JPS5948939A - Method and apparatus for forming film - Google Patents

Method and apparatus for forming film

Info

Publication number
JPS5948939A
JPS5948939A JP15892882A JP15892882A JPS5948939A JP S5948939 A JPS5948939 A JP S5948939A JP 15892882 A JP15892882 A JP 15892882A JP 15892882 A JP15892882 A JP 15892882A JP S5948939 A JPS5948939 A JP S5948939A
Authority
JP
Japan
Prior art keywords
substrate
film
current
vapor
vapor flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15892882A
Other languages
Japanese (ja)
Inventor
Masaki Shintani
正樹 新谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Nippon Victor KK
Original Assignee
Victor Company of Japan Ltd
Nippon Victor KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd, Nippon Victor KK filed Critical Victor Company of Japan Ltd
Priority to JP15892882A priority Critical patent/JPS5948939A/en
Publication of JPS5948939A publication Critical patent/JPS5948939A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain the excellent film without depending upon the shape of a substrate by irradiating excitation energy to a vapor current when the vapor current is made to hit against the substrate and an evaporated substance is attached on the film. CONSTITUTION:The substrates 20 are fitted to a holder 11, an Al alloy 21 is entered in a vessel 12, and a chamber 10 is evacuated to a high degree through a valve 13. The alloy 21 is heated and melted to manufacture the vapor current while an electron accelerator B is worked in a flying process of the current to discharge electron rays, electrons are made collide with vapor particles, and the current is changed into a vapor current having high energy as a whole. When the vapor current having high energy reaches the substrate 20, it moves on the surface at mobility larger than the normal rate, and a uniform crystalline nucleus is generated, and grows in the equal directions without depending upon the shape of the substrate. Accordingly, the excellent film 24 is also obtained in the vertical stepped-difference section of the connecting window of an SiO2 film 23 on a wafer 22.

Description

【発明の詳細な説明】 本発明は膜形成法及び膜形成装置に係り、例えば半導体
素子の製造に際しての配線膜等を形成する際に、着膜す
る蒸発物質に電子線等の励起エネルギーを照射すること
により、着膜が極めてスムーズに、すなわち被着膜部に
段差があるような部分でも着膜が綺麗に行なえるものと
なる膜形成法及び膜形成装置を提供することを目的とす
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a film forming method and a film forming apparatus, and includes, for example, irradiating excitation energy such as an electron beam to an evaporated substance to be deposited when forming a wiring film, etc. in the manufacture of semiconductor elements. It is an object of the present invention to provide a film forming method and a film forming apparatus that allow the film to be deposited extremely smoothly, that is, even on areas where there are steps in the deposited film portion, the film can be deposited neatly.

例えば、半導体素子の微細化に伴ない、特に段差形状の
ある部分における配線膜被覆が問題となっている。すな
わち、半導体素子製造プロセスにおける配線膜形成工程
は、アルミニウム又はアルミニウムー合金等の素材を真
空蒸着法やスパッタ法によって基板上に耐着させること
によって行なわれている。例えば、第1図に示すような
真空蒸着装置1の基板ホルダー2に基板3を取り利け、
アルミニウム等の蒸発源物質4よシ該粒子を蒸発させて
、基板3表面に′蒸着させて膜を形成している。
For example, with the miniaturization of semiconductor elements, wiring film coverage has become a problem, particularly in portions with stepped shapes. That is, the wiring film forming step in the semiconductor device manufacturing process is carried out by depositing a material such as aluminum or an aluminum alloy onto a substrate by vacuum evaporation or sputtering. For example, a substrate 3 is placed in a substrate holder 2 of a vacuum evaporation apparatus 1 as shown in FIG.
The particles are evaporated using an evaporation source material 4 such as aluminum and deposited on the surface of the substrate 3 to form a film.

しかし、このようにして形成される膜は、膜の形成され
るべき基板3が、例えば第2図に示す如く、段差形状の
ある場合には、すなわちウェハー5面一上にコンタクト
ホール等の形成されている酸化膜6の構成されているよ
うなものである場合には、酸化膜6の平担面部上に形成
される部分の配線膜71の厚みdlに対して、傾斜部上
に形成される配線膜72の厚みd2が極端に薄くなった
り、さらにはコンタクトホールの部分に形成される配線
膜73の部分と傾斜部上に形成される配線膜72の部分
との境界部分に亀裂が生じる等の傾向があり、配線膜が
断線しやすく、素子の信頼性や製造歩留りを悪くしてい
る。その為、配線膜の被覆率丸を上げる為、傾斜部のテ
ーパー角θを小さく(11 したり、あるいは着膜材料の入射角をかえる等の方法が
提案されているが、未だ充分効果的な手段は開発される
に至っていない。特に、半導体素子の高密度化に伴ない
、コンタクトホール等段差部のある部分では垂直壁にな
らざるを得なくなり、配線膜形成が良好に行なえなくな
る。
However, when the substrate 3 on which the film is to be formed has a stepped shape, as shown in FIG. In the case where the oxide film 6 is structured as shown in FIG. The thickness d2 of the wiring film 72 becomes extremely thin, and cracks occur at the boundary between the part of the wiring film 73 formed in the contact hole and the part of the wiring film 72 formed on the slope. There is a tendency for the wiring film to be easily disconnected, which deteriorates the reliability and manufacturing yield of the device. Therefore, in order to increase the coverage rate of the wiring film, methods have been proposed such as reducing the taper angle θ of the inclined part (11) or changing the incident angle of the coating material, but these methods are still not fully effective. No means have yet been developed.Particularly, as the density of semiconductor devices increases, portions with stepped portions such as contact holes are forced to have vertical walls, making it difficult to form a wiring film well.

