JPS62257167A - Production of blank for photomask - Google Patents
Production of blank for photomaskInfo
- Publication number
- JPS62257167A JPS62257167A JP61100445A JP10044586A JPS62257167A JP S62257167 A JPS62257167 A JP S62257167A JP 61100445 A JP61100445 A JP 61100445A JP 10044586 A JP10044586 A JP 10044586A JP S62257167 A JPS62257167 A JP S62257167A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- glass
- photomask
- blank
- scratches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000011521 glass Substances 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000005530 etching Methods 0.000 claims abstract description 19
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 239000012780 transparent material Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 6
- 238000009499 grossing Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 23
- 230000007547 defect Effects 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000005329 float glass Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241001474791 Proboscis Species 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 206010012601 diabetes mellitus Diseases 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はフォトマスク用ブランクの製造方法に係り、更
に詳しくはＩＣ等の半導体、液晶表示等のディスプレー
素子用基板、シャドウマスク。リードフレーム等のエツ
チング製品の製造に用いるバターニング用フォトマスク
、とりわけハードマスクの製造に用いるフォトマスク用
ブランクの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of manufacturing a blank for a photomask, and more specifically to a substrate for a semiconductor such as an IC, a display element such as a liquid crystal display, and a shadow mask. The present invention relates to a method for producing a patterning photomask used in the production of etched products such as lead frames, particularly a photomask blank used in the production of hard masks.
通常ハードマスク用ガラス基板はソーダライムガラス、
石英ガラス、又各種の低膨張ガラスが用いられるが、い
ずれも精密研磨を行ったものが用いられる。これは、ガ
ラス表面の平坦度の問題、とりわけガラス表面のキズ等
の欠陥がこのガラス表面に形成されるマスクパターンの
欠陥となり、あるいは欠陥を発生させる要因となる為で
ある。Glass substrates for hard masks are usually soda lime glass.
Quartz glass or various types of low-expansion glasses can be used, and all of them are precision-polished. This is because problems with the flatness of the glass surface, especially defects such as scratches on the glass surface, become defects in the mask pattern formed on the glass surface or cause defects.
例えばガラス表面の傷は、それ自体が光を散乱させる為
にガラス表面に傷のあるフォトマスクを用いてフォトリ
ングラフィを行う際、マスク上にバターニングされた遮
光層と同様に被パターン転写層上に影を生じ、その結果
焼き付けられたパターン中にキズが転写される。又、遮
光層としてフォトマスク上に形成された金属又は金属酸
化物の薄膜を、通常のフォトリソグラフィー法によりパ
ターニングする際、キズ部分にそりて金属薄膜とガラス
表面の界面にエツチング処理液が侵入し、パターンカケ
、断線等のψ
欠陥を発生するト噌あるから、上述のように通常フォト
マスク用ガラスは、精密研磨されたものが使用されるわ
けであるが、ここにマスク用として精密研磨しうる最大
のサイズは４００１０１０程度が上限であり、それ以上
のサイズの精密研磨ガラスは得られず、上述の限界以上
のサイズのハードマスクを製造するときには、未研磨ツ
ガラス基板を使用せざるを得ない状態である。For example, when performing photolithography using a photomask with scratches on the glass surface, scratches on the glass surface itself scatter light. casts a shadow on top, resulting in the transfer of scratches into the printed pattern. Furthermore, when patterning a thin film of metal or metal oxide formed on a photomask as a light-shielding layer using normal photolithography, the etching solution may warp along the scratches and invade the interface between the thin metal film and the glass surface. As mentioned above, normally precision-polished glass for photomasks is used because of the possibility of ψ defects such as pattern chipping, wire breakage, etc. The upper limit of the maximum size that can be obtained is about 4001010, and it is not possible to obtain precision polished glass of a size larger than that, so when manufacturing a hard mask with a size larger than the above-mentioned limit, an unpolished glass substrate must be used. state.
しかしながら、未研磨のガラス基板表面には、製造工程
、流通過程にて発生したキズがさけられず、特に大型、
大面積のガラスでは選別によりキズの無いガラスを得る
ことも不可能である。However, the surface of unpolished glass substrates is unavoidable from scratches that occur during the manufacturing and distribution processes, especially large and
For large area glass, it is impossible to obtain scratch-free glass by sorting.
