5 m closer to the outer periphery of the electrostatic chuck.
It is arranged so as to be smaller by m to 10 mm. Therefore,
Leakage of the heat conducting gas from the outer circumference of the electrostatic chuck can be suppressed to reduce variations in the temperature of the sample substrate. Further, the outer circumference of the electrostatic chuck is formed to be 0 mm to 2 mm smaller than the outer circumference of the sample substrate. Therefore, the electrostatic chuck does not run off the sample substrate and is sputtered, and the uncooled portion of the sample substrate can be extremely reduced. Further, the surface of the electrostatic chuck that holds the sample substrate is formed to have an average surface roughness of less than 0.3 μm. Therefore, also by this, the leakage of the heat conducting gas from the outer circumference of the electrostatic chuck can be suppressed and the variation in the temperature of the sample substrate can be reduced. Further, the temperature control of the mounting table is controlled so that the temperature gradually decreases from the center of the mounting table toward the outer periphery. Normal,
Since the outer periphery of the sample substrate is heated due to the leakage of the heat conduction gas, the temperature of the sample substrate can be made uniform by providing a temperature gradient in the opposite direction. Further, in handling the plasma processing apparatus, plasma is generated after the sample substrate is placed on the electrostatic chuck, and a predetermined voltage (negative voltage or positive voltage) is temporarily applied to the conductor of the electrostatic chuck. After being applied, a reverse voltage (positive voltage or negative voltage) is applied to attract the sample substrate mounted on the electrostatic chuck. Next, after the heat conduction gas is filled between the electrostatic chuck and the sample substrate attracted by the electrostatic chuck,
Plasma treatment is performed. After the plasma processing is completed, the heat conducting gas filled between the sample substrate and the electrostatic chuck is discharged. Then, after the voltage applied to the conductor of the electrostatic chuck is gradually reduced to 0 and then the conductor is grounded and the generation of the plasma is stopped, the sample substrate is electrostatically charged. Removed from chuck. Therefore, the residual charge due to the hysteresis of the dielectric of the electrostatic chuck can be made as small as possible, and when the sample substrate is detached from the electrostatic chuck, there is no risk of the sample substrate bouncing or cracking.

[0006]

Embodiments of the present invention will be described below with reference to the accompanying drawings for the understanding of the present invention. The following embodiments are examples of embodying the present invention and are not intended to limit the technical scope of the present invention. Here, FIG. 1 is a schematic diagram showing a schematic configuration of a plasma processing apparatus A according to a first embodiment of the present invention, FIG. 2 is a plan view showing a groove shape of a mounting table, and FIG. 6 is a graph showing the cooling state, FIG. 4 is an explanatory view showing the pressure distribution state of He gas, FIG. 5 is a graph showing the relationship between the temperature distribution of the sample substrate in plasma and the position of the through hole of the electrostatic chuck, FIG. FIG. 7 is an explanatory diagram showing a sequence of a method of handling the plasma processing apparatus A according to the second embodiment of the present invention. As shown in FIG. 1, the plasma processing apparatus A according to the first embodiment is formed of a conductor 1 and a dielectric 2 containing the conductor 1, and the dielectric 2 is formed when a voltage is applied to the conductor 1. The sample substrate 3 placed on the dielectric 2 by using the static electricity generated in the
An electrostatic chuck 5 for removably holding the substrate on a temperature-controlled mounting table 4 is provided, and the sample substrate 3 held by the electrostatic chuck 5 is subjected to plasma processing such as etching, CVD and sputtering in a vacuum container 6. The configuration is similar to that of the conventional example. However, in this embodiment, the electrostatic chuck 5 is provided with a proper number of through holes 7 in the thickness direction of the electrostatic chuck 5 while avoiding the conductor 1, and the through holes 7 are provided with a heat conduction gas (for example, He gas or the like). This is different from the conventional example in that a groove 8 for distributing gas (hereinafter abbreviated as gas) is formed on the joint surface of the mounting table 4 with the electrostatic chuck 5 as shown in FIG. The plasma treatment by the apparatus A physically and chemically treats the sample substrate 3 with the ions and radicals in the plasma. Especially when a chemical reaction is used, the reaction is greatly influenced by the temperature of the sample substrate 3. . Therefore, it is necessary to control the temperature of the sample substrate 3 with high precision in order to perform the plasma processing with high precision. (Here, the electrostatic chuck 5 having good adhesion to the sample substrate 3 is used for controlling the temperature of the sample substrate 3.) Therefore, the temperature of the mounting table 4 on which the electrostatic chuck 5 is mounted is set. Control and mount table 4
The temperature control is performed by keeping the temperature difference between the sample substrate 3 and the sample substrate 3 constant. Here, it is important to keep the temperature of the sample substrate 3 as uniform as possible over the entire surface of the sample substrate 3 and to improve the accuracy of the control temperature of the sample substrate 3 and the mounting table 4.
The temperature difference between and is as small as possible, and by using the electrostatic chuck 5, the sample substrate 3 to be plasma-treated is not adversely affected. According to this apparatus A, the contact thermal conductance between the sample substrate 3 and the electrostatic chuck 5 is first reduced by empirically making the average surface roughness of the surface of the electrostatic chuck 5 holding the sample substrate 3 smaller than 0.3 μm. By improving the thermal conductance of the filled gas, a large thermal conductance can be obtained to effectively control the temperature. Also,
The joining of the electrostatic chuck 5 and the mounting table 4 has not been a problem in the past, but fixing with screws is not enough to increase the thermal conductance between them, and it is firmly fixed by adhesion or welding. By placing the table 4
It is possible to improve the thermal conductance from to the sample substrate 3 and reduce the temperature difference between the sample substrate 3 and the mounting table 4. As a result, accurate temperature control can be performed.

