JPS62287066A - Hybrid ion plating method and apparatus - Google Patents
Hybrid ion plating method and apparatusInfo
- Publication number
- JPS62287066A JPS62287066A JP12945386A JP12945386A JPS62287066A JP S62287066 A JPS62287066 A JP S62287066A JP 12945386 A JP12945386 A JP 12945386A JP 12945386 A JP12945386 A JP 12945386A JP S62287066 A JPS62287066 A JP S62287066A
- Authority
- JP
- Japan
- Prior art keywords
- ion plating
- evaporated
- substance
- plasma
- hollow cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007733 ion plating Methods 0.000 title claims abstract description 21
- 230000005284 excitation Effects 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 230000006698 induction Effects 0.000 claims abstract description 3
- 230000008020 evaporation Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims 1
- 229910001423 beryllium ion Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
（技術分野）
この発明は、ハイブリットイΔ−ンブレー１インク方法
どぞの装置に関りるＬ）のである。さらに訂しくけ、ホ
［１カソードプラズマ法と高周波励起ブ゛ラズマ法とを
複合化した、ｆｌｊｌ的率、かつ、安定ｆ）ｌに優れた
プラズマ状態を作り、優れた晶質の薄ｌつ１を形成する
ことを可１１Ｌどしたバイア゛リッドイΔ−ンブレーテ
ィング方法とその装置に関ηるｂのである。DETAILED DESCRIPTION OF THE INVENTION 3. Detailed Description of the Invention (Technical Field) The present invention relates to an apparatus for a hybrid ink method. Furthermore, by combining the cathode plasma method and the radio-frequency excited plasma method, we created a plasma state with excellent fjl rate and stability, and produced a thin plasma with excellent crystallinity. The present invention relates to a via-variant delta-enblading method and an apparatus for the same, which makes it possible to form 11L.
（背輿技術）
プラスチック、金属、セラミックス等の様々の形状の物
品の表面に、金属、無機物、カーホン、あるいは右（幾
ポリマーヤ）１ラミツクスイｔどの薄ｎう）（蒸着源）
を形成したしの（５１１、導電・１）１ノｒルム、絶縁
膜、表示素子、）１乙学フイルム、電子−ノ′ハイス、
保護膜、装部などの多様／、ｆ川途用野ｌ＼の応用か明
侍されているもので、Ｊで番こ実用化されでいるもの＝
し少くない。(Backpacking technology) Metals, inorganic materials, carboxylic materials, or other materials such as metals, inorganic materials, carbon fibers, etc. are applied to the surfaces of articles of various shapes such as plastics, metals, ceramics, etc. (Vapor deposition source)
Formed (511, conductive, 1) 1 norm, insulating film, display element,) 1 Otsugaku film, electronic high speed,
A variety of protective films, coverings, etc./Those that have been well-known for their application in the F River application field, and have been put into practical use in J =
Not a little.
このような薄膜を形成するための方法、装置としでは、
真空蒸着装置内に置いた蒸発源からの蒸発粒子をグロー
敢電によってイオン化して行うものか知られている。イ
オンプレーティングと呼ばれている技術である。The method and apparatus for forming such a thin film are as follows:
It is known that evaporation particles from an evaporation source placed in a vacuum evaporation apparatus are ionized by glow current. The technique is called ion plating.
イオンプレーティングについては、小口カソード型のも
のと、高周波励起型のｂのとかあることし知られている
。Regarding ion plating, there are two known types: small cathode type and high frequency excitation type b.
これらのイオンプレーティング法は薄膜形成技術として
優れたものではあるが、生産効率と薄膜の↑ノ１能の両
面において優れた技術、装置としては依然として多くの
問題か未解決の現状にある。Although these ion plating methods are excellent as thin film forming technologies, they still have many problems or unresolved issues as a technology and device that are excellent in terms of both production efficiency and thin film performance.
覆なわ６、ホロカソードの場合には、カソード部等の装
置の汚れ、損傷が避けられず、熱的安定・１１に欠ＩＪ
、ｉ’ｌ肱の性能の均一・１ノ１を確実な・ｂのとす
ることノ〕ζテ１１シいという問題がある。このため、
優れた品質の薄膜を、連続的な処理どじで実現Ｍること
は困ｌ！ＩＩであった。6. In the case of a hollow cathode, contamination and damage to equipment such as the cathode part are unavoidable, and thermal stability and 11.