本発明者は上記の問題点を解決すべく研究の結果、ガラ
ス基板の表面を化学的または物理陶エッチング法により
エッチングしてガラス基板の凹凸を少なくしたのち、ガ
ラス基板上に一層もしくは複数層よりなる遮光層を積層
することにより、ガラス傷に起因した欠陥を生せしめる
ことのないフォトマスク用ブランクを提供しうろこと、
また前記のようにエッチングによりガラス基板の凹凸を
少なくしたのち、ガラス基板面にガラス基板と透過率の
近い透明材料を塗布し、さらに表面平滑化したのち、ガ
ラス基板上に一層もしくは複数層よりなる遮光層を積層
することにより、さらに高精度のフォトマスク用ブラン
クを提供しうろことを見いだし、かかる知見にもとづい
て本発明を完成したものである。As a result of research to solve the above problems, the present inventor etched the surface of the glass substrate using chemical or physical ceramic etching methods to reduce the unevenness of the glass substrate, and then formed a layer or multiple layers on the glass substrate. By laminating a light-shielding layer of
In addition, after reducing the unevenness of the glass substrate by etching as described above, a transparent material having a transmittance similar to that of the glass substrate is applied to the surface of the glass substrate, and after smoothing the surface, a single layer or multiple layers are formed on the glass substrate. It was discovered that a photomask blank with even higher precision could be provided by laminating a light-shielding layer, and the present invention was completed based on this knowledge.
即ち、第１の発明は傷、泡などによる凹凸を有するガラ
ス基板の表面を化学的または物理的エツチング法により
エッチングしてガラス基板の凹凸を少なくしたのち、ガ
ラス基板上に一層もしくは複数層よりなる遮光層を積層
してフォトマスク用ブランクを製造することを要旨とす
るものである。That is, the first invention is to reduce the unevenness of the glass substrate by etching the surface of the glass substrate having unevenness due to scratches, bubbles, etc. using a chemical or physical etching method, and then to form a layer or a plurality of layers on the glass substrate. The gist of this method is to manufacture a photomask blank by laminating light-shielding layers.
次に第２の発明は傷、泡などによる凹凸を有するガラス
基板の表面を化学的または物理的エッチング法によりエ
ッチングしてガラス基板の凹凸を少なくしたのち、ガラ
ス基板面にガラス基板と透過率の近い透明材料を塗布し
、さらに表面平滑化したのち、ガラス基板上に一層もし
くは複数層よりなる遮光層を積層してフォトマスク用ブ
ランクを製造することを要旨とするものである。Next, the second invention is to reduce the unevenness of the glass substrate by chemically or physically etching the surface of the glass substrate that has unevenness due to scratches, bubbles, etc. The gist of this method is to manufacture a photomask blank by coating a nearly transparent material, smoothing the surface, and then laminating one or more light-shielding layers on a glass substrate.
而して上記の第１及び第２の発明においてガラス基板と
して各種のガラス板、具体的にはソーダライムガラス、
硼珪酸ガラス、石英ガラス。Therefore, in the first and second inventions described above, various glass plates, specifically soda lime glass,
Borosilicate glass, quartz glass.
ボタ、シュソーダ鉛ガラス、フロートガラス。Bota, soda lead glass, float glass.
フユージ、ンパイレックスガラス、コーニング７０５９
フー−ジョン７Ｊラス等を適用しうる。Fuuge, Npirex glass, Corning 7059
Fusion 7J Las etc. can be applied.
次に上記の第１及び第２の発明において化学的エッチン
グ法としてガラス基板面を精密洗浄したのち１〜５チ弗
化水素溶液に１〜５分間室温にて浸漬する方法なること
ができる。エツチング液として弗化水素の他弗化アンモ
ニウム／硝酸混合系などを使用できる。工、テング深さ
としては０．１〜１０μ翼程度が望ましい。この後、充
分に水洗を行い乾燥する。尚、このガラス表面のエツチ
ング操作とガラスの精密洗浄の順序は前後してもかまわ
ない。Next, in the first and second aspects of the invention, the chemical etching method may be a method in which the surface of the glass substrate is precisely cleaned and then immersed in a 1-5% hydrogen fluoride solution for 1-5 minutes at room temperature. As the etching solution, hydrogen fluoride, ammonium fluoride/nitric acid mixed system, etc. can be used. The depth of the proboscis is preferably about 0.1 to 10μ. After that, thoroughly wash with water and dry. Note that the order of etching the glass surface and precision cleaning of the glass may be reversed.
次に上記の第１及び第２の発明において物理陶エッチン
グ法として円筒型プラズマモ、チングによるドライエ、
チング法も適用できる。Next, in the above-mentioned first and second inventions, the physical ceramic etching method includes dry etching using cylindrical plasma etching,
The ching method can also be applied.
