JPS62239446A - Production of master stamper for optical memory - Google Patents
Production of master stamper for optical memoryInfo
- Publication number
- JPS62239446A JPS62239446A JP8301486A JP8301486A JPS62239446A JP S62239446 A JPS62239446 A JP S62239446A JP 8301486 A JP8301486 A JP 8301486A JP 8301486 A JP8301486 A JP 8301486A JP S62239446 A JPS62239446 A JP S62239446A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist
- stamper
- exposed
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 230000003287 optical effect Effects 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 claims abstract description 6
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000005323 electroforming Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- PMJNEQWWZRSFCE-UHFFFAOYSA-N 3-ethoxy-3-oxo-2-(thiophen-2-ylmethyl)propanoic acid Chemical compound CCOC(=O)C(C(O)=O)CC1=CC=CS1 PMJNEQWWZRSFCE-UHFFFAOYSA-N 0.000 description 1
- 208000001132 Osteoporosis Diseases 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔元ヶ泡上の利用分野〕 する。[Detailed description of the invention] [Fields of use on Motogaawa] do.
従来の光メモリー用マザースタンパの#遣方法はガラス
原盤にポジ型のホトレジスト’2コートし、露光、現像
してグループ及びビット全形成し、その上に導体化皮膜
全形成し、処理の厚みにNi電鋳ノー全形成し% Ni
[錆層をガラス原盤からはがすとマザースタンパが出来
る。The conventional method for using a mother stamper for optical memory is to coat a glass master with positive type photoresist '2, expose and develop it to form all the groups and bits, and then completely form a conductive film on top of it, and then apply it to the thickness of the process. Ni electroforming not fully formed %Ni
[Remove the rust layer from the glass master to form a mother stamper.
次に、上記マザースタンパを5%の重クロム酸水溶准に
よる離型処理會してマザースタンパに処理の厚みにNi
電鋳層會形成する。Next, the mother stamper was subjected to a mold release treatment using a 5% aqueous solution of dichromic acid, and the mother stamper was coated with Ni to the thickness of the treatment.
Form an electroformed layer.
上記マザースタンパからNi電鋳層ケはがすとサブマザ
ーが出来る。When the Ni electroformed layer is peeled off from the mother stamper, a sub-mother is formed.
次に、上記サブマザーに重クロム酸による雌型処理?し
て、処理の厚みにNi電鋳漕全形成する。Next, the female mold treatment with dichromic acid on the above sub-mother? Then, the Ni electroforming tank is completely formed to the thickness of the treatment.
上記、サブマザーからNi屯g層をはがすとスタンパが
出来る。As mentioned above, when the Ni layer is peeled off from the sub-mother, a stamper is formed.
C!iる明が解決しようとする問題点〕しかし、前述の
従来技術では、スタンパを作る/7)177″N4’:
)!′i14スーXl「1.1ン、aL4LL+4’y
r!1.4+、−+Knnμ以上の厚みに電鋳するので
1回電鋳するのに、最低でも2〜5時間要する。C! [Problems to be solved by Irumei] However, in the above-mentioned conventional technology, the stamper is made /7) 177″N4′:
)! 'i14 Sue Xl '1.1n, aL4LL+4'y
r! Since electroforming is performed to a thickness of 1.4+, -+Knnμ or more, it takes at least 2 to 5 hours to perform electroforming once.
このように長時間工程が3回もあるということは製造上
非常に問題である。すなわち量産性に乏しいのでたくさ
んの装置を必要となジ装置6コストがかさみ、また工程
が長いので歩留りも低くなり、製造コストがかさんでし
まう。The fact that three long processes are required is a serious problem in manufacturing. In other words, since it is not suitable for mass production, a large number of devices are required, which increases the cost of the device, and the process is long, resulting in a low yield and an increase in manufacturing costs.
また、納期的にも電鋳が3回も必要となるので、Mdす
るのに2日も要する。Also, in terms of delivery time, electroforming is required three times, so it takes two days to Md.