Next, there is a method of making the temperature distribution of the sample substrate 3 uniform. The temperature of the sample substrate 3 is controlled by the gas pressure filled between the sample substrate 3 and the electrostatic chuck 5 as shown in FIG. Change. That is, if the pressure of the filled gas is uneven, the sample substrate 3 will also be uneven in temperature distribution. FIG. 4 shows the distribution of pressure of the filled gas. The gas is introduced by being controlled by an external pressure controller (not shown) in advance, but is slightly leaked into the vacuum container 6 from between the electrostatic chuck 5 and the sample substrate 3. The less the gas leaks, the smaller the effect on the plasma processing. for that purpose,
It is necessary to reduce the gap between the sample substrate 3 and the electrostatic chuck 5. Therefore, as described above, by reducing the average surface roughness of the sample substrate 3, this gap can be reduced and the amount of leakage can be reduced. Further, since the pressure of the introduced gas is 10 to 20 Torr and the pressure in the vacuum container 6 is 0.0005 to 0.1 Torr, the pressure in the vacuum container 6 from between the electrostatic chuck 5 and the sample substrate 3 is increased. There is a flow of gas towards it. This gas flow causes a pressure distribution near the outer circumference of the electrostatic chuck 5. The gas pressure drop increases when the resistance of the gas flow is relatively large, but from the gas inlet 10 to the through hole 7 of the electrostatic chuck 5, the gas flow due to the gap between the electrostatic chuck 5 and the sample substrate 3 is reduced. Large enough compared to resistance. That is, the pressure drops substantially linearly between the outermost periphery of the through hole 7 formed in the electrostatic chuck 5 so that its central axis has a shape similar to the sample substrate 3, for example, a concentric circle, and the vacuum container 6. It will be. In order to bring the sample substrate 3 to a uniform temperature, it is preferable that the length of this pressure drop is short, but if it is too short, there is a trade-off relationship that the amount of gas leaked into the vacuum container 6 increases. In practice, it is necessary to first define the amount of leakage and to determine the position of the outermost through hole 7 so that the temperature is as uniform as possible within that range. FIG. 5 shows the result obtained from the temperature distribution calculation in that case, using the position of the outermost through hole 7 in that case as a parameter. From this result, it can be seen that the position of the through hole 7 at the outermost circumference is 5 to 10 mm smaller than the outer circumference of the electrostatic chuck 5 because the temperature variation is ± 5 ° C. when the gas leak amount is 1 sccm or less. Further, when plasma processing is performed in a state where the electrostatic chuck 5 larger than the sample substrate 3 or a part of the electrostatic chuck 5 protrudes from the sample substrate 3, the surface of the electrostatic chuck 5 is sputtered by the plasma, and impurities are removed from the sample substrate 3. 3 will be adversely affected. Therefore, the electrostatic chuck 5 needs to be smaller than the sample substrate 3. However, if you make it too small,
The area where the temperature is not controlled by the electrostatic chuck 5 becomes large, and the temperature distribution of the sample substrate 3 becomes large. Further, the electrostatic chuck 5 is preferably as large as possible within an allowable range in terms of accuracy when the sample substrate 3 is transferred and placed, and therefore, it is preferable that the electrostatic chuck 5 is smaller than the size of the sample substrate 3 by 0 to 2 mm. .