本発明者は、上記のような問題の発生は、着膜される膜
の基板に対して垂直方向の膜成長速度に対して水平方向
の膜成長速度が極端に遅いこと、及び膜の成長初期過程
における結晶核の発生が段差部底面の角の部分で少ない
ことに起因するものであることを究明し、さらに研究を
続けた結果、基板に着膜される材料の蒸気流が基板に到
達して着膜する前の過程において、蒸気流に電子線等の
励起エネルギーを照射し、蒸気流の粒子を高いエネルギ
ー状態をもつ励起状態のものにしておけば、このような
高いエネルギー状態をもつ蒸発物質が基板に714達す
ると、結晶核の発生が基板の形にかかわらず一様なもの
であり、かつ核発生後の膜の成長過程では基板に対して
水平方向の膜成長速度が大きくなることを見い出し、か
かる原理に基いて本発明をなしとげたのである。
The present inventor believes that the occurrence of the above problem is due to the fact that the film growth rate in the horizontal direction is extremely slow relative to the film growth rate in the vertical direction with respect to the substrate of the film to be deposited, and that It was determined that this was due to the fact that fewer crystal nuclei were generated at the bottom corner of the step, and as a result of further research, it was discovered that the vapor flow of the material being deposited on the substrate reached the substrate. If the vapor flow is irradiated with excitation energy such as an electron beam in the process before film deposition, and the particles in the vapor flow are brought into an excited state with a high energy state, evaporation with such a high energy state can be prevented. When the substance reaches the substrate 714, the generation of crystal nuclei is uniform regardless of the shape of the substrate, and in the film growth process after nucleation, the film growth rate in the horizontal direction with respect to the substrate increases. They discovered this and accomplished the present invention based on this principle.

以下、本発明に係る膜形成法及び膜形成装置の実施例に
ついて真空蒸着法を例にとって説明する。
Embodiments of the film forming method and film forming apparatus according to the present invention will be described below, taking a vacuum evaporation method as an example.

第3図は、本発明に係る膜形成装置の概略説明図であり
、同図中、10は真空蒸着装置Aのチャンバー、11は
基板ホルダー、12は蒸着源物質を入れる容器、13は
真空バルブであって、これらの構成は従来の真空蒸着装
置のものと同じである。
FIG. 3 is a schematic explanatory diagram of the film forming apparatus according to the present invention, in which 10 is a chamber of the vacuum evaporation apparatus A, 11 is a substrate holder, 12 is a container containing a deposition source material, and 13 is a vacuum valve. These configurations are the same as those of conventional vacuum evaporation equipment.

14はフィラメント、15はフィラメント加熱電源、1
6は加速電極、17は加速電圧電源であって、これらに
よって電子加速器Bを構成しており、この電子加速器B
によって放出された電子線が蒸着源物質よりの蒸発物質
に衝突するように真空蒸着装置に設けられている。尚、
電子加速器より放出される電子線は基板ホルダーに取り
付けられる基板には衝突しないものとなる向きにされて
いる。
14 is a filament, 15 is a filament heating power source, 1
6 is an accelerating electrode, 17 is an accelerating voltage power source, and these constitute an electron accelerator B.
A vacuum evaporation apparatus is provided so that the electron beam emitted by the evaporation source material collides with the evaporated material from the evaporation source material. still,
The electron beam emitted from the electron accelerator is oriented so as not to collide with the substrate attached to the substrate holder.

このような装置において、基板ホタダー11に基板20
を取り利け、又、容器12にアルミニウム合金等の配線
膜用構成物質21を入れ、そして真空バルブ13を介し
てチャンバー1o内を高真空に排気した後、容器12を
加熱して配線膜用構成物質21を加熱熔融させ、第3図
中点線で示すような蒸気流を作ると共に、この蒸気流の
飛翔過程の途中において電子加速器を作用させて電子線
を放出し、蒸気流の蒸発粒子に数十eV、例えば30e
Vのエネルギーの電子を衝突せしめ、蒸発粒子がイオン
化されたp1励起された状態のものとなるようにし、全
体として高いエネルギーを持つ蒸気流に変換する。
In such an apparatus, a substrate 20 is placed on a substrate hotadder 11.
Also, put a wiring film constituent material 21 such as an aluminum alloy into the container 12, and after evacuating the inside of the chamber 1o to a high vacuum via the vacuum valve 13, heat the container 12 to prepare the wiring film material 21. The constituent material 21 is heated and melted to create a vapor flow as shown by the dotted line in FIG. Several tens of eV, for example 30e
The electrons with an energy of V are bombarded to cause the evaporated particles to be in the ionized p1 excited state, converting them into a vapor stream with an overall high energy.

