JPS6220636B2 - - Google Patents

Info

Publication number
JPS6220636B2
JPS6220636B2 JP55015023A JP1502380A JPS6220636B2 JP S6220636 B2 JPS6220636 B2 JP S6220636B2 JP 55015023 A JP55015023 A JP 55015023A JP 1502380 A JP1502380 A JP 1502380A JP S6220636 B2 JPS6220636 B2 JP S6220636B2
Authority
JP
Japan
Prior art keywords
bit line
memory cell
memory
cell
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55015023A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56114193A (en
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1502380A priority Critical patent/JPS56114193A/ja
Publication of JPS56114193A publication Critical patent/JPS56114193A/ja
Publication of JPS6220636B2 publication Critical patent/JPS6220636B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP1502380A 1980-02-09 1980-02-09 Semiconductor memory device Granted JPS56114193A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1502380A JPS56114193A (en) 1980-02-09 1980-02-09 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1502380A JPS56114193A (en) 1980-02-09 1980-02-09 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS56114193A JPS56114193A (en) 1981-09-08
JPS6220636B2 true JPS6220636B2 (enrdf_load_stackoverflow) 1987-05-08

Family

ID=11877240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1502380A Granted JPS56114193A (en) 1980-02-09 1980-02-09 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56114193A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656720B2 (ja) * 1985-03-29 1994-07-27 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
FR2652672B1 (fr) * 1989-10-02 1991-12-20 Sgs Thomson Microelectronics Memoire a temps de lecture ameliore.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750000B2 (enrdf_load_stackoverflow) * 1973-04-11 1982-10-25
JPS5399736A (en) * 1977-02-10 1978-08-31 Toshiba Corp Semiconductor memory unit
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit

Also Published As

Publication number Publication date
JPS56114193A (en) 1981-09-08

Similar Documents

Publication Publication Date Title
US6560142B1 (en) Capacitorless DRAM gain cell
US4399519A (en) Dynamic monolithic memory
JP2723278B2 (ja) ハイキャパシタンス線プログラミング用デコーダ・ドライバ回路
JP2002245775A (ja) 半導体装置
JPS5833638B2 (ja) メモリ装置
JPH08106791A (ja) 半導体記憶装置の駆動方法
CN113963738B (zh) 反熔丝装置及反熔丝单元的编程方法
EP0361546B1 (en) Semiconductor memory device
JPS61218223A (ja) 制限された検出電流を用いるプログラム可能な論理装置
JPS6240697A (ja) 半導体記憶装置
JPH0152906B2 (enrdf_load_stackoverflow)
US5835403A (en) Multiplication of storage capacitance in memory cells by using the Miller effect
EP0037262A2 (en) Semiconductor memory device
KR100300830B1 (ko) 반도체메모리의서브디코더에사용되는nor게이트
JPS6322626B2 (enrdf_load_stackoverflow)
JPS6220636B2 (enrdf_load_stackoverflow)
JPS586234B2 (ja) 半導体記憶装置
JPS6027118B2 (ja) 半導体メモリ装置
US20060133133A1 (en) Semiconductor device
US4853897A (en) Complementary semiconductor memory device
IE52954B1 (en) Control of a signal voltage for a semiconductor device
JPS61151899A (ja) 半導体記憶装置
JPH0656719B2 (ja) 半導体記憶装置
JPH06309872A (ja) 半導体記憶装置
JPH0137854B2 (enrdf_load_stackoverflow)