JPS6236669A - Transfer mask and its manufacture - Google Patents
Transfer mask and its manufactureInfo
- Publication number
- JPS6236669A JPS6236669A JP60174983A JP17498385A JPS6236669A JP S6236669 A JPS6236669 A JP S6236669A JP 60174983 A JP60174983 A JP 60174983A JP 17498385 A JP17498385 A JP 17498385A JP S6236669 A JPS6236669 A JP S6236669A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- alumina film
- quartz
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、写真製版技術において用いられる転写マスク
の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to improvements in transfer masks used in photolithography.
半導体製品、特に集積回路（Ｉｎｔｅｇｒａｔｅｄ Ｃ
ｊｒ−ｅｕｉｔｓ）の製造において、回路パターンを半
導体基板に作り込むための、いわゆる写真製版技術は重
要な技術として周知であるが、この回路パターンの原版
となる転写マスクは、通常ガラス基板上に光を遮蔽する
薄膜を回路パターンとして形成することにより作られて
いる。Semiconductor products, especially integrated circuits (Integrated C
The so-called photolithography technology for creating circuit patterns on semiconductor substrates is well known as an important technology in the production of semiconductor substrates (JR-Euits), but the transfer mask that serves as the original for this circuit pattern is usually placed on a glass substrate by photolithography. It is made by forming a thin film that shields the circuit pattern as a circuit pattern.
第２図は従来の転写マスクの断面図を示すもので、（１
）は石英基板、（２）はクロームｃｃｒ＞ｍである。こ
こで微細な回路パターンを形成するにはガラス材の熱膨
張による寸法歪を避ける必要がある。Figure 2 shows a cross-sectional view of a conventional transfer mask.
) is a quartz substrate, and (2) is chrome ccr>m. In order to form a fine circuit pattern, it is necessary to avoid dimensional distortion due to thermal expansion of the glass material.
現在、最も熱膨張係数（α）の低い石英基板（そのα峡
０．５４ｘｌＯ−’ ／ ℃）が、高精度を必要とする
製品に多用されている。一方、・回路パ゛ターンとなる
べき光の遮蔽膜としては、光を反射することと、石英基
板との熱膨張係数の差が小さいこととが望まれ、そのた
め金属膜の内でもクローム（Ｃｒ）が最も低い熱膨張係
数（α−。６．２Ｘ１０−’ ／ ”Ｃ）をもつ材料の
一つとして多用されている。これはいわゆるクロムマス
クと称されているものである。Currently, quartz substrates with the lowest coefficient of thermal expansion (α) (its α value of 0.54xlO-'/°C) are often used in products that require high precision. On the other hand, as a light shielding film that is to become a circuit pattern, it is desirable that it reflect light and have a small difference in coefficient of thermal expansion from the quartz substrate. ) is widely used as one of the materials with the lowest coefficient of thermal expansion (α-.6.2X10-'/''C). This is what is called a chrome mask.
しかし、上述のクロムマスクは、Ｃｒと石英基板との間
の密着力が弱いことが欠点である。また、マスク上に異
物が付着した場合、該異物を除去する際にＣｒのパター
ンも同時に除去され、これがいわゆるパターン欠陥とな
って製品不良を起こして使用できなくなるという不具合
があった。However, the above-mentioned chromium mask has a drawback that the adhesion between the Cr and the quartz substrate is weak. Further, when foreign matter adheres to the mask, the Cr pattern is also removed when the foreign matter is removed, resulting in a so-called pattern defect, resulting in a defective product and making it unusable.
本発明は、上記の事情に鑑みなされたもので、基板の上
にアルミニューム（Ａｊ）の薄膜で回路パターンを形成
し、さらにこの薄膜をアルミナ膜で被覆したものである
。The present invention was developed in view of the above circumstances, and consists of forming a circuit pattern on a substrate using a thin film of aluminum (Aj), and further covering this thin film with an alumina film.
その結果、温度変化による基板とＡｌ膜との寸法歪はア
ルミナ膜で固定されて従来のクロムマスクと同程度とな
る。As a result, the dimensional distortion between the substrate and the Al film due to temperature changes is fixed by the alumina film and becomes comparable to that of a conventional chrome mask.