, There is a problem that it is difficult to ensure uniformity of performance of i'l 1, 1, and b. For this reason,
It is difficult to create thin films of excellent quality through continuous processing! It was II.
また、高周波励起型のイオンプレーティングの場合には
、優れた品質の薄膜を安定して仁するためには極めて有
効であるものの、ぞの薄膜を効率的に製）盾するための
生産・１ノ１０点では若干の問題かあつ Ｉこ 。In addition, in the case of high-frequency excitation type ion plating, although it is extremely effective for stably producing thin films of excellent quality, it is difficult to efficiently produce thin films. With a score of 10, there are some problems.
（発明の目的）
この発明は、このようｔｉ事情に鑑みてなされたもので
あって、優れた品質の薄膜を効率的に形成するための新
しいタイプのイオンプレーディングの方法と装置とを促
供することを目的としている。(Objective of the Invention) The present invention was made in view of the above-mentioned circumstances, and provides a new type of ion plating method and apparatus for efficiently forming thin films of excellent quality. The purpose is to
（発明の構成）
この発明のイオンプレーティング方法は、ホ［１カソー
ドプラズマイオンブレーテイングと高周波励起イオンプ
レーティングとをハイブリッド化したことを特徴とする
もので、これ１（でにイ＾い優れた効果を実現するもの
である。(Structure of the Invention) The ion plating method of the present invention is characterized in that it is a hybrid of cathode plasma ion plating and high frequency excited ion plating. This will achieve the desired effect.
また、この発明は、このハイブリッドイオンプレーティ
ングのための装置をも実現覆る。この装置は、真空室と
；排気系と；ガス導入系と；薄膜形成月利の蒸発源と；
必要により設ける抵抗加熱または高周波誘導加熱の蒸発
手段と；ホ［Ｉカソードプラズマガンど；高周波励起の
手段と；被処理物の保持と移動の手段とからなり、該ホ
ロカソードプラズマガンによって蒸発源物質の蒸発とイ
オン化を行い、かつ、被処理物と蒸発源物質との間に設
しＪだ高周波励起手段によって蒸発粒子のイオン化励起
を行うようにしたことを特徴どしている。The invention also provides an apparatus for this hybrid ion plating. This device includes a vacuum chamber; an exhaust system; a gas introduction system; and an evaporation source for thin film formation;
It consists of an evaporation means of resistance heating or high-frequency induction heating provided as necessary; a means of high-frequency excitation such as a cathode plasma gun; and a means of holding and moving the object to be treated. The evaporated particles are evaporated and ionized, and the evaporated particles are ionized and excited by high-frequency excitation means provided between the object to be treated and the evaporation source material.
以下、添削した図面に沿って、この発明の方法と駅首を
説明する。Hereinafter, the method and station head of the present invention will be explained along with the corrected drawings.
図は、この発明の一例を示したものであって、この具体
例にこの発明の方法と装置が限定されるものでないこと
はいうまでもない。The figure shows an example of the present invention, and it goes without saying that the method and apparatus of the present invention are not limited to this specific example.
第１図に例示した装置では、真空室（１）は、ベルン〜
ノ（２）にＪ、って気密に保たれている。真空室（１〉
は真空ポンプによって排気する。ベルジャ（２）には、
真空排気口（３）とともに、反応ガス導入口（４）を設
ける。また、ベルジャ（２）の内部には、蒸発原料物質
のハース（５）、ホ［１カソードプラズマガン（６）お
Ｊ、び高周波励起手段（７）とを設ける。被処理物（８
）は、保持手段（９）によって支持する。In the apparatus illustrated in FIG. 1, the vacuum chamber (1) is
ノ(2) and J are kept airtight. Vacuum chamber (1)
is evacuated by a vacuum pump. Bellja (2) has
A reaction gas inlet (4) is provided along with a vacuum exhaust port (3). Further, inside the bell jar (2), a hearth (5) for evaporating source material, a cathode plasma gun (6) and a high frequency excitation means (7) are provided. Object to be processed (8
) is supported by the holding means (9).
ホロカソードプラズマガンには、ＤＣ２０〜１００Ｖ、
１００〜１．０ＯＯＡ、また高周波による励起は、４０
０ＫｌｌＺ〜１００ Ｈｔｌｚ程度の条件を採用するこ
とが好ましい。被処理物基板には、ＤＣ３０〜１００Ｖ
の直流電圧を印加Ｊることもできる。For the hollow cathode plasma gun, DC20-100V,
100-1.0OOA, and high frequency excitation is 40
It is preferable to adopt conditions of approximately 0 KllZ to 100 Htlz. DC30-100V is applied to the substrate to be processed.
It is also possible to apply a DC voltage of J.
真空室の圧力は、通常のホ［１カソード法の場合の１０
−３〜１０−４Ｔｏｒｒよりも低い圧力とすることがで
きる。おおむね、１０〜１０’Ｔｏｒｒ稈度とするのが
好ましい。The pressure in the vacuum chamber is 10
The pressure can be lower than -3 to 10-4 Torr. Generally, it is preferable to set the culm degree to 10 to 10' Torr.
もらろん、蒸発源物質の種類、所望の薄膜の物性に応じ
てこれら条１′］に必ずしも限定されることなくハイブ
リッドイオンプレーティングを行うことができる。Of course, hybrid ion plating can be carried out without necessarily being limited to these methods 1' depending on the type of evaporation source material and the desired physical properties of the thin film.
高周波励起については、１−ＩＩｔｉ合、Ｃ結合のいず
れのものでもよく、さらにはたとえば、第２図に示した
ような被処理物の連続的移動手段を設けるなどして、ベ
ルジャの構造を適宜に変更することができる。Regarding high frequency excitation, either 1-IIti bond or C bond may be used.Furthermore, the structure of the bell jar may be modified as appropriate by providing means for continuously moving the object to be treated as shown in FIG. can be changed to .
５９人カスにＬＬ、アルゴン、ヘリウム、水素、酸素、
窒素、有機上ツマ−などの不活ヒ］、あるい（３１反応
゛１）１のガスの適宜なものを用いることかできる。３
ｉｔ： ７．：、導入ノｊスかなくとも蒸発物ｖ１を励
起し、イオン化号ることかできる。LL, argon, helium, hydrogen, oxygen, to 59 people.
An appropriate gas such as nitrogen, an inert gas such as an organic solvent, or the gas described in (31 Reaction 1) 1 can be used. 3
it: 7. :, the evaporated substance v1 can be excited and ionized even if the introduced gas is not used.
このハイブリッドイオンプレーティングにおいては、通
常のホ［１カソード法では蒸発＄１′ｆ子のイ」ン化率
かＩＩいどいわれているか、高周波励起を複合化Ｊるこ
とにＪ、って、プラズマ密麻かざらに高くイｆす、イオ
ン化率がさらに人きくイする。In this hybrid ion plating, in the normal cathode method, the ionization rate of evaporated $1'f electrons is lower than the ionization rate. The plasma density is much higher, and the ionization rate is even more appealing.
３：た高周波励起によって、Ｊ、り低Ｈ−条イ′１−ζ
゛、かつ安定に敢電を維持すること−ｂてきるので、ｎ
ｂ ｌｌ６ｔの品質は著しく向上し、均一性も増大する
。ボ［１カッ−Ｆ法の特長である効率・ｔ）＋も充分に
牛かりことかできる。3: By high-frequency excitation,
゛, and to maintain a stable power supply -b will come, so n
The quality of b ll6t is significantly improved and the uniformity is also increased. The efficiency t)+, which is a feature of the Bo [1 Ka-F method, can also be sufficiently calculated.
（発明の効果）
この発明のハイブリッドイオンプレーティングにＪ、っ
て、ホ【」カソードプラズマ法および高周波励起ｙ′プ
ラズマ法各々の方法によっては実現覆ることのできなか
った、イオンプレーティング反応の効率・１１、プラズ
マの安定・１ノ１、牛成覆る薄Ｉ６）の物性の均一・１
ノ１ど、その品質の向「乙１どの（０れ）こ効果が得ら
れる。(Effects of the invention) The hybrid ion plating of this invention has an efficiency of ion plating reaction that could not be achieved by the cathode plasma method and the high frequency excited Y' plasma method.・11. Stability of plasma ・1 no 1. Uniformity of physical properties of thin I6) ・1
No. 1, the effect of its quality can be obtained.
