JPS62270766A - Vapor deposition device and method using said device - Google Patents

Abstract

PURPOSE:To prevent the contamination of an incidence window and to vapor-deposit a target material on a substrate having a stepped part with excellent coverage by arranging a high-electric potential electrode on the inside of the light beam incidence window, and scan-radiating the light beam on the target when the target material is vaporized and deposited on an IC substrate, etc., by using the light beam. CONSTITUTION:The IC substrate 13 to be vapor-deposited and the target 12 of the vapor deposition material are placed in a reduced-pressure vessel 6, the inside of the vessel 6 is evacuated by an exhauster 7, and then a small amt. of an inert gas 4 such as Ar and He is supplied. The light beam 10 such as CO2 laser is condensed by a lens 11, and radiated from the light inlet window 1 of the vessel 6 while scanning the surface of the target 12 in the direction A. The generated particles of the vaporized target material 12 are deposited on the surface of the substrate 13. In this case, the high-potential electrode 3 is provided in the vicinity of the light inlet window 1, hence the vaporized particles are repulsed by the electrode, and the deposition of the particles on the incidence window and the contamination of the window are prevented. Since the light is radiated while scanning the surface of the target 12, the vapor deposition even on the substrate having a stepped part can be performed with excellent coverage.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention Field of Industrial Application The present invention relates to a vapor deposition apparatus and a vapor deposition method using the same. More specifically, the present invention relates to a technique for forming a thin film by photothermal physical vapor deposition (PVD), which utilizes discharge and light irradiation simultaneously.

Conventional technology CVD technology and PVD that use light or discharge
Various techniques are known. However, the drawback of conventional CVD and PVD devices that use light is that the light introduction window used at the edge of the stone that introduces light into the vacuum container becomes dirty during thin film formation, resulting in a decrease in light transmittance. To solve this problem, methods have been used, such as installing a mirror in the decompression chamber to prevent thin film materials from adhering to the direct light introduction window, or spraying inert gas onto the light introduction window. However, in the case of mirrors, this is not a fundamental solution because the surface of the mirror is contaminated with thin film material, resulting in poor reflectance, and if inert gas is sprayed, high vacuum cannot be obtained.

Therefore, as a means to solve the above-mentioned drawbacks, the present inventor's "thin film forming apparatus and thin film manufacturing method using the same" (
Patent Application No. 60-62524) has been filed.

Problems to be Solved by the Invention However, in the method of the invention, since vapor deposition is performed while irradiating the target with focused light, the IC
When a metal thin film is deposited on a substrate with steps on its surface, such as a substrate, the coverage is poor and wire breaks are likely to occur after the wiring pattern is formed.

The present invention prevents contamination of the light introduction window that conventionally occurs during vapor deposition in a vapor deposition apparatus using a light beam, improves coverage characteristics, and improves the continuous use time of the apparatus or the operation of the apparatus. This aims to improve the deposition rate and the quality of the deposited film.

Means for Solving the Problems In view of the drawbacks of the conventional devices described above, the present invention provides a discharge electrode near the light introduction window, ionizes the thin film material fine particles that have come near the light introduction window by discharge, and further increases the electric field. By trapping the target, it prevents contamination of the light introduction window.In addition, an optical system is installed to condense the light from an external light source and irradiate it while scanning the target surface, greatly expanding the evaporation area of the target. This aims to improve the coverage of the deposition substrate surface.

Function Generally, when forming a deposited film using an original beam, the light beam is introduced into a vacuum container through a light introduction window, and the vapor deposition material (target) is heated and evaporated in the vacuum container with this light energy, and the substrate is heated and evaporated. Although surface deposition methods are used, these evaporated particles naturally also approach the light introduction window.

Therefore, by installing a glow discharge electrode to which a voltage is applied near the light introduction window in advance, the approaching reactive gas and fine particles are ionized by glow discharge and trapped in the electrode, thereby preventing contamination of the light introduction window. It is possible to prevent this and ensure an optical path when introducing light.

On the other hand, when evaporating a target with a light beam, if the light beam is focused on one point, it is possible to selectively evaporate only the vicinity of that part, but in this case, the evaporation angle with respect to the substrate is constant, and the coverage will be significantly worse. Therefore, by scanning and irradiating the target surface with a light beam, it is possible to indirectly change the deposition angle with respect to the substrate surface, thereby improving coverage.

