JPS62235765A - Monolithic mirowave amplifier - Google Patents

Abstract

PURPOSE:To facilitate the process of adjusting electrical characteristics by a method wherein a plurality of contacts are provided in a capacitor base metal layer for connection with a micro-strip line and electrical connection is established by using a contact most suitable for electrical characteristics adjustment. CONSTITUTION:A capacitor 4b in a monolithic microwave amplifier constituted of an FET, micro.-line 6, and said capacitor ab, all installed on a semiconductor substrate, is built of a lower metal layer 8 formed on the semiconductor substrate and an upper metal layer formed opposite to said lower metal layer 8 through the intermediary of a dielectric layer. The lower metal layer 8 is provided with a plurality of contacts 9 capable of connection to a MICRO- STRIP line 6. One of the contacts 9 is used to establish connection with the micro-strip line 6. For example, when a measurement is accomplished of electrical characteristics after the production of a amplifier chip using a contact 9a and the conclusion is that the micro-strip line 6 needs to be augmented in length, a change is made for the use of contact 9c instead of the contact 9a.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a monolithic microwave amplifier constructed on a semiconductor substrate.
veamplifier), and in particular to the adjustment of its electrical characteristics.

[Conventional technology]

FIG. 2 is a schematic plan view showing a conventional device, and in the figure (1
) is the input end, (2) is the output end, (3) is the FET, (
4&).

(4b), (4c), and (4d) are capacitors, and (5) is a pad, and the pad (5) is connected to the ground potential. (6) constitutes a distributed constant circuit that transmits microwaves through a microstrip line.

FIG. 3 is a schematic plan view (FIG. 3(a)) and a schematic elevational view (FIG. 3(b)) showing the structure of the capacitor in FIG. 2. In FIG. 3, the same reference numerals as in FIG. Showing the same parts, (7) is the upper metal layer constituting the capacitor, (8) is also the base metal layer, (9a) is the contact part, (1 is the dielectric material. Upper metal layer (7) and the base metal layer 18), the microstrip line (6) is connected to the base metal layer (8) by the contact portion (9a), and the base metal layer (7) is connected to the capacitor ( 4a) is connected to the input end (1), the capacitor (4b) is connected to the output end (2), and the capacitors (4c) and (4d) are connected to the ground potential via the pad (5).

By the way, in general, in monolithic microwave amplifiers, after the integrated circuit chip is manufactured, its electrical characteristics are measured, and if it is necessary to modify the electrical characteristics of the manufactured chip, the mask of the microstrip line is changed, and the integrated circuit chip is The circuit chip was remanufactured.

FIG. 4 is a schematic plan view showing modification of electrical characteristics in a conventional monolithic microwave amplifier. In FIG. 4, the same reference numerals as in FIG.
) was manufactured, its electrical characteristics were measured, and the microstrip line (6) was modified as shown in FIG. 4 1al according to the measurement results.

[Problem that the invention seeks to solve]

In the conventional monolithic microwave amplifier, there is only one contact part for connecting the base metal layer of one capacitor to the microstrip line (6), so the fourth circuit from the circuit shown in FIG. When modifying the circuit shown in Figure 1), there is a problem in that the range in which the entire modified microstrip line (6) can be formed is restricted, and as a result, it becomes difficult to modify the circuit to obtain the desired electrical characteristics. Ta.

The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a monolithic microwave amplifier whose electrical characteristics can be easily modified.

[Means for solving problems]

In this invention, a plurality of contact portions for connecting to the microstrip line are provided in the base metal layer of the capacitor, and the connection to the microstrip line is made at the contact portion most suitable for fully adjusting the electrical characteristics.

[Effect]

Regarding the contact part for connecting to the capacitor,
Selecting a contact part provided in a different position K
Therefore, the shape of the microstrip line can be changed significantly, and the electrical characteristics can be easily modified.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic plan view showing one embodiment of the present invention,
A case is shown in which the configuration shown in FIG. 1 [al] is modified to the configuration shown in FIG. 1 [bl] in order to modify the electrical characteristics. In FIG. 1, the same symbols as in FIGS. 2 and 3 indicate the same parts,
(9a), (9b), and (9c) are respective contact portions provided in different portions of the base metal layer (8), respectively.

In Fig. 4 1al, the contact part (9a) e was used, but as a result of measuring the electrical characteristics after manufacturing the chip of this amplifier, it was found that the length of the microstrip line (6) leading to this capacitor (4b) was It was determined that it was necessary to increase the length of the microstrip line (6), so the length of the microstrip line (6) was easily increased by using a contact portion (9c)i as shown in FIG.

Although the embodiment shown in FIG. 1 shows a case in which one capacitor is provided with three contact portions, there are no limitations on the number of contact portions and their positions.

Furthermore, although the above embodiment has been described as an amplifier, the present invention can be applied to all circuits that require adjustment of the electrical characteristics of the circuit, such as oscillators and frequency multipliers. Since a multiplier also has an amplification effect, the amplifier referred to in this specification includes such an oscillator and frequency multiplier.

〔Effect of the invention〕

As described above, according to the present invention, a plurality of contact portions for connecting to the microstrip line are provided on the base metal layer of the capacitor, so the degree of freedom in the size and arrangement of the microstrip line is increased, and electrical characteristics can be modified. has become easier.

[Brief explanation of drawings]

FIG. 1 is a schematic plan view showing one embodiment of the present invention. FIG. 2 is a schematic plan view showing a conventional device, FIG. 3 is a schematic plan view showing a conventional configuration of the capacitor shown in FIG. 2, and FIG. 4 is a schematic plan view showing modification of electrical characteristics in the conventional device. (1) is the input end, (2) is the output end, (3) is FE'r,
(4a), (4b). (4c) and (4d) are capacitors, (5) is a pad, (6) is a micros) IJ tube line, (7) is an upper metal layer, (8) is an underlying metal layer, (9a), ( 9b)
, (9c) are contact parts, and (1 is a dielectric body. In each figure, the same reference numerals indicate the same or lower part.

Claims (1)

[Claims] A monolithic microwave amplifier configured by forming an FET (field effect transistor), a microstrip line, and a capacitor on a semiconductor substrate, wherein the capacitor is a base metal formed on the semiconductor substrate. and a base metal layer provided at a position opposite to the base metal layer via a dielectric layer in a direction perpendicular to the plane of the semiconductor substrate, and the base metal layer includes the microstrips. A monolithic microwave amplifier characterized in that a plurality of contact portions to which a line can be connected are provided, and the strip line is connected to an arbitrary contact portion selected from the plurality of contact portions.