このようにして高工゛ネルギーを持つ蒸気流が基板20
に到達すると、通常より大きな移動度をもって基板表面
を移動し、基板表面には均一な結晶核が発生し、又、基
板と水平方向の膜成長速度も大きく、従って基板の形に
よらず膜は等方向な成長をするようになり、例えば基板
2oが第4図に示すように、シリコンウェハー22上に
酸化膜23が形成されてコンタクトホールの構成された
もののように、垂直壁を有する段差部分のあるものでも
、綺麗な膜24が形成されるようになる。
In this way, a high-energy vapor flow is applied to the substrate 20.
When it reaches , it moves on the substrate surface with a higher mobility than usual, uniform crystal nuclei are generated on the substrate surface, and the film growth rate in the direction horizontal to the substrate is also high, so the film grows regardless of the shape of the substrate. For example, as shown in FIG. 4, the substrate 2o has a stepped portion with vertical walls, such as the one in which an oxide film 23 is formed on a silicon wafer 22 and a contact hole is formed. A clean film 24 can be formed even if there is some scratches.

上述の如く、本発明に係る膜形成法は、基板に蒸気流を
岸てて蒸発物質を着膜させる際に、蒸気流に励起エネル
ギーを照射するものであるので、基板の形状によらず成
膜が綺麗に行なえ、例えば半導体素子製造に際してコン
タクトポールのあるようなものでも配線膜が確実に行な
え、信頼性の高い歩留りの良い素子が得られるものとな
り、又、基板に蒸気流を当てて成膜する装置に、蒸気流
を構成する物質に対する励起エネルギー照射装置を設け
たものであるので、簡単な装置によって基板に綺麗な成
膜が行なえる等の特長を有する。
As mentioned above, the film forming method according to the present invention irradiates the vapor flow with excitation energy when depositing the evaporated substance onto the substrate by directing the vapor flow to the substrate. The film can be formed neatly, and wiring films can be formed reliably even on devices with contact poles during the manufacturing of semiconductor devices, resulting in highly reliable devices with high yields. Since the film forming device is equipped with an excitation energy irradiation device for the substance constituting the vapor flow, it has the advantage that a clean film can be formed on the substrate with a simple device.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の真空蒸着装置の説明図、第2図は基板に
蒸着法により成膜した説明図、第3図は本発明に係る膜
形成装置の1実施例の説明図、第4図は本発明の膜形成
法を実施しだ説明図である。 A・・真空蒸着装置、B・・電子加速器、2o・・・基
板、24・・・膜。 特許出願人  日本ビクター株式会社
FIG. 1 is an explanatory diagram of a conventional vacuum evaporation apparatus, FIG. 2 is an explanatory diagram of a film formed on a substrate by the evaporation method, FIG. 3 is an explanatory diagram of one embodiment of the film forming apparatus according to the present invention, and FIG. FIG. 2 is an explanatory diagram showing the implementation of the film forming method of the present invention. A... Vacuum deposition device, B... Electron accelerator, 2o... Substrate, 24... Film. Patent applicant: Victor Japan Co., Ltd.

Claims (1)

【特許請求の範囲】 ■ 基板に蒸気流を当てて蒸発物質を着膜させる際に、
蒸気流に励起エネルギーを照射することを特徴とする膜
形成法。 ■ 基板に蒸気流を当てて成膜する装置に、蒸気流を構
成する物質に対する;励起エネルギー照射装置を設けた
ことを特徴とする膜形成装置。
[Claims] ■ When applying a vapor flow to a substrate to deposit an evaporated substance into a film,
A film formation method characterized by irradiating excitation energy to a vapor flow. (2) A film forming apparatus characterized in that an apparatus for forming a film by applying a vapor flow to a substrate is provided with an excitation energy irradiation device for a substance constituting the vapor flow.
JP15892882A 1982-09-14 1982-09-14 Method and apparatus for forming film Pending JPS5948939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15892882A JPS5948939A (en) 1982-09-14 1982-09-14 Method and apparatus for forming film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15892882A JPS5948939A (en) 1982-09-14 1982-09-14 Method and apparatus for forming film

Publications (1)

Publication Number Publication Date
JPS5948939A true JPS5948939A (en) 1984-03-21

Family

ID=15682398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15892882A Pending JPS5948939A (en) 1982-09-14 1982-09-14 Method and apparatus for forming film

Country Status (1)

Country Link
JP (1) JPS5948939A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205474A (en) * 1983-05-04 1984-11-21 Semiconductor Energy Lab Co Ltd Vapor deposition method
JPS61210175A (en) * 1985-03-13 1986-09-18 Canon Inc Electron beam assisted film forming device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205474A (en) * 1983-05-04 1984-11-21 Semiconductor Energy Lab Co Ltd Vapor deposition method
JPH0148346B2 (en) * 1983-05-04 1989-10-18 Handotai Energy Kenkyusho
JPS61210175A (en) * 1985-03-13 1986-09-18 Canon Inc Electron beam assisted film forming device

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