JPS6223397B2 - - Google Patents

Info

Publication number
JPS6223397B2
JPS6223397B2 JP56090102A JP9010281A JPS6223397B2 JP S6223397 B2 JPS6223397 B2 JP S6223397B2 JP 56090102 A JP56090102 A JP 56090102A JP 9010281 A JP9010281 A JP 9010281A JP S6223397 B2 JPS6223397 B2 JP S6223397B2
Authority
JP
Japan
Prior art keywords
sense
refresh
amplifier
signal
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56090102A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57203290A (en
Inventor
Koichiro Masuko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56090102A priority Critical patent/JPS57203290A/ja
Publication of JPS57203290A publication Critical patent/JPS57203290A/ja
Publication of JPS6223397B2 publication Critical patent/JPS6223397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP56090102A 1981-06-09 1981-06-09 Ic memory Granted JPS57203290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56090102A JPS57203290A (en) 1981-06-09 1981-06-09 Ic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56090102A JPS57203290A (en) 1981-06-09 1981-06-09 Ic memory

Publications (2)

Publication Number Publication Date
JPS57203290A JPS57203290A (en) 1982-12-13
JPS6223397B2 true JPS6223397B2 (cs) 1987-05-22

Family

ID=13989148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090102A Granted JPS57203290A (en) 1981-06-09 1981-06-09 Ic memory

Country Status (1)

Country Link
JP (1) JPS57203290A (cs)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0632217B2 (ja) * 1981-06-29 1994-04-27 富士通株式会社 半導体記憶装置
JPS6117292A (ja) * 1984-07-04 1986-01-25 Hitachi Ltd 半導体記憶装置
JPS61160894A (ja) * 1985-01-09 1986-07-21 Nec Corp 半導体メモリ
JPS61220192A (ja) * 1985-03-27 1986-09-30 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS62241198A (ja) * 1986-04-14 1987-10-21 Hitachi Ltd ダイナミツク型ｒａｍ
JPS62291792A (ja) * 1986-06-11 1987-12-18 Nec Corp ダイナミツク型半導体記憶装置
JPS6337894A (ja) * 1986-07-30 1988-02-18 Mitsubishi Electric Corp ランダムアクセスメモリ
JPH0758589B2 (ja) * 1987-04-03 1995-06-21 三菱電機株式会社 半導体記憶装置
JP2712175B2 (ja) * 1987-05-06 1998-02-10 三菱電機株式会社 半導体記憶装置
JPS6484496A (en) * 1987-09-26 1989-03-29 Mitsubishi Electric Corp Semiconductor memory
KR100213602B1 (ko) * 1988-05-13 1999-08-02 가나이 쓰도무 다이나믹형 반도체 기억장치
US6212089B1 (en) 1996-03-19 2001-04-03 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
KR0141495B1 (ko) * 1988-11-01 1998-07-15 미다 가쓰시게 반도체 기억장치 및 그 결함구제방법

Also Published As

Publication number Publication date
JPS57203290A (en) 1982-12-13

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