第１図および第２図は、この発明の方法と装置の例を示
した一ｂのである。
図中の番号は次のものを示している。
１・・・真空室
２・・・ベルジ（）
５・・・ハース
６・・・ホ［］カカソードプラズマ刀
ン７・・高周波励起手段
代理人 弁理士 四 ）Ｙ 利 大東 １
図
第 ２ 図FIGS. 1 and 2 are diagrams illustrating an example of the method and apparatus of the present invention. The numbers in the figure indicate the following. 1...Vacuum chamber 2...Berge () 5...Haas 6...Ho[]Cacathode plasma knife 7...High frequency excitation means agent Patent attorney 4) Y Tori Daito 1
Figure 2
Claims (2)
ンプレーティング方法において、ホロカソードプラズマ
によって蒸発源物質の蒸発とイオン化を行うとともに、
導入ガス、または蒸発物質の各々、もしくはこれら双方
を高周波電界により励起を行うことを特徴とするハイブ
リッドイオンプレーティング方法。(1) In the ion plating method in which a thin film is formed by ionizing and excitation of evaporated particles, the evaporation source material is evaporated and ionized by a hollow cathode plasma, and
A hybrid ion plating method characterized by exciting an introduced gas, an evaporated substance, or both using a high-frequency electric field.
料の蒸発源と；必要により設ける抵抗加熱または高周波
誘導加熱の蒸発手段と；ホロカソードプラズマガンと；
高周波励起の手段と；被処理物の保持と移動の手段とか
らなり、該ホロカソードプラズマガンによって蒸発源物
質の蒸発とイオン化を行い、かつ、被処理物と蒸発源物
質との間に設けた高周波励起手段によって蒸発粒子のイ
オン化励起を行うようにしたハイブリッドイオンプレー
ティング装置。(2) a vacuum chamber; an exhaust system; a gas introduction system; an evaporation source for the thin film forming material; an evaporation means of resistance heating or high-frequency induction heating provided as necessary; a hollow cathode plasma gun;
It consists of a means for high frequency excitation; a means for holding and moving the object to be treated; the hollow cathode plasma gun evaporates and ionizes the evaporation source material; and a means for holding and moving the object to be treated; A hybrid ion plating device that excites ionization of evaporated particles using high-frequency excitation means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61129453A JP2567843B2 (en) | 1986-06-04 | 1986-06-04 | Hybrid ion plating method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61129453A JP2567843B2 (en) | 1986-06-04 | 1986-06-04 | Hybrid ion plating method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62287066A true JPS62287066A (en) | 1987-12-12 |
| JP2567843B2 JP2567843B2 (en) | 1996-12-25 |
Family
ID=15009857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61129453A Expired - Lifetime JP2567843B2 (en) | 1986-06-04 | 1986-06-04 | Hybrid ion plating method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2567843B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01316455A (en) * | 1988-03-26 | 1989-12-21 | Kawasaki Steel Corp | Formation of film excellent in uniformity and adhesive strength at high speed |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100975A (en) * | 1979-01-23 | 1980-08-01 | Citizen Watch Co Ltd | Hcd type ion plating device |
| JPS5842771A (en) * | 1981-09-07 | 1983-03-12 | Sumitomo Electric Ind Ltd | Ion planting device |
| JPS6199670A (en) * | 1984-10-19 | 1986-05-17 | Jeol Ltd | Ion plating device |
-
1986
- 1986-06-04 JP JP61129453A patent/JP2567843B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100975A (en) * | 1979-01-23 | 1980-08-01 | Citizen Watch Co Ltd | Hcd type ion plating device |
| JPS5842771A (en) * | 1981-09-07 | 1983-03-12 | Sumitomo Electric Ind Ltd | Ion planting device |
| JPS6199670A (en) * | 1984-10-19 | 1986-05-17 | Jeol Ltd | Ion plating device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01316455A (en) * | 1988-03-26 | 1989-12-21 | Kawasaki Steel Corp | Formation of film excellent in uniformity and adhesive strength at high speed |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2567843B2 (en) | 1996-12-25 |
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