JPS62263690A - Manufacture of thick film circuit board - Google Patents
Manufacture of thick film circuit boardInfo
- Publication number
- JPS62263690A JPS62263690A JP10659986A JP10659986A JPS62263690A JP S62263690 A JPS62263690 A JP S62263690A JP 10659986 A JP10659986 A JP 10659986A JP 10659986 A JP10659986 A JP 10659986A JP S62263690 A JPS62263690 A JP S62263690A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- circuit board
- coupling agent
- film circuit
- silane coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 18
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011195 cermet Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 210000002858 crystal cell Anatomy 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- FKUYYVQYKRJRLM-UHFFFAOYSA-N n'-[1-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)C(CC)NCCN FKUYYVQYKRJRLM-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、厚膜回路基板の製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a thick film circuit board.
液晶ディスプレイの表示部と駆動回路部とをガラス基板
上へ一体化した表示回路モジュールを厚膜法によシ作製
するにあたって、従来はサーメット系貴金属ベース）（
Ａｇ−Ｐｄ系ペースト）を使用し、導体パターンをスク
リーン印刷後、５５０℃〜６５０℃（最適５８０℃）で
焼成し、ＬＳＩ、抵抗、コンデンサ等の電子部品を半田
付けし、回路形成を行っていた。すなわち、第３図（耐
における基板（ガラス）１の上面に透明電極２を形成し
てなるガラス基板３に、サーメット系貴金属ペースト４
を使用して導体パターンをスクリーン印刷しく第３図（
ｂ））、５８０℃で焼成した後（第３図（ｃ））、ガラ
ス基板３上に液晶セル５を作製しく第３図（ｄ））、回
路部品６を実装していた（第３図（ｅ））。When manufacturing a display circuit module that integrates the display part and drive circuit part of a liquid crystal display on a glass substrate using a thick film method, conventionally a cermet-based precious metal base) (
After screen-printing a conductor pattern (Ag-Pd paste), it is fired at 550°C to 650°C (optimally 580°C), and electronic components such as LSIs, resistors, and capacitors are soldered to form circuits. Ta. That is, a cermet-based noble metal paste 4 is applied to a glass substrate 3 having a transparent electrode 2 formed on the upper surface of the substrate (glass) 1 in FIG.
Figure 3 shows how to screen print a conductor pattern using
b)) After firing at 580° C. (FIG. 3(c)), a liquid crystal cell 5 was fabricated on the glass substrate 3 (FIG. 3(d)), and a circuit component 6 was mounted (FIG. 3(d)). (e)).
しかしながらこのよう々厚膜回路基板の製造方法による
と、サーメット系貴金属ペースト４の焼成温度が５８０
℃と極めて高く、焼成によシガラス基板３が反シ、うね
り等の変形をおこし、液晶表示部のスペースギャップを
均一にすることができず、液晶表示特性を十分満足する
製品の作製が困難であった。However, according to this method of manufacturing a thick film circuit board, the firing temperature of the cermet-based noble metal paste 4 is 580°C.
℃, the glass substrate 3 undergoes deformation such as warping and waviness during firing, making it impossible to make the space gap of the liquid crystal display area uniform, and making it difficult to produce a product that fully satisfies the liquid crystal display characteristics. there were.
そこで、サーメット系貴金属ペーストに変えて、その硬
化温度の低い（１５０〜１６０℃）ポリマ系ベース）（
Ａｇ＋ｃｕといった金属粉をフェノール樹脂、エポキシ
樹脂等へ均一に分散したもの）を用いる方法が試みられ
ているが、ガラス基板との密着性が悪く、皮膜が簡単に
剥離してしまい使用できなかった。Therefore, we decided to change to a cermet-based noble metal paste (a polymer-based paste with a low curing temperature (150-160°C)) (
Attempts have been made to use metal powder such as Ag+Cu (uniformly dispersed in phenol resin, epoxy resin, etc.), but the film had poor adhesion to the glass substrate and the film easily peeled off, making it unusable.