次に第１の発明による場合、上記のように処蒸着法等に
より形成し、遮光層を形成することによりフォトマスク
用ブランクを得ることができる。遮光層としてはクロム
の他にスパッタ法。Next, in the case of the first invention, a blank for a photomask can be obtained by forming a light-shielding layer by a process vapor deposition method or the like as described above. In addition to chromium, sputtering is used for the light shielding layer.
ＣＶＤ法等による酸化鉄よりなるもの、及びスバ、り法
、ＣＶＤ法等によるモリブデンノリサイドよりなるもの
なども使用できる。It is also possible to use materials made of iron oxide produced by the CVD method, etc., and materials made of molybdenum nolicide produced by the SVA method, CVD method, etc.
次に第２の発明による場合、上記のようにして処理して
表面を平滑化したのち、さらにガラス基板面にガラス基
板と透過率の近い透明材料を塗布し、さらに表面平滑化
する。代表的な方法としてはガラス基板面に酸化珪素含
有組成物（東京応化基、０ＣＤ）を引き上げ法にて塗布
したのち、焼成し、ガラス表面に酸化珪素被膜を形成す
る方法がある。酸化ケイ素含有組成物の塗布方法として
は引き上げ法が望ましいがスピン塗布法も適用できる。Next, in the case of the second invention, after the surface is smoothed by processing as described above, a transparent material having a transmittance similar to that of the glass substrate is further applied to the glass substrate surface, and the surface is further smoothed. A typical method is to apply a silicon oxide-containing composition (Tokyo Ohka Group, OCD) to the surface of a glass substrate by a pulling method, and then to bake it to form a silicon oxide film on the glass surface. As a method for applying the silicon oxide-containing composition, a pulling method is preferable, but a spin coating method is also applicable.
また５ｉ０１ 膜は１０００〜３０００Ａが望ましい
。Further, the 5i01 film is preferably 1000 to 3000A.
ガラス基板上に塗布する透明材料として酸化きる。It can be oxidized as a transparent material coated on a glass substrate.
次に以上のようにして平滑化したガラス基板面に第１の
発明の場合と同様にして遮光層を形成する。Next, a light shielding layer is formed on the glass substrate surface smoothed as described above in the same manner as in the first invention.
第１図は第１の発明によりガラス基板（１）の表面を平
滑化した状態を示す。FIG. 1 shows a state in which the surface of a glass substrate (1) has been smoothed according to the first invention.
また、第２図（−） （ｂ）は第２の発明によりガラス
基板（１）の表面を平滑化する過程を示し、図において
（２）はガラス基板と透過率の近い透明材料層を示す。In addition, Figure 2 (-) (b) shows the process of smoothing the surface of the glass substrate (1) according to the second invention, and in the figure (2) shows a transparent material layer whose transmittance is similar to that of the glass substrate. .
第３図は第１の発明により得たフォトマスク用ブランク
の断面図、第４図は第２の発明によす得たフォトマスク
用ブランクの断面図を示し、図において（３）は遮光層
を示す。FIG. 3 is a cross-sectional view of the photomask blank obtained according to the first invention, and FIG. 4 is a cross-sectional view of the photomask blank obtained according to the second invention. shows.
ガラス基板の表面を化学的または物理的エツチング法に
よりエツチングすることによりキズの断面形状を丸め、
キズの１部ジ部分をなめらかにすることができる。By etching the surface of the glass substrate using chemical or physical etching methods, the cross-sectional shape of the scratches can be rounded.
It can smooth out some scratches.
またガラス基板面にガラス基板と透過率の近い透明材料
を塗布することにより表面の凹凸の段差を埋め、さらに
表面平滑化することができる。Furthermore, by coating the glass substrate surface with a transparent material having a transmittance similar to that of the glass substrate, it is possible to fill in the unevenness of the surface and further smooth the surface.
実施例１
ｓ ｏ ｏｍＰｘ ５ｔのソーダライムフロートガラス
基板を、通常の精密洗浄を行い、その後、ＮＨ４Ｆ１部
に硝酸１０部、純水２０部を加えた液に、２５℃５分間
浸漬し約１μだけガラス表面をエツチングした。Example 1 A 5t soda lime float glass substrate was subjected to regular precision cleaning, and then immersed in a solution containing 1 part of NH4F, 10 parts of nitric acid, and 20 parts of pure water at 25°C for 5 minutes to reduce the temperature by about 1μ. Etched the glass surface.
