JPS62263630A - Basket for wafer - Google Patents
Basket for waferInfo
- Publication number
- JPS62263630A JPS62263630A JP10704586A JP10704586A JPS62263630A JP S62263630 A JPS62263630 A JP S62263630A JP 10704586 A JP10704586 A JP 10704586A JP 10704586 A JP10704586 A JP 10704586A JP S62263630 A JPS62263630 A JP S62263630A
- Authority
- JP
- Japan
- Prior art keywords
- wafer basket
- wafer
- basket
- wafers
- upper section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012495 reaction gas Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 32
- 239000007789 gas Substances 0.000 abstract description 7
- 238000007796 conventional method Methods 0.000 abstract description 2
- 241000880493 Leptailurus serval Species 0.000 abstract 1
- ILVGMCVCQBJPSH-WDSKDSINSA-N Ser-Val Chemical compound CC(C)[C@@H](C(O)=O)NC(=O)[C@@H](N)CO ILVGMCVCQBJPSH-WDSKDSINSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野 一
本発明はウェハバスケット、特に縦型構造の拡散炉、C
VD装置等に男いるウェハパスケア)K関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a wafer basket, particularly a vertical structure diffusion furnace, a C
Concerning wafer pass care in VD equipment, etc.
従来の技術
ウェハの大口径化に伴い、熱均−性やダスト軽減から最
近では縦型構造の拡散炉やCVD装置が注目を集めてい
る。すなわち、反応管を水平に配置していた従来の横型
装置に対し、前記反応管を垂直に立てた装置である。こ
のような装置シてするとウェハは水平に、一定間隔をお
いて幾段か、に重ねた状態でウェハバスケットに配置す
る。その様子を第3図に示す。ウェハバスケット1はウ
ェハ2を保持する4本の柱3と上下2枚の円板4から成
る。前記円板4はそれぞれ平行平板になっており、ウェ
ハバスケットを回転させるべく回転軸を備えている。さ
らに上部円板には中央部にパイロスコープにて温度測定
を行なうために穴5を設けている。装置が縦型構造であ
ることから、反応管内のガスの流れは上下に流れる。そ
こで従来のウェハバスケットを用いた場合の反応ガス6
の流れは上部円板4にさえぎられそのほとんどがウェハ
の外周にまわってしまう。BACKGROUND OF THE INVENTION As wafers become larger in diameter, vertical diffusion furnaces and CVD apparatuses have recently been attracting attention due to their thermal uniformity and dust reduction. That is, in contrast to the conventional horizontal apparatus in which the reaction tubes are arranged horizontally, this is an apparatus in which the reaction tubes are erected vertically. When such an apparatus is used, the wafers are placed horizontally in a wafer basket in several stacks at regular intervals. The situation is shown in Figure 3. The wafer basket 1 consists of four pillars 3 for holding wafers 2 and two upper and lower discs 4. Each of the disks 4 is a parallel flat plate and is provided with a rotating shaft for rotating the wafer basket. Furthermore, a hole 5 is provided in the center of the upper disk for temperature measurement with a pyroscope. Since the apparatus has a vertical structure, gas flows vertically within the reaction tube. Therefore, when using a conventional wafer basket, the reaction gas 6
The flow is obstructed by the upper disk 4, and most of it ends up around the outer periphery of the wafer.
発明が解決しようとする問題点
以上のように反応ガス6がウェハの外周に流れてしまう
と、たとえ高真空状態であってもウェハバスケットの上
部に位置する数枚のウェハはガス奮囲気にムラが生じ膜
の均一性を得ることができない。また、前に記述したパ
イロスコープ用穴5をむやみに大きくすることは、平行
平板に保つことができなかったり高温加熱による回転軸
のズレを生じる危険性があるため適切ではない。Problems to be Solved by the Invention If the reaction gas 6 flows around the wafer as described above, even in a high vacuum state, the several wafers located at the top of the wafer basket will experience uneven gas flow. occurs, making it impossible to obtain uniformity of the film. Further, it is not appropriate to make the pyroscope hole 5 described above unnecessarily large because there is a risk that it will not be possible to maintain a parallel flat plate or that the axis of rotation will be misaligned due to high temperature heating.
問題点を解決するための手段
これら問題点を解決するため、上部円板部に例えば風車
状のバネを備え、反応ガスの通気を良くするだめの通気
穴を備えた構造のものとする。Means for Solving the Problems In order to solve these problems, a structure is adopted in which the upper disk part is provided with, for example, a windmill-shaped spring, and ventilation holes are provided to improve ventilation of the reaction gas.
作 用
本発明のバスケットによると、ムラのないガス雰囲気を
得ることができ、均一な膜の形成が可能となる。Function: According to the basket of the present invention, an even gas atmosphere can be obtained and a uniform film can be formed.
実施例
本発明の一実施例を第1 、第2図を用いて以下に説明
する。Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第1図は本発明のウェハバスケットを斜め上より見た立
体図である。ウェハバスケット1にはウェハ2を一定間
隔を置いて幾段かに設置している。FIG. 1 is a three-dimensional view of the wafer basket of the present invention viewed obliquely from above. Wafers 2 are placed in several stages in a wafer basket 1 at regular intervals.
ウェハバスケットの上部円板にはバネ7と通気口8を備
えている。前記バネ7は例えば風車のようにその断面が
S字形状を有している。反応管上部より導入した反応ガ
ス6は前記バネ7に添って下方へ流れ込む。さらにウェ
ハバスケット1の回転によって上方のガス雰囲気にムラ
がない。The upper disk of the wafer basket is equipped with a spring 7 and a vent 8. The spring 7 has an S-shaped cross section, for example like a windmill. The reaction gas 6 introduced from the upper part of the reaction tube flows downward along the spring 7. Furthermore, due to the rotation of the wafer basket 1, there is no unevenness in the gas atmosphere above.
発明の効果
本発明のウェハバスケットによると上記のようにムラの
ないガス雰囲気を得ることができるため、従来法では膜
が不均一だったウェハバスケット上部のウェハに対して
も均一な膜を形成することができる。Effects of the Invention According to the wafer basket of the present invention, it is possible to obtain an even gas atmosphere as described above, so that a uniform film can be formed even on the wafers at the top of the wafer basket, where the film was non-uniform in the conventional method. be able to.
第1図は本発明の一実施例のウェハバスケット立体斜視
図、第2図A、Bは同ウェハバスケットの上面図および
正面図、第3図A、Bは従来のウェハバスケットの上面
図および正面図である。
1・・・・・・ウェハバスケット、2・・・・・・ウェ
ハ、6・・・・・・反応ガス、7・・・・・・バネ、8
・・・・・・通気口。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
第2図FIG. 1 is a three-dimensional perspective view of a wafer basket according to an embodiment of the present invention, FIGS. 2A and B are a top view and front view of the same wafer basket, and FIGS. 3A and B are a top view and front view of a conventional wafer basket. It is a diagram. 1...Wafer basket, 2...Wafer, 6...Reaction gas, 7...Spring, 8
······vent. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2
Claims (1)
において、天板に反応ガス導引のためのバネと通気口と
を備えたことを特徴とするウェハバスケット。A wafer basket used in a heat treatment furnace having a vertical structure, characterized in that the top plate is equipped with a spring and a vent for guiding a reaction gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10704586A JPS62263630A (en) | 1986-05-09 | 1986-05-09 | Basket for wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10704586A JPS62263630A (en) | 1986-05-09 | 1986-05-09 | Basket for wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62263630A true JPS62263630A (en) | 1987-11-16 |
Family
ID=14449120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10704586A Pending JPS62263630A (en) | 1986-05-09 | 1986-05-09 | Basket for wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62263630A (en) |
-
1986
- 1986-05-09 JP JP10704586A patent/JPS62263630A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH07335579A (en) | Heat-treatment furnace | |
CN106663604A (en) | Carousel batch epitaxy system | |
JP3718688B2 (en) | Heating device | |
KR101466816B1 (en) | Heater member and substrate processing apparatus using sysceptor | |
JPS62263630A (en) | Basket for wafer | |
JP4031601B2 (en) | Vertical heat treatment equipment | |
JPH075630Y2 (en) | Heat treatment equipment | |
JP4265839B2 (en) | Heat treatment equipment | |
JP4021140B2 (en) | Heat treatment device | |
JPH06132390A (en) | Wafer boat | |
JPH0794424A (en) | Semiconductor manufacturing equipment | |
JP2963145B2 (en) | Method and apparatus for forming CVD film | |
JPH0249709Y2 (en) | ||
JP3149697B2 (en) | Wafer processing equipment | |
JPH08288232A (en) | Gas control jig of semiconductor heat treatment furnace | |
JP3184550B2 (en) | Vapor phase growth method and apparatus | |
JPS6127626A (en) | Heat treatment process and applicable supporter of semiconductor wafer | |
JPS6112674Y2 (en) | ||
JP2992576B2 (en) | Vertical heat treatment equipment | |
JPS6244525Y2 (en) | ||
JPH09251960A (en) | Boat for semiconductor production | |
JPS62131522A (en) | Semiconductor heat-treatment apparatus | |
KR100244040B1 (en) | Semiconductor manufacturing system and substrate processing method | |
JPS6020510A (en) | Diffusing method of impurity | |
JP2004221150A (en) | Semiconductor manufacturing apparatus |