JPS6220634B2 - - Google Patents
Info
- Publication number
- JPS6220634B2 JPS6220634B2 JP56137923A JP13792381A JPS6220634B2 JP S6220634 B2 JPS6220634 B2 JP S6220634B2 JP 56137923 A JP56137923 A JP 56137923A JP 13792381 A JP13792381 A JP 13792381A JP S6220634 B2 JPS6220634 B2 JP S6220634B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- flop
- flip
- mos transistor
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137923A JPS5841487A (ja) | 1981-08-31 | 1981-08-31 | 半導体メモリ装置 |
| US06/412,378 US4536859A (en) | 1981-08-31 | 1982-08-27 | Cross-coupled inverters static random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137923A JPS5841487A (ja) | 1981-08-31 | 1981-08-31 | 半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5841487A JPS5841487A (ja) | 1983-03-10 |
| JPS6220634B2 true JPS6220634B2 (enrdf_load_stackoverflow) | 1987-05-08 |
Family
ID=15209841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56137923A Granted JPS5841487A (ja) | 1981-08-31 | 1981-08-31 | 半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5841487A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4750155A (en) * | 1985-09-19 | 1988-06-07 | Xilinx, Incorporated | 5-Transistor memory cell which can be reliably read and written |
-
1981
- 1981-08-31 JP JP56137923A patent/JPS5841487A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5841487A (ja) | 1983-03-10 |
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