この基板を更に水洗、乾燥し表面キズによる段差を平滑
化した基板を得た。この基板上にＣＶＤ法にて酸化鉄を
５００ＯＡ堆積し、欠陥の無い酸化鉄マスクブランクを
得た。This substrate was further washed with water and dried to obtain a substrate with smoothed steps due to surface scratches. 500 OA of iron oxide was deposited on this substrate by the CVD method to obtain a defect-free iron oxide mask blank.
実施例２
５００１１Ｘ５ｔのソーダライムフロートガラス基板を
常法により精密洗浄した後、円筒型プラズマエツチング
装置にて、高周波電力１ｋＷ。Example 2 A 50011 x 5t soda lime float glass substrate was precisely cleaned using a conventional method, and then etched using a cylindrical plasma etching device using a high frequency power of 1 kW.
反応ガ；ｘ、 ＣＦ４＋０２５ ％ガス圧１ ｔｏｒｒ
にて３０分間表面をエツチングし、ガラス表面の傷によ
る段差を平滑化した。エツチング深さは２μであった。Reaction gas; x, CF4+025% gas pressure 1 torr
The surface was etched for 30 minutes to smooth out the steps caused by scratches on the glass surface. The etching depth was 2μ.
この基板に、スバ、り法にて金属クロムを１０００Ａ堆
ｆＪ Ｌ、欠陥の無いクロムマスクブランクを得た。On this substrate, metal chromium was deposited at 1000A by a sprinkling method to obtain a defect-free chromium mask blank.
実施例３
５００ ｍ０ｘ ５ ｍ”のソーダライムフロートガラ
ス基板をＨＦ２％水溶液中に、室温にて５分間浸漬し、
約３００ＯＡガラス表面なエツチングした後、通常の精
密洗浄を行った。この基板上に東京応化製ＳｔＯ，被膜
形成剤０ＣＤ−８ｉ・５９０００を引き上げ速度４０ｃ
ｍ／分にてディ、ブ塗布した後、５００℃にて３０分間
焼成し１０００人の５ｉ０２ 膜を形成した。このガ
ラス基板上にスバ、り法にて金属クロムを１００ＯＡ堆
積し、ガラス傷による欠陥の無いクロムハードマスクブ
ランクを得た。Example 3 A 500 m0 x 5 m" soda lime float glass substrate was immersed in a 2% HF aqueous solution for 5 minutes at room temperature.
After etching the glass surface to approximately 300 OA, normal precision cleaning was performed. On this substrate, StO manufactured by Tokyo Ohka Co., Ltd. and film forming agent 0CD-8i 59000 were pulled up at a speed of 40c.
After diabetic coating at a speed of m/min, the film was baked at 500° C. for 30 minutes to form a 5i02 film of 1000 layers. 100 OA of metallic chromium was deposited on this glass substrate by a sputtering method to obtain a chrome hard mask blank free of defects caused by glass scratches.
実施例４
５００３１１に’Ｘ ５ｔのソーダライムフロートガラ
ス基板を常法により精密洗浄した後、円筒型プラズマエ
ツチング装置にて高周波電力１ ｋＷ、反応ガス圧１
ｔｏｒｒにて３０分間表面のエツチングを行った。エッ
チング深さは２μであった。この基板表面に、東京応化
製８ｉ０２被膜形成剤ＯＣＤ・Ｓｔ・５９０００を引き
上げ速度４０Ｃｍ／分にてディップ塗布した後、５００
℃にて３０分間焼成し。Example 4 After precision cleaning a 500311 x 5t soda lime float glass substrate using a conventional method, it was etched using a cylindrical plasma etching device at a high frequency power of 1 kW and a reaction gas pressure of 1.
The surface was etched for 30 minutes at Torr. The etching depth was 2μ. On the surface of this substrate, 8i02 film forming agent OCD・St・59000 manufactured by Tokyo Ohka Co., Ltd. was applied by dip coating at a pulling speed of 40 cm/min, and then
Bake at ℃ for 30 minutes.
１０００Ａの５ｉ０２膜を形成した。このガラス基板上
にスパッタ法にて金属クロムを１００ＯＡ堆積し、ガラ
ス傷による欠陥の無いクロムノ１−ドマスクブランクを
得た。A 5i02 film of 1000A was formed. On this glass substrate, 100 OA of metallic chromium was deposited by sputtering to obtain a chromium metal mask blank free of defects due to glass scratches.
