JPS6220998Y2 - - Google Patents
Info
- Publication number
- JPS6220998Y2 JPS6220998Y2 JP9437980U JP9437980U JPS6220998Y2 JP S6220998 Y2 JPS6220998 Y2 JP S6220998Y2 JP 9437980 U JP9437980 U JP 9437980U JP 9437980 U JP9437980 U JP 9437980U JP S6220998 Y2 JPS6220998 Y2 JP S6220998Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- support
- liquid phase
- epitaxial growth
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 239000007791 liquid phase Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9437980U JPS6220998Y2 (de) | 1980-07-04 | 1980-07-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9437980U JPS6220998Y2 (de) | 1980-07-04 | 1980-07-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5720144U JPS5720144U (de) | 1982-02-02 |
| JPS6220998Y2 true JPS6220998Y2 (de) | 1987-05-28 |
Family
ID=29456307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9437980U Expired JPS6220998Y2 (de) | 1980-07-04 | 1980-07-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6220998Y2 (de) |
-
1980
- 1980-07-04 JP JP9437980U patent/JPS6220998Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5720144U (de) | 1982-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR920000113A (ko) | 수소화 알킬알루미늄을 사용함에 의한 주성분으로 알루미늄을 함유하는 금속 퇴적막의 형성방법 | |
| FR2358921A1 (fr) | Dispositif a monocristal et procede pour sa fabrication | |
| KR940016544A (ko) | 반도체기판의 작성방법 및 고체촬상장치의 제조방법 | |
| JPS6220998Y2 (de) | ||
| KR930006823A (ko) | 반도체장치의 제조방법 | |
| US4468258A (en) | Method of controlling the partial pressure of at least one substance mixture or mixture of substances | |
| JPS6235260B2 (de) | ||
| US3993511A (en) | High temperature electrical contact for Peltier-induced liquid phase epitaxy on intermetallic III-V compounds of gallium | |
| JPS6023496B2 (ja) | エピタキシヤル成長法およびボ−ト | |
| JPH0445238Y2 (de) | ||
| JPH0438517Y2 (de) | ||
| JPS5937855B2 (ja) | 液相エピタキシヤル成長装置 | |
| JPH0543109Y2 (de) | ||
| JPH01219094A (ja) | 液相エピタキシャル成長ボート | |
| GB1451379A (en) | Apparatus for producing a semiconductor device utilizing successive liquid growth | |
| JPS598698A (ja) | 縦型液相エピタキシヤル成長装置 | |
| JP3515858B2 (ja) | 液相エピタキシャル成長用ボート | |
| JPH023620Y2 (de) | ||
| JPS5918644A (ja) | 液相エピタキシヤル成長装置 | |
| JPH029444B2 (de) | ||
| JPS5821830A (ja) | 液相エピタキシヤル成長装置 | |
| JPS5920639B2 (ja) | 液相エピタキシヤル成長方法 | |
| JPS6230694A (ja) | 液相エピタキシヤル成長方法 | |
| JPS52137977A (en) | Liquid phase growth apparatus for compound semiconductors | |
| JPS6410091B2 (de) |