JPS62283897A - 化合物半導体単結晶の気相成長方法 - Google Patents

化合物半導体単結晶の気相成長方法

Info

Publication number
JPS62283897A
JPS62283897A JP12672386A JP12672386A JPS62283897A JP S62283897 A JPS62283897 A JP S62283897A JP 12672386 A JP12672386 A JP 12672386A JP 12672386 A JP12672386 A JP 12672386A JP S62283897 A JPS62283897 A JP S62283897A
Authority
JP
Japan
Prior art keywords
crystal
chamber
seed crystal
growth
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12672386A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0371400B2 (enExample
Inventor
Tomoji Yamagami
山上　智司
Yoshitaka Tomomura
好隆 友村
Masahiko Kitagawa
雅彦 北川
Shigeo Nakajima
中島　重夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12672386A priority Critical patent/JPS62283897A/ja
Publication of JPS62283897A publication Critical patent/JPS62283897A/ja
Publication of JPH0371400B2 publication Critical patent/JPH0371400B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP12672386A 1986-05-30 1986-05-30 化合物半導体単結晶の気相成長方法 Granted JPS62283897A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12672386A JPS62283897A (ja) 1986-05-30 1986-05-30 化合物半導体単結晶の気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12672386A JPS62283897A (ja) 1986-05-30 1986-05-30 化合物半導体単結晶の気相成長方法

Publications (2)

Publication Number Publication Date
JPS62283897A true JPS62283897A (ja) 1987-12-09
JPH0371400B2 JPH0371400B2 (enExample) 1991-11-13

Family

ID=14942278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12672386A Granted JPS62283897A (ja) 1986-05-30 1986-05-30 化合物半導体単結晶の気相成長方法

Country Status (1)

Country Link
JP (1) JPS62283897A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (enExample) * 1973-04-04 1974-12-12
JPS6143275U (ja) * 1984-08-17 1986-03-20 三洋電機株式会社 結晶成長装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129694A (enExample) * 1973-04-04 1974-12-12
JPS6143275U (ja) * 1984-08-17 1986-03-20 三洋電機株式会社 結晶成長装置

Also Published As

Publication number Publication date
JPH0371400B2 (enExample) 1991-11-13

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