JPS62240953A - レジスト - Google Patents

レジスト

Info

Publication number
JPS62240953A
JPS62240953A JP61051533A JP5153386A JPS62240953A JP S62240953 A JPS62240953 A JP S62240953A JP 61051533 A JP61051533 A JP 61051533A JP 5153386 A JP5153386 A JP 5153386A JP S62240953 A JPS62240953 A JP S62240953A
Authority
JP
Japan
Prior art keywords
resist
polymer
copolymer
units
repeating unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61051533A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0453419B2 (enrdf_load_stackoverflow
Inventor
Kiyoshi Oguchi
小口　清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Priority to JP61051533A priority Critical patent/JPS62240953A/ja
Publication of JPS62240953A publication Critical patent/JPS62240953A/ja
Publication of JPH0453419B2 publication Critical patent/JPH0453419B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP61051533A 1986-03-11 1986-03-11 レジスト Granted JPS62240953A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61051533A JPS62240953A (ja) 1986-03-11 1986-03-11 レジスト

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61051533A JPS62240953A (ja) 1986-03-11 1986-03-11 レジスト

Publications (2)

Publication Number Publication Date
JPS62240953A true JPS62240953A (ja) 1987-10-21
JPH0453419B2 JPH0453419B2 (enrdf_load_stackoverflow) 1992-08-26

Family

ID=12889658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61051533A Granted JPS62240953A (ja) 1986-03-11 1986-03-11 レジスト

Country Status (1)

Country Link
JP (1) JPS62240953A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001037047A3 (en) * 1999-11-17 2002-03-28 Du Pont Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography
JP2002214788A (ja) * 2000-09-11 2002-07-31 Sumitomo Chem Co Ltd ポジ型レジスト組成物
WO2002069043A3 (en) * 2001-02-23 2003-04-03 Massachusetts Inst Technology Low absorbing resists for 157 nm lithography
DE4207264B4 (de) * 1992-03-07 2005-07-28 Clariant Gmbh Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
US6951705B2 (en) 2000-05-05 2005-10-04 E. I. Du Pont De Nemours And Company Polymers for photoresist compositions for microlithography
EP2144116A1 (en) 2008-07-11 2010-01-13 Shinetsu Chemical Co., Ltd. Chemically-amplified positive resist composition and patterning process thereof
EP2146247A1 (en) 2008-07-11 2010-01-20 Shin-Etsu Chemical Co., Ltd. Resist patterning process and manufacturing photo mask

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207264B4 (de) * 1992-03-07 2005-07-28 Clariant Gmbh Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
WO2001037047A3 (en) * 1999-11-17 2002-03-28 Du Pont Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography
US6503686B1 (en) 1999-11-17 2003-01-07 E. I. Du Pont De Nemours And Company Nitrile/fluoroalcohol-containing photoresists and associated processes for microlithography
US6951705B2 (en) 2000-05-05 2005-10-04 E. I. Du Pont De Nemours And Company Polymers for photoresist compositions for microlithography
JP2002214788A (ja) * 2000-09-11 2002-07-31 Sumitomo Chem Co Ltd ポジ型レジスト組成物
WO2002069043A3 (en) * 2001-02-23 2003-04-03 Massachusetts Inst Technology Low absorbing resists for 157 nm lithography
EP2144116A1 (en) 2008-07-11 2010-01-13 Shinetsu Chemical Co., Ltd. Chemically-amplified positive resist composition and patterning process thereof
EP2146247A1 (en) 2008-07-11 2010-01-20 Shin-Etsu Chemical Co., Ltd. Resist patterning process and manufacturing photo mask
US8110335B2 (en) 2008-07-11 2012-02-07 Shin-Etsu Chemical Co., Ltd. Resist patterning process and manufacturing photo mask
US8202677B2 (en) 2008-07-11 2012-06-19 Shin-Etsu Chemical Co., Ltd. Chemically-amplified positive resist composition and patterning process thereof

Also Published As

Publication number Publication date
JPH0453419B2 (enrdf_load_stackoverflow) 1992-08-26

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