JPS62202754A - Thin film type thermal head - Google Patents
Thin film type thermal headInfo
- Publication number
- JPS62202754A JPS62202754A JP61044252A JP4425286A JPS62202754A JP S62202754 A JPS62202754 A JP S62202754A JP 61044252 A JP61044252 A JP 61044252A JP 4425286 A JP4425286 A JP 4425286A JP S62202754 A JPS62202754 A JP S62202754A
- Authority
- JP
- Japan
- Prior art keywords
- thermal head
- resistance
- thin film
- heat
- heating resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000002844 melting Methods 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052735 hafnium Inorganic materials 0.000 claims abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 2
- 230000008018 melting Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000002075 main ingredient Substances 0.000 abstract 1
- 229960003753 nitric oxide Drugs 0.000 abstract 1
- 235000019391 nitrogen oxide Nutrition 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910004479 Ta2N Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 Ta5i02 Chemical class 0.000 description 1
- 229910007735 Zr—Si Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明は薄膜型サーマルヘッドに関し、特に改良された
薄膜発熱抵抗体を有する薄膜型サーマルヘッドに関する
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a thin film thermal head, and more particularly to a thin film thermal head having an improved thin film heating resistor.
［従来技術とその問題点］
薄膜発熱抵抗体を用いる薄膜型サーマルヘッドはコンピ
ュータ、ワードプロセッサ、ファクシミリ等における印
字ヘッドとして広く用いられている。サーマルヘッドは
抵抗発熱体のドツトを多数配列し、それらを選択的に通
電することにより所望のパターンないし文字の形に発熱
させ、印字リボンの色材を用紙面へ熱転写させるように
なっている。抵抗発熱体には種々のものが知られ、或い
は使用されているが、良く用いられる材料としてはＮｉ
−Ｃｒ １丁８２Ｎ 、丁ａ−３ｉ０２、Ｃｒ−３ｉ等
がある。[Prior Art and its Problems] Thin-film thermal heads using thin-film heating resistors are widely used as print heads in computers, word processors, facsimile machines, and the like. The thermal head has a large number of resistive heating element dots arranged, and selectively energizes them to generate heat in a desired pattern or character shape, thereby thermally transferring the color material of the printing ribbon to the paper surface. Various resistance heating elements are known or used, but the most commonly used material is Ni.
-Cr 1-82N, Cr-3i02, Cr-3i, etc.
これらはサーマルヘッド用抵抗発熱体として１ぐれた特
性を有するが、種々の欠点も有する。合金等の金属系の
発熱抵抗体は耐熱性及び耐酸化性に劣り、印字に必要な
エネルギーを繰返し印加した場合、発熱によって発熱抵
抗体に酸化現象が発生し、抵抗値の増大を招き、印字特
性の低下を招く。Although these have excellent properties as resistance heating elements for thermal heads, they also have various drawbacks. Metal-based heating resistors such as alloys have poor heat resistance and oxidation resistance, and when the energy necessary for printing is repeatedly applied, the heat generation causes oxidation of the heating resistor, leading to an increase in resistance value and causing printing problems. This leads to deterioration of characteristics.
また、これらの金属系の発熱抵抗体は繰返し通電による
熱パルスにより急激な熱サイクル下に置かれたとき大き
く熱膨張・収縮し、下地基板と表面耐摩耗性保護膜との
間に大きい応力を生じてクラックの原因となる。一方、
Ｔａ５ｉ０２等の酸化物や窒化物等の場合には、熱伝導
率が小さいため発熱体内での均熱性に欠け、印字品質を
低下させた。In addition, these metal heating resistors undergo large thermal expansion and contraction when placed under rapid thermal cycles due to heat pulses caused by repeated energization, creating large stress between the underlying substrate and the surface wear-resistant protective film. This causes cracks. on the other hand,
In the case of oxides and nitrides such as Ta5i02, their thermal conductivity is low, so they lack heat uniformity within the heating element, resulting in a decrease in printing quality.
