JPS62227089A - 表面処理方法および装置 - Google Patents

表面処理方法および装置

Info

Publication number
JPS62227089A
JPS62227089A JP6964686A JP6964686A JPS62227089A JP S62227089 A JPS62227089 A JP S62227089A JP 6964686 A JP6964686 A JP 6964686A JP 6964686 A JP6964686 A JP 6964686A JP S62227089 A JPS62227089 A JP S62227089A
Authority
JP
Japan
Prior art keywords
discharge
plasma
substrate
lte
surface treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6964686A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558072B2 (cs
Inventor
Atsushi Sekiguchi
敦 関口
Hideo Mito
三戸　英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP6964686A priority Critical patent/JPS62227089A/ja
Publication of JPS62227089A publication Critical patent/JPS62227089A/ja
Publication of JPH0558072B2 publication Critical patent/JPH0558072B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP6964686A 1986-03-27 1986-03-27 表面処理方法および装置 Granted JPS62227089A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6964686A JPS62227089A (ja) 1986-03-27 1986-03-27 表面処理方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6964686A JPS62227089A (ja) 1986-03-27 1986-03-27 表面処理方法および装置

Publications (2)

Publication Number Publication Date
JPS62227089A true JPS62227089A (ja) 1987-10-06
JPH0558072B2 JPH0558072B2 (cs) 1993-08-25

Family

ID=13408817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6964686A Granted JPS62227089A (ja) 1986-03-27 1986-03-27 表面処理方法および装置

Country Status (1)

Country Link
JP (1) JPS62227089A (cs)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166971A (ja) * 1986-12-27 1988-07-11 Anelva Corp 表面処理方法および装置
US4919783A (en) * 1986-12-05 1990-04-24 Anelva Corporation Apparatus for processing an object by gas plasma with a reduced damage
JPH0488174A (ja) * 1990-08-01 1992-03-23 Anelva Corp 表面処理方法および装置
JPH11279757A (ja) * 1998-03-27 1999-10-12 Shincron:Kk 複合金属の化合物薄膜形成方法及びその薄膜形成装置
JPH11279758A (ja) * 1998-03-30 1999-10-12 Shincron:Kk 金属化合物薄膜の形成方法および成膜装置
JP2001011605A (ja) * 1999-06-30 2001-01-16 Shincron:Kk 複合金属の化合物薄膜形成方法及びその薄膜形成装置
JP2003080059A (ja) * 2001-09-10 2003-03-18 Yaskawa Electric Corp 反応性ガスを用いた物質処理方法およびその装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232057A (en) * 1979-03-01 1980-11-04 International Business Machines Corporation Semiconductor plasma oxidation
JPS55141729A (en) * 1979-04-21 1980-11-05 Nippon Telegr & Teleph Corp <Ntt> Ion-shower device
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
JPS58193726A (ja) * 1982-05-08 1983-11-11 Ushio Inc 蒸着方法
JPS59145530A (ja) * 1983-12-23 1984-08-21 Hitachi Ltd プラズマ処理装置
JPS60202928A (ja) * 1984-03-28 1985-10-14 Toshiba Corp 光励起反応装置
JPS6191377A (ja) * 1984-10-12 1986-05-09 Anelva Corp 表面処理装置
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232057A (en) * 1979-03-01 1980-11-04 International Business Machines Corporation Semiconductor plasma oxidation
JPS55141729A (en) * 1979-04-21 1980-11-05 Nippon Telegr & Teleph Corp <Ntt> Ion-shower device
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
JPS58193726A (ja) * 1982-05-08 1983-11-11 Ushio Inc 蒸着方法
JPS59145530A (ja) * 1983-12-23 1984-08-21 Hitachi Ltd プラズマ処理装置
JPS60202928A (ja) * 1984-03-28 1985-10-14 Toshiba Corp 光励起反応装置
JPS6191377A (ja) * 1984-10-12 1986-05-09 Anelva Corp 表面処理装置
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4919783A (en) * 1986-12-05 1990-04-24 Anelva Corporation Apparatus for processing an object by gas plasma with a reduced damage
JPS63166971A (ja) * 1986-12-27 1988-07-11 Anelva Corp 表面処理方法および装置
JPH0488174A (ja) * 1990-08-01 1992-03-23 Anelva Corp 表面処理方法および装置
JPH11279757A (ja) * 1998-03-27 1999-10-12 Shincron:Kk 複合金属の化合物薄膜形成方法及びその薄膜形成装置
JPH11279758A (ja) * 1998-03-30 1999-10-12 Shincron:Kk 金属化合物薄膜の形成方法および成膜装置
JP2001011605A (ja) * 1999-06-30 2001-01-16 Shincron:Kk 複合金属の化合物薄膜形成方法及びその薄膜形成装置
JP2003080059A (ja) * 2001-09-10 2003-03-18 Yaskawa Electric Corp 反応性ガスを用いた物質処理方法およびその装置

Also Published As

Publication number Publication date
JPH0558072B2 (cs) 1993-08-25

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