本発明はこのような問題点に鑑みてなされたもので、ガ
ラス基板表面をシランカップリング剤により処理した後
、該基板上にポリマ系ペーストを使用して導体パターン
を形成するようＫしたものである。The present invention has been made in view of these problems, and involves treating the surface of a glass substrate with a silane coupling agent, and then forming a conductor pattern on the substrate using a polymer paste. be.
したがってこの発明による厚膜回路基板の製造方法によ
れば、シランカップリング剤の化学結合によって、ポリ
マ系ペーストのガラス基板への密着性が増大する。Therefore, according to the method for manufacturing a thick film circuit board according to the present invention, the adhesion of the polymer paste to the glass substrate is increased due to the chemical bonding of the silane coupling agent.
〔実施例〕
以下、本発明に係る厚膜回路基板の製造方法を詳細に説
明する。ます、この製造方法の説明に入る前に、シラン
カップリング剤について説明しておく。すなわち、シラ
ンカップリング剤は、無機質と有機質との双方に化学結
合する性質を有し、分子中に２個以上の異った反応基を
もつ有機ケイ素単量体であり、下記の化学式で示される
。[Example] Hereinafter, a method for manufacturing a thick film circuit board according to the present invention will be described in detail. Before going into the explanation of this manufacturing method, I will explain the silane coupling agent. In other words, a silane coupling agent is an organosilicon monomer that has the property of chemically bonding to both inorganic and organic materials and has two or more different reactive groups in its molecule, and is represented by the chemical formula below. It will be done.
（ＹＲＳｉＸ３：１
但し、Ｙ：有機マトリックスと反応する有機官能基
Ｘ：Ｓｔ原子に結合している加水分解性の基（ＮＨ２Ｃ
Ｈ２ＣＨ２ＮＨ−、Ｈ８−、Ｃｌ−等）。(YRSiX3:1 However, Y: organic functional group that reacts with the organic matrix X: hydrolyzable group bonded to the St atom (NH2C
H2CH2NH-, H8-, Cl-, etc.).
無機質および有機質との反応機構は、下記反応式％式％
まずシランカップリング剤が加水分解を受はシラノール
となシ、無機質の表面とシロキサン結合を作る一方、有
機官能基が有機質表面と反応し橋かけを行い、機械的強
度、接着性の向上、電気特性の安定化等を図る。The reaction mechanism between inorganic and organic materials is as follows: First, the silane coupling agent undergoes hydrolysis to form silanol, which forms a siloxane bond with the surface of the inorganic material, while the organic functional group reacts with the surface of the organic material. Cross-linking is performed to improve mechanical strength, adhesion, and stabilize electrical properties.
本発明は、このようなシランカップリング剤の性質を、
ガラス基板（無機）とポリマ系ペースト（有機）との接
合の際に利用したもので、以下のような具体的な来験を
行ったところ密着性の点で顕著な効果が確認された。The present invention aims to improve the properties of such a silane coupling agent,
It was used when bonding a glass substrate (inorganic) and a polymer paste (organic), and when the following specific experiments were conducted, a remarkable effect in terms of adhesion was confirmed.