以下、第１図（ａ）および（ｂ）の実施例をもとに本発
明を説明する。まず第１図°（ａ）のごとく石英基板（
１）上にアルミニューム（Ａｌ）の薄膜（３）で回路パ
ターンを形成する。ここで、前記ＡｌはＣｒに比べて石
英基板に対する密着強度が強（、本発明者等の実験でも
布によるＪ＠擦、綿棒による摩擦に対して、Ｃｒパター
ンでは剥がれが生じた場合があるのに対し、ＡＰを用い
たパターンでは剥がれが全く認められなかった。しかし
Ａｌは、表面が柔かいこと、＃４膨張係数が大きいこと
（α＝２０ｘｌＯ−＠／ ℃） 、摩擦に対し剥離はし
ないもののＡｌ表面に擦過傷が残ること、および石英基
板との熱膨張係数の差による寸法歪の大きいこと等の欠
点のあることが判った。The present invention will be explained below based on the embodiments shown in FIGS. 1(a) and 1(b). First, as shown in Figure 1 (a), the quartz substrate (
1) A circuit pattern is formed on the aluminum (Al) thin film (3). Here, Al has a stronger adhesion strength to the quartz substrate than Cr (and in experiments conducted by the present inventors, peeling may occur in the Cr pattern due to rubbing with a cloth or friction with a cotton swab). On the other hand, no peeling was observed in the pattern using AP. However, Al has a soft surface and a large #4 expansion coefficient (α = 20xlO-@/℃), so although it does not peel off due to friction, It was found that there were drawbacks such as scratches remaining on the Al surface and large dimensional distortion due to the difference in thermal expansion coefficient with the quartz substrate.
そこで、上記の決を改善するため、第１図（ａ）のＡｌ
パターンの表面に第１図（ｂ）に示すように、アルミナ
膜（４）を化学化成処理により形成した。Therefore, in order to improve the above solution, the Al
As shown in FIG. 1(b), an alumina film (4) was formed on the surface of the pattern by chemical conversion treatment.
このアルミナＦ！！ （４）の熱膨張係数ａはほぼ７ｘ
ｌＯ−’ ７℃であり、こればＣｒに比べてわずかに大
きいが遜色のないレベルである。さらに、前記アルミナ
膜（４）の硬度は石英よりも硬く （モース尺度の硬度
で石英が６〜７に対しアルミナは９）、またＳｉｇＩｔ
ａに対しても十分な強度を有している。このアルミナ膜
（４）によりＡｌ表面硬度が向上すること、および温度
変化に対するＡｌの膨張／収縮をアルミナ膜（４）が固
定してしまうこと等で、Ｃｒの場合と同程度の寸法歪に
することが可能となった。This alumina F! ! The thermal expansion coefficient a of (4) is approximately 7x
lO-' is 7°C, which is slightly larger than Cr, but on a comparable level. Furthermore, the hardness of the alumina film (4) is harder than quartz (quartz has a hardness of 6 to 7 on the Mohs scale, whereas alumina has a hardness of 9), and SigIt
It also has sufficient strength against a. This alumina film (4) improves the Al surface hardness, and the alumina film (4) fixes the expansion/contraction of Al due to temperature changes, resulting in dimensional distortion comparable to that of Cr. It became possible.
ここで、前記化学化成処理の方法としては、Ａｌの膜（
３）を例えば高湿の純水中に浸漬するだけでもよく、例
えば１００℃の沸騰純水中に高純度のＡｌを１分間浸漬
するだけで、約２，０ＯＯＡの厚さのアルミナ膜（４）
を得ろことができた。なお、純水の温度および浸漬時間
を変えることによりアルミナ膜（４）の厚さを自由に制
御することができる。Here, as the method of chemical conversion treatment, an Al film (
For example, by simply immersing high-purity Al in boiling pure water at 100°C for 1 minute, an alumina film (4 )
I was able to get it. Note that the thickness of the alumina film (4) can be freely controlled by changing the temperature of pure water and the immersion time.