EXAMPLE An example of the present invention will be described below with reference to FIGS. 1 and 2. For example, when performing laser beam evaporation, at least a light introduction window 1, a substrate holder 2. Discharge electrode 3. In a thin film forming apparatus having a reduced pressure container 6 equipped with a gas inlet 4 and an exhaust port 5, an exhaust device 7 for exhausting gas in the reduced pressure container 6, an external light source 8, and a discharge power source 9, the inside of the reduced pressure container is After exhausting the gas, a target 12 made of a thin film material is irradiated using a light beam 1o (for example, light from a Co2 laser, YAG laser, ruby laser, or other outside lamp, etc., condensed using a lens 11). When evaporating and forming a thin film on a substrate 13 such as a semiconductor, a direct current or alternating current (including high frequency current) voltage is applied to the discharge wire 3 near the light introduction window 1 in advance, and the approaching thin film material is The evaporated fine particles are ionized by electric discharge, and by keeping the electric potential of the discharge electrode 3 positive, ions approaching the light introduction window are repelled and trapped in a negatively charged part (for example, a substrate). By doing so, contamination of the light introduction window 1 due to evaporated matter can be largely covered.

Furthermore, in order to scan and irradiate the surface of the large-area target 12 with a focused light beam, a mechanism (original beam scanning mechanism 18) is installed to change the angle of the mirror 16 with respect to the optical axis using a stepping motor 17 or the like. , IC is produced by heating and evaporating the target with a light beam while scanning the light beam vertically and horizontally according to the deposition speed during vapor deposition.
A deposited thin film can be formed with good coverage on a substrate with surface steps such as a substrate. In FIG. 1, irradiation is performed while scanning in the range indicated by arrow A.

Note that at this time, if a small amount of inert gas such as τ or He is introduced into the chamber, the discharge can be easily stabilized. It goes without saying that if vapor deposition is performed while introducing a reactive gas, a vapor deposited film accompanied by a plasma reaction can be obtained. In addition, in the case of Figure 1, the electrodes are installed on the optical path, so in order for the light beam to pass through, the electrodes must be arranged in a grid pattern, but in the type of Figure 2, the discharge electrode 14 and 15 are facing each other and do not obstruct the optical path, so they do not need to be in a grid shape.

In the case of FIG. 2, a mechanism for changing the angle of the lens 11 with respect to the optical axis of the light source may be installed as the light beam scanning mechanism.

Effects of the Invention As described above, by using the vapor deposition apparatus of the present invention and the vapor deposition method using the same, it is possible to significantly reduce contamination of the light introduction window when forming a vapor deposited film in light beam vapor deposition.
This method is highly effective in industries that require high-quality deposited films because it can improve the continuous operating time of the equipment or improve the operating rate of the equipment, and it can also greatly improve the coverage of the deposited film.

[Brief explanation of the drawing]

FIGS. 1 and 2 are schematic configuration diagrams for explaining a thin film forming apparatus and a thin film forming method using the same in an embodiment of the present invention. FIG. 1 is an example using a grid electrode, and FIG. An example using counter electrodes is shown. 1.24...Light introduction window, 2,27...
Substrate holding part, 3, 14, 15.23... Discharge electrode, 6°28... Exhaust port, 6, 21...
・・Reducing pressure container, 7p/°゛・exhaust device, 8,3o...
...Light source, 9,31...Discharge power supply, 18.
...Light beam scanning mechanism. Name of agent: Patent attorney Toshio Nakao and 1 other person1-
Ichimaru Minoiri 2 2-°Komiyakatakebu 3--Group electric use f class')---f"1 fathom), Tsu 5-ichiichiri FXυ 11---Less

Claims (1)

[Claims] (1) At least a light introduction window, a substrate holder, a discharge electrode,
A reduced pressure container equipped with a gas inlet and an exhaust port, an exhaust device for exhausting the gas in the reduced pressure container, an external light source, a discharge power source, and a target surface that is scanned by condensing the light from the external light source. A vapor deposition device with an optical system that irradiates while (2) The vapor deposition apparatus according to claim 1, wherein the external light source emits laser light. (3) The vapor deposition apparatus according to claim 1, wherein the grid-shaped discharge electrode is installed near the light introduction window. (4) At least a light introduction window, a substrate holder, a discharge electrode,
A vacuum vessel equipped with a gas inlet and an exhaust port, an exhaust device for exhausting the gas in the vacuum vessel, an external light source, a discharge power source, and the light from the external light source are focused while scanning the target surface. Using a vapor deposition apparatus with an optical system capable of irradiation, after exhausting the gas in the reduced pressure container in advance, the focused light is introduced through the light introduction window and scanned while irradiating and heating the target surface to evaporate and discharge. A vapor deposition method using a vapor deposition apparatus that forms a vapor deposition film on the surface of a substrate placed in a holding part. (5) A vapor deposition method using the vapor deposition apparatus according to claim 4, in which the potential of the discharge electrode near the light introduction window is set higher than the potential of other electrodes. (6) A vapor deposition method using the vapor deposition apparatus according to claim 5, in which the potential of the substrate is further set to be the lowest in the vacuum container. (7) A vapor deposition method using the vapor deposition apparatus according to claim 6, in which the potential of the discharge electrode near the light introduction window is set higher than the potential of other electrodes.