JPS6225254B2 - - Google Patents
Info
- Publication number
- JPS6225254B2 JPS6225254B2 JP5647377A JP5647377A JPS6225254B2 JP S6225254 B2 JPS6225254 B2 JP S6225254B2 JP 5647377 A JP5647377 A JP 5647377A JP 5647377 A JP5647377 A JP 5647377A JP S6225254 B2 JPS6225254 B2 JP S6225254B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- reaction
- reaction vessel
- gas
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 12
- 238000010574 gas phase reaction Methods 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000012808 vapor phase Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5647377A JPS53142177A (en) | 1977-05-18 | 1977-05-18 | Vapor-phase reaction device for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5647377A JPS53142177A (en) | 1977-05-18 | 1977-05-18 | Vapor-phase reaction device for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53142177A JPS53142177A (en) | 1978-12-11 |
| JPS6225254B2 true JPS6225254B2 (enrdf_load_stackoverflow) | 1987-06-02 |
Family
ID=13028065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5647377A Granted JPS53142177A (en) | 1977-05-18 | 1977-05-18 | Vapor-phase reaction device for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53142177A (enrdf_load_stackoverflow) |
-
1977
- 1977-05-18 JP JP5647377A patent/JPS53142177A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53142177A (en) | 1978-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20000064976A (ko) | 기판의 온도측정기, 기판의 온도를 측정하는 방법, 기판의 가열방법, 및 열처리장치 | |
| JPS6225254B2 (enrdf_load_stackoverflow) | ||
| JP3075254B2 (ja) | ランプアニール装置 | |
| KR20070011505A (ko) | 반도체 장치의 제조방법 및 제조장치 | |
| JPS6225253B2 (enrdf_load_stackoverflow) | ||
| JP2001118839A (ja) | 半導体用熱処理装置および半導体基板の熱処理方法 | |
| JP3221129B2 (ja) | 半導体装置の製法 | |
| JP3138304B2 (ja) | 熱処理装置 | |
| JP2000031227A (ja) | 重金属モニタ用のウエーハとこのウエーハの製造方法 | |
| JPH0480880B2 (enrdf_load_stackoverflow) | ||
| JP3182532B2 (ja) | 熱処理装置 | |
| JP3151022B2 (ja) | 熱処理装置 | |
| JP3451097B2 (ja) | 熱処理装置 | |
| US20030059993A1 (en) | Method of manufacturing semiconductor device | |
| JPH05206043A (ja) | 熱処理方法 | |
| JPS5650573A (en) | Mis tunnel diode type mosfet | |
| JPH07297201A (ja) | 半導体基板の熱処理方法及び熱処理装置 | |
| JPH027516A (ja) | 半導体に於ける不純物の拡散方法 | |
| JP6731878B2 (ja) | 横型酸化拡散炉 | |
| JP2967593B2 (ja) | 開管式プレデポジション拡散方法 | |
| JPS63181315A (ja) | 熱処理装置 | |
| JPS594059A (ja) | 半導体装置の製造方法 | |
| JPH0744158B2 (ja) | 半導体素子の製造炉 | |
| JPS57130471A (en) | Manufacture of metal oxide semiconductor field-effect transistor | |
| JP2004356361A (ja) | 半導体装置の製造方法 |