また、金属系の発熱抵抗体は固有抵抗率が小さく、また
上記の化合物系の発熱抵抗体でも固有抵抗が小さく（Ｔ
ａ２Ｎで２００〜３００μΩｃｍ１Ｔａ−３ｉ０２でも
約２０００μΩｃｍ）、サーマルヘッドに必要な面積抵
抗１（７口前後を得ようとすると、数十への薄膜の発熱
抵抗体を実現しなければなら＼ず、安定して製造するこ
とが困難である。典型的な製法はスパッタリング、イオ
ンブレーティング、ＣＶＤ法などの周知の半導体プロセ
ス技術であるが、膜厚が１０００人程度４いと工程制御
が困難である。また、これらの発熱体材料の抵抗温度係
数は成分比に対して比較的不感であり、所望値に制御す
ることが困難である。さらに、金属系では発熱体と電力
供給電極との間に反応が生じ、発熱抵抗体の抵抗値変動
や断線等の不良の発生の原因となる。In addition, metal-based heating resistors have a small specific resistivity, and even the above-mentioned compound-based heating resistors have a small specific resistance (T
200 to 300μΩcm for a2N, about 2000μΩcm for Ta-3i02), and to obtain the area resistance of 1 (around 7 holes) required for a thermal head, it is necessary to realize several tens of thin film heating resistors, and it is not stable. Typical manufacturing methods are well-known semiconductor process techniques such as sputtering, ion blating, and CVD, but process control is difficult when the film thickness is about 1,000 layers. The temperature coefficient of resistance of these heating element materials is relatively insensitive to component ratios and is difficult to control to a desired value.Furthermore, in metallic systems, reactions occur between the heating element and the power supply electrodes. This may cause defects such as fluctuations in the resistance value of the heating resistor and disconnection.
［発明の目的］
従って、本発明の目的は、耐熱性が高く、寿命が長く、
固有抵抗率が大きく、しかも温度係数が調整可能な薄膜
発熱抵抗体を用いた薄膜型サーマルヘッドを提供するこ
とにある。[Objective of the Invention] Therefore, the object of the present invention is to provide a material with high heat resistance, long life, and
It is an object of the present invention to provide a thin film type thermal head using a thin film heating resistor having a large specific resistivity and an adjustable temperature coefficient.
［発明の概要］
本発明は、薄膜発熱抵抗体として、高融点金属と、硅素
と、酸素と、窒素とを主成分として含有させたことを特
徴とする。すなわち、）ｆ−３ｉ−０−Ｎ系発熱抵抗体
である。ここにＨは高融点金属でＴｉ、Ｎｏ、 ｗ 、
Ｈｆ、 Ｎｉ１Ｖ １Ｚｒ１Ｌａ、 Ｔａ、 Ｆｅ、
Ｃｏより選ばれた少なくとも１種である。[Summary of the Invention] The present invention is characterized in that a thin film heating resistor contains a high melting point metal, silicon, oxygen, and nitrogen as main components. That is, it is a f-3i-0-N type heating resistor. Here, H is a high melting point metal such as Ti, No, w,
Hf, Ni1V 1Zr1La, Ta, Fe,
At least one selected from Co.
高融点金属の存在により発熱体の抵抗率は繰返し熱パル
スによっても長期に変化せず、安定したサーマルヘッド
が得られる。また金属系の場合とちがい、酸−窒化物で
あるため熱膨張・収縮が小ざく、上下層との熱膨張係数
の差による大きい内部応力の発生、ひいてはクラックの
発生がない。Due to the presence of the high melting point metal, the resistivity of the heating element does not change over a long period of time even with repeated heat pulses, resulting in a stable thermal head. Also, unlike metal-based materials, since it is an oxy-nitride, thermal expansion and contraction are small, and large internal stress due to the difference in thermal expansion coefficient between the upper and lower layers does not occur, and cracks do not occur.
金属が酸化物、窒化物の量比を越えれば熱伝導性が良く
なり均熱性が向上する。また、十分な酸素、窒素の存在
により経時酸化のおそれもなく特性が安定する。さらに
、高融点金属の含有率に対して固有抵抗率が大きく変化
するので、その含有量を制御することでサーマルヘッド
の特性の制御範囲が大きくなり、例えば１０４μΩｃｍ
抵抗温度係数士１１００ｐｐ／ ’Ｃのような発熱体抵
抗の設計も容易になし得る。このような高抵抗率では、
発熱体の薄膜はｉ ｏｏｏ入前後前後適となり、成膜が
容易となる。If the ratio of metal to oxide exceeds that of nitride, thermal conductivity will be improved and thermal uniformity will be improved. In addition, the presence of sufficient oxygen and nitrogen stabilizes the properties without fear of oxidation over time. Furthermore, since the specific resistivity changes greatly depending on the content of high-melting point metal, controlling the content increases the control range of the thermal head characteristics, for example, 104 μΩcm.
