JPS6220998Y2 - - Google Patents
Info
- Publication number
- JPS6220998Y2 JPS6220998Y2 JP1980094379U JP9437980U JPS6220998Y2 JP S6220998 Y2 JPS6220998 Y2 JP S6220998Y2 JP 1980094379 U JP1980094379 U JP 1980094379U JP 9437980 U JP9437980 U JP 9437980U JP S6220998 Y2 JPS6220998 Y2 JP S6220998Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- support
- liquid phase
- epitaxial growth
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980094379U JPS6220998Y2 (enExample) | 1980-07-04 | 1980-07-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980094379U JPS6220998Y2 (enExample) | 1980-07-04 | 1980-07-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5720144U JPS5720144U (enExample) | 1982-02-02 |
| JPS6220998Y2 true JPS6220998Y2 (enExample) | 1987-05-28 |
Family
ID=29456307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1980094379U Expired JPS6220998Y2 (enExample) | 1980-07-04 | 1980-07-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6220998Y2 (enExample) |
-
1980
- 1980-07-04 JP JP1980094379U patent/JPS6220998Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5720144U (enExample) | 1982-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE25711T1 (de) | Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial. | |
| FR2358921A1 (fr) | Dispositif a monocristal et procede pour sa fabrication | |
| KR930006823A (ko) | 반도체장치의 제조방법 | |
| JPS6235260B2 (enExample) | ||
| JPS55163835A (en) | Selective liquid phase growth of on semiconductor region | |
| US3650822A (en) | Method of producing epitactic semiconductor layers on foreign substrates | |
| JPS6023496B2 (ja) | エピタキシヤル成長法およびボ−ト | |
| JPH0438517Y2 (enExample) | ||
| JPS5937855B2 (ja) | 液相エピタキシヤル成長装置 | |
| JPH0543109Y2 (enExample) | ||
| JPH1064973A (ja) | 半導体製造装置 | |
| JP2548722B2 (ja) | 液相結晶成長装置 | |
| JPH01219094A (ja) | 液相エピタキシャル成長ボート | |
| JP3515858B2 (ja) | 液相エピタキシャル成長用ボート | |
| JPS598698A (ja) | 縦型液相エピタキシヤル成長装置 | |
| JPS61261293A (ja) | 液相エピタキシヤル成長用ボ−ト | |
| JPS6117490A (ja) | 半導体液相エピタキシヤル成長装置および方法 | |
| JPS5918644A (ja) | 液相エピタキシヤル成長装置 | |
| JPH029444B2 (enExample) | ||
| JPS589794B2 (ja) | 半導体の液相多層薄膜成長法および成長装置 | |
| JPS5821830A (ja) | 液相エピタキシヤル成長装置 | |
| JPS6021956B2 (ja) | 半導体層の液相成長方法 | |
| JPS63124424A (ja) | 試料の加熱方法 | |
| JPS5818920A (ja) | 液相成長用ボ−トの清浄方法 | |
| JPS5317065A (en) | Liquid phase growth method for semiconductor substrate |