そこで本発明はこのような問題点全解決するもので、そ
の目的とするところはスタンパで作るのに従来法では電
鋳を3回していたもの?1回ですませることにより、装
+It’N用が少なく、低コストのスタンパを供給する
と共に、製造納期の短縮化で可能にするところにある。Therefore, the present invention is intended to solve all of these problems, and its purpose is to produce products using a stamper, which in the conventional method required electroforming three times. By completing the process only once, it is possible to supply a low-cost stamper with less mounting + It'N use, and to shorten the manufacturing delivery time.
本発明の元メモリー用スタンパは鏡面に鏝かれたガラス
原盤上に500A以上のCr4層?層成形成その上に所
望する祥深さと同じ厚みにNip層ケ形成し、ホトレジ
スト?!−塗布して露光、現1!シ、露出したNi4ハ
if逆スパツタによるドライエツチング法でエツチング
してグループ及びビット形状全形成したホトレジスト?
除去後、重クロム酸による離型処理を行ない、その上に
所望の厚みのNi゛厄g層ケ離型処理面からはくりした
こと?特徴とする。The original memory stamper of the present invention is a Cr4 layer of 500A or more on a glass master disk troweled to a mirror surface. On top of that, a NIP layer is formed to the same thickness as the desired depth, and then photoresist is applied. ! -Coat and expose, now 1! Is the photoresist etched by a dry etching method using exposed Ni4 high-if reverse spatter to form all the group and bit shapes?
After removal, a mold release treatment was performed using dichromic acid, and a Ni layer of the desired thickness was peeled off from the mold release treatment surface. Features.
本発明の上記の構成によnば、ガラス原盤上に金属iU
−でグループ及びビットが形成されておりしかも全面金
属#層におおわれているので、その表面に重クロム酸に
よるllI型処理を施し、処理の厚みにNi電鋳層會形
成し、Ni電鋳錆層ガラス原雑マスターからはがすと離
型処理した面からはがれ、1つのガラス原盤マスターか
ら何回も複製が可能になる。すなわちガラス原盤マスタ
ーから1回のKMでスタンパが↑【製出来るのである。According to the above configuration of the present invention, metal iU is formed on the glass master disk.
Groups and bits are formed in -, and the entire surface is covered with a metal # layer, so the surface is subjected to III type treatment with dichromic acid, a Ni electroformed layer is formed to the thickness of the treatment, and Ni electroformed rust is formed. When peeled off from the layered glass master, it peels off from the release-treated surface, making it possible to make multiple copies from one glass master. In other words, a stamper can be manufactured from a glass master in one KM.
まず、少なくとも片面が鏡面にt謄かれているφ200
m%厚み6鴎早 のガラス原盤1にCrO薄Pa2′に
500八以上の厚みに、更にその上にNi薄II@ 5
k所望のグループ及びビット深さと同じ厚みに形成す
る。上記金属#膜の形成方法は蒸層チ、スパッタ法が奇
骨性、外jId上の点から好ましい。次に、Ni博ノ漢
6表面にλ000〜400 OAの厚みにホトレジスト
4をコートしてやる。レジストの塗布方法はスピンコー
ド法が好ましい。この場合ホトレジスト4の厚みは多少
ばらついてもかまわない。使用するホトレジスト4はヘ
キスト社のAz−1350ポジレジストが適している。First, φ200 with at least one side mirrored.
Glass master disk 1 with a thickness of 6 m% is coated with CrO thin Pa2' to a thickness of 5008 or more, and then Ni thin II@5 on top of it.
k Formed to have the same thickness as the desired group and bit depth. As the method for forming the metal # film, vapor deposition and sputtering are preferred from the viewpoint of osteoporosis and external factors. Next, the surface of the Ni Hironokan 6 is coated with a photoresist 4 to a thickness of λ000 to 400 OA. The preferred method for applying the resist is a spin code method. In this case, the thickness of the photoresist 4 may vary somewhat. As the photoresist 4 used, Az-1350 positive resist manufactured by Hoechst is suitable.