It is also possible to easily design a heating element resistance with a temperature coefficient of resistance of 1100 pp/'C. At such high resistivity,
The thin film of the heating element is suitable before and after entering the i ooo, making it easy to form the film.
［発明の詳細な説明］
本発明の薄膜型サーマルヘッドの構成の概要は第１図に
示されている。図中１はグレーズドセラミック基板であ
り、その表面にグレーズ層２が形成される。グレーズ層
２は磁器のうわぐずりに相当する酸化物であり、硅素及
びアルミニウムの酸化物を含む。グレーズ層２の上には
例えば公知のスパッタ法により本発明の薄膜抵抗発熱体
３が成膜され、さらに電力供給用電極（Ｎｉ、 Ｃｒ、
Ａｌ等、特に酊）４が蒸着またはスパッタなどで成
膜され、最後に公知の耐摩耗性保護膜（例えば５ｉ−０
系、Ｔａ２Ｏ５、ＳｉＣ系等）６がスパッタ法等で成膜
される。[Detailed Description of the Invention] The outline of the structure of the thin film type thermal head of the present invention is shown in FIG. In the figure, 1 is a glazed ceramic substrate, on the surface of which a glazed layer 2 is formed. The glaze layer 2 is an oxide corresponding to a porcelain glaze, and contains oxides of silicon and aluminum. A thin film resistance heating element 3 of the present invention is formed on the glaze layer 2 by, for example, a known sputtering method, and a power supply electrode (Ni, Cr,
A film such as Al (especially 5i-0) is formed by vapor deposition or sputtering, and finally a known wear-resistant protective film (for example, 5i-0
type, Ta2O5, SiC type, etc.) 6 is formed into a film by sputtering method or the like.
発熱抵抗体３は本発明に従って、硅素と高融点金属Ｍ
（Ｔｉ、 Ｎｏ、 Ｗ 、Ｉｆｆ、旧、Ｖ 、 Ｚｒ、
Ｌａ、 Ｔａ、Ｆｅ、 Ｃｏの少なくとも１種）とを含
む窒−酸化物である。この金属は種類によって作用上の
ちがいがあるが、しかし単独またはどの組合せを用いて
も発熱抵抗体の抵抗率と抵抗温度係数とはそれぞれ１０
７〜１０２μΩｃｍ及び−１５００〜＋５００ｐｌ）ｍ
／’Ｃの範囲で大きく変動する。従って特定の高融点
金属含有率を選択することにより、所望の抵抗率に於い
て所望の温度係数の発熱体を設計しろる。例えば抵抗率
１０４μΩｃｍのものを選択すれば膜厚は１０００Å以
上となしうる。一般に高融点金属は１０〜６０ｗｔ％の
範囲で選択しうる。この点については実施例により具体
的に示す。According to the present invention, the heating resistor 3 is made of silicon and a high melting point metal M.
(Ti, No, W, If, old, V, Zr,
It is a nitride-oxide containing at least one of La, Ta, Fe, and Co). The functions of these metals differ depending on the type, but regardless of whether they are used alone or in any combination, the resistivity and temperature coefficient of resistance of the heating resistor are each 10.
7~102μΩcm and -1500~+500pl)m
It fluctuates greatly within the range of /'C. Therefore, by selecting a specific refractory metal content, one can design a heating element with a desired temperature coefficient at a desired resistivity. For example, if one with a resistivity of 104 μΩcm is selected, the film thickness can be 1000 Å or more. Generally, the high melting point metal can be selected in the range of 10 to 60 wt%. This point will be specifically illustrated in Examples.
ｓｉ、ＯｌＮは耐熱性、耐酸化性の物質を形成しうるち
のであり、その比率を変えることにより耐熱性を保らな
がら抵抗率を変えることができる。Si and OlN form a heat-resistant and oxidation-resistant substance, and by changing the ratio, the resistivity can be changed while maintaining heat resistance.
