JPS62202527A - 半導体基板の仕分方法 - Google Patents
半導体基板の仕分方法Info
- Publication number
- JPS62202527A JPS62202527A JP61044078A JP4407886A JPS62202527A JP S62202527 A JPS62202527 A JP S62202527A JP 61044078 A JP61044078 A JP 61044078A JP 4407886 A JP4407886 A JP 4407886A JP S62202527 A JPS62202527 A JP S62202527A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- silicon wafer
- less
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims description 71
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 238000010521 absorption reaction Methods 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 48
- 230000007547 defect Effects 0.000 description 22
- 230000000694 effects Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000005247 gettering Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000004793 poor memory Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61044078A JPS62202527A (ja) | 1986-03-03 | 1986-03-03 | 半導体基板の仕分方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61044078A JPS62202527A (ja) | 1986-03-03 | 1986-03-03 | 半導体基板の仕分方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62202527A true JPS62202527A (ja) | 1987-09-07 |
| JPH0528900B2 JPH0528900B2 (enrdf_load_stackoverflow) | 1993-04-27 |
Family
ID=12681586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61044078A Granted JPS62202527A (ja) | 1986-03-03 | 1986-03-03 | 半導体基板の仕分方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62202527A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100777198B1 (ko) * | 2006-02-15 | 2007-11-19 | 후지쯔 가부시끼가이샤 | 실리콘 웨이퍼의 처리 방법, 반도체 장치의 제조 방법 및웨이퍼 처리 장치 |
-
1986
- 1986-03-03 JP JP61044078A patent/JPS62202527A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100777198B1 (ko) * | 2006-02-15 | 2007-11-19 | 후지쯔 가부시끼가이샤 | 실리콘 웨이퍼의 처리 방법, 반도체 장치의 제조 방법 및웨이퍼 처리 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0528900B2 (enrdf_load_stackoverflow) | 1993-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |