JPS62274684A - Semiconductor device - Google Patents

Abstract

PURPOSE:To improve the reliability and workability while making alignment of one end of a semiconductor chip with another end of a mount to be in parallel with each other not to be retracted from the end of mount by a method wherein a plated electrode is provided with an end flush with another end of semiconductor chip as well as a protrusion with a surface in parallel with the end of semiconductor chip. CONSTITUTION:When a semiconductor laser chip 1 is loaded upon a mount 3 through the intermediary of a solder member 2 to be heated up to the melting point of the solder member 2, the solder member 2 is melted down. At this time, an end 24B in parallel with another end 24A of a protrusion 24 of a plated electrode 23 can be bonded closely to the other end 3A of a mount 3 so that the oscillating end 1A of semiconductor laser chip 1 may be aligned with the end 3A of mount 3 to be in parallel therewith not to be retracted therefrom. Through these procedures, the semiconductor chip 1 and the mount 3 can be aligned with good accuracy while improving the reliability, workability and yield in case of assembling a semiconductor device.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a semiconductor device in which a semiconductor chip is bonded to a mount using a solder material.

Hereinafter, a description will be given by taking as an example a junction-down type semiconductor device that is bonded with the bonding side facing down.

[Conventional technology]

FIG. 4 is a perspective view showing the structure of a conventional junction-down type semiconductor chip, for example a semiconductor laser chip. In this figure, a semiconductor laser chip 1 includes a semiconductor substrate 11. Lower cladding layer 12° active layer 13. Upper cladding layer 14. It is composed of a contact layer 15, and a back Ti electrode 21 is attached to the semiconductor substrate 11 side, and a front electrode 22 is attached to the contact layer 15 side. A contact is formed at the active layer 13 ffi. In the junction-down type semiconductor laser chip 1, in order to prevent soldering caused by the solder material when assembled with the junction facing down, a metal foil electrode 23 is further formed on the surface electrode 22 to reduce the height of the electrode. Let's make it happen.

FIG. 5 is a perspective view showing a state in which the conventional jump-down type semiconductor laser chip 1 is mounted on a mount l-3. The semiconductor laser chip 1 is bonded to the mount 3 via the solder material 2 with the bonding side facing down, that is, the plating electrode 23 facing down. When bonding, the oscillation end face 1A of the semiconductor laser chip 1 is attached to the end face of the mount 3 (oscillation end face 1A).
Surface to be aligned with A) It is desirable to position it so that it is on the same plane as 3A. If the oscillation end face 1A of the semiconductor laser chip 1 is bonded so as to be set back from the end face 3A of the mount 3, especially when assembled in a junction-down manner, there is a problem that the laser beam will be eclipsed by the mount 3. Conversely, if the oscillation end face 1A of the semiconductor laser chip 1 is bonded so as to protrude from the end face 3A of the mount 3, there is a problem that the heat dissipation effect becomes worse.

[Problem that the invention seeks to solve]

By the way, in conventional semiconductor devices, the alignment between the oscillation end face 1A of the semiconductor laser chip 1 and the end face 3A of the mount 3 was performed only by visual inspection, so both end faces IA and 3A were aligned in the bow so that they were located on the same plane. It is very difficult to
For example, as shown in FIG. 6, the semiconductor laser chip 1 may not be bonded parallel to the mount 3, or as shown in FIG. As shown, there were many problems in reliability and workability during assembly, such as the semiconductor laser chip 1 protruding from the mount 3 and being adhered.

This invention was made to solve the above-mentioned problems, and it is possible to easily align the end face of the semiconductor chip so that it is parallel to the end face of the mount and on the same plane so that it does not retreat. The object of the present invention is to obtain a semiconductor device that can perform the following steps.

[Means for solving problems]

In the semiconductor device according to the present invention, a plating electrode for adhering a mount is provided with a protrusion having an end surface flush with the end surface of the semiconductor chip and a surface parallel to the end surface.

[Effect]

In this invention, when bonding the semiconductor chip to the mount, the end surface of the semiconductor chip is parallel to the end surface of the mount by bringing the surface parallel to the end surface of the protrusion of the plated electrode into close contact with the end surface of the mount. , and is positioned so that it does not move backward.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings. In addition, in the description of this embodiment, the description of parts that overlap with the conventional description will be omitted as appropriate.

FIG. 1 is a perspective view showing a semiconductor chip, such as a semiconductor laser chip, constituting a semiconductor device according to an embodiment of the present invention. In this figure, reference numeral 24 denotes an end face 24A that is flush with the oscillation end face 1A of the semiconductor laser chip 1;
This edge? This is a protrusion having a surface of 2 dB parallel to lA.

FIG. 2 is a perspective view of a semiconductor device according to an embodiment of the present invention, which is constructed using the semiconductor laser chip 1 shown in FIG. That is, when the semiconductor laser chip 1 shown in FIG. 1 is placed on the mount 3 via the solder material 2 and heated to the melting point of the solder material 2, the solder material 2 is melted. At this time, by bringing the surface 24B parallel to the end surface 24A of the protrusion 24 of the plated electrode 23 into close contact with the end surface 3A of the mount 3, the oscillation end surface 1A of the semiconductor laser chip 1 is parallel to the end surface 3A of the mount 3. In addition, the position can be adjusted so as not to move backward.