例えばＳｉＯ，３００，４ＮＯ，３は抵抗率＞＞１０７
μΩｃｍ、温度係数 ＜ −１５００ｐｐｍ／ ’Ｃで
あるが、高融点金属Ｍの含有率が１０ｗｔ％以上で１０
７μΩｃｍ以下、−１１００Ｆ）ｌ）／ ’Ｃ以上を得
ることができる。For example, SiO, 300, 4NO, 3 has a resistivity of >>107
μΩcm, temperature coefficient <-1500ppm/'C, but when the content of high melting point metal M is 10wt% or more, 10
7μΩcm or less, -1100F)l)/'C or more can be obtained.
Ｈ、Ｓｉ、０、Ｎの少なくとも２種を含有する耐摩耗保
護層６を選択すれば、本発明の発熱抵抗体は耐摩耗保護
層に良くなじみ、また熱膨張係数の差が少なくなり好ま
しい。さらに、電極４．５としてＡｌを用いれば、同様
に電極と発熱抵抗体とのなじみが良くなり好ましい。It is preferable to select a wear-resistant protective layer 6 containing at least two of H, Si, 0, and N, since the heating resistor of the present invention will fit well into the wear-resistant protective layer and the difference in coefficient of thermal expansion will be reduced. Furthermore, it is preferable to use Al as the electrode 4.5, since the electrode and the heating resistor will fit better together.
本発明の発熱抵抗体は特にスパッタ法で製造することが
できる。例えば所望の組成比を有する固形物粉末を予め
製造し、それを圧縮成形してペレット化し、これをター
ゲットとしてＡｒをスパッタガスとして用い、その伯必
要に応じて０２、Ｎ２ガス等を共存させ、Ａｒイオンを
ターゲットに衝撃させ、放出されたイオンないし原子を
基板上に付着させる。膜組成はペレットの組成及びスパ
ッタ条件を変えることにより調整しうる。The heating resistor of the present invention can be manufactured particularly by a sputtering method. For example, a solid powder having a desired composition ratio is produced in advance, it is compression-molded into pellets, Ar is used as a sputtering gas using this as a target, and O2 gas, N2 gas, etc. are allowed to coexist as needed. A target is bombarded with Ar ions, and the released ions or atoms are deposited on a substrate. The film composition can be adjusted by changing the pellet composition and sputtering conditions.
Ｘ思±
組成Ｈ０ｘ ””０．２５００．４２ ＮＯ，３３のぺ
′ットをターゲラ１〜として１〜６ｍＴＯｒｒのＡ「を
スパッタガスとして用い、ターゲット−基板距離６０ｍ
ｍ、 ＲＦ電力１〜１０Ｗ／ｃｍ２、基板温度２００〜
４００℃の条件を調整して、上記組成の発熱抵抗体を製
作し、さらにＡｌ主電極保護膜を順に成膜してサーマル
ヘラ下を作成した。X composition H0x "" 0.2500.42 NO, 33 pet' is used as a target laser 1~, A' of 1~6 mTOrr is used as sputtering gas, target-substrate distance is 60 m.
m, RF power 1~10W/cm2, substrate temperature 200~
A heating resistor having the above composition was manufactured by adjusting the 400° C. condition, and an Al main electrode protective film was sequentially formed to create a thermal spatula bottom.
なお、保護膜にはＳｉの他にＮｏを少量含有させた。Note that the protective film contained a small amount of No in addition to Si.
得られたサーマルヘッドに対して、次ぎのテストを行っ
た。The following tests were conducted on the obtained thermal head.
ｘ＝０．１２のサンプルに対してパルス幅０．３ｍ秒、
周期２ｍ秒の熱パルスを加えたときの抵抗値変化率を第
２図に示した。またＮｏの含有率による抵抗率及び抵抗
温度係数を第３図に示した。なお対照サンプルとして従
来のＴａ２Ｎ発熱抵抗体八と、Ｚｒ−Ｓｉ発熱抵抗体Ｃ
に対する耐熱パルステストの結果を第２図に併記した。Pulse width 0.3 msec for sample x = 0.12,
Figure 2 shows the rate of change in resistance value when a heat pulse with a period of 2 msec was applied. Further, the resistivity and temperature coefficient of resistance depending on the No content are shown in FIG. As control samples, a conventional Ta2N heating resistor 8 and a Zr-Si heating resistor C were used.
The results of the heat resistance pulse test are also shown in Figure 2.
第２図のＢは本発明による発熱抵抗体を用いたサーマル
ヘッドを示す。B in FIG. 2 shows a thermal head using a heating resistor according to the present invention.
［作用効果］
第２図から分るように、本発明の）ｆｏ−３ｉ〜０−Ｎ
系発熱抵抗体日を用いたサーマルヘッドは熱パルスを多
数加えても抵抗値が変らず、耐熱性が良い。[Operation and Effect] As can be seen from FIG. 2, fo-3i to 0-N of the present invention
Thermal heads using heat-generating resistors have good heat resistance, with no change in resistance even when multiple heat pulses are applied.
従来の発熱抵抗体Ａ（Ｔａ２Ｎ）やＣ（Ｚｒ−３ｉ）で
は成る一定数の熱パルスを越えると抵抗の変化が大きく
なる。When a certain number of heat pulses are exceeded in conventional heating resistors A (Ta2N) and C (Zr-3i), the change in resistance becomes large.
第３図から分るように、本発明の発熱抵抗体は高融点金
属の含有指に応じてその抵抗率及び抵抗温度係数が大き
く変動する。従って高融点金属の含有率を調整すること
によってこれらの値を所望の値に設計することができる
。As can be seen from FIG. 3, the resistivity and temperature coefficient of resistance of the heating resistor of the present invention vary greatly depending on the content of the high melting point metal. Therefore, these values can be designed to desired values by adjusting the content of the high melting point metal.
耐熱性の向上には発熱体面内の温度分布の均一化、及び
熱膨張係数の減少によるものと思われる。The improvement in heat resistance is thought to be due to the uniformity of the temperature distribution within the plane of the heating element and the reduction in the coefficient of thermal expansion.
また、耐摩耗保護膜にＮｏ、 Ｓｉ、０、Ｈの少なくて
も３種を含有した材料を用いれば、相互間のなじみが良
くなって密着性が向上し、熱阿撃等に強くなり、クラン
ク・剥離等の発生が抑制される。また、本発明の発熱抵
抗体は、耐薬品性に優れ、アルカリや湿気の影響を受は
難い。In addition, if a material containing at least three of No, Si, 0, and H is used for the wear-resistant protective film, the mutual compatibility will be improved, the adhesion will be improved, and the material will be resistant to heat attack, etc. Occurrence of cranking, peeling, etc. is suppressed. Further, the heating resistor of the present invention has excellent chemical resistance and is hardly affected by alkali or moisture.
第１図はサーマルヘッドの構造を示す断面図、第２図は
本発明の発熱抵抗体を用いたサーマルヘッド及び従来例
の耐熱テストを示すグラフ、及び第３図は本発明のサー
マルヘッドにおいて発熱抵抗体中に含有される高融点金
属と抵抗率及び抵抗温度係数との関係を示すグラフであ
る。
・−７′
口隷背式子 Ｙ
ｑFIG. 1 is a cross-sectional view showing the structure of a thermal head, FIG. 2 is a graph showing a heat resistance test of a thermal head using the heating resistor of the present invention and a conventional example, and FIG. 3 is a graph showing heat generation in the thermal head of the present invention. It is a graph showing the relationship between a high melting point metal contained in a resistor, resistivity, and resistance temperature coefficient.・−7′ Mouth slave Shikiko Y q
Claims (1)
窒素と酸素とを主成分とする発熱抵抗体薄膜を設け、そ
の表面に耐摩耗性保護膜を形成し、さらに前記抵抗体に
電力供給用電極を接続した、薄膜型サーマルヘッド。 ２、高融点金属がＴｉ、Ｍｏ、Ｗ、Ｈｆ、Ｎｉ、Ｖ、Ｚ
ｒ、Ｌａ、Ｔａ、Ｆｅ、Ｃｏよりなる群から選ばれる前
記第１項記載のサーマルヘッド。 ３、耐摩耗性保護膜が硅素とＯとＮと高融点金属のうち
少なくとも２種の元素を含んでいる前記第１項記載のサ
ーマルヘッド。 ４、電力供給用電極がＡｌ単層である前記第１項ないし
第３項のいずれかに記載のサーマルヘッド。[Scope of Claims] 1. A heating resistor thin film containing a high melting point metal, silicon, nitrogen, and oxygen as main components is provided on a base substrate having a thermally insulating layer, and a wear-resistant protective film is formed on the surface thereof. , a thin film type thermal head further comprising a power supply electrode connected to the resistor. 2. High melting point metal is Ti, Mo, W, Hf, Ni, V, Z