すなわち、ガラス基板（ソーダライムガラス）を洗浄後
、シランカップリング剤Ｎ−（β−アミノエチル）−ｒ
−アミノプロピルトリメトキシシラ７ （Ｈ２Ｎ（ＣＨ
２）２ＮＨ（ＣＨ２）３ Ｓｌ （ＯＭ＠）３−東芝シ
リコーン（株） ＴＳＬ８３４０）の１％アルコール水
溶液を調整し、その基板面へスピンナ（ディップでも可
能）によシコーティングを行う。第２図における７はガ
ラス基板面（図示せず）にコーティングされたシランカ
ップリング剤であシ、この後１００℃３０分乾燥後、ポ
リ系銅ペースト（三井金属鉱業Ｌ −１０００） ８を
使用し、スクリーン印刷によシ回路形成を行い１６０℃
３０分硬化する。しかして、皮膜の密着強度を測定する
為、無電解ニッケルメッキ（日本カニゼンＳＢ −５５
） ９にて処理後、共晶半田１０にて測定端子１１を半
田付けし、この測定端子１１を図示矢印方向に引つ張シ
、強度測定を行う。このような方法で強度測定を行った
結果、垂直剥離強度で２５に９ｆ／ｃｔ１以上の結果が
得られた。That is, after cleaning the glass substrate (soda lime glass), the silane coupling agent N-(β-aminoethyl)-r
-Aminopropyltrimethoxysila7 (H2N(CH
2) Prepare a 1% alcohol aqueous solution of 2NH(CH2)3Sl(OM@)3-Toshiba Silicone Corporation TSL8340), and coat the substrate surface with a spinner (dipping is also possible). In Figure 2, 7 is a silane coupling agent coated on the glass substrate surface (not shown). After drying at 100°C for 30 minutes, poly-based copper paste (Mitsui Mining & Co. L-1000) 8 is used. Then, the circuit was formed by screen printing at 160°C.
Cure for 30 minutes. Therefore, in order to measure the adhesion strength of the film, electroless nickel plating (Nippon Kanigen SB-55
) After the treatment in step 9, the measurement terminal 11 is soldered with eutectic solder 10, and the measurement terminal 11 is pulled in the direction of the arrow shown in the figure to measure the strength. As a result of measuring the strength using this method, a vertical peel strength of 25 to 9 f/ct1 or more was obtained.
尚、シランカップリング剤をコーティングせずに同様実
験を行ったところ、ニッケルメッキ処理中に皮膜が剥離
してしまう、あるいはニッケルメッキ処理が施されたと
しても垂直剥離強度にして１．０ｋｌ／ｃ！Ａ以下程度
の密着性しか得られなかった。In addition, when a similar experiment was conducted without coating with a silane coupling agent, the film peeled off during nickel plating, or even if nickel plating was applied, the vertical peel strength was 1.0 kl/c. ! Only an adhesion level of A or lower was obtained.
第１図は、本発明に係る厚膜回路基板の製造方法の一実
施例を示す工程図である。同図において、第３図と同一
符号は同一部材を示しその説明は省略する。すなわち、
第１図（ａ）におけるガラス基板３に前述したシランカ
ップリング剤７をコーティングする（第１図（ｂ））。FIG. 1 is a process diagram showing an embodiment of a method for manufacturing a thick film circuit board according to the present invention. In this figure, the same reference numerals as in FIG. 3 indicate the same members, and the explanation thereof will be omitted. That is,
The glass substrate 3 in FIG. 1(a) is coated with the silane coupling agent 7 described above (FIG. 1(b)).
そして、ポリマ系銅ペースト８を使用して導体パターン
をスクリーン印刷しく第１図（Ｃ））、１６０’Ｃで硬
化後（第１図（ｄ））、ガラス基板３上に液晶セル５を
作製しく第１図（ｅ））、回路部品６を実装する。つま
シ、従来においては、ポリマ系ペーストの基板への密着
性が悪く、低温度中での厚膜回路基板の製造が困難であ
ったが、本実施例においては、シランカップリング剤７
を介してポリマ系銅ペースト８を接合しているのでその
密着性が高まシ、回路部品６の支障のない実装が可能と
なっている。したがって、製造過程においてガラス基板
３に反シ、うねシ等の変形が生じず、液晶表示部のスペ
ースギャップの均一化を図ることができ、液晶表示特性
の優れた製品の製作が可能となる。また、ポリマ系ペー
ストは従来のサーメット系貴金属ペーストに比較しその
コストが安い為、製品全体としてのコストダウンを図る
ことができる。Then, a conductor pattern is screen printed using the polymeric copper paste 8 (Fig. 1(C)), and after curing at 160'C (Fig. 1(d)), a liquid crystal cell 5 is fabricated on the glass substrate 3. As shown in FIG. 1(e), the circuit components 6 are mounted. In the past, the adhesion of the polymer paste to the substrate was poor, making it difficult to manufacture thick film circuit boards at low temperatures, but in this example, the silane coupling agent 7
Since the polymer-based copper paste 8 is bonded through the bonding layer, its adhesion is high, and the circuit components 6 can be mounted without any trouble. Therefore, the glass substrate 3 does not undergo deformation such as warping or ridges during the manufacturing process, and the space gap of the liquid crystal display section can be made uniform, making it possible to manufacture products with excellent liquid crystal display characteristics. . Furthermore, since the cost of polymer paste is lower than that of conventional cermet noble metal paste, it is possible to reduce the cost of the entire product.
尚、本実施例においてはシランカップリング剤として、
東芝シリコン（株）製のＴＳＬ８３４０を用いたが、信
越化学工業（株）製のＫＢＭ−６０３（Ｈ２Ｎ（ＣＨ２
）２ＮＨ（ＣＨ２）３Ｓｉ（ＯＣＨ３）３）を用いても
よく、さらにγ−アミノプロピルトリエトキシシラン（
東芝シリコーン（株）製ＴＳＬ８３３１ 、信越化学工
業（株）製ＫＢＭ９０３ ）やＮ−（β−アミノエチル
）−１−アミノプロピルメチルジメトキシシラン（信越
化学工業（株）ＭＫＢＭ６０２）等を用いても同様効果
を奏する。In addition, in this example, as a silane coupling agent,
TSL8340 manufactured by Toshiba Silicon Co., Ltd. was used, but KBM-603 (H2N (CH2
)2NH(CH2)3Si(OCH3)3) may be used, and γ-aminopropyltriethoxysilane (
Similar effects can be obtained using TSL8331 (manufactured by Toshiba Silicone Co., Ltd., KBM903 (manufactured by Shin-Etsu Chemical Co., Ltd.)) or N-(β-aminoethyl)-1-aminopropylmethyldimethoxysilane (MKBM602 (manufactured by Shin-Etsu Chemical Co., Ltd.)). play.
また、上述した実施例においては、アミノシラン系のシ
ランカップリング剤を用いたが、エポキシシラン系のシ
リコンカップリング剤として、例えばｒ−グリシドキシ
グロビルトリメトキシシラン（東芝シリコーン（株）製
ＴＳＬ８３５０、信越化学工業（株）製ＫＢＭ４０３
）やβ−（３４エポキシシクロヘキシル）エチルトリメ
トキシシラン（信越化学工業（株）製ＫＢＭ３０３ ）
等を用いてもよく、液晶ディスプレイ表示部と駆動回路
との一体化モジュールの製造に限定されるものでもない
。Further, in the above-mentioned examples, an aminosilane-based silane coupling agent was used, but as an epoxysilane-based silicone coupling agent, for example, r-glycidoxyglobyltrimethoxysilane (TSL8350 manufactured by Toshiba Silicone Corporation), KBM403 manufactured by Shin-Etsu Chemical Co., Ltd.
) and β-(34epoxycyclohexyl)ethyltrimethoxysilane (KBM303 manufactured by Shin-Etsu Chemical Co., Ltd.)
etc., and is not limited to manufacturing an integrated module of a liquid crystal display display section and a drive circuit.
以上説明したように本発明による厚膜回路基板の製造方
法によると、ガラス基板表面をシラ／カップリング剤に
より処理した後、該基板上にポリマ系ペーストを使用し
て導体パターンを形成するようにしたので、シランカッ
プリング剤の化学結合によって硬化温度の低いポリマ系
ペーストのガラス基板への密着性が増し、ポリマ系ペー
ストの支障のない使用が可能となると共に、製造過程に
おいてガラス基板に反シ、うねυ等の変形が生ずる虞れ
がなくなる。As explained above, according to the method of manufacturing a thick film circuit board according to the present invention, after the surface of a glass substrate is treated with a silica/coupling agent, a conductive pattern is formed on the substrate using a polymer paste. Therefore, the chemical bonding of the silane coupling agent increases the adhesion of the polymer paste, which has a low curing temperature, to the glass substrate, making it possible to use the polymer paste without any problems. , ridges υ, etc. are eliminated.
