JPS62271429A - Ｍｏｓ型電界効果トランジスタの製造方法 - Google Patents

Ｍｏｓ型電界効果トランジスタの製造方法

Info

Publication number
JPS62271429A
JPS62271429A JP62078250A JP7825087A JPS62271429A JP S62271429 A JPS62271429 A JP S62271429A JP 62078250 A JP62078250 A JP 62078250A JP 7825087 A JP7825087 A JP 7825087A JP S62271429 A JPS62271429 A JP S62271429A
Authority
JP
Japan
Prior art keywords
mask
alignment
pattern
mask alignment
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62078250A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142128B2 (OSRAM
Inventor
Mitsuharu Kodaira
小平　光治
Keiko Hayashi
林　けい子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62078250A priority Critical patent/JPS62271429A/ja
Publication of JPS62271429A publication Critical patent/JPS62271429A/ja
Publication of JPH0142128B2 publication Critical patent/JPH0142128B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP62078250A 1987-03-31 1987-03-31 Ｍｏｓ型電界効果トランジスタの製造方法 Granted JPS62271429A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62078250A JPS62271429A (ja) 1987-03-31 1987-03-31 Ｍｏｓ型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62078250A JPS62271429A (ja) 1987-03-31 1987-03-31 Ｍｏｓ型電界効果トランジスタの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP59183892A Division JPS6074435A (ja) 1984-09-03 1984-09-03 Ｍｏｓ型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS62271429A true JPS62271429A (ja) 1987-11-25
JPH0142128B2 JPH0142128B2 (OSRAM) 1989-09-11

Family

ID=13656752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62078250A Granted JPS62271429A (ja) 1987-03-31 1987-03-31 Ｍｏｓ型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS62271429A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02213117A (ja) * 1989-02-14 1990-08-24 Matsushita Electron Corp 半導体装置のマスク合せ方法
JPH04294329A (ja) * 1991-03-22 1992-10-19 G T C:Kk 液晶表示装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02213117A (ja) * 1989-02-14 1990-08-24 Matsushita Electron Corp 半導体装置のマスク合せ方法
JPH04294329A (ja) * 1991-03-22 1992-10-19 G T C:Kk 液晶表示装置およびその製造方法

Also Published As

Publication number Publication date
JPH0142128B2 (OSRAM) 1989-09-11

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