2. The thermal head according to item 1, which is selected from the group consisting of r, La, Ta, Fe, and Co. 3. The thermal head according to item 1, wherein the wear-resistant protective film contains at least two elements selected from silicon, O, N, and a high-melting point metal. 4. The thermal head according to any one of items 1 to 3 above, wherein the power supply electrode is an Al single layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61044252A JPH0712690B2 (en) | 1986-03-03 | 1986-03-03 | Thin-film thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61044252A JPH0712690B2 (en) | 1986-03-03 | 1986-03-03 | Thin-film thermal head |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7121598A Division JP2870692B2 (en) | 1998-03-06 | 1998-03-06 | Thin-film thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62202754A true JPS62202754A (en) | 1987-09-07 |
| JPH0712690B2 JPH0712690B2 (en) | 1995-02-15 |
Family
ID=12686336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61044252A Expired - Fee Related JPH0712690B2 (en) | 1986-03-03 | 1986-03-03 | Thin-film thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712690B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5066963A (en) * | 1989-04-18 | 1991-11-19 | Canon Kabushiki Kaisha | Ink jet head having heat-generating resistor comprised of a complex compound |
| EP0729834A2 (en) * | 1995-03-03 | 1996-09-04 | Canon Kabushiki Kaisha | An ink-jet head, a substrate for an ink-jet head, and an ink-jet apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5311037A (en) * | 1976-07-19 | 1978-02-01 | Toshiba Corp | Thin film thermal head |
| JPS5325442A (en) * | 1976-08-20 | 1978-03-09 | Matsushita Electric Ind Co Ltd | Thermal print head |
| JPS5492276A (en) * | 1977-12-28 | 1979-07-21 | Canon Inc | Thermal head |
-
1986
- 1986-03-03 JP JP61044252A patent/JPH0712690B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5311037A (en) * | 1976-07-19 | 1978-02-01 | Toshiba Corp | Thin film thermal head |
| JPS5325442A (en) * | 1976-08-20 | 1978-03-09 | Matsushita Electric Ind Co Ltd | Thermal print head |
| JPS5492276A (en) * | 1977-12-28 | 1979-07-21 | Canon Inc | Thermal head |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5066963A (en) * | 1989-04-18 | 1991-11-19 | Canon Kabushiki Kaisha | Ink jet head having heat-generating resistor comprised of a complex compound |
| EP0729834A2 (en) * | 1995-03-03 | 1996-09-04 | Canon Kabushiki Kaisha | An ink-jet head, a substrate for an ink-jet head, and an ink-jet apparatus |
| EP0729834A3 (en) * | 1995-03-03 | 1997-05-21 | Canon Kk | An ink-jet head, a substrate for an ink-jet head, and an ink-jet apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0712690B2 (en) | 1995-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4168343A (en) | Thermal printing head | |
| JPH0312551B2 (en) | ||
| JPS62202754A (en) | Thin film type thermal head | |
| JPS62202753A (en) | Thin film type thermal head | |
| JP2870692B2 (en) | Thin-film thermal head | |
| JPS62201264A (en) | Membrane type thermal head | |
| JPS62202756A (en) | Thin film type thermal head | |
| JPH0712691B2 (en) | Thin-film thermal head | |
| JPS62201263A (en) | Membrane type thermal head | |
| JPS62201265A (en) | Membrane type thermal head | |
| JPS62201266A (en) | Membrane type thermal head | |
| JPS62201262A (en) | Membrane type thermal head | |
| JP2990719B2 (en) | Thermal head | |
| JP2843982B2 (en) | Thermal head | |
| JPS6367319B2 (en) | ||
| JPS63216762A (en) | Thermal head | |
| JP2000246929A (en) | Manufacture of thermal head | |
| JPS623968A (en) | Abrasion-resistant thin film thermal head | |
| JPS6145543B2 (en) | ||
| JPH0583378B2 (en) | ||
| JPH0673966B2 (en) | Thermal head | |
| JPS63135260A (en) | Thermal head | |
| JPH0250847A (en) | Thermal head and preparation thereof | |
| JPH0649375B2 (en) | Thermal head and method for producing the same | |
| JPH0523042B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |