JPS622715B2 - - Google Patents

Info

Publication number
JPS622715B2
JPS622715B2 JP56044774A JP4477481A JPS622715B2 JP S622715 B2 JPS622715 B2 JP S622715B2 JP 56044774 A JP56044774 A JP 56044774A JP 4477481 A JP4477481 A JP 4477481A JP S622715 B2 JPS622715 B2 JP S622715B2
Authority
JP
Japan
Prior art keywords
layer
type
active layer
cladding layer
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56044774A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57159082A (en
Inventor
Toshiro Hayakawa
Junko Takagi
Naotaka Ootsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP56044774A priority Critical patent/JPS57159082A/ja
Publication of JPS57159082A publication Critical patent/JPS57159082A/ja
Publication of JPS622715B2 publication Critical patent/JPS622715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56044774A 1981-03-25 1981-03-25 Semiconductor laser element Granted JPS57159082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56044774A JPS57159082A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56044774A JPS57159082A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS57159082A JPS57159082A (en) 1982-10-01
JPS622715B2 true JPS622715B2 (enExample) 1987-01-21

Family

ID=12700755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56044774A Granted JPS57159082A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57159082A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208887A (ja) * 1983-05-13 1984-11-27 Nec Corp 半導体発光素子
JPS6175584A (ja) * 1984-09-20 1986-04-17 Nec Corp 半導体レ−ザ
JPS61163689A (ja) * 1985-01-14 1986-07-24 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57159082A (en) 1982-10-01

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