JPS6227477B2 - - Google Patents

Info

Publication number
JPS6227477B2
JPS6227477B2 JP56026361A JP2636181A JPS6227477B2 JP S6227477 B2 JPS6227477 B2 JP S6227477B2 JP 56026361 A JP56026361 A JP 56026361A JP 2636181 A JP2636181 A JP 2636181A JP S6227477 B2 JPS6227477 B2 JP S6227477B2
Authority
JP
Japan
Prior art keywords
signal
inverter
transistor
circuit
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56026361A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57141097A (en
Inventor
Itsuo Sasaki
Hiroaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56026361A priority Critical patent/JPS57141097A/ja
Priority to US06/351,518 priority patent/US4441169A/en
Priority to DE19823206507 priority patent/DE3206507A1/de
Publication of JPS57141097A publication Critical patent/JPS57141097A/ja
Publication of JPS6227477B2 publication Critical patent/JPS6227477B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP56026361A 1981-02-25 1981-02-25 Storage circuit Granted JPS57141097A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56026361A JPS57141097A (en) 1981-02-25 1981-02-25 Storage circuit
US06/351,518 US4441169A (en) 1981-02-25 1982-02-23 Static random access memory having a read out control circuit connected to a memory cell
DE19823206507 DE3206507A1 (de) 1981-02-25 1982-02-24 Statischer direktzugriffspeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56026361A JPS57141097A (en) 1981-02-25 1981-02-25 Storage circuit

Publications (2)

Publication Number Publication Date
JPS57141097A JPS57141097A (en) 1982-09-01
JPS6227477B2 true JPS6227477B2 (en, 2012) 1987-06-15

Family

ID=12191346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56026361A Granted JPS57141097A (en) 1981-02-25 1981-02-25 Storage circuit

Country Status (3)

Country Link
US (1) US4441169A (en, 2012)
JP (1) JPS57141097A (en, 2012)
DE (1) DE3206507A1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013524396A (ja) * 2010-04-02 2013-06-17 アルテラ コーポレイション ソフトエラーアップセット不感性を有するメモリ要素

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3267974D1 (en) * 1982-03-17 1986-01-30 Itt Ind Gmbh Deutsche Electrically erasable memory matrix (eeprom)
EP0089397B1 (de) * 1982-03-24 1985-12-04 Deutsche ITT Industries GmbH Integrierte Speichermatrix mit nichtflüchtigen, umprogrammierbaren Speicherzellen
US4792924A (en) * 1985-01-16 1988-12-20 Digital Equipment Corporation Single rail CMOS register array and sense amplifier circuit therefor
US4825409A (en) * 1985-05-13 1989-04-25 Wang Laboratories, Inc. NMOS data storage cell for clocked shift register applications
DE3684249D1 (en) * 1985-12-06 1992-04-16 Siemens Ag Gate array anordnung in cmos-technik.
DE3714813A1 (de) * 1987-05-04 1988-11-17 Siemens Ag Cmos-ram speicher auf einer gate array-anordnung
JPH0482087A (ja) * 1990-07-23 1992-03-16 Matsushita Electron Corp 半導体メモリ回路
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路
US5898619A (en) * 1993-03-01 1999-04-27 Chang; Ko-Min Memory cell having a plural transistor transmission gate and method of formation
US5623440A (en) * 1993-10-15 1997-04-22 Solidas Corporation Multiple-bit random access memory cell
US5708598A (en) * 1995-04-24 1998-01-13 Saito; Tamio System and method for reading multiple voltage level memories
US5831896A (en) * 1996-12-17 1998-11-03 International Business Machines Corporation Memory cell
GB2384092A (en) * 2002-01-14 2003-07-16 Zarlink Semiconductor Ab Low power static random access memory
US7532536B2 (en) * 2003-10-27 2009-05-12 Nec Corporation Semiconductor memory device
US7321504B2 (en) * 2005-04-21 2008-01-22 Micron Technology, Inc Static random access memory cell
EP1791132B1 (en) * 2005-11-25 2010-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for operating the same
JP4661888B2 (ja) * 2008-03-11 2011-03-30 ソニー株式会社 半導体記憶装置およびその動作方法
US20110205787A1 (en) * 2008-10-22 2011-08-25 Nxp B.V. Dual-rail sram with independent read and write ports
US20150294738A1 (en) * 2014-04-15 2015-10-15 International Business Machines Corporation Test structure and method of testing a microchip

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49139534U (en, 2012) * 1973-03-31 1974-12-02
JPS5345939A (en) * 1976-10-07 1978-04-25 Sharp Corp Ram circuit
JPS5932123Y2 (ja) * 1977-06-27 1984-09-10 ニチコン株式会社 貫通電極シ−ルド型電解コンデンサ
JPS59915B2 (ja) * 1979-11-29 1984-01-09 富士通株式会社 メモリ回路
JPS56114196A (en) * 1980-02-13 1981-09-08 Sharp Corp Ram circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013524396A (ja) * 2010-04-02 2013-06-17 アルテラ コーポレイション ソフトエラーアップセット不感性を有するメモリ要素
JP2015181084A (ja) * 2010-04-02 2015-10-15 アルテラ コーポレイションＡｌｔｅｒａ Ｃｏｒｐｏｒａｔｉｏｎ ソフトエラーアップセット不感性を有するメモリ要素

Also Published As

Publication number Publication date
DE3206507C2 (en, 2012) 1988-10-27
JPS57141097A (en) 1982-09-01
US4441169A (en) 1984-04-03
DE3206507A1 (de) 1982-10-14

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