JPS6224877B2 - - Google Patents

Info

Publication number
JPS6224877B2
JPS6224877B2 JP57017676A JP1767682A JPS6224877B2 JP S6224877 B2 JPS6224877 B2 JP S6224877B2 JP 57017676 A JP57017676 A JP 57017676A JP 1767682 A JP1767682 A JP 1767682A JP S6224877 B2 JPS6224877 B2 JP S6224877B2
Authority
JP
Japan
Prior art keywords
transistor
current
collector
emitter
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57017676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58137185A (ja
Inventor
Yasusuke Yamamoto
Hiroshi Myanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57017676A priority Critical patent/JPS58137185A/ja
Publication of JPS58137185A publication Critical patent/JPS58137185A/ja
Publication of JPS6224877B2 publication Critical patent/JPS6224877B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57017676A 1982-02-08 1982-02-08 バイポ−ラramの高速読み出し回路 Granted JPS58137185A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57017676A JPS58137185A (ja) 1982-02-08 1982-02-08 バイポ−ラramの高速読み出し回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57017676A JPS58137185A (ja) 1982-02-08 1982-02-08 バイポ−ラramの高速読み出し回路

Publications (2)

Publication Number Publication Date
JPS58137185A JPS58137185A (ja) 1983-08-15
JPS6224877B2 true JPS6224877B2 (enrdf_load_stackoverflow) 1987-05-30

Family

ID=11950452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57017676A Granted JPS58137185A (ja) 1982-02-08 1982-02-08 バイポ−ラramの高速読み出し回路

Country Status (1)

Country Link
JP (1) JPS58137185A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS58137185A (ja) 1983-08-15

Similar Documents

Publication Publication Date Title
US4078261A (en) Sense/write circuits for bipolar random access memory
EP0023792B1 (en) Semiconductor memory device including integrated injection logic memory cells
US4027176A (en) Sense circuit for memory storage system
US3973246A (en) Sense-write circuit for bipolar integrated circuit ram
JPH0316717B2 (enrdf_load_stackoverflow)
US5016214A (en) Memory cell with separate read and write paths and clamping transistors
JPS6331879B2 (enrdf_load_stackoverflow)
US5359553A (en) Low power ECL/MOS level converting circuit and memory device and method of converting a signal level
JPH0810556B2 (ja) 半導体メモリ回路
US3821719A (en) Semiconductor memory
JPH0529994B2 (enrdf_load_stackoverflow)
JP2548737B2 (ja) ドライバ回路
EP0023408B1 (en) Semiconductor memory device including integrated injection logic memory cells
JPS6224877B2 (enrdf_load_stackoverflow)
US4456979A (en) Static semiconductor memory device
JPH0210518B2 (enrdf_load_stackoverflow)
US4964081A (en) Read-while-write ram cell
JPS62129996A (ja) 可変行励振を有するメモリセル
US5251173A (en) High-speed, low DC power, PNP-loaded word line decorder/driver circuit
JPH0152834B2 (enrdf_load_stackoverflow)
US4899311A (en) Clamping sense amplifier for bipolar ram
JPH0259557B2 (enrdf_load_stackoverflow)
JP2556014B2 (ja) 半導体集積回路装置
JPH0241112B2 (enrdf_load_stackoverflow)
JP2526890B2 (ja) 半導体メモリ装置