Further, as described above, the outside of the sample substrate 3 is heated due to the leakage of the gas from the outer periphery, so that the temperature of the mounting table 4 is gradually increased from the center to the outer periphery in advance. It is possible to make the temperature of the sample substrate 3 uniform by controlling the temperature to be extremely low. As described above, by using the plasma processing apparatus A according to the first embodiment, the temperature of the sample substrate 3 can be accurately controlled to a uniform temperature.
The chemical reaction that occurs in plasma processing can be controlled, and the shape and selectivity can be improved by etching. Sputtering and CV
In D, the film quality can be improved. Moreover, since it can be made uniform on the sample substrate 3, it can greatly contribute to the improvement of the yield in the case of manufacturing electronic devices. Further, since the electrostatic chuck 5 itself is not provided with a groove, the thickness thereof can be made thinner than that of the conventional example, and the adsorption area of the sample substrate 3 can be easily secured. Therefore, there is no possibility of causing energy loss as in the conventional example. as a result,
It is possible to control the temperature of the sample substrate 3 with high accuracy and to perform energy-efficient processing. Subsequently, a handling method of the plasma processing apparatus A according to the second embodiment will be described with reference to FIGS. 1 and 6. The plasma processing apparatus to be handled is not limited to the apparatus A according to the first embodiment, but the apparatus A will be described here for convenience of description. As shown in FIGS. 1 and 6, after the sample substrate 3 is first placed on the electrostatic chuck 5, plasma is first generated to electrically connect the sample substrate 3 to the vacuum container 6 via the plasma. . After this, the electrostatic chuck 5
A negative voltage (or a positive voltage) (corresponding to a predetermined voltage) is once applied to the conductor 1 to cancel the residual charge so far, and then a positive voltage (or a negative voltage) (corresponding to a reverse voltage) is applied. Therefore, the adsorption by the electrostatic chuck 5 can be performed with good reproducibility. Then, processing is performed, and after that, the voltage of the electrostatic chuck 5 is not turned off by a switch or the like, but
By gradually reducing the voltage to 0 and then connecting it to the ground of the vacuum container 6, the residual charge due to hysteresis can be minimized. Therefore, after this, the sample substrate 3
There is no risk of the sample substrate 3 bouncing or cracking when the is removed from the electrostatic chuck 5. As described above, according to the handling method of the second embodiment, it is possible to improve the reproducibility of the attraction force of the electrostatic chuck 5 in the plasma processing. Therefore, the plasma processing using the electrostatic chuck 5 can be processed with high reproducibility. Further, since the residual suction force can be made as small as possible, the sample substrate 3 may be splashed when the sample substrate 3 is removed after processing,
It will not break. Further, unlike the conventional handling method, since the surface of the electrostatic chuck 5 is not sputtered by plasma, plasma processing can be performed without deterioration of the electrostatic chuck 5 and reduction in throughput. The size, number (number of threads), etc. of the through holes 7 of the electrostatic chuck 5 and the grooves 8 of the mounting table 4 in the apparatus A of the first embodiment are different from those of the sample substrate 3 and the mounting table 4 in actual use. It can be appropriately determined from the flow rate and pressure of the gas that can sufficiently secure the thermal conductance between the two. In the handling method of the second embodiment, as described above, the device A of the first embodiment is targeted for convenience of explanation, but various devices of the conventional example may be targeted during actual use. However, when the apparatus A is targeted as described above, both energy efficiency and reproducibility can be processed favorably.

[0009]

Since the plasma processing apparatus and the method of handling the same according to the present invention are configured as described above, (1) by using this apparatus, the temperature of the sample substrate is accurately controlled to a uniform temperature. be able to. Therefore, it is possible to control the chemical reaction that occurs in the plasma treatment, improve the shape and the selection ratio by etching, and improve the film quality by sputtering or CVD. Moreover, since it can be made uniform on the sample substrate, it can greatly contribute to the improvement of the yield in the case of manufacturing electronic devices. Further, since the electrostatic chuck itself is not provided with a groove, its thickness can be made smaller than that of the conventional example, and it is easy to secure the adsorption area of the sample substrate. Therefore, there is no possibility of causing energy loss as in the conventional example. As a result, the temperature control of the sample substrate 3 can be performed with high accuracy, and energy-efficient processing can be achieved. (2) By using this handling method, the attraction force of the electrostatic chuck in plasma processing can be improved with good reproducibility. Therefore, the plasma processing using the electrostatic chuck can be processed with high reproducibility. Moreover, since the residual suction force can be made as small as possible, the sample substrate will not be splashed or cracked when the sample substrate is removed after the processing. Furthermore, unlike the conventional handling method, since the surface of the electrostatic chuck is not sputtered by plasma, there is no deterioration of the electrostatic chuck or reduction in throughput,
It becomes possible to perform plasma treatment. As a result, it is possible to obtain a plasma processing apparatus and a handling method thereof that can control the temperature of the sample substrate to a uniform temperature with high accuracy and can perform processing with good energy efficiency and reproducibility.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a schematic configuration of a plasma processing apparatus A according to a first embodiment of the present invention.