第１図は本発明に係る厚膜回路基板の製造方法の一実施
例を示す工程図、第２図はこの製造方法に用いるポリマ
系ペーストの密着力の測定方法を示す説明図、第３図は
従来の厚膜回路基板の製造方法を示す工程図である。
３・・・・ガラス基板、５・・・・液晶セル、６・・・
・回路部品、７・・・・シランカップリング剤、８・・
・・ポリマ系銅ペースト。FIG. 1 is a process diagram showing an example of the method for manufacturing a thick film circuit board according to the present invention, FIG. 2 is an explanatory diagram showing a method for measuring the adhesion of a polymer paste used in this manufacturing method, and FIG. 1 is a process diagram showing a conventional method for manufacturing a thick film circuit board. 3...Glass substrate, 5...Liquid crystal cell, 6...
・Circuit parts, 7... Silane coupling agent, 8...
...Polymer-based copper paste.
Claims (2)
理した後、該基板上にポリマ系ペーストを使用して導体
パターンの形成を行うようにしたことを特徴とする厚膜
回路基板の製造方法。(1) A method for manufacturing a thick film circuit board, characterized in that the surface of a glass substrate is treated with a silane coupling agent, and then a conductor pattern is formed on the substrate using a polymer paste.
アミノシラン系よりなる群から選択したことを特徴とす
る特許請求の範囲第１項記載の厚膜回路基板の製造方法
。(2) The method for manufacturing a thick film circuit board according to claim 1, characterized in that the silane coupling agent is selected from the group consisting of epoxy silane type and amino silane type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10659986A JPS62263690A (en) | 1986-05-12 | 1986-05-12 | Manufacture of thick film circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10659986A JPS62263690A (en) | 1986-05-12 | 1986-05-12 | Manufacture of thick film circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62263690A true JPS62263690A (en) | 1987-11-16 |
Family
ID=14437606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10659986A Pending JPS62263690A (en) | 1986-05-12 | 1986-05-12 | Manufacture of thick film circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62263690A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140870U (en) * | 1988-03-22 | 1989-09-27 | ||
| JPH01140881U (en) * | 1988-03-22 | 1989-09-27 | ||
| JPH01140882U (en) * | 1988-03-22 | 1989-09-27 | ||
| USRE36896E (en) * | 1993-03-05 | 2000-10-03 | Trojan Technologies Inc. | Fluid treatment system and process |
| JP2010232497A (en) * | 2009-03-27 | 2010-10-14 | Furukawa Electric Co Ltd:The | Method of forming conductive material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111671A (en) * | 1978-02-20 | 1979-09-01 | Sharp Kk | Connection method between boards |
| JPS5517514A (en) * | 1978-07-25 | 1980-02-07 | Vmi Epe Holland | Belt tire forming drum |
| JPS56130946A (en) * | 1980-03-18 | 1981-10-14 | Toshiba Corp | Protecting method of wiring layer |
-
1986
- 1986-05-12 JP JP10659986A patent/JPS62263690A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111671A (en) * | 1978-02-20 | 1979-09-01 | Sharp Kk | Connection method between boards |
| JPS5517514A (en) * | 1978-07-25 | 1980-02-07 | Vmi Epe Holland | Belt tire forming drum |
| JPS56130946A (en) * | 1980-03-18 | 1981-10-14 | Toshiba Corp | Protecting method of wiring layer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140870U (en) * | 1988-03-22 | 1989-09-27 | ||
| JPH01140881U (en) * | 1988-03-22 | 1989-09-27 | ||
| JPH01140882U (en) * | 1988-03-22 | 1989-09-27 | ||
| USRE36896E (en) * | 1993-03-05 | 2000-10-03 | Trojan Technologies Inc. | Fluid treatment system and process |
| JP2010232497A (en) * | 2009-03-27 | 2010-10-14 | Furukawa Electric Co Ltd:The | Method of forming conductive material |
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