JPS62270777A - プラズマｃｖｄ装置 - Google Patents
プラズマｃｖｄ装置Info
- Publication number
- JPS62270777A JPS62270777A JP11315686A JP11315686A JPS62270777A JP S62270777 A JPS62270777 A JP S62270777A JP 11315686 A JP11315686 A JP 11315686A JP 11315686 A JP11315686 A JP 11315686A JP S62270777 A JPS62270777 A JP S62270777A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- gas
- cylindrical
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 24
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000007664 blowing Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315686A JPS62270777A (ja) | 1986-05-16 | 1986-05-16 | プラズマｃｖｄ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315686A JPS62270777A (ja) | 1986-05-16 | 1986-05-16 | プラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62270777A true JPS62270777A (ja) | 1987-11-25 |
| JPH0411628B2 JPH0411628B2 (enrdf_load_stackoverflow) | 1992-03-02 |
Family
ID=14604981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11315686A Granted JPS62270777A (ja) | 1986-05-16 | 1986-05-16 | プラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62270777A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0347971A (ja) * | 1989-04-20 | 1991-02-28 | Alps Electric Co Ltd | プラズマｃｖｄによる合成方法 |
| JP2001240971A (ja) * | 2000-03-01 | 2001-09-04 | Kobe Steel Ltd | 薄膜形成装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4252702B2 (ja) * | 2000-02-14 | 2009-04-08 | 株式会社荏原製作所 | 反応副生成物の配管内付着防止装置及び付着防止方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391665A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
-
1986
- 1986-05-16 JP JP11315686A patent/JPS62270777A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391665A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0347971A (ja) * | 1989-04-20 | 1991-02-28 | Alps Electric Co Ltd | プラズマｃｖｄによる合成方法 |
| JP2001240971A (ja) * | 2000-03-01 | 2001-09-04 | Kobe Steel Ltd | 薄膜形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0411628B2 (enrdf_load_stackoverflow) | 1992-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3925566B2 (ja) | 薄膜形成装置 | |
| JP2720420B2 (ja) | 成膜／エッチング装置 | |
| JP4394073B2 (ja) | 処理ガス導入機構およびプラズマ処理装置 | |
| EP0095887B2 (en) | Apparatus for plasma chemical vapour deposition | |
| KR100375343B1 (ko) | 성막처리장치및성막처리방법 | |
| KR100235362B1 (ko) | 플라즈마 화학 기상 성장법에 의해 비결정 탄소 박막을 형성하기 위한 방법 및 장치(Method and apparatus for forming amorphous carbon thin film by plasma chemical vapor deposition) | |
| KR100727733B1 (ko) | 성막 장치 | |
| JPH04123257U (ja) | バイアスｅｃｒプラズマｃｖｄ装置 | |
| WO2001009407A1 (fr) | Materiau au carbure de silice, equipement de traitement de semi-conducteurs, et procede d'elaboration de materiau au carbure de silice | |
| EP0364215A2 (en) | Plasma etching apparatus | |
| US4633812A (en) | Vacuum plasma treatment apparatus | |
| JPH0568096B2 (enrdf_load_stackoverflow) | ||
| JP2000328248A (ja) | 薄膜形成装置のクリーニング方法及び薄膜形成装置 | |
| JPS62270777A (ja) | プラズマｃｖｄ装置 | |
| JP2005191023A (ja) | プラズマ処理装置 | |
| JPH0639709B2 (ja) | プラズマｃｖｄ装置 | |
| TW202342806A (zh) | 具有加熱噴頭的噴頭組件 | |
| JPS62218577A (ja) | 気相反応装置用電極 | |
| JPH0362923A (ja) | プラズマｃｖｄ装置用電極構造 | |
| JP3259452B2 (ja) | プラズマｃｖｄ装置に用いる電極及びプラズマｃｖｄ装置 | |
| JPS643338B2 (enrdf_load_stackoverflow) | ||
| WO2001006032A1 (fr) | Procede de formation d'un film de tungstene metallique | |
| JP3706572B2 (ja) | 金属膜作製装置のクリーニング方法及び金属膜作製装置 | |
| KR0149168B1 (ko) | 막형성 방법 및 막형성장치 | |
| KR20040045750A (ko) | 고밀도 플라즈마식 화학기상증착장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |