JPS622040B2 - - Google Patents

Info

Publication number
JPS622040B2
JPS622040B2 JP9819184A JP9819184A JPS622040B2 JP S622040 B2 JPS622040 B2 JP S622040B2 JP 9819184 A JP9819184 A JP 9819184A JP 9819184 A JP9819184 A JP 9819184A JP S622040 B2 JPS622040 B2 JP S622040B2
Authority
JP
Japan
Prior art keywords
etching
aluminum foil
sulfuric acid
liquid temperature
aqueous solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9819184A
Other languages
Japanese (ja)
Other versions
JPS60243300A (en
Inventor
Ryosuke Izumi
Yoshiro Ogata
Shunichi Oosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marcon Electronics Co Ltd
Original Assignee
Marcon Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marcon Electronics Co Ltd filed Critical Marcon Electronics Co Ltd
Priority to JP9819184A priority Critical patent/JPS60243300A/en
Publication of JPS60243300A publication Critical patent/JPS60243300A/en
Publication of JPS622040B2 publication Critical patent/JPS622040B2/ja
Granted legal-status Critical Current

Links

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  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は電解コンデンサに用いるアルミ箔のエ
ツチング方法に関し、直流エツチングを行つたの
ちに化学エツチングを行うことを特徴としたもの
である。 従来、電解コンデンサ用電極箔として用いるア
ルミ箔のエツチング方法として、塩酸の数%水溶
液をエツチング液とし、該エツチング液を80℃な
どの高温に保ち、直流電解エツチングを行つてい
たが、饋電する電気量が4500C/dm2を越えるとエ
ツチングピツトの生成よりも表面溶解が大とな
り、また機械的強度も損われるなどの問題点があ
り、第1図に示すように得られたピツト1も密度
が粗でアルミ箔を貫通したものが多く、エツチン
グによる表面拡大率の向上を図れない欠点があつ
た。 本発明は上記の点に鑑みてなされたもので、エ
ツチングピツトの密度が密で、かつピツトの生成
によつてもアルミ箔の地金が残ることによつて機
械的強度を維持できる電解コンデンサ用アルミ箔
のエツチング方法を提供するものである。以下実
施例により説明する。 本発明は塩酸+硫酸水溶液(液温50〜100℃)
を使用し直流を饋電して前段エツチングを行つた
のち、硫酸水溶液(液温50〜100℃)中に浸漬し
化学的にエツチングする後段エツチングからなる
もので、表面拡大率が大で、機械的強度に優れた
エツチング箔を提供するものである。発明者は第
1表に示すような組合せからなるエツチングおよ
び得られたエツチング済アルミ箔を210Vで化成
処理したときの静電容量値と折曲回数(500gの
錘をさげて片側に直角に倒し、戻して反対側に同
様の動作を行つたときを1回としたときの回数)
を得た。
The present invention relates to a method for etching aluminum foil used in electrolytic capacitors, and is characterized in that chemical etching is performed after direct current etching. Conventionally, the method of etching aluminum foil used as electrode foil for electrolytic capacitors was to use a few percent aqueous solution of hydrochloric acid as an etching solution, keep the etching solution at a high temperature such as 80°C, and perform DC electrolytic etching. If the amount of electricity exceeds 4500C/ dm2 , there will be problems such as surface dissolution will be greater than formation of etching pits, and mechanical strength will also be impaired. Many of them were rough and penetrated through the aluminum foil, and had the disadvantage that it was not possible to improve the surface enlargement rate by etching. The present invention has been made in view of the above points, and is an aluminum foil for electrolytic capacitors that has dense etching pits and can maintain mechanical strength because the base metal of the aluminum foil remains even when pits are formed. A method of etching foil is provided. This will be explained below using examples. The present invention is a hydrochloric acid + sulfuric acid aqueous solution (liquid temperature 50 to 100℃)
The first stage of etching is performed by feeding direct current using a sulfuric acid solution, and the second stage of etching is chemically etched by immersion in a sulfuric acid aqueous solution (solution temperature: 50 to 100°C). The present invention provides an etching foil with excellent mechanical strength. The inventor etched the combinations shown in Table 1 and calculated the capacitance value and number of bends when the etched aluminum foil was subjected to chemical conversion treatment at 210V (lower a 500g weight and tilt it at right angles to one side). , the number of times when one time is when you return and perform the same action on the opposite side)
I got it.

【表】 上表の本発明1〜5によつて得たエツチング済
アルミ箔10の断面図を第2図に示すが、第1図
に示した従来例と比較しエツチングピツト11が
密でありピツトの深さも貫通することがなくアル
ミ地金を残してあり、折曲げなど機械的強度が大
であることが理解される。また前段エツチング液
の組成はHcl 2〜15wt/V%+H2SO41〜35wt/
V%の範囲が適当である。Hclはアルミ箔に対し
エツチングピツトの密度が粗く、かつ深く作用す
るものであり、H2SO4はエツチングピツトの密度
は密になるが浅く作用するものであるから、本発
明はこれらを適当な組成範囲に定めることによつ
てそれぞれの作用を制御するようにしたものであ
る。そして後段の化学エツチングでは前段エツチ
ングで生成したエツチングピツトに対し、できる
だけアルミ箔表面の溶解を避けピツトを深さ方向
に進行させる作用を有するものであるから、適宜
な種類の液とその濃度範囲が要求されるが、本発
明では前段エツチングとの関連も含めて検討し、
H2SO4を使用しその濃度を5〜50wt/V%とし
た。なお前段エツチングにおける電流密度、エツ
チング液温度、後段エツチングにおける液温度、
浸漬時間などはエツチング状態によつて適宜可変
し得るものではあるが、適当な範囲としては下記
第2表の範囲が望ましく表面拡大率、機械的強度
の優れたものを得ることができる。
[Table] FIG. 2 shows a cross-sectional view of the etched aluminum foil 10 obtained according to the present inventions 1 to 5 shown in the above table. Compared to the conventional example shown in FIG. It is understood that the aluminum base metal remains without penetrating the depth, and that it has great mechanical strength such as bending. The composition of the first stage etching solution is Hcl 2~15wt/V%+ H2SO4 1 ~35wt/
A range of V% is suitable. HCl has a rough etching pit density and acts deeply on aluminum foil, and H 2 SO 4 has a dense etching pit density but acts shallowly. Therefore, the present invention uses these in an appropriate composition range. By setting the following, each action is controlled. In the second stage of chemical etching, the etching pits formed in the first stage of etching have the effect of advancing the pits in the depth direction while avoiding dissolution of the aluminum foil surface as much as possible, so an appropriate type of liquid and its concentration range are required. However, in the present invention, we will consider the relationship with the pre-etching,
H2SO4 was used at a concentration of 5 to 50 wt/V%. In addition, the current density in the first stage etching, the etching liquid temperature, the liquid temperature in the second stage etching,
Although the immersion time and the like can be changed as appropriate depending on the etching condition, the range shown in Table 2 below is preferable as a suitable range, and it is possible to obtain an excellent surface enlargement ratio and mechanical strength.

【表】 第1表における静電容量および折曲強度から明
らかなように、本発明になるエツチング方法によ
れば、従来例・参考例に比して静電容量の増加も
あるが、折曲強度が著しく向上している特長を有
する。また静電容量はエツチング条件によつては
あまり増加しない部分もあるが、従来例に比し8
〜34%増となつてアルミ箔強度を向上させるとと
もに静電容量の増加を図れる効果を得ることがで
きる。
[Table] As is clear from the capacitance and bending strength in Table 1, according to the etching method of the present invention, there is an increase in capacitance compared to the conventional and reference examples; It has the feature of significantly improved strength. In addition, the capacitance does not increase much depending on the etching conditions, but compared to the conventional example, the capacitance increases by 8.
The aluminum foil strength is increased by ~34%, and it is possible to obtain the effect of improving the aluminum foil strength and increasing the capacitance.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のエツチング方法によつて得られ
たアルミ箔の断面図、第2図は本発明になるエツ
チング方法によつて得られたアルミ箔の断面図で
ある。 10……エツチング済アルミ箔、11……エツ
チングピツト。
FIG. 1 is a cross-sectional view of an aluminum foil obtained by a conventional etching method, and FIG. 2 is a cross-sectional view of an aluminum foil obtained by an etching method according to the present invention. 10...Etched aluminum foil, 11...Etching pit.

Claims (1)

【特許請求の範囲】 1 アルミ箔を塩酸2〜15wt/V%+硫酸1〜
35wt/V%水溶液からなる前段エツチング液中
で直流エツチングしたのち、硫酸5〜50wt/V
%水溶液からなる後段エツチング液中に浸漬処理
を行うことを特徴とする電解コンデンサ用アルミ
箔のエツチング方法。 2 直流エツチングをエツチング液温50〜100
℃、電流密度1〜70A/dm2の条件で行つたのち、
浸漬処理を液温50〜100℃、浸漬時間4〜20min
の条件で行うことを特徴とする特許請求の範囲第
1項に記載の電解コンデンサ用用アルミ箔のエツ
チング方法。
[Claims] 1. Aluminum foil in hydrochloric acid 2~15wt/V% + sulfuric acid 1~
After direct current etching in a pre-etching solution consisting of a 35wt/V% aqueous solution, 5 to 50wt/V of sulfuric acid was applied.
1. A method for etching aluminum foil for electrolytic capacitors, characterized by immersion treatment in a subsequent etching solution consisting of a % aqueous solution. 2 Etching liquid temperature of DC etching 50~100
℃ and current density of 1 to 70 A/ dm2 ,
Immersion treatment at a liquid temperature of 50 to 100℃ and an immersion time of 4 to 20 minutes.
A method of etching aluminum foil for an electrolytic capacitor according to claim 1, wherein the etching method is carried out under the following conditions.
JP9819184A 1984-05-15 1984-05-15 Etching method of aluminum foil for electrolytic capacitor Granted JPS60243300A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9819184A JPS60243300A (en) 1984-05-15 1984-05-15 Etching method of aluminum foil for electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9819184A JPS60243300A (en) 1984-05-15 1984-05-15 Etching method of aluminum foil for electrolytic capacitor

Publications (2)

Publication Number Publication Date
JPS60243300A JPS60243300A (en) 1985-12-03
JPS622040B2 true JPS622040B2 (en) 1987-01-17

Family

ID=14213114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9819184A Granted JPS60243300A (en) 1984-05-15 1984-05-15 Etching method of aluminum foil for electrolytic capacitor

Country Status (1)

Country Link
JP (1) JPS60243300A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095772A (en) * 2005-09-27 2007-04-12 Hitachi Aic Inc Electric double-layer capacitor

Also Published As

Publication number Publication date
JPS60243300A (en) 1985-12-03

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