以上詳記した通り１本発明によればガラス傷による欠陥
のないフォトマスク用ブランク板を容易に得ることがで
き、大面積のフォトマスク用ブランク板も容易に得るこ
とができる。As detailed above, according to the present invention, it is possible to easily obtain a blank plate for a photomask without defects due to glass scratches, and it is also possible to easily obtain a blank plate for a photomask having a large area.
第１図は第１の発明によりガラス基板の表面を平滑化し
た状態を示す断面図、第２図（ａ） （ｂ）は第２の発
明によりガラス基板（１）の表面を平滑化する過程を示
す断面図、第３図は第１の発明により得たフォトマスク
用ブランクの断面図、第４図は第２の発明により得たフ
ォトマスク用ブランクの断面図である。
１・・・・・・・・・ガラス基板
２・・・・・・・・・ガラス基板と透過率の近い透明材
料層
３・・・・・・・・・遮光層
第１図
第 ２ 図（ｂ）Figure 1 is a sectional view showing the state in which the surface of the glass substrate is smoothed according to the first invention, and Figures 2 (a) and (b) are the process of smoothing the surface of the glass substrate (1) according to the second invention. FIG. 3 is a sectional view of a photomask blank obtained according to the first invention, and FIG. 4 is a sectional view of a photomask blank obtained according to the second invention. 1...Glass substrate 2...Transparent material layer with transmittance close to that of the glass substrate 3...Light shielding layer Fig. 1 Fig. 2 (b)
Claims (2)
を化学的または物理的エッチング法によりエッチングし
てガラス基板の凹凸を少なくしたのち、ガラス基板上に
一層もしくは複数層よりなる遮光層を積層することを特
徴とするフォトマスク用ブランクの製造方法。(1) After reducing the unevenness of the glass substrate by chemically or physically etching the surface of the glass substrate that has unevenness due to scratches, bubbles, etc., a light-shielding layer consisting of one or more layers is laminated on the glass substrate. A method for producing a photomask blank, characterized by:
を化学的または物理的エッチング法によりエッチングし
てガラス基板の凹凸を少なくしたのち、ガラス基板面に
ガラス基板と透過率の近い透明材料を塗布し、さらに表
面平滑化したのち、ガラス基板上に一層もしくは複数層
よりなる遮光層を積層することを特徴とするフォトマス
ク用ブランクの製造方法。(2) After reducing the unevenness of the glass substrate by chemically or physically etching the surface of the glass substrate that has unevenness due to scratches, bubbles, etc., a transparent material with a transmittance similar to that of the glass substrate is applied to the surface of the glass substrate. A method for producing a photomask blank, which comprises coating and smoothing the surface, and then laminating a light-shielding layer consisting of one or more layers on a glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61100445A JPS62257167A (en) | 1986-04-30 | 1986-04-30 | Production of blank for photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61100445A JPS62257167A (en) | 1986-04-30 | 1986-04-30 | Production of blank for photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62257167A true JPS62257167A (en) | 1987-11-09 |
Family
ID=14274122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61100445A Pending JPS62257167A (en) | 1986-04-30 | 1986-04-30 | Production of blank for photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62257167A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005124455A1 (en) * | 2004-06-22 | 2005-12-29 | Hoya Corporation | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
| JP2006039525A (en) * | 2004-06-22 | 2006-02-09 | Hoya Corp | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
| JP2010170011A (en) * | 2009-01-26 | 2010-08-05 | Hoya Corp | Method of correcting photomask |
| JP2014232191A (en) * | 2013-05-29 | 2014-12-11 | Hoya株式会社 | Mask blank, phase shift mask, method for producing them, and method for producing semiconductor device |
-
1986
- 1986-04-30 JP JP61100445A patent/JPS62257167A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005124455A1 (en) * | 2004-06-22 | 2005-12-29 | Hoya Corporation | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
| JP2006039525A (en) * | 2004-06-22 | 2006-02-09 | Hoya Corp | Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask |
| US7862960B2 (en) | 2004-06-22 | 2011-01-04 | Hoya Corporation | Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks |
| US8039178B2 (en) | 2004-06-22 | 2011-10-18 | Hoya Corporation | Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks |
| JP2010170011A (en) * | 2009-01-26 | 2010-08-05 | Hoya Corp | Method of correcting photomask |
| JP2014232191A (en) * | 2013-05-29 | 2014-12-11 | Hoya株式会社 | Mask blank, phase shift mask, method for producing them, and method for producing semiconductor device |
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