FIG. 2 is a plan view showing the groove shape of the mounting table.

FIG. 3 is a graph showing a cooling state of a sample substrate with He gas.

FIG. 4 is an explanatory diagram showing a pressure distribution state of He gas.

FIG. 5 is a graph showing the relationship between the temperature distribution of the sample substrate in plasma and the position of the through hole of the electrostatic chuck.

FIG. 6 is an explanatory diagram showing a sequence of a handling method of the plasma processing apparatus A according to the second embodiment of the present invention.

FIG. 7 is a schematic diagram showing a schematic configuration around an electrostatic chuck in a first example A1 of a conventional plasma processing apparatus.

FIG. 8 is a schematic diagram showing a schematic configuration around an electrostatic chuck in a second example A2 of the conventional plasma processing apparatus.

FIG. 9 is an explanatory diagram showing a sequence in an example of a handling method of a conventional plasma processing apparatus.

[Explanation of symbols]

A ... Plasma processing apparatus 1 ... Conductor 2 ... Dielectric 3 ... Sample substrate 4 ... Mounting table 5 ... Electrostatic chuck 6 ... Vacuum container 7 ... Through hole 8 ... Groove 9 ... Bonding surface

Claims (8)

[Claims] 1. A conductor is formed of a conductor and a dielectric containing the conductor, and is placed on the dielectric by using static electricity generated in the dielectric when a voltage is applied to the conductor. In the plasma processing apparatus, which comprises an electrostatic chuck that detachably holds the sample substrate on a temperature-controlled mounting table, and plasma-processes the sample substrate held by the electrostatic chuck in a vacuum container, An appropriate number of through holes in the thickness direction of the electrostatic chuck are formed in the chuck while avoiding the conductor, and a groove for distributing a heat conduction gas is formed in the through hole to join the electrostatic chuck of the mounting table. A plasma processing apparatus characterized by being formed on a surface. 2. The electrostatic chuck according to claim 1, wherein each of the through holes formed in the electrostatic chuck has a center similar to that of the sample substrate, and the outermost circumference thereof is smaller than the outer circumference of the electrostatic chuck by 5 mm to 10 mm. Plasma processing equipment. 3. The plasma processing apparatus according to claim 1, wherein the outer circumference of the electrostatic chuck is smaller than the outer circumference of the sample substrate by 0 mm to 2 mm. 4. The plasma processing apparatus according to claim 1, wherein an average surface roughness of a surface of the electrostatic chuck that holds the sample substrate is smaller than 0.3 μm. 5. The plasma processing apparatus according to claim 1, wherein the temperature control of the mounting table is such that the temperature gradually decreases from the center of the mounting table toward the outer periphery. 6. A conductor formed of a conductor and a dielectric containing the conductor and placed on the dielectric by utilizing static electricity generated in the dielectric when a voltage is applied to the conductor. A method of handling a plasma processing apparatus, comprising: an electrostatic chuck that detachably holds a sample substrate on a temperature-controlled mounting table; and plasma processing the sample substrate held by the electrostatic chuck in a vacuum container, After the sample substrate is placed on the electrostatic chuck, plasma is generated, a predetermined voltage is once applied to the conductor of the electrostatic chuck, and then a reverse voltage is applied to place the sample substrate on the electrostatic chuck. The sample substrate thus adsorbed is adsorbed, a heat conducting gas is filled between the sample substrate adsorbed by the electrostatic chuck and the electrostatic chuck, and then the plasma treatment is performed. After the plasma treatment is completed, The heat-conducting gas filled between the sample substrate and the electrostatic chuck is discharged, and the voltage applied to the conductor of the electrostatic chuck is gradually reduced to 0, and then the conductor is removed. Is a method for handling a plasma processing apparatus in which the sample substrate is removed from the electrostatic chuck after the plasma is stopped and the plasma is stopped. 7. The method of handling a plasma processing apparatus according to claim 6, wherein the predetermined voltage is a negative voltage. 8. The method of handling a plasma processing apparatus according to claim 6, wherein the predetermined voltage is a positive voltage.