次に、90℃、50分の条件でブレベーク勿し、専用の
ンーザーカツテングM/C′に用いて露光する。Next, the film was exposed to light using a special laser cutter M/C' without being subjected to a brebake at 90° C. for 50 minutes.
ビット及びグループが形成される部分に波長が4500
11t近のレーザーが照射される。The wavelength is 4500 in the part where bits and groups are formed.
Nearly 11 tons of laser light will be irradiated.
次に、専用の現像液?用いて、現像する。現像方法はス
プレー法が好ましい。現像後レジストの密層性を高める
ために120℃、30分のポストベーク勿行なう。Next, a special developer? Use it to develop. The preferred developing method is a spray method. After development, post-baking is performed at 120° C. for 30 minutes to increase the layer density of the resist.
次に、逆スパツタによるドライエツチング装mk用いて
、ホトレジスト4が部分的に覆われていなr N (、
J m 5州(昼のみエツチングにてビット居rドグル
ープを形成する。エツチング方式としては不活性界囲で
のイオンビームエツチングがサイドエッチが非常に少な
いこと微測化度の点において優れている。Next, the photoresist 4 is partially uncovered using a dry etching device mk using reverse sputtering.
J m 5 (Bit group is formed by daytime etching.Ion beam etching in an inert environment is superior in terms of very little side etching and fine graining. .
代々ト1りなエツチング条件は不活性ガスはAr、イオ
ンエネルギーは500 eV、入射角は直角、イオン′
イ流密度は10A/。lである。The etching conditions that have remained the same for generations are Ar inert gas, ion energy 500 eV, normal incidence angle, and ion
The current density is 10A/. It is l.
Ni薄11弾6の下にCr薄膜2才形成した理由には2
つある。1つは、Niに較べてCrのエツチング速度が
痒いこと?利用し、Niのエツチング速度に合わせてN
iのエツチング時間?決めてやるとNiのみがエツチン
グされ、Cjrがほとんどエツチングされないので、ビ
ット及びグループの深さが均一になる。2つはNi薄1
i!65 kエツチングしてガラス表面がでてしまうと
その部分にはめつき刀よされないので次工程のNi′市
鋳が一丁能になるための得体化処理膜としての役目であ
る。There are two reasons why a Cr thin film was formed under the Ni thin 11 bullet 6.
There is one. One is that the etching speed of Cr is slower than that of Ni. N
i's etching time? Once determined, only Ni is etched and Cjr is hardly etched, so the depths of bits and groups become uniform. 2 are Ni thin 1
i! If the glass surface is exposed during 65k etching, it will not stick to that part and will not be removed, so it serves as a solidification treatment film to make the Ni' cast in the next step more effective.
次に、ホトレジスト4を化学的に除去する。ホトレジス
ト、4の除去にはアセトン、ピロリドンなどの有1浚溶
剤が適している。Next, the photoresist 4 is chemically removed. Dredging solvents such as acetone and pyrrolidone are suitable for removing the photoresist.
次に、金属薄膜表面に離型処理全行す。離型処理方法は
屯クロム酸による処理が適している。5X点クロム酸ア
ンモニウム水溶液に1分間浸面することにより充分な離
型処理皮膜が形成される。Next, the entire surface of the metal thin film is subjected to mold release treatment. As the mold release treatment method, treatment with tunic chromic acid is suitable. By immersing the surface in the 5X point ammonium chromate aqueous solution for 1 minute, a sufficient mold release treatment film is formed.
次に、離型処理後、Nig鋳層錆層毛足の厚みに形成す
る。Next, after a mold release treatment, a Nig cast layer rust layer is formed to the thickness of the pile.
次に、Niを携虐5葡離型処理而からはがすと1枚目の
スタンパが出来る。Next, the first stamper is created by peeling off the Ni from the mold.
