JPS62235782A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62235782A
JPS62235782A JP61079419A JP7941986A JPS62235782A JP S62235782 A JPS62235782 A JP S62235782A JP 61079419 A JP61079419 A JP 61079419A JP 7941986 A JP7941986 A JP 7941986A JP S62235782 A JPS62235782 A JP S62235782A
Authority
JP
Japan
Prior art keywords
region
gate
impurity density
semiconductor device
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61079419A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0553073B2 (enrdf_load_stackoverflow
Inventor
Tomoyoshi Kushida
知義 櫛田
Hiroshi Tadano
博 只野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP61079419A priority Critical patent/JPS62235782A/ja
Priority to US06/912,578 priority patent/US4752818A/en
Publication of JPS62235782A publication Critical patent/JPS62235782A/ja
Publication of JPH0553073B2 publication Critical patent/JPH0553073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 

Landscapes

  • Thyristors (AREA)
JP61079419A 1985-09-28 1986-04-07 半導体装置 Granted JPS62235782A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP61079419A JPS62235782A (ja) 1986-04-07 1986-04-07 半導体装置
US06/912,578 US4752818A (en) 1985-09-28 1986-09-26 Semiconductor device with multiple recombination center layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61079419A JPS62235782A (ja) 1986-04-07 1986-04-07 半導体装置

Publications (2)

Publication Number Publication Date
JPS62235782A true JPS62235782A (ja) 1987-10-15
JPH0553073B2 JPH0553073B2 (enrdf_load_stackoverflow) 1993-08-09

Family

ID=13689346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61079419A Granted JPS62235782A (ja) 1985-09-28 1986-04-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS62235782A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01272157A (ja) * 1988-04-23 1989-10-31 Matsushita Electric Works Ltd 半導体装置
JPH02110971A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Works Ltd 半導体装置
US5025293A (en) * 1989-01-25 1991-06-18 Fuji Electric Co., Ltd. Conductivity modulation type MOSFET
US5075751A (en) * 1987-12-18 1991-12-24 Matsushita Electric Works, Ltd. Semiconductor device
JP2004510353A (ja) * 2000-09-29 2004-04-02 オイペク　オイロペーシェ　ゲゼルシャフト　フューア　ライストゥングスハルプライター　エムベーハー 縮小された平均自由行程長を有する半導体材料の直胴部
EP2172976A2 (en) 1998-09-10 2010-04-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor Device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108387A (en) * 1977-02-07 1978-09-21 Gen Electric Junction semiconductor and method of producing same
JPS5739577A (en) * 1980-06-27 1982-03-04 Westinghouse Electric Corp Method of reducing reverse recovery charge for thyristor
JPS6074443A (ja) * 1983-07-01 1985-04-26 ブラウン・ボバリ・ウント・シ−・アクチエンゲゼルシヤフト ｐｎ接合半導体素子及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108387A (en) * 1977-02-07 1978-09-21 Gen Electric Junction semiconductor and method of producing same
JPS5739577A (en) * 1980-06-27 1982-03-04 Westinghouse Electric Corp Method of reducing reverse recovery charge for thyristor
JPS6074443A (ja) * 1983-07-01 1985-04-26 ブラウン・ボバリ・ウント・シ−・アクチエンゲゼルシヤフト ｐｎ接合半導体素子及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075751A (en) * 1987-12-18 1991-12-24 Matsushita Electric Works, Ltd. Semiconductor device
JPH01272157A (ja) * 1988-04-23 1989-10-31 Matsushita Electric Works Ltd 半導体装置
JPH02110971A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Works Ltd 半導体装置
US5025293A (en) * 1989-01-25 1991-06-18 Fuji Electric Co., Ltd. Conductivity modulation type MOSFET
EP2172976A2 (en) 1998-09-10 2010-04-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor Device
JP2004510353A (ja) * 2000-09-29 2004-04-02 オイペク　オイロペーシェ　ゲゼルシャフト　フューア　ライストゥングスハルプライター　エムベーハー 縮小された平均自由行程長を有する半導体材料の直胴部

Also Published As

Publication number Publication date
JPH0553073B2 (enrdf_load_stackoverflow) 1993-08-09

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