Further, in the embodiment shown in FIG. 2, the semiconductor laser chip 1
The oscillation end surface 1A of the mount 3 protrudes forward from the end surface 3A of the mount 3 by the thickness of the protrusion 24 of the plated electrode 23, but in the case of this embodiment, the protrusion 24 is completely covered by the mount 3 and the solder material 2. Since they are bonded, the effect of heat release during driving of the semiconductor laser is not reduced in any way.

FIG. 3 is a perspective view of a semiconductor device showing another embodiment of the invention, which is constructed using the semiconductor laser chip 1 shown in FIG. 1. In the embodiment shown in FIG. 3, the end surface 3A of the mount 3, which is the surface to be aligned with the oscillation end surface 1A of the semiconductor laser chip 1, is modified. That is, a rectangular parallelepiped recess 3D having a surface 3B parallel to the end surface 3A of the mount 3 is provided at the intersection of the end surface 3A of the mount 3 and a perpendicular surface 3C. When bonding the semiconductor laser chip 1 to the mount 3, a surface 2 dB parallel to the end surface 24A of the protrusion 24 of the plating electrode 23 is attached to the mount l-
By bringing the concave portion 3D of No. 3 into close contact with the surface 3B parallel to the end surface 3A of the mount 3, the oscillation end surface 1A of the semiconductor laser chip 1 can be made parallel to the end surface 3A of the mount 3.

In addition, in the embodiment shown in FIG. 3, by matching the dimensions of the recess 3D of the mount 3 with the thickness of the protrusion 24 of the plating electrode 23, the alignment of the semiconductor laser chip 1 and the mount 3 in the front, back, left, and right directions can be achieved. This can be done with extreme precision.

In the above embodiment, the case where the semiconductor laser chip 1 is bonded with the bond side down is shown, but even if the semiconductor laser chip 1 is bonded with the bond side up, the plating electrode 2 is placed on the back electrode 21.
It goes without saying that a similar semiconductor device can be formed by providing the protrusion 3 and the protrusion 24.

〔Effect of the invention〕

As explained above, the present invention provides a protrusion on a plating electrode formed on a front surface electrode or a back surface electrode of a semiconductor chip, which has an end surface that is flush with the end surface of the semiconductor chip and has a surface that is parallel to this end surface. Since the projection is provided with a parallel surface, the end surface of the protrusion and the surface parallel to the end surface of the mount can be brought into close contact with the end surface of the mount, thereby making it possible to accurately align the semiconductor chip and the mount, thereby improving the reliability of the assembly of semiconductor devices. and workability 2. In particular, there are advantages in that the yield can be significantly improved.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a semiconductor laser chip constituting a semiconductor device which is an embodiment of the present invention, FIG. 2 is a perspective view of a semiconductor device which is an embodiment of the invention, and FIG. A perspective view of a semiconductor device showing another embodiment, FIG. 4 is a perspective view showing the structure of a conventional junction down type semiconductor laser chip, and FIG. 5 shows a conventional junction down type semiconductor laser chip mounted on a mount. 6 is a perspective view showing a state in which the semiconductor laser chip is not bonded parallel to the mount, and FIG. 7 is a perspective view showing a state in which the semiconductor laser chip is retreated from the mount and bonded. , FIG. 8 is a perspective view showing a state in which the semiconductor laser chip protrudes from the mount and is bonded. In the figure, 1 is a semiconductor laser chip, 1A is an oscillation end surface, 2 is a solder material, 3 is a mount 15. 3A is an end surface of a mount, 3B is a surface parallel to the end surface of the mount, 21 is a back electrode,
22 is a front i-electrode, 23 is a plating electrode, 24 is a protrusion, 2
dA is an end surface, and 24B is a parallel surface. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masuo Oiwa (2 others) Figure 1 24B, Heicho η plane Figure 2 Figure 3 Figure 3B, Makunto groove surface and 12〒σ plane Figure 4 Figure 6 Figure 7 Figure 8 Procedural amendment document ([4 L 61 12 d 2 Showa year/month/day/month/year/month/year/month/year/month/year/month/year/year/month/day/year/month/year/year/month/year/year/year/month/day.relationshipwiththecaseofthepersonwhomakesthe amendment Patent applicant address: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo) Name (601) Mitsubishi Electric Corporation Representative Shiki
Moriya 4, Agent address: Mitsubishi Electric Corporation, 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (7375) Masuo Oiwa, patent attorney. (Contact information 03 (213>3421 Patent Department) 5, column for detailed description of the invention in the subject specification and drawing 6, contents of amendment (1) "In the second line of page 5 of the specification," ”. Correct it as “by extension.” (2) Similarly, in page 8, line 4, r should be corrected to “by extension.” Correct. That's all.

Claims (1)

[Claims] In a semiconductor device in which a plating electrode formed on a front surface electrode or a back surface electrode of a semiconductor chip is bonded to a mount via a solder material, the plating electrode has an end surface that is flush with the end surface of the semiconductor chip; 1. A semiconductor device comprising: a protrusion having a surface parallel to the end surface of the mount; and a surface of the protrusion parallel to the end surface of the mount is closely bonded to the end surface of the mount.