JPS62247566A - 静電誘導サイリスタ - Google Patents
静電誘導サイリスタInfo
- Publication number
- JPS62247566A JPS62247566A JP19629286A JP19629286A JPS62247566A JP S62247566 A JPS62247566 A JP S62247566A JP 19629286 A JP19629286 A JP 19629286A JP 19629286 A JP19629286 A JP 19629286A JP S62247566 A JPS62247566 A JP S62247566A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- cathode
- anode
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629286A JPS62247566A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19629286A JPS62247566A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP836679A Division JPS5599774A (en) | 1979-01-26 | 1979-01-26 | Electrostatic induction type thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62247566A true JPS62247566A (ja) | 1987-10-28 |
| JPH022306B2 JPH022306B2 (enExample) | 1990-01-17 |
Family
ID=16355375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19629286A Granted JPS62247566A (ja) | 1986-08-21 | 1986-08-21 | 静電誘導サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62247566A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0374877A (ja) * | 1989-08-15 | 1991-03-29 | Matsushita Electric Works Ltd | 半導体装置 |
| EP1261034A3 (en) * | 1992-03-04 | 2003-04-16 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction thyristor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120780A (enExample) * | 1974-03-08 | 1975-09-22 | ||
| JPS52135277A (en) * | 1976-05-06 | 1977-11-12 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS54113273A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Field effect-type switching element |
-
1986
- 1986-08-21 JP JP19629286A patent/JPS62247566A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50120780A (enExample) * | 1974-03-08 | 1975-09-22 | ||
| JPS52135277A (en) * | 1976-05-06 | 1977-11-12 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS54113273A (en) * | 1978-02-24 | 1979-09-04 | Hitachi Ltd | Field effect-type switching element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0374877A (ja) * | 1989-08-15 | 1991-03-29 | Matsushita Electric Works Ltd | 半導体装置 |
| EP1261034A3 (en) * | 1992-03-04 | 2003-04-16 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH022306B2 (enExample) | 1990-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6221275B2 (enExample) | ||
| KR100214207B1 (ko) | 반도체장치 및 그의 제조방법 | |
| KR100223198B1 (ko) | 높은 강복 전압을 갖는 반도체 장치 및 그 제조 방법 | |
| CN1967868B (zh) | 半导体装置及其制造方法 | |
| JP6728953B2 (ja) | 半導体装置及びその製造方法 | |
| US5962893A (en) | Schottky tunneling device | |
| JPH10209432A (ja) | 半導体デバイスの改良 | |
| US9502547B2 (en) | Charge reservoir IGBT top structure | |
| US11522075B2 (en) | Semiconductor device and method of manufacturing same | |
| US7816706B2 (en) | Power semiconductor device | |
| US9806152B2 (en) | Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base | |
| US5773851A (en) | Semiconductor device and manufacturing method thereof | |
| US5387805A (en) | Field controlled thyristor | |
| KR0146640B1 (ko) | 전압구동형 사이리스터와 그 제조방법 | |
| JPH098301A (ja) | 電力用半導体装置 | |
| JP2010206111A (ja) | 半導体装置 | |
| JP7156425B2 (ja) | 半導体装置 | |
| JP7721982B2 (ja) | 半導体装置 | |
| JP3329642B2 (ja) | 半導体装置 | |
| JP3189576B2 (ja) | 半導体装置 | |
| JPS62247566A (ja) | 静電誘導サイリスタ | |
| JPH1168123A (ja) | 半導体装置 | |
| JP3214242B2 (ja) | 半導体装置 | |
| TW201903956A (zh) | 具有帶錐形氧化物厚度的多晶矽填充渠溝的功率元件 | |
| JPS639386B2 (enExample) |