残ったガラス原盤マスターに再びNi電鋳層5を形成す
ると2枚目のスタンパが出来る。By forming the Ni electroforming layer 5 again on the remaining glass master, a second stamper is completed.
以上のようにガラス原盤マスターから1回の電鋳て多数
の複製スタンパが出来る。As described above, a large number of duplicate stampers can be made from a glass master by one electroforming process.
以上述べ之ように本発明によれば、ガラス原盤に500
A以上のCr薄層を形成し、その上に所望する溝深さと
同じ厚みにNi薄膜?形成し、ホトレジストを塗布して
露光、現像し、露出したNi薄膜金逆スパッタによるド
ライエツチング法でエツチングしてグループ及びピット
全形成し、ホトレジストヲ除去後、クロム酸による離型
処理全行ない、その表面にNi菟′i)、jJ嗜に形成
し、N i 1IVAi層ケ難型処理而からはくすした
ことで特徴とする元メモリー用マザースタンパの製造方
法により、多数の包製スタンパが製造することt町11
目にしたものであり、1次コストで、品質の良いスタン
ノ(全短い袋iA網期で供給できるものである。As described above, according to the present invention, the glass master disc has a
Form a Cr thin layer of A or more, and then apply a Ni thin film on top of it to the same thickness as the desired groove depth. A photoresist is applied, exposed and developed, and the exposed Ni thin film is etched by a dry etching method using gold reverse sputtering to form all groups and pits. After the photoresist is removed, a mold release treatment with chromic acid is performed, and then A large number of packaged stampers are manufactured using a method for manufacturing a mother stamper for memory, which is characterized by forming Ni (Ni) and JJ on the surface and removing the Ni 1IVAi layer from the treatment that makes it difficult to form. Kotot Town 11
It is something that I have seen, and can be supplied in a short period of time with good quality at the primary cost.
第1図から第6図は本発明の光メモリー用マザースタン
パの製造方法を示す工程断面図である。
以上1 to 6 are process cross-sectional views showing the method for manufacturing a mother stamper for optical memory according to the present invention. that's all
Claims (1)
薄層を形成し、その上に所望する溝深さと同じ厚みにN
i薄層を形成し、ホトレジストを塗布して露光、現像し
、露出したNi薄層を逆スパッタによるドライエッチン
グ法でエッチングしてグループ及びピット形状を形成し
、ホトレジストを除去後、重クロム酸による離型処理を
行ないその上に所望の厚みにNi電鋳層を形成し、該N
i電鋳層を離型処理面からはくりしたことを特徴とする
光メモリー用マザースタンパの製造方法。1) Cr of 500 Å or more on a mirror-polished glass substrate
Form a thin layer and add N to the same thickness as the desired groove depth.
A thin Ni layer is formed, a photoresist is applied, exposed and developed, the exposed Ni thin layer is etched using a dry etching method using reverse sputtering to form groups and pit shapes, and after the photoresist is removed, it is etched using dichromic acid. After performing mold release treatment, a Ni electroformed layer is formed to a desired thickness on top of the mold release treatment, and the N
i. A method for producing a mother stamper for optical memory, characterized in that the electroformed layer is peeled off from the mold release treated surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8301486A JPS62239446A (en) | 1986-04-10 | 1986-04-10 | Production of master stamper for optical memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8301486A JPS62239446A (en) | 1986-04-10 | 1986-04-10 | Production of master stamper for optical memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62239446A true JPS62239446A (en) | 1987-10-20 |
Family
ID=13790390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8301486A Pending JPS62239446A (en) | 1986-04-10 | 1986-04-10 | Production of master stamper for optical memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62239446A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02198835A (en) * | 1989-01-27 | 1990-08-07 | Toppan Printing Co Ltd | Glass base plate for master |
-
1986
- 1986-04-10 JP JP8301486A patent/JPS62239446A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02198835A (en) * | 1989-01-27 | 1990-08-07 | Toppan Printing Co Ltd | Glass base plate for master |
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