JPS62197743A - 赤外吸収測定装置 - Google Patents

赤外吸収測定装置

Info

Publication number
JPS62197743A
JPS62197743A JP61038265A JP3826586A JPS62197743A JP S62197743 A JPS62197743 A JP S62197743A JP 61038265 A JP61038265 A JP 61038265A JP 3826586 A JP3826586 A JP 3826586A JP S62197743 A JPS62197743 A JP S62197743A
Authority
JP
Japan
Prior art keywords
absorption
infrared absorption
measuring device
ratio
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61038265A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0449904B2 (enExample
Inventor
Atsuko Kubota
敦子 窪田
Yoshiaki Owada
大和田　義明
Yoshiaki Matsushita
松下　嘉明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61038265A priority Critical patent/JPS62197743A/ja
Priority to US07/015,039 priority patent/US4862000A/en
Priority to EP19870102401 priority patent/EP0250707B1/en
Priority to DE8787102401T priority patent/DE3771945D1/de
Publication of JPS62197743A publication Critical patent/JPS62197743A/ja
Publication of JPH0449904B2 publication Critical patent/JPH0449904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N2021/3595—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using FTIR
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP61038265A 1986-02-25 1986-02-25 赤外吸収測定装置 Granted JPS62197743A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61038265A JPS62197743A (ja) 1986-02-25 1986-02-25 赤外吸収測定装置
US07/015,039 US4862000A (en) 1986-02-25 1987-02-17 Method for predicting density of micro crystal defects in semiconductor element from silicon wafer used in the manufacture of the element, and infrared absorption measurement apparatus for this method
EP19870102401 EP0250707B1 (en) 1986-02-25 1987-02-20 Method and apparatus for measuring by infrared absorption the concentration of microcrystal defects in a silicon wafer used in the manufacture of a semiconductor element
DE8787102401T DE3771945D1 (de) 1986-02-25 1987-02-20 Verfahren und vorrichtung zur infrarotabsorptionsmessung der konzentration von mikrokristallinen fehlern in einem silizium-wafer zur herstellung eines halbleiterelementes.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61038265A JPS62197743A (ja) 1986-02-25 1986-02-25 赤外吸収測定装置

Publications (2)

Publication Number Publication Date
JPS62197743A true JPS62197743A (ja) 1987-09-01
JPH0449904B2 JPH0449904B2 (enExample) 1992-08-12

Family

ID=12520489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61038265A Granted JPS62197743A (ja) 1986-02-25 1986-02-25 赤外吸収測定装置

Country Status (4)

Country Link
US (1) US4862000A (enExample)
EP (1) EP0250707B1 (enExample)
JP (1) JPS62197743A (enExample)
DE (1) DE3771945D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9983489B2 (en) 2014-06-03 2018-05-29 Asml Netherlands B.V. Method for compensating for an exposure error, a device manufacturing method, a substrate table, a lithographic apparatus, a control system, a method for measuring reflectivity and a method for measuring a dose of EUV radiation

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066599A (en) * 1989-07-27 1991-11-19 Fujitsu Limited Silicon crystal oxygen evaluation method using fourier transform infrared spectroscopy (ftir) and semiconductor device fabrication method using the same
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
US5702973A (en) * 1990-04-05 1997-12-30 Seh America, Inc. Method for forming epitaxial semiconductor wafer for CMOS integrated circuits
JPH07105424B2 (ja) * 1991-07-23 1995-11-13 信越半導体株式会社 シリコンウェーハの表面の結合状態及び不純物の評価方法
US5386118A (en) * 1992-05-11 1995-01-31 Shin-Etsu Handotai Co., Ltd. Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal
US5444246A (en) * 1992-09-30 1995-08-22 Shin-Etsu Handotai Co., Ltd. Determining carbon concentration in silicon single crystal by FT-IR
US5595916A (en) * 1993-03-29 1997-01-21 Fujitsu Limited Silicon oxide film evaluation method
WO1994025988A1 (en) * 1993-04-28 1994-11-10 Seh America, Inc. Epitaxial semiconductor wafer for cmos integrated circuits
US5550374A (en) * 1994-05-12 1996-08-27 Memc Electronic Materials, Inc. Methods and apparatus for determining interstitial oxygen content of relatively large diameter silicon crystals by infrared spectroscopy
JP2005513162A (ja) * 2001-10-02 2005-05-12 トラスティーズ オブ タフツ カレッジ 自己集合性ポリマ及びそれから作製される材料
DE102007029666B4 (de) 2007-06-27 2011-03-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Bearbeiten eines Substrats
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US8318239B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus for detecting and passivating defects in thin film solar cells
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
CN108693141A (zh) * 2018-01-25 2018-10-23 上海大学 激光与红外复合的无损检测设备及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694243A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Observing method for impurity in semiconductor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251080A1 (de) * 1972-10-18 1974-05-02 Max Planck Gesellschaft Michelson-interferometer
US4429047A (en) * 1981-08-28 1984-01-31 Rca Corporation Method for determining oxygen content in semiconductor material
US4590574A (en) * 1983-04-29 1986-05-20 International Business Machines Corp. Method for determining oxygen and carbon in silicon semiconductor wafer having rough surface
JPS6417031A (en) * 1987-07-10 1989-01-20 Olympus Optical Co Shutter driving device
JPH06117031A (ja) * 1992-10-06 1994-04-26 Toshiba Corp 住宅の構造材

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694243A (en) * 1979-12-28 1981-07-30 Fujitsu Ltd Observing method for impurity in semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9983489B2 (en) 2014-06-03 2018-05-29 Asml Netherlands B.V. Method for compensating for an exposure error, a device manufacturing method, a substrate table, a lithographic apparatus, a control system, a method for measuring reflectivity and a method for measuring a dose of EUV radiation

Also Published As

Publication number Publication date
EP0250707B1 (en) 1991-08-07
EP0250707A2 (en) 1988-01-07
JPH0449904B2 (enExample) 1992-08-12
DE3771945D1 (de) 1991-09-12
EP0250707A3 (en) 1988-08-03
US4862000A (en) 1989-08-29

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