また、説明の都合上Ａｌについて述べたが、これはＡ
Ｉ Ｓｉ、 Ａ Ｉ Ｔｉ、 Ａ Ｉ ５ｉＣｕ等化学
化成処理の可能なＡｌ合金であれば、何れでも良いこと
ば勿論であり、また基板材料も石英に限定されない乙と
も自明である。Also, for the sake of explanation, I mentioned Al, but this is
It goes without saying that any Al alloy that can be subjected to chemical conversion treatment, such as ISi, AITi, and AI5iCu, may be used, and it is also obvious that the substrate material is not limited to quartz.
本発明は、上述のごとく極めて単純な方法でクロムマス
クと同程度の寸法歪を有し、かつ剥離に対してはクロム
マスクより優れた特徴を有しているだけでなく、材料コ
ストの面からもＣｒに比べＡｌの方が安価であり、低価
格のマスク作製が可能である。As described above, the present invention not only has dimensional distortion comparable to that of a chrome mask using an extremely simple method and has better properties against peeling than a chrome mask, but also has a material cost advantage. Also, Al is cheaper than Cr, and low-cost masks can be manufactured.
第１図（ａ）および（ｂ）は本発明の一実施例による転
写マスクの断面図、第２図は従来のクロムマスクの断面
図である。
図中、（１）は石英基板、（２）はクローム（Ｃｒ）層
、（３）はアルミニューム（Ａ ｊ ） Ｒ，［４１は
アルミナ膜である。
なお、各図中同一符号は同一または相当部分を示す。FIGS. 1(a) and 1(b) are cross-sectional views of a transfer mask according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a conventional chrome mask. In the figure, (1) is a quartz substrate, (2) is a chromium (Cr) layer, (3) is aluminum (A j ) R, and [41 is an alumina film. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (2)
金を被着する工程、次に該Ａｌ又はＡｌ合金を所望のパ
ターンに形成する工程、次いで該Ａｌ又はＡｌ合金表面
に化学化成処理によりアルミナ被膜を形成する工程から
成ることを特徴とする転写マスクの製造方法。(1) A step of depositing aluminum (Al) or an Al alloy on an insulating substrate, a step of forming the Al or Al alloy into a desired pattern, and then a chemical conversion treatment to form aluminium on the surface of the Al or Al alloy. A method for manufacturing a transfer mask, comprising the step of forming a film.
ーム（Ａｌ）又はＡｌ合金のパターンを有することを特
徴とする転写マスク。(2) A transfer mask characterized by having an aluminum (Al) or Al alloy pattern covered with an alumina film on an insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60174983A JPS6236669A (en) | 1985-08-10 | 1985-08-10 | Transfer mask and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60174983A JPS6236669A (en) | 1985-08-10 | 1985-08-10 | Transfer mask and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6236669A true JPS6236669A (en) | 1987-02-17 |
Family
ID=15988167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60174983A Pending JPS6236669A (en) | 1985-08-10 | 1985-08-10 | Transfer mask and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236669A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002251000A (en) * | 2001-02-26 | 2002-09-06 | Semiconductor Leading Edge Technologies Inc | Method of manufacturing phase shift mask, phase shift mask, phase shift mask blank and method of manufacturing semiconductor device |
| JP2010026398A (en) * | 2008-07-23 | 2010-02-04 | Sk Electronics:Kk | Mask substrate, mask blank, exposure method, and method for manufacturing device |
| JP2019215467A (en) * | 2018-06-14 | 2019-12-19 | 大日本印刷株式会社 | Photomask and photomask blank |
-
1985
- 1985-08-10 JP JP60174983A patent/JPS6236669A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002251000A (en) * | 2001-02-26 | 2002-09-06 | Semiconductor Leading Edge Technologies Inc | Method of manufacturing phase shift mask, phase shift mask, phase shift mask blank and method of manufacturing semiconductor device |
| JP2010026398A (en) * | 2008-07-23 | 2010-02-04 | Sk Electronics:Kk | Mask substrate, mask blank, exposure method, and method for manufacturing device |
| JP2019215467A (en) * | 2018-06-14 | 2019-12-19 | 大日本印刷株式会社 | Photomask and photomask blank |
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